KR102307254B1 - 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법 - Google Patents

질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법 Download PDF

Info

Publication number
KR102307254B1
KR102307254B1 KR1020167024017A KR20167024017A KR102307254B1 KR 102307254 B1 KR102307254 B1 KR 102307254B1 KR 1020167024017 A KR1020167024017 A KR 1020167024017A KR 20167024017 A KR20167024017 A KR 20167024017A KR 102307254 B1 KR102307254 B1 KR 102307254B1
Authority
KR
South Korea
Prior art keywords
tin
delete delete
surfactant
cmp
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167024017A
Other languages
English (en)
Korean (ko)
Other versions
KR20170128063A (ko
Inventor
후이-팡 호우
윌리엄 워드
밍-치 예
치-핀 차이
Original Assignee
씨엠씨 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 씨엠씨 머티리얼즈, 인코포레이티드 filed Critical 씨엠씨 머티리얼즈, 인코포레이티드
Publication of KR20170128063A publication Critical patent/KR20170128063A/ko
Application granted granted Critical
Publication of KR102307254B1 publication Critical patent/KR102307254B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H01L21/3212—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/31053—
    • H01L21/31058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167024017A 2014-02-05 2015-02-06 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법 Active KR102307254B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461936009P 2014-02-05 2014-02-05
PCT/US2015/014815 WO2015120269A1 (en) 2014-02-05 2015-02-06 Cmp method for suppression of titanium nitride and titanium/titanium nitride removal

Publications (2)

Publication Number Publication Date
KR20170128063A KR20170128063A (ko) 2017-11-22
KR102307254B1 true KR102307254B1 (ko) 2021-09-30

Family

ID=53778475

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167024017A Active KR102307254B1 (ko) 2014-02-05 2015-02-06 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법

Country Status (4)

Country Link
EP (1) EP3103133A4 (https=)
JP (1) JP6538701B2 (https=)
KR (1) KR102307254B1 (https=)
WO (1) WO2015120269A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
CN113661219A (zh) * 2019-03-25 2021-11-16 Cmc材料股份有限公司 用于改善化学机械抛光浆料的颗粒分散的添加剂
US20230136485A1 (en) * 2020-03-30 2023-05-04 Fujimi Incorporated Polishing composition
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
EP4214286A4 (en) * 2020-09-18 2024-10-23 CMC Materials LLC SILICA-BASED SLURRY FOR SELECTIVE POLISHING OF CARBON-BASED FILMS

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030073386A1 (en) 2001-08-14 2003-04-17 Ying Ma Chemical mechanical polishing compositions for metal and associated materials and method of using same
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050191823A1 (en) 2004-02-27 2005-09-01 Chiyo Horikawa Polishing composition and polishing method
US20070157524A1 (en) 2004-04-03 2007-07-12 Wolfgang Lortz Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer
US20070293049A1 (en) 2006-06-20 2007-12-20 Gaku Minamihaba Slurry for CMP of Cu film, polishing method and method for manufacturing semiconductor device
US20080026525A1 (en) 2006-07-26 2008-01-31 Micron Technology, Inc. Semiconductor processing method and chemical mechanical polishing methods
US20090209103A1 (en) 2006-02-03 2009-08-20 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20120094489A1 (en) * 2009-06-22 2012-04-19 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054422A (en) * 1999-02-19 2000-04-25 Ppt Research, Inc. Cutting and lubricating composition for use with a wire cutting apparatus
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
US20080203059A1 (en) * 2007-02-27 2008-08-28 Cabot Microelectronics Corporation Dilutable cmp composition containing a surfactant
US20090047787A1 (en) * 2007-07-31 2009-02-19 Yuzhuo Li Slurry containing multi-oxidizer and nano-abrasives for tungsten CMP
JP2009064881A (ja) * 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5472585B2 (ja) * 2008-05-22 2014-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030073386A1 (en) 2001-08-14 2003-04-17 Ying Ma Chemical mechanical polishing compositions for metal and associated materials and method of using same
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050191823A1 (en) 2004-02-27 2005-09-01 Chiyo Horikawa Polishing composition and polishing method
US20070157524A1 (en) 2004-04-03 2007-07-12 Wolfgang Lortz Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer
US20090209103A1 (en) 2006-02-03 2009-08-20 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20070293049A1 (en) 2006-06-20 2007-12-20 Gaku Minamihaba Slurry for CMP of Cu film, polishing method and method for manufacturing semiconductor device
US20080026525A1 (en) 2006-07-26 2008-01-31 Micron Technology, Inc. Semiconductor processing method and chemical mechanical polishing methods
US20120094489A1 (en) * 2009-06-22 2012-04-19 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates

Also Published As

Publication number Publication date
WO2015120269A1 (en) 2015-08-13
JP2017510977A (ja) 2017-04-13
EP3103133A1 (en) 2016-12-14
KR20170128063A (ko) 2017-11-22
JP6538701B2 (ja) 2019-07-03
EP3103133A4 (en) 2017-10-04

Similar Documents

Publication Publication Date Title
TWI596203B (zh) 用於抑制氮化鈦及鈦／氮化鈦移除之化學機械拋光（ｃｍｐ）方法
KR102307254B1 (ko) 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
KR102165009B1 (ko) Gst cmp 슬러리
TWI687496B (zh) ＴｉＮ-ＳｉＮ ＣＭＰ應用之高選擇性的氮化物抑制劑
TWI546372B (zh) 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法
JP6810029B2 (ja) 腐食抑制剤及び関連組成物並びに方法
JP6082097B2 (ja) 酸化物および窒化物に選択的な高除去速度および低欠陥のｃｍｐ組成物
CN100341966C (zh) 用于半导体晶片的抛光组合物
JP5264750B2 (ja) 銅／ルテニウム／タンタル基板のｃｍｐ
TWI463003B (zh) 拋光鋁半導體基材之組合物及方法
TWI361831B (en) Onium-containing cmp compositions and methods of use thereof
TWI602909B (zh) 穩定、可濃縮、無水溶性纖維素之化學機械研磨組成物
CN101437919A (zh) 含铜基底的化学机械抛光方法
KR20170097090A (ko) Sti 웨이퍼 연마에서 감소된 디싱을 나타내는 cmp 조성물
JP2009530849A (ja) ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法
JP6930976B2 (ja) 低ｋ基板の研磨方法
CN103298903B (zh) 金属钝化的化学机械抛光组合物及方法
KR20170012415A (ko) 높은 제거 속도 및 낮은 결함성을 갖는, 폴리실리콘 및 질화물에 비해 산화물에 대해 선택적인 cmp 조성물
CN106062931A (zh) 用于抑制氮化钛及钛/氮化钛移除的化学机械抛光方法
WO2025111136A1 (en) Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) Biocides for chemical mechanical planarization (cmp) polishing compositions
CN103773244A (zh) 一种碱性化学机械抛光液

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000