JP2016122795A - 真空引き方法及び真空処理装置 - Google Patents
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Abstract
【解決手段】真空処理室を有する真空処理装置の真空引き方法であって、前記真空処理室と排気装置とを接続するバルブを開き、該排気装置により第1の所定時間該真空処理室内を真空引きする第1の工程と、前記第1の工程後に前記バルブを閉じ、第2の所定時間放置して真空処理室11内の昇圧を促す第2の工程と、を有し、前記真空処理室内の水分を凝固させることなく前記真空処理室内の圧力が6.7Pa〜13.3×102Paになるまで降圧する真空引き方法が提供される。
【選択図】図6
Description
まず、本発明の一実施形態にかかる真空処理装置10の全体構成の一例について、図1を参照しながら説明する。ここでは、真空処理装置10は、真空処理室11内でプラズマを生成し、プラズマの作用により半導体ウェハ(以下と「ウェハW」ともいう。)をエッチング処理等のプラズマ処理を行う装置である。
次に、水分の凝固について図2を参照して説明する。図2は、水分の蒸気圧曲線を示す図であり、横軸は温度を示し、縦軸は圧力を示す。曲線A及び横軸で囲まれる領域Gにおいて水分は気化し、曲線A及び直線Bで囲まれる領域Lにおいて水分は液化し、曲線A、直線B及び縦軸で囲まれる領域Sにおいて水分は凝固する。
次に、本実施形態にかかる真空引き方法について図3及び図4を参照して説明する。図3は、本実施形態にかかる真空引き処理の一例を示すフローチャートである。図4は、本実施形態にかかる真空引きによる真空処理室11内の圧力遷移の一例を示す。図4において横軸は真空引きを開始(時刻T0)してからの時間を示し、縦軸は真空処理室11内の圧力を示す。本実施形態にかかる真空引き方法は、真空処理装置10においてエッチング処理が行われた際に真空処理室11内に付着した反応生成物を取り除くために真空処理室11の壁面等をクリーニングした後に実行される。なお、本実施形態にかかる真空引き処理が開始される際、TMP40とドライポンプ41との間に設けられたバルブ42は閉じられている。
(水分の状態)
本実施形態にかかる真空引き方法を実行している間の真空処理室11内の水分の状態について図5を参照して説明する。図5の曲線C,Dは、本実施形態にかかる真空引き方法の場合の真空処理室11内の水分量(OH基の発行強度)を示す。図5の曲線A,Bは、連続的に真空引きする比較例の場合の真空処理室11内の水分量(OH基の発行強度)を示す。
11:真空処理室
12:載置台
13:排気路
14:排気プレート
16:APCバルブ
17:反応室
18:排気室
19:第1の高周波電源
21:静電電極板
22:静電チャック
23:直流電源
27:伝熱ガス供給孔
29:シャワーヘッド
31:第2の高周波電源
40:TMP
41:ドライポンプ
42,43:バルブ
50:制御部
Claims (5)
- 真空処理室を有する真空処理装置の真空引き方法であって、
前記真空処理室と排気装置とを接続するバルブを開き、該排気装置により第1の所定時間該真空処理室内を真空引きする第1の工程と、
前記第1の工程後に前記バルブを閉じ、第2の所定時間放置して真空処理室内の昇圧を促す第2の工程と、を有し、
前記真空処理室内の水分を凝固させることなく前記真空処理室内の圧力が6.7Pa〜13.3×102Pa(5Torr〜10Torr)になるまで降圧する、
真空引き方法。 - 前記第1の工程と前記第2の工程とを繰り返し実行する、
請求項1に記載の真空引き方法。 - 前記第1の工程と前記第2の工程との実行により、前記真空処理室内を一分間に3333Pa〜3359Pa(25.0Torr〜25.2Torr)降圧する、
請求項1又は2に記載の真空引き方法。 - 前記第1の工程と前記第2の工程との実行により、前記真空処理室内の水分を凝固させることなく前記真空処理室内の圧力が大気圧から6.7Pa〜13.3×102Pa(5Torr〜10Torr)になるまで降圧する、
請求項1〜3のいずれか一項に記載の真空引き方法。 - 真空処理室と制御部とを有する真空処理装置であって、
前記制御部は、
前記真空処理室と排気装置とを接続するバルブを開き、該排気装置に第1の所定時間該真空処理室内を真空引きさせ、
前記真空引き後に前記バルブを閉じ、第2の所定時間放置して真空処理室11内の昇圧を促し、
前記真空処理室内の水分を凝固させることなく前記真空処理室内の圧力が6.7Pa〜13.3×102Pa(5Torr〜10Torr)になるまで降圧するように制御する、
真空処理装置。
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JP2014263378A JP6408904B2 (ja) | 2014-12-25 | 2014-12-25 | 真空引き方法及び真空処理装置 |
US14/977,778 US9984907B2 (en) | 2014-12-25 | 2015-12-22 | Evacuation method and vacuum processing apparatus |
KR1020150185257A KR102364950B1 (ko) | 2014-12-25 | 2015-12-23 | 진공 배기 방법 및 진공 처리 장치 |
TW104143285A TWI676222B (zh) | 2014-12-25 | 2015-12-23 | 真空吸引方法及真空處理裝置 |
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JP7433164B2 (ja) | 2019-08-15 | 2024-02-19 | 東京エレクトロン株式会社 | 基板処理システム |
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CN108987235B (zh) * | 2018-07-12 | 2020-06-05 | 昆山龙腾光电股份有限公司 | 一种等离子体处理装置 |
JP7238461B2 (ja) * | 2019-02-25 | 2023-03-14 | 株式会社島津製作所 | バルブ制御装置および真空バルブ |
US11742188B2 (en) * | 2019-08-15 | 2023-08-29 | Tokyo Electron Limited | Substrate processing method, pressure control apparatus and substrate processing system |
CN113097095A (zh) * | 2019-12-23 | 2021-07-09 | 长鑫存储技术有限公司 | 半导体工艺的控制方法及其系统 |
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WO2020194434A1 (ja) * | 2019-03-25 | 2020-10-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
CN113508453A (zh) * | 2019-03-25 | 2021-10-15 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法及程序 |
JPWO2020194434A1 (ja) * | 2019-03-25 | 2021-11-18 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7138238B2 (ja) | 2019-03-25 | 2022-09-15 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
CN113508453B (zh) * | 2019-03-25 | 2024-02-02 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法及计算机可读的记录介质 |
JP7433164B2 (ja) | 2019-08-15 | 2024-02-19 | 東京エレクトロン株式会社 | 基板処理システム |
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JP6408904B2 (ja) | 2018-10-17 |
TW201635408A (zh) | 2016-10-01 |
KR20160078910A (ko) | 2016-07-05 |
US20160189988A1 (en) | 2016-06-30 |
US9984907B2 (en) | 2018-05-29 |
KR102364950B1 (ko) | 2022-02-17 |
TWI676222B (zh) | 2019-11-01 |
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