TW201828347A - Dicing apparatus and dicing method capable of well dicing wafer and preventing tape slack without lowering cooling efficiency - Google Patents

Abstract

The subject of the present invention is to use a simple apparatus configuration to well dice a wafer and prevent the tape slack without lowering the cooling efficiency. The solution is to provide a dicing apparatus which may dice a wafer supported by a ring-like frame through a die attach film tape (DAF tape) by means of expansion of the DAF tape to have a modified layer as a starting point. The dicing apparatus is formed as a structure comprising: a working stage for holding a wafer via the DAF tape; a frame holding mechanism for holding the ring-like frame around the wafer; a dicing box for receiving the working stage and the frame holding mechanism; a cooling air supply mechanism for supplying cooling air into the dicing box to set up a cooling atmosphere; a lifting mechanism for enabling the working stage and the frame holding mechanism approaching to each other or separating from each other; and a shrinking mechanism for thermally shrinking the slacked DAF tape around the wafer by far infrared ray in the cooling atmosphere, so as to fix the gap between dies.

Description

Segmentation device and segmentation method

FIELD OF THE INVENTION The present invention relates to a dividing device and a dividing method for dividing a wafer into individual wafers.

BACKGROUND OF THE INVENTION Conventionally, as a dividing device, a device in which a wafer supported on an annular frame by a tape is divided along a dividing starting point formed on a wafer by an expansion tape is known (for example, a reference patent) Literature 1, 2). In these dividing devices, the wafer is held on the dividing table, and the annular frame is held on the annular table, and the wafer is relatively pushed up relative to the annular frame. Thereby, the tape is expanded in the radial direction, and an external force is applied from the tape to the starting point of the division of the wafer to divide the wafer into individual wafers along the division starting point. Prior Technical Literature Patent Literature

Patent Document 1: Japanese Patent Laid-Open No. Hei. No. 2016-004832. Patent Document 2: Japanese Patent Laid-Open No. 2007-027250

SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, even if the tape is expanded in a normal temperature ambient gas, there is a case where the wafer is left and only the tape is stretched, and the wafer is not well divided. Thus, a solution has been proposed in which a cooling device is provided in the dividing device to expand the tape in a cold air atmosphere to divide the wafer. Further, in order to fix the interval between the wafers after the wafer is divided, it is necessary to shrink the heat of the tape around the wafer due to the expansion of the tape, but in consideration of the decrease in the cooling efficiency, it is usually separated from the cooling device. Remove the slack of the tape in other units. However, when the divided wafer is transferred from the cooling device, there is a problem that scratches or defects occur on the side surface of the wafer due to rubbing of the wafers or the like.

The present invention has been made in view of the above problems, and an object of the invention is to provide a dividing device and a dividing method which can be configured by a simple device without deteriorating cooling efficiency. The wafer is well segmented and the slack of the tape is removed. Means to solve the problem

A dividing device according to an aspect of the present invention is characterized in that a tape of a workpiece group in which a wafer having a starting point of a split has been formed is attached to a tape, and the tape is divided by the starting point of the dividing end, wherein the dividing film The tape is attached by clogging the opening of the annular frame, and the dividing device is characterized by: a frame holding mechanism for holding the annular frame; and a table having a holding surface which is held by the frame holding mechanism The tape of the workpiece set holds the wafer; the dividing chamber accommodates the frame holding mechanism and the table; and the opening and closing mechanism opens and closes a part of the dividing chamber to carry in and carry out the workpiece group in the divided chamber; the cold air supply mechanism Cooling air is supplied to the divided chamber to set the divided indoor air-conditioning atmosphere; and the lifting mechanism is configured to relatively close and move the table and the frame holding mechanism in a direction orthogonal to the holding surface in the divided chamber. And a shrinking mechanism to the tape between the outer periphery of the wafer attached to the tape that has been expanded in the dividing chamber and the inner circumference of the annular frame Irradiating the far infrared rays to shrink them to fix the interval between adjacent wafers, and in the divided chamber of the cold air atmosphere, the table is moved away from the frame holding mechanism to expand the tape to divide the wafer, and the The holding surface holds the expanded tape so that the table is close to the frame holding mechanism, and the relaxed tape between the outer circumference of the wafer and the inner circumference of the annular frame is irradiated with far infrared rays to make Shrink, while fixing the spacing of adjacent wafers.

According to this configuration, the tape can be expanded in a state in which the divided chamber is a cold air atmosphere, and the wafer can be divided into individual wafers starting from the division starting point. At this time, since the tape and the wafer are cooled together, the tape becomes difficult to elongate at the attachment position of the wafer, and the external force when the tape is expanded is directly applied to the wafer, and the splitting is facilitated. Further, after the wafer is divided, the relaxation of the tape around the wafer can be thermally contracted by irradiation of far infrared rays in the divided chamber. Since the tape is partially heated by far infrared rays, it is possible to satisfactorily remove the slack of the tape in the cooling atmosphere while suppressing the temperature rise in the divided chamber. In addition, since the division of the wafer and the heat shrinkage of the tape are performed in the divided chamber, the interval between the divided wafers can be fixed, and the quality caused by the collision of the wafers can be prevented. reduce.

A segmentation method according to an aspect of the present invention is a wafer dividing method using the above-described dividing device, the dividing method comprising: a holding step of loading the workpiece group into the dividing chamber, and holding the workpiece by the frame holding mechanism a cooling step of supplying cold air to the divided chamber to cool the workpiece set; a dividing step of, after the cooling step, moving the table and the frame holding mechanism in a direction away from each other, and expanding the tape to divide the crystal a circle; and a shrinking step, after the dividing step, holding the tape in the dividing chamber with the holding surface, and irradiating the relaxed tape between the outer circumference of the wafer and the inner circumference of the annular frame with far infrared rays The tape shrinks. Effect of the invention

According to the present invention, the wafer can be divided in the cold air atmosphere and the tape can be thermally contracted by the far infrared ray, whereby the reduction of the cooling efficiency can be suppressed by the simple device configuration, and the rubbing of the wafer after the division can be prevented. The quality caused by bumps, etc. is reduced.

Mode for Carrying Out the Invention Hereinafter, the dividing device of the present embodiment will be described with reference to the additional drawings. Fig. 1 is a perspective view of a dividing device of the embodiment. In addition, the division device is not limited to the configuration described in FIG. 1 and can be appropriately changed.

As shown in FIG. 1, the dividing device 1 is configured to transmit a wafer W supported on a ring frame F through a Dai-A film (DAF) tape T, and a DAF tape T in a cold air atmosphere. The expansion is divided into individual wafers C (refer to FIG. 3B). Further, the dividing device 1 is configured to remove the DAF tape T generated between the outer periphery of the wafer W and the inner circumference of the annular frame F when the expansion of the DAF tape T is released by heat shrinkage (Heat Shrink). relaxation. In this manner, only the position where the DAF tape T is stretched and relaxed is thermally contracted, and the interval between the wafers C can be maintained so that the divided wafers C of the wafer W are not damaged by contact with each other.

A lattice-shaped dividing line L is provided on the surface of the wafer W, and various elements (not shown) are formed in each of the regions defined by the dividing line L. In addition, the wafer W may be a semiconductor wafer in which an element such as an IC or an LSI is formed on a semiconductor substrate such as germanium or gallium arsenide, or an LED may be formed on a ceramic, glass, or sapphire-based inorganic material substrate. Optical element wafer of the optical element. The wafer W is attached to the DAF tape T attached to the annular frame F, and the workpiece group WS in which the wafer W, the annular frame F, and the DAF tape T are integrated is carried into the dividing device 1.

The annular frame F of the workpiece group WS is closed by the DAF tape T having heat shrinkability, and the wafer W is attached to the DAF tape T on the inner side of the opening. Inside the wafer W, a reforming layer 55 (see FIG. 3A) is formed as a starting point of division along the dividing line L. Furthermore, the modified layer 55 refers to a state in which the density, the refractive index, the mechanical strength, and other physical properties of the wafer W become different from the surroundings by the irradiation of the laser, and the intensity is lower than that of the surroundings. region. The reforming layer 55 may be, for example, a molten processed region, a crack region, an insulating fracture region, or a refractive index change region, or may be a region in which these regions are mixed.

In the following description, the modified layer 55 (see FIG. 3A) formed inside the wafer W is exemplified as the starting point of the division, but the configuration is not limited thereto. The starting point of the division may be a starting point at the time of division of the wafer W, and may be configured by, for example, a laser processing groove, a cutting groove, or a scribe line. In addition, the DAF tape T is not particularly limited as long as it has a DAF 56 surface layer and is stretchable and has heat shrinkability. The tape substrate of the DAF tape T is preferably formed of, for example, PO (Polyolefin) or PVC (Polyvinyl Chloride) which is easily contracted by far infrared rays.

The dividing device 1 is provided with a dividing box 10 composed of an upper tank 11 and a lower tank 12, and a dividing chamber 13 for dividing the wafer W is formed in the dividing box 10. The upper case 11 and the lower case 12 are connected by the opening and closing mechanism 14, and the upper case 11 and the lower case 12 can be opened by the opening and closing mechanism 14, so that the workpiece group WS can be carried in and out. The opening and closing mechanism 14 is constituted by a cylinder, and connects the upper case 11 to a cylinder rod that protrudes from a cylinder provided in the lower case 12. The upper tank 11 is provided with a cold air supply mechanism 15 that supplies cold air to the inside of the divided chamber 13 to form the inside of the divided chamber 13 as a cold air atmosphere.

A table 20 is disposed in the division chamber 13 (the lower case 12). The table 20 can suck and hold the wafer W via the DAF tape T of the workpiece group WS, and a frame holding mechanism 30 is disposed around the table 20. The frame holding mechanism 30 is an annular frame F for holding the workpiece group WS. The table 20 is supported by a plurality of column portions 21, and a porous perforated plate 22 is disposed on the upper surface of the table 20. By the porous perforated plate 22, a holding surface 23 for sucking and holding the wafer W is formed on the upper surface of the table 20. The holding surface 23 is connected to the suction source 26 (see FIG. 3A) through a flow path in the table 20, and sucks and holds the wafer W by the negative pressure generated by the holding surface 23.

Further, an on-off valve 24 (see FIG. 3A) is provided on the flow path from the holding surface 23 to the suction source 26, and the suction and holding of the wafer W by the holding surface 23 and the suction release can be switched by the on-off valve 24. At the outer peripheral edge of the table 20, a plurality of roller portions 25 are rotatably provided covering the entire circumference. The plurality of roller portions 25 can rotationally contact the DAF tape T around the wafer W from the lower side while the wafer W is held on the holding surface 23. By the rotational contact of the plurality of roller portions 25 with the DAF tape T, the friction of the DAF tape T generated at the outer peripheral edge of the table 20 at the time of expansion of the DAF tape T can be suppressed.

The frame holding mechanism 30 is formed by sandwiching the annular frame F on the mounting table 31 from above by the cover plate 32 to hold the annular frame F on the mounting table 31. In the center of the mounting table 31 and the cover 32, circular openings 33, 34 having a larger diameter than the table 20 are formed. When the cover 32 has been placed on the mounting table 31, the annular frame F is held by the cover 32 and the mounting table 31, and a part of the wafer W and the DAF tape T are placed from the mounting work. The circular openings 33, 34 of the table 31 and the cover 32 are exposed to the outside.

The frame holding mechanism 30 is configured such that the cover 32 is fixed to the mounting table 31 by a clamp portion (not shown) in a state where the cover 32 is placed on the annular frame F on the mounting table 31. . The frame holding mechanism 30 is supported by a lifting mechanism 36 that relatively moves and approaches the table 20 and the frame holding mechanism 30 in a direction orthogonal to the holding surface 23 in the dividing chamber 13. The elevating mechanism 36 is composed of four electric cylinders that support the four corners of the mounting table 31. By controlling the amount of protrusion of the cylinder rod 37 of the elevating mechanism 36, the distance between the wafer W on the table 20 and the frame holding mechanism 30 can be adjusted.

A contraction mechanism 40 is provided in the division chamber 13 (upper box 11) for relaxing and contracting the DAF tape T. The contraction mechanism 40 is disposed on the central axis of the wafer W, and a pair of irradiation portions 42 are disposed at both ends of the winding arm 41 so as to face each other with the center of the wafer W interposed therebetween. The illuminating unit 42 is configured to perform, for example, spot irradiation of far infrared rays, which is a far-infrared ray having a peak waveform of 3 μm to 25 μm which is hard to be absorbed by the metal material. Thereby, the heating of each part of the apparatus can be suppressed, and the slack of the DAF tape T between the outer circumference of the wafer W and the inner circumference of the annular frame F can be partially heated to perform heat shrinkage.

Further, the winding arm 41 of the contraction mechanism 40 is provided with a vertical operation portion 43 that vertically moves the pair of irradiation portions 42, and a rotation motor 44 that winds the pair of irradiation portions 42 The central axis of the wafer W is rotated. The vertical movement portion 43 adjusts the height of the pair of irradiation portions 42 with respect to the DAF tape T in accordance with the lifting operation of the frame holding mechanism 30. The rotary motor 44 rotates the pair of irradiation portions 42 to cover the entire circumference to heat the slack of the DAF tape T around the wafer W. By the vertical movement portion 43 and the rotary motor 44, the pair of irradiation portions 42 can be appropriately positioned with respect to the DAF tape T, whereby the DAF tape T around the wafer W can be favorably heated.

Further, the dividing device 1 is provided with a control mechanism 50 for integrating the respective portions of the control device. The control unit 50 is configured by a processor, a memory, or the like that executes various processes. The memory is composed of one or a plurality of storage media such as a ROM (Read Only Memory), a RAM (Random Access Memory), and the like depending on the application. The table 20 can be relatively moved by the control mechanism 50 to control the expansion operation of the DAF tape T, and the slack of the DAF tape T can be removed by the pair of irradiation portions 42 of the contraction mechanism 40 to control the DAF tape. The contraction action of T.

In the dividing device 1 as described above, the frame holding mechanism 30 is lowered in a state in which the annular frame F is held in the cold air atmosphere in the divided chamber 13, whereby the table 20 is removed from the cover 32 and The circular openings 33, 34 on which the table 31 is placed protrude. By pushing the table 20 relatively upward with respect to the frame holding mechanism 30, the DAF tape T can be expanded in the radial direction to divide the wafer W into individual wafers C (see FIG. 3B). Further, when the frame holding mechanism 30 is raised to release the expansion of the DAF tape T, the tension of the DAF tape T is relaxed. At this time, the DAF tape T can be thermally contracted by the far infrared rays from the irradiation unit 42 to prevent the DAF tape T around the wafer W from being slack.

However, as shown in FIG. 2A, when the wafer W is to be divided in the normal temperature ambient gas, the wafer D may not be well divided by the elongation of the DAF 56 during the expansion of the DAF tape T. That is, when the DAF tape T is expanded, the wafer W is left and the DAF 56 is stretched together with the tape substrate, and the external force generated by the expansion of the DAF tape T cannot be transmitted to the wafer W. Further, since the tape W is attached to the adhesive on the tape substrate even for the tape other than the DAF tape T, the wafer W is left and the adhesive is stretched together with the tape substrate. Therefore, the wafer W is not well divided. In particular, in a normal temperature ambient gas, since the DAF tape or the tape other than the DAF tape between the outer periphery of the wafer and the inner circumference of the annular frame is expanded, the expansion of the tape does not contribute to the division of the wafer.

Therefore, a configuration that can be considered is to suppress the elongation of the DAF 56 in the cold air atmosphere as shown in FIG. 2B to integrally divide the wafer W and the DAF 56. By the expansion of the DAF tape T in the cold air atmosphere, the DAF tape T becomes more difficult to extend at the position where the wafer W is attached than the position where the wafer W is not attached. Thereby, at the time of expansion of the DAF tape T, the DAF 56 becomes difficult to extend at the position where the wafer W is attached, and the wafer W and the DAF 56 can be integrally divided. Similarly, in other tapes, since the adhesive can be not softened by cooling the adhesive of the tape, the wafer W can be well divided by the expansion of the tape.

However, in the cold air atmosphere, a general heater such as hot air blowing cannot be used at the time of heat shrinkage of the DAF tape T. Therefore, in consideration of the cooling efficiency, it is generally formed to provide a heating device that thermally relaxes the relaxation of the DAF tape T in a region separate from the cooling device that manufactures the cold air ambient gas. However, since the wafer W is transferred from the cooling device to the heating device without the slack of the DAF tape T being removed, the wafers C are rubbed against each other due to the relaxation of the DAF tape T, and are on the wafer C. There are scratches or defects on the sides. Further, there is a problem that the device configuration is complicated and the device is increased in size.

Therefore, in the present embodiment, the wafer W is divided together with the DAF 56 by expanding the DAF tape T in the cold air atmosphere, and further from the irradiation portion 42 after the division of the wafer W in the same chamber. The far infrared ray is irradiated to the relaxation of the DAF tape T. Since the far-infrared rays themselves do not have heat and do not warm the air, it is possible to heat only the irradiation position of the DAF tape T without increasing the temperature in the room. Thereby, the wafer W can be well divided in the cold air atmosphere, and the relaxation of the DAF tape T can be thermally contracted while maintaining the cold air atmosphere gas, and the reduction in the cooling efficiency can be suppressed and the wafer W after the division can be prevented. The quality caused by rubbing, etc. is reduced.

Hereinafter, the division operation performed by the division device of the present embodiment will be described with reference to Fig. 3 . Fig. 3 is an explanatory diagram of a dividing operation performed by the dividing device of the embodiment. 3A is an example of a holding step and a cooling step, FIG. 3B is an example of a dividing step, and FIG. 3C is an example of a tape shrinking step.

As shown in FIG. 3A, the holding step is first performed. In the holding step, the workpiece group WS is carried into the dividing chamber 13 of the dividing box 10, and the wafer W is placed on the table 20 via the DAF tape T, and the ring frame F around the wafer W is placed. It is held by the frame holding mechanism 30. Further, when the workpiece group WS is carried into the split box 10, the split box 10 is closed by the opening and closing mechanism 14, and the partition chamber 13 is hermetically sealed so as not to allow outside air to enter. At this time, the opening and closing valve 24 that is connected to the table 20 is closed, and the suction force from the suction source 26 to the table 20 is blocked.

Next, a cooling step is performed after the holding step. In the cooling step, cold air is supplied into the divided chamber 13 from the supply port of the cold air supply mechanism 15 of the split box 10, and the workpiece group WS is exposed to the cold air in the split chamber 13 and cooled. At this time, since the wall surface of the dividing box 10 is formed by a heat insulating material or the like, the inside of the dividing chamber 13 can be satisfactorily cooled. Thereby, the wafer W and the DAF tape T can be hardened, and the DAF tape T becomes harder to extend at the position where the wafer W is attached than the position where the wafer W is not attached. That is, the wafer W and the DAF 56 are integrated at the attachment position of the wafer W.

As shown in FIG. 3B, the dividing step is performed after the cooling step. In the dividing step, the frame holding mechanism 30 is lowered in the cold air environment so that the table 20 is separated from the frame holding mechanism 30. Thereby, the DAF tape T can be expanded in the radial direction, and an external force acts on the modified layer 55 (see FIG. 3A) whose strength has been lowered, and the wafer W and the DAF 56 are divided into one together with the modified layer 55 as a starting point. Chip C. At this time, since the DAF 56 and the wafer W are integrated by the cold air atmosphere in the division chamber 13, the DAF 56 is not stretched with the expansion of the DAF tape T, and the DAF 56 and the crystal can be used. The circle W is divided together.

As shown in FIG. 3C, the shrinking step is performed after the dividing step. In the shrinking step, when the wafer W is divided into individual wafers C, the on-off valve 24 is opened to generate an attractive force on the stage 20. The frame holding mechanism 30 can be raised in a state where the wafer C has been sucked and held by the table 20 via the DAF tape T, and the table 20 is brought close to the frame holding mechanism 30. Therefore, on the other hand, on the stage 20, the DAF tape T is sucked and held in a state in which the wafers C are spaced apart, and on the other hand, between the outer periphery of the wafer W and the inner circumference of the ring frame F, The tension of the DAF tape T is relaxed to cause slack.

At this time, the contraction mechanism 40 is positioned above the wafer W, and the pair of irradiation portions 42 are wound by the rotation motor 44 (see FIG. 1) to start thermal contraction of the relaxation of the DAF tape T. The height of the irradiation unit 42 can be adjusted by the vertical movement unit 43 (see FIG. 1 ) in accordance with the movement of the frame holding mechanism 30 , and the outer circumference of the wafer W and the inner circumference of the annular frame F can be made from the pair of irradiation units 42 . The far-infrared rays are irradiated between the relaxed DAF tapes T. Since only the DAF tape T around the wafer W is thermally contracted, even if the suction of the table 20 is released, the interval between the adjacent wafers C can be fixed in a maintained state.

Further, since the surrounding air is not heated by the far infrared rays without heat, only the DAF tape T is partially heated, so that the temperature rise in the division chamber 13 can be suppressed. In this manner, the division of the wafer W and the thermal contraction of the DAF tape T can be continuously performed while the inside of the divided box 10 is maintained in the cold air atmosphere. According to this, it is possible to simplify the device configuration, and it is possible to prevent deterioration in quality due to rubbing or the like of the wafer C after the division of the wafer W. Further, although the cooling chamber is configured to supply cold air to the divided chamber 13, the cooling chamber may be continuously supplied to the divided chamber 13 in the dividing step or the holding step. Thereby, it is possible to more reliably fix the wafers that are far apart.

As described above, in the dividing device 1 of the present embodiment, the DAF tape T can be expanded in a state where the inside of the divided chamber 13 is a cold air atmosphere gas, and the wafer W can be divided into individual wafers starting from the dividing starting point. C. At this time, since the DAF tape T is cooled together with the wafer W, the DAF tape T becomes difficult to elongate at the adhesion position of the wafer, and the external force when the DAF tape T is expanded is directly applied to the wafer W, and It becomes easy to split. Further, after the division of the wafer W, the relaxation of the DAF tape T around the wafer W can be thermally contracted by the irradiation of far infrared rays in the division chamber 13. Since the DAF tape T is partially heated by far infrared rays, the temperature rise of the division chamber 13 can be suppressed and the slack of the DAF tape T can be favorably removed in the cooling ambient gas. In addition, since the division of the wafer W and the thermal contraction of the DAF tape T are performed in the division chamber 13, the interval between the divided wafers C can be carried out while being fixed, so that the wafers C can be prevented from each other. The quality caused by rubbing, etc. is reduced.

Further, in the present embodiment, the configuration is such that the elevating mechanism and the contraction mechanism are housed in the divided chamber, but the configuration is not limited thereto. The elevating mechanism may be configured such that the frame holding mechanism can be moved away from the table and moved out in the divided chamber, and the driving portion of the elevating mechanism can be disposed outside the dividing chamber. Further, the contraction mechanism may be configured to irradiate the tape with far infrared rays in the divided chamber, and the rotation motor of the contraction mechanism may be provided outside the division chamber. As shown in FIG. 4, the driving portion 62 of the elevating mechanism 61 or the rotation motor 65 of the retracting mechanism 64 is provided outside the division chamber 67, whereby there is no case where the compartment 67 is heated by the driving heat, and The division chamber 67 can be made smaller and the cooling time by the cold air supply mechanism 68 can be shortened.

Further, in the present embodiment, the configuration is such that the elevating mechanism moves the frame holding mechanism up and down with respect to the table, but the configuration is not limited thereto. The elevating mechanism may be configured to allow the table to be relatively close to and away from the frame holding mechanism, and may be configured to elevate and lower the table with respect to the frame holding mechanism, for example. Further, the elevating mechanism is not limited to the electric cylinder, and may be constituted by other actuators.

Further, in the present embodiment, the DAF tape in which the DAF is laminated on the tape substrate is exemplified and described as a tape, but the configuration is not limited thereto. The tape may be any tape formed with an adhesive layer on a tape substrate which is heat-shrinkable.

Further, in the present embodiment, the configuration is such that the upper case and the lower case are formed to form the divided chamber, but the configuration is not limited thereto. The dividing chamber may be formed in any form as long as it can accommodate the frame holding mechanism and the table.

Further, in the present embodiment, the opening and closing mechanism is configured as a cylinder, but the configuration is not limited thereto. The opening and closing mechanism may be configured such that a part of the divided chamber can be opened and closed, and the workpiece group can be carried in and out of the divided chamber.

Further, in the present embodiment, the cooling air supply mechanism is provided in the upper portion of the divided box, but the configuration is not limited thereto. The cold air supply means is not particularly limited as long as it is a structure capable of supplying cold air to the divided chamber to set the divided indoor air-conditioned atmosphere, and the installation position of the split box or the cooling method in the divided chamber.

Further, although the embodiment of the present invention has been described, another embodiment of the present invention may be a combination of the above-described embodiment and the modification as a whole or in part.

The embodiment of the present invention is not limited to the above-described embodiments and modifications, and various changes, substitutions, and modifications may be made without departing from the spirit and scope of the invention. In addition, if the technical idea of the present invention can be implemented in other ways through advances in technology or other technologies derived therefrom, the method can also be implemented. Accordingly, the scope of the patent application covers all embodiments that can be included within the scope of the technical idea of the invention.

Further, in the present embodiment, the present invention has been described with respect to a configuration suitable for a dividing device, but may be another expansion device suitable for appropriately expanding the tape. Industrial availability

As described above, the present invention has the effect of being able to divide the wafer well and remove the slack of the tape in a case where the device is constructed with a simple device and the cooling efficiency is not lowered, particularly in the wafer to which the DAF tape has been attached. It is particularly useful for dividing the dividing device and the dividing method.

1‧‧‧Splitting device

10‧‧‧ split box

11‧‧‧Upper box

12‧‧‧Unbox

13, 67‧‧ ‧ split room

14‧‧‧Opening and closing institutions

15, 68‧‧‧Air supply mechanism

20‧‧‧Workbench

21‧‧‧ Pillars

22‧‧‧Multiwell plate

23‧‧‧ Keep face

24‧‧‧ switch valve

25‧‧‧Roller

26‧‧‧Attraction source

30‧‧‧Frame keeping agency

31‧‧‧Loading the workbench

32‧‧‧ Cover

33, 34‧‧‧ openings

36, 61‧‧‧ Lifting mechanism

37‧‧‧Cylinder rod

40, 64‧‧‧ Shrinking mechanism

41‧‧‧Swing arm

42‧‧‧ Department of Irradiation

43‧‧‧Up and down action department

44, 65‧‧‧ rotating motor

50‧‧‧Control agency

55‧‧‧Modified layer (segment starting point)

56‧‧‧DAF (adhesive film)

62‧‧‧ Drive section

C‧‧‧ wafer

F‧‧‧Ring frame

L‧‧‧ dividing line

T‧‧‧DAF tape

W‧‧‧ wafer

WS‧‧‧Workpiece Group

Fig. 1 is a perspective view of a dividing device of the embodiment. FIG. 2 is an explanatory diagram of a dividing operation and a heat shrinking operation of the dividing device of the comparative example. Fig. 3 is an explanatory diagram of a dividing operation performed by the dividing device of the embodiment. 4 is a schematic side view of a dividing device according to a modification.

Claims (2)

A dividing device is characterized in that a wafer on which a dividing starting point has been formed is attached to a tape, and the tape of the integrated workpiece group is expanded, and the wafer is divided by the starting point of the dividing end, wherein the tape is annular The opening of the frame is clogged and attached, and the dividing device is characterized by: a frame holding mechanism for holding the annular frame; and a table having a holding surface which is a workpiece group held by the frame holding mechanism a tape to hold the wafer; a dividing chamber to accommodate the frame holding mechanism and the table; an opening and closing mechanism to open and close a part of the dividing chamber to carry in and carry out the workpiece group in the divided chamber; and a cold air supply mechanism to the divided indoor Supplying cold air to set the divided chamber as a cool air atmosphere; and elevating mechanism for relatively close to and away from the frame holding mechanism in a direction orthogonal to the holding surface in the dividing chamber; and a retracting mechanism The tape is irradiated to the far infrared rays between the outer periphery of the wafer attached to the tape that has been expanded in the dividing chamber and the inner circumference of the annular frame The wire is contracted to fix the interval between adjacent wafers, and in the compartment of the cold ambient gas, the table is moved away from the frame holding mechanism to expand the tape to divide the wafer, and the holding surface is Maintaining the expanded tape to bring the table closer to the frame holding mechanism, and the relaxed tape between the outer circumference of the wafer and the inner circumference of the annular frame is irradiated with far infrared rays to cause contraction thereof. The spacing of adjacent wafers is fixed. A method for dividing a wafer by using a wafer dividing method according to the dividing device of claim 1, and comprising: a holding step of loading the workpiece group into the dividing chamber, and holding the workpiece group by the frame holding mechanism a cooling step of supplying cold air to the divided chamber to cool the workpiece set; a dividing step of, after the cooling step, moving the table and the frame holding mechanism in a direction away from each other, and expanding the tape to divide the wafer And a shrinking step of holding the tape with the holding surface in the dividing chamber after the dividing step, and irradiating the relaxed tape between the outer circumference of the wafer and the inner circumference of the annular frame with far infrared rays, so that The tape shrinks.