JP2018113350A - Dividing device and dividing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To satisfactorily divide a wafer without reducing cooling efficiency with a simple device configuration, and eliminate loosening of a tape.SOLUTION: A dividing device (1) divides a wafer (W) supported by a ring frame (F) with a DAF tape (T) therebetween by means of extension of the DAF tape with a modified layer (55) as a starting point, and comprises: a table (20) that holds the wafer with the DAF tape therebetween; frame holding means (30) that holds the ring frame around the wafer; a dividing box (10) that accommodates the table and frame holding means; cool air supply means (15) that supplies cool air into the dividing box to produce a cool air atmosphere; elevating means (36) that relatively brings the table and frame holding means into proximity to each other and separates the table and frame holding means from each other; and contraction means (40) that thermally contracts, with an infrared ray, the DAF tape around the wafer loosened by the cool air atmosphere to fix the intervals between chips.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a dividing apparatus and a dividing method for dividing a wafer into individual chips.

  2. Description of the Related Art Conventionally, as a splitting device, a wafer that is supported on a ring frame via a tape is split along the split starting point formed on the wafer by expanding the tape (for example, Patent Document 1). 2). In these dividing apparatuses, the wafer is held on the dividing table and the ring frame is held on the ring-shaped table, and the wafer is pushed up relative to the ring frame. As a result, the tape is expanded in the radial direction, an external force is applied from the tape to the division starting point of the wafer, and the wafer is divided into individual chips along the division starting point.

JP 2006-004832 A JP 2007-027250 A

  By the way, even if the tape is expanded in a room temperature atmosphere, only the tape is stretched leaving the wafer, and the wafer may not be divided well. In view of this, a method has been proposed in which a cooling apparatus is provided in the dividing device and the wafer is divided by expanding the tape in a cold atmosphere. In addition, after the wafer is divided, it is necessary to thermally shrink the tape slack around the wafer caused by tape expansion in order to fix the chip interval. Tape slack is removed in a separate unit. However, when the divided wafer is transported from the cooling facility, there is a problem that scratches or chips are generated on the side surface of the chip due to friction between the chips.

  The present invention has been made in view of the above points, and provides a dividing apparatus and a dividing method that can divide a wafer well and remove tape slack without reducing cooling efficiency with a simple apparatus configuration. One of the purposes is to do.

  The dividing device according to one aspect of the present invention is a method of expanding a tape of a work set in which a wafer having a division starting point is attached and integrated on a tape attached by closing an opening of a ring frame, and the wafer is started from the dividing starting point. A frame holding means for holding the ring frame, a table having a holding surface for holding a wafer via the tape of a work set held by the frame holding means, and the frame holding means And a partition chamber for storing the table, opening / closing means for opening and closing a part of the partition chamber to enable loading and unloading of the work set, and supplying the cool air to the partition chamber A cool air supply means for bringing the room into a cool air atmosphere, and a lift for moving the table and the frame holding means relatively close to and away from each other in the direction perpendicular to the holding surface in the divided chamber. Shrinkage for fixing the distance between adjacent chips by irradiating the tape between the outer periphery of the wafer and the outer periphery of the wafer attached to the tape expanded in the division chamber and the inner periphery of the ring frame And the table is separated from the frame holding means to expand the tape to divide the wafer, and the holding surface holds the expanded tape with the table. The frame holding means is brought close to the tape, and the loose tape between the outer periphery of the wafer and the inner periphery of the ring frame is irradiated with a far infrared ray to contract to fix the interval between adjacent chips. .

  According to this configuration, the tape is expanded in a state where the division chamber is in a cold atmosphere, and the wafer is divided into individual chips starting from the division starting point. At this time, since the tape is cooled together with the wafer, it is difficult for the tape to extend at the location where the wafer is attached, and an external force during expansion of the tape is directly applied to the wafer and is easily broken. Further, after the wafer is divided, the slack of the tape around the wafer is thermally contracted by irradiation of far infrared rays in the dividing chamber. Since the tape is partially heated by the far infrared rays, it is possible to satisfactorily remove the tape slack in the cooling atmosphere while suppressing the temperature rise in the division chamber. In addition, since the wafer is divided and the tape is thermally contracted in the dividing chamber, the wafer is conveyed in a state in which the interval between the divided chips is fixed, so that deterioration in quality due to rubbing between chips is prevented.

  A dividing method according to an aspect of the present invention is a wafer dividing method using the above-described dividing apparatus, a holding step of carrying a work set into the dividing chamber and holding the work set by the frame holding means, and the dividing A cooling step of cooling the work set by supplying cold air to the room; and a dividing step of dividing the wafer by operating the table and the frame holding means in a direction to separate the wafer and expanding the tape after the cooling step. After the dividing step, the holding surface holds the tape in the dividing chamber and shrinks the tape by contracting the tape by irradiating the loose tape between the outer periphery of the wafer and the inner periphery of the ring frame. A process.

  According to the present invention, by dividing the wafer in a cool air atmosphere and thermally contracting the slack of the tape with far-infrared rays, it is possible to suppress a decrease in cooling efficiency with a simple device configuration and to rub the wafer after division. It is possible to prevent quality deterioration due to the above.

It is a perspective view of the dividing device of this Embodiment. It is explanatory drawing of the division | segmentation operation | movement and heat shrink operation | movement of the division | segmentation apparatus of a comparative example. It is explanatory drawing of the division | segmentation operation | movement by the division | segmentation apparatus of this Embodiment. It is a side surface schematic diagram of the division | segmentation apparatus of a modification.

  Hereinafter, with reference to the accompanying drawings, the dividing apparatus according to the present embodiment will be described. FIG. 1 is a perspective view of the dividing apparatus according to the present embodiment. The dividing device is not limited to the configuration described in FIG. 1 and can be changed as appropriate.

  As shown in FIG. 1, the dividing apparatus 1 includes a wafer W supported on a ring frame F via a DAF (Dai Attach Film) tape T, and individual chips C (FIG. 1) by expanding the DAF tape T in a cold atmosphere. 3B). Further, the dividing apparatus 1 is configured to remove the slack of the DAF tape T generated between the outer periphery of the wafer W and the inner periphery of the ring frame F when the expansion of the DAF tape T is released by heat shrink. Yes. In this way, only the portion where the DAF tape T is stretched and slackened is thermally contracted, and the distance between the chips C is maintained so that the chips C after the division of the wafer W do not come into contact with each other and are damaged.

  A lattice-shaped division planned line L is provided on the surface of the wafer W, and various devices (not shown) are formed in each region partitioned by the division planned line L. The wafer W may be a semiconductor wafer in which a device such as IC or LSI is formed on a semiconductor substrate such as silicon or gallium arsenide, or an optical device such as an LED is formed on a ceramic, glass or sapphire inorganic material substrate. An optical device wafer may be used. The wafer W is attached to the DAF tape T attached to the ring frame F, and the work set WS in which the wafer W, the ring frame F, and the DAF tape T are integrated is carried into the dividing device 1.

  The ring frame F of the work set WS is closed at the opening by a DAF tape T having heat shrinkability, and the wafer W is adhered to the DAF tape T inside the opening. Inside the wafer W, a modified layer 55 (see FIG. 3A) is formed as a division starting point along the division line L. The modified layer 55 is a region where the density, refractive index, mechanical strength and other physical characteristics of the wafer W are different from the surroundings due to laser irradiation, and the strength is lower than the surroundings. . The modified layer 55 is, for example, a melt processing region, a crack region, a dielectric breakdown region, or a refractive index change region, and may be a region in which these are mixed.

  Further, in the following description, the modified layer 55 (see FIG. 3A) formed inside the wafer W is exemplified as the division starting point, but is not limited to this configuration. The division starting point only needs to be a starting point at the time of dividing the wafer W, and may be constituted by, for example, a laser processing groove, a cutting groove, or a scribe line. Further, the DAF tape T may be any material as long as the DAF 56 is laminated on the surface, has stretchability and has heat shrinkability, and the material is not particularly limited. The tape base material of the DAF tape T is preferably formed of, for example, PO (Polyolefin) or PVC (Polyvinyl Chloride) which is easily contracted by far infrared rays.

  The dividing apparatus 1 is provided with a dividing box 10 including an upper box 11 and a lower box 12, and a dividing chamber 13 for dividing the wafer W is formed in the dividing box 10. The upper box 11 and the lower box 12 are connected via an opening / closing means 14, and the upper box 11 and the lower box 12 are opened by the opening / closing means 14, thereby enabling the work set WS to be carried in and out. The opening / closing means 14 is composed of an air cylinder, and the upper box 11 is connected to a cylinder rod protruding from a cylinder provided in the lower box 12. The upper box 11 is provided with cold air supply means 15 for supplying cold air into the dividing chamber 13 to make the inside of the dividing chamber 13 a cold air atmosphere.

  A table 20 capable of sucking and holding the wafer W via the DAF tape T of the work set WS is disposed in the division chamber 13 (lower box 12), and the ring frame F of the work set WS is held around the table 20 A frame holding means 30 is disposed. The table 20 is supported by a plurality of support columns 21, and a porous porous plate 22 is disposed on the upper surface of the table 20. A holding surface 23 that sucks and holds the wafer W is formed on the upper surface of the table 20 by the porous porous plate 22. The holding surface 23 is connected to a suction source 26 (see FIG. 3A) through a flow path in the table 20, and the wafer W is sucked and held by the negative pressure generated on the holding surface 23.

  In addition, an opening / closing valve 24 (see FIG. 3A) is provided in a flow path that extends from the holding surface 23 to the suction source 26, and suction holding and suction release of the holding surface 23 with respect to the wafer W are switched by the opening / closing valve 24. . A plurality of roller portions 25 are rotatably provided on the outer peripheral edge of the table 20 over the entire periphery. The plurality of roller portions 25 are in rolling contact with the DAF tape T around the wafer W from below while the wafer W is held on the holding surface 23. Since the plurality of roller portions 25 are in rolling contact with the DAF tape T, friction of the DAF tape T generated at the outer peripheral edge of the table 20 when the DAF tape T is expanded is suppressed.

  The frame holding means 30 holds the ring frame F on the mounting table 31 such that the ring frame F on the mounting table 31 is sandwiched from above by the cover plate 32. In the center of the mounting table 31 and the cover plate 32, circular openings 33 and 34 having a diameter larger than that of the table 20 are formed. When the cover plate 32 is placed on the mounting table 31, the ring frame F is held by the cover plate 32 and the mounting table 31, and the wafer W and the circular openings 33 and 34 of the mounting table 31 and the cover plate 32 are connected. A part of the DAF tape T is exposed to the outside.

  In the frame holding means 30, the cover plate 32 is fixed to the mounting table 31 by, for example, a clamp unit (not shown) in a state where the cover plate 32 is put on the ring frame F on the mounting table 31. The frame holding means 30 is supported by an elevating means 36 that separates and approaches the table 20 and the frame holding means 30 in the direction perpendicular to the holding surface 23 in the divided chamber 13. The elevating means 36 is composed of four electric cylinders that support the four corners of the mounting table 31. The distance between the wafer W on the table 20 and the frame holding means 30 is adjusted by controlling the protruding amount of the cylinder rod 37 of the elevating means 36.

  In the dividing chamber 13 (upper box 11), a contracting means 40 for contracting slack generated in the DAF tape T is provided. The contraction means 40 is provided on the central axis of the wafer W, and a pair of irradiation portions 42 are arranged at both ends of the turning arm 41 so as to face each other with the center of the wafer W interposed therebetween. The irradiation unit 42 is configured to spot-irradiate far infrared rays having a peak waveform of 3 μm to 25 μm that is difficult to be absorbed by a metal material, for example. Thereby, the heating of each part of the apparatus is suppressed, and the slack of the DAF tape T between the outer periphery of the wafer W and the inner periphery of the ring frame F is partially heated and thermally contracted.

  In addition, the turning arm 41 of the contracting means 40 is provided with a vertical operation unit 43 that moves the pair of irradiation units 42 up and down, and a rotation motor 44 that rotates the pair of irradiation units 42 around the central axis of the wafer W. Yes. The vertical movement unit 43 adjusts the height of the pair of irradiation units 42 with respect to the DAF tape T in accordance with the vertical movement of the frame holding unit 30. The rotation motor 44 rotates the pair of irradiation units 42 so that the slack of the DAF tape T around the wafer W is heated over the entire circumference. The DAF tape T around the wafer W is satisfactorily heated by appropriately positioning the pair of irradiation units 42 with respect to the DAF tape T by the vertical movement unit 43 and the rotary motor 44.

  Further, the dividing device 1 is provided with a control unit 50 that performs overall control of each part of the device. The control unit 50 includes a processor that executes various processes, a memory, and the like. The memory is composed of one or a plurality of storage media such as a ROM (Read Only Memory) and a RAM (Random Access Memory) depending on the application. The table 20 and the frame holding means 30 are moved relative to each other by the control means 50 to control the expansion operation of the DAF tape T, and the slack of the DAF tape T is removed by the pair of irradiation portions 42 of the contraction means 40 so that the DAF tape T The contraction movement of the is controlled.

  In such a dividing apparatus 1, the frame holding means 30 is lowered while holding the ring frame F in a cool air atmosphere in the dividing chamber 13, so that the circular opening 33 of the cover plate 32 and the mounting table 31, The table 20 protrudes from 34. As the table 20 is pushed up relative to the frame holding means 30, the DAF tape T is expanded in the radial direction, and the wafer W is divided into individual chips C (see FIG. 3B). Further, when the frame holding means 30 is raised and the expansion of the DAF tape T is released, the tension of the DAF tape T is released. At this time, the DAF tape T is heated and thermally contracted by the far infrared rays from the irradiation unit 42 so that the DAF tape T around the wafer W is not loosened.

  By the way, as shown in FIG. 2A, if the wafer W is to be divided in a room temperature atmosphere, the DAF 56 expands when the DAF tape T is expanded, and the wafer W cannot be divided well. That is, when the DAF tape T is expanded, the DAF 56 is stretched together with the tape base material while leaving the wafer W, and external force due to the expansion of the DAF tape T is not transmitted to the wafer W. Further, even if the tape is other than the DAF tape T, since the wafer W is adhered to the adhesive paste on the tape substrate, only the adhesive paste is stretched together with the tape substrate, leaving the wafer W. W is not divided well. In particular, in a normal temperature atmosphere, the DAF tape between the outer periphery of the wafer and the inner periphery of the ring frame or a tape other than the DAF tape is expanded, so that the tape expansion does not contribute to the division of the wafer.

  For this reason, as shown to FIG. 2B, the structure which divides | segments the wafer W and DAF56 integrally can be considered, suppressing the expansion | extension of DAF56 in a cold atmosphere. Due to the expansion of the DAF tape T in a cool air atmosphere, the DAF tape T is less likely to be stretched at the location where the wafer W is adhered than at the location where the wafer W is not adhered. As a result, when the DAF tape T is expanded, the DAF 56 becomes difficult to extend at the location where the wafer W is stuck, and the wafer W and the DAF 56 are divided into one piece. Similarly, in other tapes, the adhesive paste of the tape is cooled, so that the adhesive paste is not softened. Therefore, the wafer W is divided well by the expansion of the tape.

  However, in a cold atmosphere, a general heater that blows hot air when the DAF tape T is thermally contracted cannot be used. For this reason, normally, in consideration of cooling efficiency, a heating facility for heat-shrinking the slack of the DAF tape T is provided in an area different from the cooling facility for creating a cool air atmosphere. However, since the wafer W is conveyed from the cooling facility to the heating facility without removing the slack of the DAF tape T, the slack of the DAF tape T causes the chips C to rub against each other, resulting in scratches and chipping on the side surfaces of the chip C. Was. Further, there is a problem that the apparatus configuration becomes complicated and the apparatus becomes large.

  Therefore, in the present embodiment, the wafer W is divided together with the DAF 56 by expanding the DAF tape T in a cold atmosphere, and further, the wafer W is divided in the same room, and then the distance from the irradiation unit 42 to the slack of the DAF tape T is separated. Infrared spot irradiation is performed. Since far-infrared radiation itself has no heat and does not warm the air, only the irradiated portion of the DAF tape T is heated without raising the temperature in the room. As a result, the wafer W is properly divided in the cold air atmosphere, and the slackness of the DAF tape T is thermally contracted while maintaining the cold air atmosphere, and the quality due to rubbing of the wafer W after the division is suppressed while suppressing the cooling efficiency. A decrease can be prevented.

  Hereinafter, with reference to FIG. 3, the dividing operation by the dividing apparatus of the present embodiment will be described. FIG. 3 is an explanatory diagram of the dividing operation by the dividing apparatus according to the present embodiment. 3A shows an example of the holding process and the cooling process, FIG. 3B shows an example of the dividing process, and FIG. 3C shows an example of the tape shrinking process.

  As shown in FIG. 3A, a holding step is first performed. In the holding step, the work set WS is carried into the dividing chamber 13 of the dividing box 10, the wafer W is placed on the table 20 via the DAF tape T, and the ring frame F around the wafer W is attached to the frame holding means. 30. When the work set WS is carried into the dividing box 10, the dividing box 10 is closed by the opening / closing means 14, and the dividing chamber 13 is hermetically sealed so that outside air does not enter. At this time, the open / close valve 24 connected to the table 20 is closed, and the suction force from the suction source 26 to the table 20 is shut off.

  Next, a cooling process is implemented after a holding process. In the cooling step, cold air is supplied into the division chamber 13 from the supply port of the cold air supply means 15 of the division box 10, and the work set WS is exposed to the cold air in the division chamber 13 to be cooled. At this time, since the wall surface of the dividing box 10 is formed of a heat insulating material or the like, the inside of the dividing chamber 13 can be cooled well. As a result, the wafer W and the DAF tape T are cured, and the DAF tape T is less likely to be stretched at the location where the wafer W is adhered than at the location where the wafer W is not adhered. That is, the wafer W and the DAF 56 are integrated at the place where the wafer W is attached.

  As shown in FIG. 3B, the dividing step is performed after the cooling step. In the dividing step, the frame holding means 30 is lowered in a cold atmosphere, and the table 20 and the frame holding means 30 are separated. As a result, the DAF tape T is expanded in the radial direction, and an external force acts on the modified layer 55 (see FIG. 3A) whose strength has been reduced, and the wafer W together with the DAF 56 from the modified layer 55 serves as an individual chip. Divided into C. At this time, since the DAF 56 is integrated with the wafer W by the cool air atmosphere in the dividing chamber 13, the DAF 56 is not stretched along with the expansion of the DAF tape T, and the DAF 56 is divided together with the wafer W.

  As shown in FIG. 3C, the shrinking step is performed after the dividing step. In the shrinking process, when the wafer W is divided into individual chips C, the opening / closing valve 24 is opened and a suction force is generated on the table 20. In a state where the chip C is sucked and held by the table 20 via the DAF tape T, the frame holding means 30 is raised and the table 20 and the frame holding means 30 are brought close to each other. Therefore, while the DAF tape T is sucked and held on the table 20 with the chips C spaced apart, the tension of the DAF tape T is loosened and loosened between the outer periphery of the wafer W and the inner periphery of the ring frame F. Will occur.

  At this time, the contraction means 40 is positioned above the wafer W, and the pair of irradiation sections 42 are turned by the rotation motor 44 (see FIG. 1), and the thermal contraction of the slack of the DAF tape T is started. As the height of the irradiation unit 42 is adjusted by the up-and-down operation unit 43 (see FIG. 1) in accordance with the movement of the frame holding means 30, the distance between the outer periphery of the wafer W and the inner periphery of the ring frame F is adjusted. Far-infrared rays are irradiated on the loosened DAF tape T. Since only the DAF tape T around the wafer W is thermally shrunk, even if the suction holding of the table 20 is released, the distance between the adjacent chips C is fixed.

  Further, since only the DAF tape T is partially heated without warming the surrounding air with far infrared rays having no heat, it is possible to suppress the temperature rise in the divided chamber 13. In this manner, the wafer W is divided and the DAF tape T is thermally contracted continuously while the inside of the dividing box 10 is maintained in a cool air atmosphere. Therefore, the apparatus configuration can be simplified, and quality deterioration due to rubbing of the chip C after the wafer W is divided can be prevented. In addition, although it was set as the structure which supplies cool air to the division chamber 13 at a cooling process, you may make it continue supplying cold air to the division chamber 13 also in a division process or a holding process. As a result, the spaced chips can be more reliably fixed.

  As described above, in the dividing apparatus 1 of the present embodiment, the DAF tape T is expanded in a state where the inside of the dividing chamber 13 is in a cold atmosphere, and the wafer W is divided into individual chips C starting from the dividing starting point. The At this time, since the DAF tape T is cooled together with the wafer W, the DAF tape T is difficult to extend at the wafer attachment position, and the external force when the DAF tape T is expanded is directly applied to the wafer W and cracked. It is easy. Further, after the wafer W is divided, the slack of the DAF tape T around the wafer W is thermally contracted by irradiation with far infrared rays in the dividing chamber 13. Since the DAF tape T is partially heated by the far-infrared rays, it is possible to satisfactorily remove the slack of the DAF tape T in the cooling atmosphere while suppressing the temperature rise in the dividing chamber 13. Further, since the wafer W is divided in the dividing chamber 13 and the heat shrinkage of the DAF tape T is performed, the chips C are transported in a state where the distance between the divided chips C is fixed. Is prevented.

  In the present embodiment, the elevating means and the contracting means are accommodated in the divided chamber, but the present invention is not limited to this configuration. The lifting means may be configured to separate and carry the frame holding means and the table in the division chamber, and the drive portion of the lifting means may be provided outside the division chamber. The contraction means may be configured to irradiate far-infrared rays onto the tape in the division chamber, and the rotation motor of the contraction means may be provided outside the division chamber. As shown in FIG. 4, the drive portion 62 of the elevating means 61 and the rotation motor 65 of the contraction means 64 are provided outside the division chamber 67, so that the inside of the division chamber 67 is not warmed by drive heat, and the division chamber is not heated. The cooling time by the cold air supply means 68 can be shortened by reducing 67.

  Moreover, in this Embodiment, although the raising / lowering means made it the structure which raises / lowers a flame | frame holding means with respect to a table, it is not limited to this structure. The elevating means may be configured to relatively move the table and the frame holding means closer to and away from each other. For example, the elevating means may be configured to elevate the table relative to the frame holding means. Further, the elevating means is not limited to the electric cylinder, and may be constituted by other actuators.

  In the present embodiment, the DAF tape in which the DAF is laminated on the tape base material is described as an example of the tape. However, the present invention is not limited to this configuration. The tape should just be a tape by which the adhesion layer was formed on the tape base material which heat-shrinks.

  In the present embodiment, the division chamber is formed by the upper box and the lower box. However, the present invention is not limited to this configuration. The dividing chamber may be formed in any manner as long as it can accommodate the frame holding means and the table.

  In the present embodiment, the opening / closing means is an air cylinder. However, the present invention is not limited to this configuration. The opening / closing means may be configured to open and close a part of the division chamber so that the work set can be carried into and out of the division chamber.

  Moreover, in this Embodiment, although it was set as the structure by which a cold air supply means is provided in the upper part of a division box, it is not limited to this structure. The cold air supply means may be configured to supply cold air into the division chamber to make the division chamber a cold air atmosphere, and the installation position with respect to the division box and the cooling method in the division chamber are not particularly limited.

  Moreover, although the embodiment of the present invention has been described, as another embodiment of the present invention, the above embodiment and modifications may be combined in whole or in part.

  The embodiments of the present invention are not limited to the above-described embodiments and modifications, and various changes, substitutions, and modifications may be made without departing from the spirit of the technical idea of the present invention. Furthermore, if the technical idea of the present invention can be realized in another way by technological advancement or another derived technique, the method may be used. Accordingly, the claims cover all embodiments that can be included within the scope of the technical idea of the present invention.

  In the present embodiment, the configuration in which the present invention is applied to the dividing device has been described. However, the present invention can also be applied to other expanding devices that appropriately expand the tape.

  As described above, the present invention has an effect that the wafer can be divided well and the slack of the tape can be removed without lowering the cooling efficiency with a simple apparatus configuration. The present invention is useful for a dividing device and a dividing method for dividing a bonded wafer.

DESCRIPTION OF SYMBOLS 1 Dividing apparatus 10 Dividing box 13 Dividing chamber 14 Opening / closing means 15 Cold air supplying means 20 Table 23 Holding surface 30 Frame holding means 36 Lifting means 40 Shrinking means 55 Reforming layer (division start point)
56 DAF
C Chip L Line to be split F Ring frame T DAF tape W Wafer WS Workset

Claims (2)

A dividing apparatus for expanding a tape of a work set in which a wafer having a division start point is attached to a tape attached by closing an opening of a ring frame and extending the tape, and dividing the wafer from the division start point,
Frame holding means for holding the ring frame;
A table having a holding surface for holding the wafer via the tape of the work set held by the frame holding means;
A division chamber for accommodating the frame holding means and the table;
An opening and closing means for opening and closing a part of the division chamber to enable loading and unloading of the work set into the division chamber;
Cold air supply means for supplying cold air into the divided chamber to bring the divided chamber into a cold atmosphere;
Elevating means for causing the table and the frame holding means to approach and separate in a direction perpendicular to the holding surface in the division chamber;
Shrinking means for irradiating the tape between the outer periphery of the wafer attached to the tape extended in the division chamber and the inner periphery of the ring frame to irradiate the tape and fix the interval between adjacent chips; With
The table and the frame holding means are separated from each other in the cool chamber and the tape is expanded to divide the wafer, and the expanded tape is held by the holding surface so that the table and the frame holding means are separated. A dividing apparatus characterized in that the tape is brought close to each other and irradiated with far-infrared rays on the slack tape between the outer periphery of the wafer and the inner periphery of the ring frame to fix the distance between adjacent chips. A wafer dividing method using the dividing apparatus according to claim 1,
A holding step of bringing the work set into the dividing chamber and holding the work set by the frame holding means;
A cooling step of supplying cold air into the divided chamber to cool the work set;
After the cooling step, a dividing step of operating the table and the frame holding means in a separating direction to expand the tape and divide the wafer;
After the dividing step, the shrinking step of shrinking the tape by holding the tape in the dividing chamber and irradiating the loose tape between the outer periphery of the wafer and the inner periphery of the ring frame with far infrared rays And a wafer dividing method.

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