KR102327107B1 - Dividing apparatus and dividing method - Google Patents

Abstract

An object of the present invention is to satisfactorily divide a wafer and eliminate sagging of a tape without lowering cooling efficiency with a simple device configuration.
A dividing device (1) for dividing a wafer (W) supported on a ring frame (F) via a DAF tape (T) with a modified layer (55) as a starting point by extension of the DAF tape, A table 20 for holding a table 20, a frame holding means 30 for holding a ring frame around the wafer, a dividing box 10 for accommodating the table and the frame holding means, and supplying cold air into the dividing box into a cold atmosphere The cooling air supply means 15, the lifting means 36 for relatively approaching and separating the table and the frame holding means, and the DAF tape dangling around the wafer in a cold air atmosphere is heat-shrinked by far infrared rays to fix the gap between the chips. It was set as the structure provided with the contraction means 40.

Description

DIVIDING APPARATUS AND DIVIDING METHOD

The present invention relates to a dividing apparatus and a dividing method for dividing a wafer into individual chips.

Conventionally, it is known as a division|segmentation apparatus to divide|segment the wafer supported by the ring frame via the tape by extending the tape along the division|segmentation origin formed in the wafer (for example, refer patent document 1, 2). In these dividing apparatuses, a wafer is held on a dividing table and a ring frame is held on a ring-shaped table, and the wafer is pushed up relative to the ring frame. Thereby, the tape is expanded in the radial direction, and an external force is applied from the tape to the dividing origin of the wafer, and the wafer is divided into individual chips along the dividing origin.

[Patent Document 1] Japanese Patent Laid-Open No. 2016-004832 [Patent Document 2] Japanese Patent Laid-Open No. 2007-027250

However, even if the tape is expanded in a normal temperature atmosphere, only the tape is stretched leaving the wafer, and the wafer may not be divided satisfactorily. Therefore, there has been proposed a method of dividing a wafer by installing a cooling facility in the dividing device and expanding the tape in a cold air atmosphere. In addition, after the division of the wafer, in order to fix the gap between the chips, it is necessary to heat-shrink the tape sagging around the wafer caused by the expansion of the tape. This removes the sagging of the tape. However, when conveying the wafer after division|segmentation from a cooling facility, there existed a problem that the chip|tip side surface was damaged by the rubbing of a chip|tip, etc., or abrasion.

The present invention has been made in view of such a point, and it is an object of the present invention to provide a dividing device and a dividing method capable of properly dividing a wafer and eliminating sagging of the tape without reducing cooling efficiency with a simple device configuration. .

A division apparatus of one aspect of the present invention divides the wafer from the dividing starting point by expanding the tape of a work set integrated by adhering a wafer having a division starting point to the adhesive tape by blocking the opening of the ring frame as a starting point An apparatus, comprising: a table having a frame holding means for holding the ring frame; a table having a holding surface for holding a wafer via the tape of a work set held by the frame holding means; and a partition for receiving the frame holding means and the table an opening/closing means for opening and closing a chamber and a part of the divided chamber to allow loading and unloading of work sets into and out of the divided chamber; Elevating means for approaching and separating the table and the frame holding means in a direction orthogonal to the holding surface relatively in the division chamber, and the outer periphery of the wafer adhered to the tape extended in the division chamber and the ring and shrinking means for fixing the gap between adjacent chips by irradiating far-infrared rays to contract the tape between the inner periphery of the frame, and separating the table from the frame holding means in the division chamber in a cold atmosphere to separate the tape. Expanded to divide the wafer, the holding surface holds the expanded tape to bring the table and the frame holding means closer, and irradiating far-infrared rays to the tape stretched between the outer periphery of the wafer and the inner periphery of the ring frame to contract to fix the spacing between adjacent chips.

According to this configuration, the tape is expanded while the inside of the division chamber is in a cold atmosphere, and the wafer is divided into individual chips with the division starting point as a starting point. At this time, since the tape is cooled together with the wafer, it becomes difficult to elongate the tape at the adhesion portion of the wafer, and the external force at the time of expansion of the tape is directly applied to the wafer, which makes it easy to crack. In addition, after the division of the wafer, the sagging of the tape around the wafer is thermally contracted by irradiation of far-infrared rays in the division chamber. Since the tape is partially heated by the far-infrared rays, sagging of the tape can be satisfactorily removed in a cooling atmosphere while suppressing the temperature rise in the division chamber. In addition, since the division of the wafer and the thermal shrinkage of the tape are performed in the division chamber, the chips are conveyed in a state where the interval between the divisions is fixed, so that deterioration in quality due to the chips rubbing against each other is prevented.

A dividing method of one aspect of the present invention is a method of dividing a wafer using the above-described dividing device, comprising: a holding step of loading a work set into the dividing chamber and holding the work set by the frame holding means; a cooling step of cooling the work set by supplying and a shrinking step of shrinking the tape by irradiating far-infrared rays to the tape that is stretched between the outer periphery of the wafer and the inner periphery of the ring frame by the holding surface holding the tape in the division chamber.

According to the present invention, by dividing the wafer in a cold atmosphere and thermally shrinking the tape by far-infrared rays, a decrease in cooling efficiency can be suppressed with a simple device configuration, and deterioration in quality due to rubbing of the wafer after division, etc. can be prevented. have.

BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective view of the division|segmentation apparatus of this embodiment.
It is explanatory drawing of the division|segmentation operation|movement and heat shrink operation|movement of the division|segmentation apparatus of a comparative example.
It is explanatory drawing of the division|segmentation operation|movement by the division|segmentation apparatus of this embodiment.
It is a side schematic diagram of the division|segmentation apparatus of a modified example.

Hereinafter, the division|segmentation apparatus of this embodiment is demonstrated with reference to an accompanying drawing. BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective view of the division|segmentation apparatus of this embodiment. In addition, the division|segmentation apparatus is not limited to the structure shown in FIG. 1, It is possible to change suitably.

As shown in FIG. 1 , the dividing device 1 applies a wafer W supported by a Dai Attach Film (DAF) tape T to a ring frame F, and the DAF tape T in a cold atmosphere. It is configured to be divided into individual chips C (see Fig. 3B) by expansion. In addition, the dividing device 1 thermally shrinks (heats) the sagging of the DAF tape T that occurs between the outer periphery of the wafer W and the inner periphery of the ring frame F when the extension of the DAF tape T is released. It is configured to be removed by shrink). In this way, only the portion where the DAF tape T is stretched is thermally shrunk, and the interval between the chips C is maintained so that the chips C after division of the wafer W do not come into contact with each other and are damaged.

A grid-like division line L is formed on the surface of the wafer W, and various devices (not shown) are formed in each area partitioned by the division line L. On the other hand, the wafer W may be a semiconductor wafer in which devices such as IC and LSI are formed on a semiconductor substrate such as silicon or gallium arsenide, or an optical device in which optical devices such as LED are formed on a ceramic, glass, or sapphire-based inorganic material substrate. A wafer may be sufficient. The wafer W is adhered to the DAF tape T pasted on the ring frame F, and the work set WS in which the wafer W, the ring frame F, and the DAF tape T are integrated is divided into the dividing device 1 ) is imported into

The ring frame F of the work set WS has an opening blocked by a DAF tape T having heat shrinkability, and a wafer W is adhered to the DAF tape T inside the opening. A modified layer 55 (refer to FIG. 3A ) is formed inside the wafer W as a division starting point along the division scheduled line L. As shown in FIG. On the other hand, the modified layer 55 refers to a region in which the density, refractive index, mechanical strength, and other physical properties of the inside of the wafer W are different from those of the surroundings by laser irradiation, and the strength is lowered than the surrounding area. The modified layer 55 may be, for example, a melt processing region, a crack region, a dielectric breakdown region, and a refractive index change region, and a region in which these regions are mixed.

In addition, although the modified layer 55 (refer FIG. 3A) formed in the inside of the wafer W is illustrated as a division|segmentation starting point in the following description, it is not limited to this structure. The division starting point may be a starting point at the time of division of the wafer W, and may be composed of, for example, a laser processing groove, a cutting groove, and a scribe line. In addition, the DAF tape T may be one in which the DAF 56 is laminated on the surface and has elasticity and heat shrinkability, and the material is not particularly limited. The tape base material of the DAF tape T is preferably formed of, for example, PO (Polyolefin) or PVC (Polyvinyl Chloride) that is easily contracted by far-infrared rays.

In the division apparatus 1, a division box 10 composed of an upper box 11 and a lower box 12 is installed, and a division chamber 13 for dividing the wafer W is provided in the division box 10. is formed The upper box 11 and the lower box 12 are connected through the opening/closing means 14, and the upper box 11 and the lower box 12 are opened by the opening/closing means 14, whereby the work set WS is loaded. and export is possible. The opening/closing means 14 is constituted by an air cylinder, and the upper box 11 is connected to a cylinder rod protruding from the cylinder provided in the lower box 12 . The upper box 11 is provided with cold air supply means 15 which supplies cold air into the divided chamber 13 and makes the inside of the divided chamber 13 into a cold air atmosphere.

In the division chamber 13 (lower box 12), a table 20 capable of sucking and holding the wafer W via the DAF tape T of the work set WS is disposed, and around the table 20 A frame holding means 30 for holding the ring frame F of the work set WS is disposed. The table 20 is supported by a plurality of struts 21 , and a porous porous plate 22 is disposed on the upper surface of the table 20 . A holding surface 23 for sucking and holding the wafer W is formed on the upper surface of the table 20 by the porous porous plate 22 . The holding surface 23 is connected to a suction source 26 (refer to FIG. 3A ) through a flow path in the table 20 , and the wafer W is sucked and held by the negative pressure generated on the holding surface 23 .

In addition, an on-off valve 24 (refer to FIG. 3A ) is provided in the flow path extending from the holding surface 23 to the suction source 26 , and the holding surface 23 for the wafer W is provided by the on-off valve 24 . Suction hold and suction release are switched. On the outer peripheral edge of the table 20, the some roller part 25 is rotatably provided over the whole perimeter. The plurality of roller units 25 are in rolling contact with the DAF tape T around the wafer W from below in a state where the wafer W is held by the holding surface 23 . By rolling contact with the DAF tape T by the some roller part 25, the friction of the DAF tape T which generate|occur|produces at the outer peripheral edge of the table 20 at the time of the expansion of the DAF tape T is suppressed.

The frame holding means 30 sandwiches the ring frame F on the placement table 31 from above with the cover plate 32 , and holds the ring frame F on the placement table 31 . are doing In the center of the arrangement table 31 and the cover plate 32 , circular openings 33 and 34 having a larger diameter than the table 20 are respectively formed. When the cover plate 32 is covered on the placement table 31 , the ring frame F is held by the cover plate 32 and the placement table 31 , and the placement table 31 and the cover plate 32 are Part of the wafer W and the DAF tape T are exposed from the circular openings 33 and 34 to the outside.

The frame holding means 30 is a state in which the cover plate 32 is covered on the ring frame F on the placement table 31, for example, the cover plate 32 is secured to the placement table 31 by a clamp unit (not shown). is fixed on The frame holding means 30 is an elevating means 36 for separating and approaching the table 20 and the frame holding means 30 in a direction orthogonal to the holding surface 23 relatively in the dividing chamber 13 . is supported on The raising/lowering means 36 is comprised by the four electric cylinders which support the four corners of the placement table 31. As shown in FIG. By controlling the amount of protrusion of the cylinder rod 37 of the lifting means 36 , the distance between the wafer W on the table 20 and the frame holding means 30 is adjusted.

In the division chamber 13 (upper box 11), a shrinkage means 40 for shrinking the sagging generated in the DAF tape T is provided. The shrinking means 40 is provided on the central axis of the wafer W, and a pair of irradiation parts 42 are disposed at both ends of the swing arm 41 so as to face each other with the center of the wafer W interposed therebetween. . The irradiation section 42 is configured to spot-irradiate far-infrared rays having a peak waveform of 3 µm to 25 µm, which is difficult to be absorbed by a metal material, for example. Thereby, heating of each part of the apparatus is suppressed, and the sagging of the DAF tape T between the outer periphery of the wafer W and the inner periphery of the ring frame F is partially heated and thermally shrunk.

Further, in the pivot arm 41 of the retracting means 40 , a vertical operation unit 43 for moving the pair of irradiation units 42 up and down, and a pair of irradiation units 42 are provided around the central axis of the wafer W. A rotation motor 44 for rotating the furnace is provided. The vertical operation unit 43 adjusts the height of the pair of irradiation units 42 with respect to the DAF tape T in accordance with the raising/lowering operation of the frame holding means 30 . The rotation motor 44 turns the pair of irradiation parts 42 so that the sagging of the DAF tape T around the wafer W is heated over the entire circumference. The DAF tape T around the wafer W is well heated by properly positioning the pair of irradiation parts 42 with respect to the DAF tape T by the up-and-down operation part 43 and the rotation motor 44 .

Moreover, the division|segmentation apparatus 1 is provided with the control means 50 which collectively controls each part of the apparatus. The control means 50 is constituted by a processor, a memory, or the like that executes various processes. The memory is composed of one or a plurality of storage media such as ROM (Read Only Memory) and RAM (Random Access Memory) depending on the purpose. The table 20 and the frame holding means 30 are moved relative to each other by the control means 50 to control the expansion operation of the DAF tape T, and the DAF by a pair of irradiation parts 42 of the contracting means 40 The sagging of the tape T is removed, and the contraction operation of the DAF tape T is controlled.

In such a dividing device 1 , the frame holding means 30 is lowered while holding the ring frame F in the cold air atmosphere in the dividing chamber 13 , so that the cover plate 32 and the arrangement table 31 are separated. The table 20 protrudes from the circular openings 33 , 34 . As the table 20 is pushed up relative to the frame holding means 30, the DAF tape T is expanded in the diametric direction so that the wafer W is divided into individual chips C (see Fig. 3B). Further, when the frame holding means 30 is raised to release the extension of the DAF tape T, the tension of the DAF tape T is loosened. At this time, the DAF tape T is heated by the far-infrared rays from the irradiation part 42 so that the DAF tape T around the wafer W does not sag so that it is thermally contracted.

However, as shown in FIG. 2A , if the wafer W is to be divided in a room temperature atmosphere, the DAF 56 is stretched when the DAF tape T is expanded, so that the wafer W cannot be divided satisfactorily. That is, when the DAF tape T is expanded, the DAF 56 is stretched together with the tape base material while leaving the wafer W, so that the external force due to the expansion of the DAF tape T is not transmitted to the wafer W. . In addition, even if it is a tape other than the DAF tape T, since the wafer W is adhered to the adhesive glue on the tape base material, only the adhesive glue is stretched together with the tape base material leaving the wafer W, so the wafer W is not well partitioned. In particular, since the DAF tape or a tape other than the DAF tape between the outer periphery of the wafer and the inner periphery of the ring frame expands in the ambient temperature atmosphere, the expansion of the tape does not contribute to the division of the wafer.

For this reason, as shown in Fig. 2B, a configuration in which the wafer W and the DAF 56 are integrally divided while suppressing the expansion of the DAF 56 in a cold atmosphere is considered. Due to the expansion of the DAF tape T in the cold air atmosphere, the DAF tape T is more difficult to extend at the location where the wafer W is adhered than at the location where the wafer W is not adhered. As a result, when the DAF tape T is expanded, the DAF 56 is difficult to extend at the location where the wafer W is adhered, so that the wafer W and the DAF 56 are integrally divided. Similarly, in other tapes, since the adhesive paste of the tape is not softened by cooling, the wafer W is satisfactorily divided by the expansion of the tape.

However, in a cold air atmosphere, a general heater such as blowing hot air at the time of thermal contraction of the DAF tape T cannot be used. For this reason, he is trying to install the heating installation which heat-shrinks the sagging of the DAF tape T in the area|region different from the cooling installation which normally creates a cool air atmosphere in consideration of cooling efficiency. However, since the wafer W is conveyed from the cooling facility to the heating facility without removing the sagging of the DAF tape T, the slack of the DAF tape T rubs against each other, and the chips C rub against each other. There were scratches and bruises on the side of the In addition, there is a problem that the device configuration becomes complicated and the device becomes large.

Therefore, in the present embodiment, the wafer W is divided together with the DAF 56 by expanding the DAF tape T in a cold air atmosphere, and the DAF tape T is stretched after division of the wafer W in the same room. The far-infrared rays are spot-irradiated from the irradiator 42 to the . Since far-infrared rays themselves do not have heat and do not warm the air, only the irradiation location of the DAF tape T is heated without raising the temperature of the room. Thereby, the wafer W is satisfactorily divided in a cold air atmosphere, the slack of the DAF tape T is thermally shrunk while maintaining a cold air atmosphere, and while suppressing a decrease in cooling efficiency, the wafer W after division is caused by rubbing, etc. quality deterioration can be prevented.

Hereinafter, with reference to FIG. 3, the division|segmentation operation|movement by the division|segmentation apparatus of this embodiment is demonstrated. It is explanatory drawing of the division|segmentation operation|movement by the division|segmentation apparatus of this embodiment. Fig. 3A shows an example of a holding process and a cooling process, Fig. 3B shows an example of a dividing process, and Fig. 3C shows an example of a tape shrinking process.

As shown in FIG. 3A , a holding process is first performed. In the holding step, the work set WS is loaded into the division chamber 13 of the division box 10 , the wafer W is placed on the table 20 via the DAF tape T, and the wafer W A peripheral ring frame (F) is held by the frame holding means (30). In addition, when the work set WS is loaded into the division box 10 , the division box 10 is closed by the opening/closing means 14 , and the division chamber 13 is hermetically sealed so that outside air does not enter. At this time, the on-off valve 24 continuous to the table 20 is closed, and the suction force to the table 20 from the suction source 26 is interrupted|blocked.

Next, a cooling process is implemented after a holding process. In a cooling process, cold air is supplied into the division chamber 13 from the supply port of the cold air supply means 15 of the division box 10, the work set WS is exposed to the cold air in the division chamber 13, and it is cooled. At this time, since the wall surface of the division box 10 is formed with the heat insulating material etc., it is possible to cool the inside of the division chamber 13 favorably. Thereby, the wafer W and the DAF tape T are hardened, and the DAF tape T becomes more difficult to elongate at the location where the wafer W is adhered than at the location where the wafer W is not adhered. That is, at the bonding location of the wafer W, the wafer W and the DAF 56 are integrated.

As shown in FIG. 3B , the division process is performed after the cooling process. In a division|segmentation process, the frame holding means 30 descend|falls in cold air atmosphere, and the table 20 and the frame holding means 30 are spaced apart. As a result, the DAF tape T is expanded in the radial direction, and an external force is applied to the modified layer 55 (see FIG. 3A ) whose strength has been lowered, so that the wafer W is DAF with the modified layer 55 as a starting point. It is divided into individual chips (C) together with (56). At this time, since the DAF 56 is integrated with the wafer W by the cool air atmosphere in the division chamber 13, the DAF 56 is not stretched due to the expansion of the DAF tape T, and the wafer ( The DAF 56 is divided along with W).

As shown in FIG. 3C , a shrinking process is performed after the dividing process. In the shrinking process, when the wafer W is divided into individual chips C, the on-off valve 24 is opened to generate a suction force on the table 20 . In a state in which the chip C is sucked and held by the table 20 through the DAF tape T, the frame holding means 30 is raised so that the table 20 and the frame holding means 30 are approached. For this reason, on the table 20, the DAF tape T is sucked and held in a state where the chips C are spaced apart, while between the outer periphery of the wafer W and the inner periphery of the ring frame F, the DAF tape T. The tension of the body is loosened and sagging occurs.

At this time, the shrinking means 40 is positioned above the wafer W, and the pair of irradiation parts 42 is rotated by the rotation motor 44 (see FIG. 1 ) to heat shrinkage of the DAF tape T. This is initiated. In accordance with the movement of the frame holding means 30 , while the height of the irradiation unit 42 is adjusted by the vertical operation unit 43 (see FIG. 1 ), the outer periphery and the ring of the wafer W from the pair of irradiation units 42 . Far-infrared rays are irradiated to the DAF tape T that hangs between the inner periphery of the frame F. Since only the DAF tape T around the wafer W is thermally shrunk, even if the suction holding of the table 20 is released, the space between the adjacent chips C is maintained and fixed.

In addition, since only the DAF tape T is partially heated without warming the surrounding air by far-infrared rays having no heat, it is possible to suppress the temperature rise in the division chamber 13 . In this way, the division of the wafer W and the thermal contraction of the DAF tape T are continuously performed in the state in which the inside of the division box 10 is maintained in a cold atmosphere. Accordingly, the device configuration can be simplified, and quality deterioration due to the chip C rubbing after division of the wafer W is prevented. In addition, although it was set as the structure which supplies cold air to the division chamber 13 in a cooling process, you may make it continue supplying cold air to the division chamber 13 also in a division process and a maintenance process. Thereby, the fixation of the chip|tip spaced apart can be made more reliably.

As described above, in the dividing apparatus 1 of the present embodiment, the DAF tape T is expanded in a state in which the inside of the dividing chamber 13 is made into a cold air atmosphere, and the wafer W is divided into individual parts with the dividing starting point as a starting point. It is divided into chips (C). At this time, since the DAF tape T is cooled together with the wafer W, it becomes difficult for the DAF tape T to be stretched at the adhesion portion of the wafer, and the external force at the time of expansion of the DAF tape T is directly applied to the wafer ( W), and it becomes easy to crack. Further, after the division of the wafer W, the sagging of the DAF tape T around the wafer W is thermally contracted by irradiation of far-infrared rays in the division chamber 13 . Since the DAF tape T is partially heated by the far-infrared rays, the drooping of the DAF tape T can be favorably removed in a cooling atmosphere while suppressing the temperature rise of the division chamber 13 . In addition, since the division of the wafer W and the thermal contraction of the DAF tape T are performed in the division chamber 13, the chips C after division are conveyed in a state where the interval between them is fixed. Quality deterioration due to rubbing or the like is prevented.

In addition, in this embodiment, although it was set as the structure in which the raising/lowering means and the retracting means are accommodated in the division chamber, it is not limited to this structure. The raising/lowering means should just be a structure which separates and carries out a frame holding means and a table in a division chamber, and the drive part of the raising/lowering means may be provided outside the division chamber. In addition, what is necessary is just a structure which irradiates far-infrared rays to a tape in a division chamber inside a division means, and the rotation motor of a contraction means may be provided outside the division chamber. As shown in Fig. 4, the driving part 62 of the lifting means 61 and the rotary motor 65 of the retracting means 64 are installed outside the partition chamber 67, so that the partition chamber 67 is driven by the drive train. ) The inside does not become warm, and the division chamber 67 can be made small, and the cooling time by the cold air supply means 68 can be shortened.

In addition, in this embodiment, although it was set as the structure in which a raising/lowering means raises/lowers a frame holding means with respect to a table, it is not limited to this structure. The lifting means may be configured to relatively approach and separate the table and the frame holding means, and for example, may be configured to raise and lower the table with respect to the frame holding means. In addition, the lifting means is not limited to an electric cylinder, You may be comprised by other actuators.

In addition, in this embodiment, although the DAF tape in which the DAF was laminated|stacked on the tape base material as a tape was illustrated and demonstrated, it is not limited to this structure. A tape should just be a tape in which the adhesive layer was formed on the tape base material which heat-shrinks.

In addition, in this embodiment, although it was set as the structure which forms a division|segmentation chamber with an upper box and a lower box, it is not limited to this structure. The division chamber may be formed in any way as long as the frame holding means and the table can be accommodated.

In addition, in this embodiment, although it was set as the structure whose opening/closing means is an air cylinder, it is not limited to this structure. The opening/closing means should just be a structure which opens and closes a part of a division chamber, and enables carrying in and carrying out of a work set in a division chamber.

In addition, in this embodiment, although it was set as the structure in which the cold air supply means is provided in the upper part of a division box, it is not limited to this structure. The cold air supply means should just be a structure which supplies cold air in a division chamber and makes the inside of a division chamber into a cold air atmosphere, and the installation position with respect to a division box, and the cooling method in a division chamber are not specifically limited.

Moreover, although the embodiment of this invention has been described, as another embodiment of this invention, what combined the said embodiment and a modified example in whole or part may be sufficient.

In addition, the embodiment of the present invention is not limited to the above-described embodiment and modified examples, and various changes, substitutions and modifications may be made without departing from the spirit of the technical idea of the present invention. Furthermore, if the technical idea of the present invention can be realized in other ways due to technological advances or other derived technologies, it may be implemented using the method. Accordingly, the claims cover all embodiments that can be included within the scope of the technical idea of the present invention.

In addition, in this embodiment, although the structure which applied this invention to a division|segmentation apparatus was demonstrated, it is also applicable to another expand apparatus which expands a tape suitably.

As described above, the present invention has the effect that the wafer can be divided satisfactorily and tape sagging can be removed without lowering the cooling efficiency with a simple device configuration. It is useful for a dividing device and a dividing method.

1: dividing device 10: dividing box
13: dividing chamber 14: opening and closing means
15: cold air supply means 20: table
23: holding surface 30: frame holding means
36: lifting means 40: retracting means
55: modified layer (dividing origin) 56: DAF
C: Chip L: Line to be split
F: Ring frame T: DAF tape
W: Wafer WS: Workset

Claims (2)

A dividing device for dividing the wafer using the dividing starting point by expanding the tape of a work set integrated by adhering a wafer having a dividing starting point to the adhesive tape by blocking the opening of the ring frame,
frame holding means for holding the ring frame;
a table having a holding surface for holding a wafer through said tape of a set of works held by said frame holding means;
a partition chamber for accommodating the frame holding means and the table;
a division box comprising two boxes forming the division chamber;
an opening/closing means for opening and closing a part of the division chamber to open and close the division box to enable loading and unloading of a work set into the division chamber;
cold air supply means for supplying cold air into the divided chamber closing the division box to create a cold air atmosphere in the division chamber;
elevating means for approaching and separating the table and the frame holding means relatively in a direction orthogonal to the holding surface in the dividing chamber;
and contracting means for fixing the gap between adjacent chips by irradiating far-infrared rays to the tape between the outer periphery of the wafer adhered to the expanded tape in the division chamber and the inner periphery of the ring frame, and shrinking it;
In the dividing chamber in the cold atmosphere with the dividing box closed, the table and the frame holding means are spaced apart to expand the tape to divide the wafer, and the holding surface holds the expanded tape to hold the table and the frame. A dividing device, characterized in that the holding means is brought close, and the distance between adjacent chips is fixed by irradiating far-infrared rays to the tape stretched between the outer periphery of the wafer and the inner periphery of the ring frame to shrink it. A method of dividing a wafer using the dividing device according to claim 1, comprising:
a holding step of carrying a work set into the division chamber and holding the work set with the frame holding means;
a cooling process of cooling the work set by supplying cold air into the divided chamber;
a dividing step of dividing the wafer by expanding the tape by moving the table and the frame holding means apart after the cooling step;
After the dividing process, the holding surface holds the tape in the dividing chamber and irradiating far-infrared rays to the tape stretched between the outer periphery of the wafer and the inner periphery of the ring frame to shrink the tape. Way.

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