US20050191823A1 - Polishing composition and polishing method - Google Patents

Polishing composition and polishing method Download PDF

Info

Publication number
US20050191823A1
US20050191823A1 US11065238 US6523805A US2005191823A1 US 20050191823 A1 US20050191823 A1 US 20050191823A1 US 11065238 US11065238 US 11065238 US 6523805 A US6523805 A US 6523805A US 2005191823 A1 US2005191823 A1 US 2005191823A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
polishing composition
polishing
ex
fumed
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11065238
Inventor
Chiyo Horikawa
Koji Ohno
Kazusei Tamai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Abstract

A polishing composition includes more than 0.1% by mass of colloidal silica, and water, and has a pH of 6 or less. The polishing composition has the ability to polish a titanium material at a high stock removal rate. Thus, the polishing composition is suitable for use in applications for polishing a titanium-containing object.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to a polishing composition used, for example, in polishing for forming conductor wiring for a semiconductor device, and to a polishing method using such a polishing composition.
  • Currently, a damascene process wherein a chemical mechanical polishing (CMP) technology is used has become the main method for forming conductor wiring for a semiconductor device. When the conductor wiring is formed, first of all, a trench is formed on an insulator layer provided on a semiconductor substrate, and then a barrier layer comprising titanium or titanium nitride is formed on the insulator layer. Subsequently, a conductor layer is formed on the barrier layer such that at least the trench is filled with the conductor layer, and then a portion of the conductor layer and a portion of the barrier layer, each of which is positioned outside the trench, are removed by chemical mechanical polishing, whereby a portion of the conductor layer, which is left on the insulator layer, positioned inside the trench functions as the conductor wiring.
  • Japanese National Phase Laid-Open Patent Publication No. 2000-501771, Japanese Laid-Open Patent Publication Nos. 10-67986, 10-265766 and 11-116948 disclose a conventional polishing composition used in polishing for removing a portion of a conductor layer and a portion of a barrier layer, each of which is positioned outside a trench. However, conventional polishing compositions do not have the ability to polish a barrier layer comprising titanium at a high stock removal rate. Furthermore, conventional polishing compositions have the problem of reduction in safety due to the addition of fluoride and the problem of metallic contamination of the semiconductor device due to the addition of a metallic catalyst.
  • The polishing for removing the portion of the conductor layer and the portion of the barrier layer, each of which is positioned outside the trench, may be carried out with two or more types of polishing compositions. More specifically, polishing compositions different from each other may be used in the steps of: removing a part of the portion of the conductor layer positioned outside the trench in order to expose the upper surface of the barrier layer, and removing the residual of the portion of the conductor layer positioned outside the trench and the portion of the barrier layer positioned outside the trench in order to expose the upper surface of an insulator layer. However, the above method requires a lot of work to provide the two or more types of polishing compositions, and a lot of work to replace the polishing compositions, whereby working efficiency is decreased.
  • SUMMARY OF THE INVENTION
  • Accordingly, an object of the present invention is to provide a polishing composition having the ability to polish a titanium material at a high stock removal rate, and to provide a polishing method using such a polishing composition.
  • To achieve the foregoing and other objectives and in accordance with the purpose of the present invention, a polishing composition is provided. The polishing composition, for use in an application for polishing a titanium-containing object, includes more than 0.1% by mass of colloidal silica, and water, and has a pH of 6 or less.
  • The present invention also provides a polishing method. The method includes preparing the above polishing composition and polishing a titanium-containing object, by using the prepared polishing composition.
  • Other aspects and advantages of the invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawings in which:
  • Each of FIGS. 1 and 2 is a cross-sectional view for illustrating a polishing method according to one embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • One embodiment of the present invention will now be described with reference to FIGS. 1 and 2.
  • First of all, a method for forming conductor wiring 15 (see FIG. 2) on a semiconductor device will be described. When the conductor wiring 15 of a semiconductor device is formed, as shown in FIG. 1, first a barrier layer 13 and a conductor layer 14 are formed on an insulator layer 11 having a trench 12. The insulator layer 11 may be any one of a SiO2 film such as a TEOS film, a BSG film, a PSG film, and a BPSG film; a SiOF film; and a SiOC film. The trench 12 is formed, for example, according to a lithography technology and a pattern etching technology, which are publicly known, such that a predetermined design pattern can be provided.
  • The barrier layer 13 is formed on the insulator layer 11 such that the surface of the insulator layer 11 is covered with the barrier layer 13, prior to forming the conductor layer 14. The barrier layer 13 is formed, for example, according to a PVD method or a CVD method. The barrier layer 13 is formed from a titanium compound such as titanium nitride, titanium, or a titanium alloy. The barrier layer 13 may be, for example, a single-layer structure comprising a titanium layer or a titanium nitride layer, or a two-layer structure comprising a titanium layer and a titanium nitride-layer, or a three-layer structure comprising two titanium layers and a titanium nitride layer interposed between the two titanium layers. The thickness of the barrier layer 13 is preferably sufficiently thin as compared to the depth of the trench 12.
  • The conductor layer 14 is formed on the barrier layer 13 such that at least the trench 12 is filled with the conductor layer 14. The conductor layer 14 is formed, for example, according to a PVD method, a CVD method, or a metalizing plating method. The conductor layer 14 is formed from a conductive metal such as tungsten, copper, aluminum, ruthenium, platinum, gold, hafnium, cobalt, and nickel. The conductor layer 14 is preferably formed from tungsten, copper or aluminum, since such a metal is high in electrical conductivity.
  • Subsequently, a portion of the conductor layer 14 and a portion of the barrier layer 13, each of which is positioned outside the trench 12, are removed by chemical mechanical polishing. Consequently, as shown in FIG. 2, the other portion of the barrier layer 13 and the other portion of the conductor layer 14, each of which is positioned inside the trench 12, are left on the insulator layer 11. The portion of the conductor layer 14 positioned inside the trench 12 functions as the conductor wiring 15. The portion of the barrier layer 13 positioned inside the trench 12 serves to prevent the diffusion of metal atoms in the conductor wiring 15 into the insulator layer 11.
  • The chemical mechanical polishing for removing the portion of the barrier layer 13 and the portion of the conductor layer 14, each of which is positioned outside the trench 12, is carried out at the first to third polishing steps. In the first polishing step, a part of the portion of the conductor layer 14 positioned outside the trench 12 is removed by chemical mechanical polishing. The polishing in the first polishing step is completed before the barrier layer 13 is exposed. In the subsequent second polishing step, another part of the portion of the conductor layer 14 positioned outside the trench 12 is removed by chemical mechanical polishing such that the upper surface of the barrier layer 13 is exposed. In the subsequent third polishing step, the residual part of the portion of the conductor layer 14 positioned outside the trench 12, and the portion of the barrier layer 13 positioned outside the trench 12 are removed by chemical mechanical polishing such that the upper surface of the insulator layer 11 is exposed.
  • A polishing composition according to the present embodiment can be used in any of the first to third steps. Particularly in the third step, the polishing composition is preferably used. The polishing composition includes colloidal silica, an oxidizing agent, and water.
  • Colloidal silica in the polishing composition has an action for mechanically polishing an object, in particular, an action for rapidly polishing a titanium material. Colloidal silica synthesized by a sol-gel process includes impurity elements in a very small amount, and thus colloidal silica to be contained in the polishing composition is preferably synthesized by a sol-gel process. The synthesis of colloidal silica according to a sol-gel process comprises dripping methyl silicate into a solvent comprising methanol, ammonia and water so as to hydrolyze the methyl silicate. When it is not strictly necessary to consider contamination by impurity elements, colloidal silica to be contained in the polishing composition may be synthesized by an ion-exchange method. When colloidal silica is synthesized by an ion-exchange method, sodium silicate is used as a starting material.
  • From the viewpoint of enhancing the ability of the polishing composition to polish a titanium material, the average particle size of colloidal silica is preferably 1 nm or more, and more preferably 5 nm or more. On the other hand, from the viewpoint of suppressing the occurrence of a phenomenon referred to as “erosion” by which the level of the upper surface of an area in which a trench 12 is thickly formed is lowered, the average particle size of colloidal silica is preferably 25 nm or less, and more preferably 20 nm or less. It is because the ability of the polishing composition to polish the insulator layer 11 is moderately decreased that the occurrence of erosion is suppressed when the average particle size of colloidal silica is 25 nm or less, or 20 nm or less. The average particle size of colloidal silica can be determined by a specific surface area of the colloidal silica, as measured by a BET method, and a particle density of the colloidal silica.
  • It is necessary that the content of colloidal silica in the polishing composition be more than 0.1% by mass in order that the polishing composition can have the ability to polish a titanium material at a high stock removal rate. From the viewpoint of enhancing the ability of the polishing composition to polish a titanium material, the content of colloidal silica in the polishing composition is preferably 0.2% by mass or more, more preferably 0.25% by mass or more, and most preferably 0.35% by mass or more. On the other hand, from the viewpoint of enhancing the dispersion stability of the polishing composition and suppressing the aggregation of colloidal silica, the content of colloidal silica in the polishing composition is preferably 1.0% by mass or less, more preferably 0.75% by mass or less, and most preferably 0.65% by mass or less.
  • The oxidizing agent in the polishing composition has the action of oxidizing the conductive metal so as to promote the mechanical polishing of a conductive metal by using colloidal silica. Since periodic acid includes no impurity metal, an oxidizing agent to be contained in the polishing composition is preferably periodic acid. The periodic acid has the action of strongly promoting the mechanical polishing of a tungsten, ruthenium, platinum, and hafnium material. The periodic acid may be any one of orthoperiodic acid (H51O6), metaperiodic acid (HIO4), di-mesoperiodic acid (H4I2O9), mesoperiodic acid (H3IO5), and di-orthoperiodic acid (H8I2O11). Preferably, the periodic acid is orthoperiodic acid, because it is stable in composition, and easily available.
  • From the viewpoint of enhancing the ability of the polishing composition to polish a conductive metal, the content of an oxidizing agent in the polishing composition is preferably 0.5% by mass or more, and more preferably 1.0% by mass or more. On the other hand, from the viewpoint of suppressing the occurrence of erosion, the content of an oxidizing agent in the polishing composition is preferably 3.0% by mass or less, and more preferably 2.0% by mass or less. It is because the ability of the polishing composition to polish the conductor layer 14 and the insulator layer 11 is moderately decreased that the occurrence of erosion is suppressed when the content of the oxidizing agent is 3.0% by mass or less, or 2.0% by mass or less.
  • Water in the polishing composition acts as a medium for dispersing or dissolving components in the polishing composition, except water. Water to be included in the polishing composition should include minimal impurities, and thus it is preferably pure water, extra pure water, or distilled water.
  • The polishing composition of the present embodiment is prepared by mixing colloidal silica and an oxidizing agent with water. The mixing may be carried out by using a wing-type stirring machine or an ultrasonic dispersion-mixer.
  • To the polishing composition of the present embodiment, fumed oxide-particles may be added. When the fumed oxide-particles are added to the polishing composition, the ability of the polishing composition to polish a conductive metal is enhanced. The fumed oxide-particles have the action of mechanically polishing an object, in particular, the action of rapidly polishing a conductive metal.
  • The fumed oxide-particles can be synthesized by vapor-phase hydrolysis of chloride in oxyhydrogen flame. The fumed oxide-particles include an impurity metal merely in a relatively small amount, and have a chain structure wherein several to dozens of the particles are three-dimensionally aggregated.
  • The fumed metal oxide-particle to be added to the polishing composition may be any of fumed silica, fumed alumina, fumed titania, and fumed zirconia. Among them, fumed silica and fumed alumina are particularly high in the ability to polish a conductive metal. In particular, fumed silica is excellent in stability when it coexists with colloidal silica. Therefore, the fumed oxide-particles to be added to the polishing composition are preferably fumed silica or fumed alumina, and more preferably fumed silica.
  • From the viewpoint of enhancing the ability of the polishing composition to polish a conductive metal, the average particle size of the fumed oxide-particles to be added to the polishing composition is preferably 15 nm or more, and more preferably 21 nm or more. On the other hand, from the viewpoint of suppressing the occurrence of erosion, the average particle size of the fumed oxide-particles to be added to the polishing composition is preferably 45 nm or less, and more preferably 39 nm or less. It is because the ability of the polishing composition to polish the insulator layer 11 is moderately decreased that the occurrence of erosion is suppressed when the average particle size of the fumed oxide-particles to be added to the polishing composition is 45 nm or less, or 39 nm or less. The average particle size of the fumed oxide-particles can be determined by a specific surface area of the colloidal silica, as measured by a BET method, and a-particle density of the colloidal silica in a manner similar to the case of the average particle size of colloidal silica.
  • From the viewpoint of enhancing the ability of the polishing composition to polish a conductive metal, the content of fumed oxide-particles in the polishing composition to which the fumed oxide-particles are added is preferably 0.5% by mass or more, more preferably 2.5% by mass or more, and most preferably 3.5% by mass or more. On the other hand, from the viewpoints of enhancing the dispersion stability of the polishing composition and suppressing the aggregation of the fumed oxide-particles, the content of the fumed oxide-particles in the polishing composition to which the fumed oxide-particles are added is preferably 10% by mass or less, more preferably 7.5% by mass or less, and most preferably 6.5% by mass or less.
  • When the fumed oxide-particles are added to the polishing composition, the ratio of weight of the fumed oxide-particles in the polishing composition to the total weight of the colloidal silica and the fumed oxide-particles in the polishing composition is preferably in the range of 77 to 97%, and more preferably 84 to 95%. When the ratio is set in the range above, both the ability of the polishing composition to polish a titanium material and the ability of the polishing composition to polish a conductive metal are particularly remarkably enhanced.
  • To the polishing composition of the present embodiment, a polishing aid that serves to promote the action of the oxidizing agent may be added. The polishing aid to be added to the polishing composition is preferably a metal salt having oxidative power, or ammonium nitrate. Ammonium nitrate has the advantage of having moderate oxidative power and including no impurity metals.
  • From the viewpoint of strongly promoting the action of the oxidizing agent, the content of the polishing aid in the polishing composition to which the polishing aid is added is preferably 0.25% by mass or more, and more preferably 0.35% by mass or more. On the other hand, from the viewpoint of inhibiting corrosion by the polishing composition, of an object to be polished, the content of the polishing aid in the polishing composition to which the polishing aid is added is preferably 1.25% by mass or less, more preferably 0.75% by mass or less, and most preferably 0.65% by mass or less.
  • It is absolutely necessary that the pH of the polishing composition of the present embodiment be 6 or less in order that the polishing composition can have the ability to polish a titanium material at a high stock removal rate. From the viewpoint of enhancing the dispersion stability of the polishing composition and suppressing the aggregation of colloidal silica, the pH of the polishing composition is preferably 4.5 or less, and more preferably 3.0 or less. On the other hand, from the viewpoint of suppressing the occurrence of erosion, enhancing ease in handle the polishing composition, and preventing equipment used at the time of polishing from corrosion, the pH of the polishing composition is preferably 1.1 or more, and more preferably 2.0 or more.
  • In order to adjust the pH of the polishing composition to a desirable value, a pH adjuster may be added to the polishing composition of the present embodiment. As the pH adjuster to be added to the polishing composition, a basic compound containing no metallic impurities is preferred, and specifically ammonia, an ammonium salt, amine, a quaternary ammonium salt, or quaternary ammonium hydroxide can be enumerated. Among them, in particular, quaternary ammonium hydroxide such as tetramethylammonium hydroxide is preferred because of its ease in handling.
  • To the polishing composition of the present embodiment, a corrosion inhibitor may be added. When the corrosion inhibitor was added to the polishing composition, corrosion of the conductor layer 14 by the polishing composition is inhibited. As the corrosion inhibitor to be added to the polishing composition, benzotriazole or its derivatives are preferred. Benzotriazole and its derivatives have the advantage of showing a strong anticorrosive action even in a small amount, as well as containing no metal element impurities.
  • From the viewpoint of strongly inhibiting corrosion of the conductor layer 14 by the polishing composition, the content of the corrosion inhibitor in the polishing composition to which the corrosion inhibitor is added is preferably 0.001% by mass or more, and more preferably 0.003% by mass or more. On the other hand, from the viewpoint of suppressing reduction in the ability of the polishing composition to polish a conductive metal, the content of the corrosion inhibitor in the polishing composition to which the corrosion inhibitor is added is preferably 0.2% by mass or less, and more preferably 0.12% by mass or less.
  • To the polishing composition of the present embodiment, a surface active agent may be added. When the surface active agent was added to the polishing composition, the occurrence of a phenomenon referred to as “dishing” is suppressed, wherein the level of the top surface of the conductor wiring 15 is lowered. As the surface active agent to be added to the polishing composition, an anionic surface-active agent or a nonionic surface-active agent is preferred. Specifically, the anionic surface-active agents include a carboxylate such as soap, a N-acylamino acid salt, polyoxyethylene alkyl ether carboxylate, polyoxypropylene alkyl ether carboxylate, and an acylated peptide; a sulfonate such as alkyl sulfonate, alkylbenzene sulfonate, alkylnaphthalene sulfonate, naphthalene sulfonate, sulfosuccinate, α-olefin sulfonate, and N-acyl sulfonate; a sulfuric ester such as sulfated oil, alkyl sulfate, alkyl ether sulfate, polyoxyethylene alkylallyl ether sulfate, polyoxypropylene alkylallyl ether sulfate, and alkylamide sulfate; and a phosphoric ester such as alkyl phosphate, polyoxyethylene alkylallyl ether phosphate, and polyoxypropylene alkylallyl ether phosphate. Specifically, the nonionic surface-active agents include an ether type such as polyoxyethylene alkylphenyl ether, alkyl phenyl ether, alkylallyl formaldehyde-condensed polyoxyethylene ether, polyoxyethylene-polyoxypropylene block polymer, and polyoxyethylene-polyoxypropylene alkyl ether; an ether-ester type such as polyoxyethylene ether of glycerin ester, polyoxyethylene ether of sorbitan ester, and polyoxyethylene ether of sorbitol ester; and an ester type such as poly(ethylene glycol) fatty acid ester, glycerin ester, polyglycerin ester, sorbitan ester, propylene glycol ester, sucrose ester, methoxy acetate, ethoxy acetate, 3-ethoxy propionate, and alanine ethyl ester. The nonionic surface-active agents may be an ether such as poly(ethylene glycol), poly(propylene glycol), poly(tetramethylene glycol), poly(ethylene glycol) alkyl ether, poly(ethylene glycol) alkenyl ether, alkyl poly(ethylene glycol), alkyl poly(ethylene glycol) alkyl ether, alkyl poly(ethylene glycol) alkenyl ether, alkenyl poly(ethylene glycol), alkenyl poly(ethylene glycol) alkyl ether, alkenyl poly(ethylene glycol) alkenyl ether, poly(propylene glycol) alkyl ether, poly(propylene glycol) alkenyl ether, alkyl poly(propylene glycol), alkyl poly(propylene glycol) alkyl ether, alkyl poly(propylene glycol) alkenyl ether, alkenyl poly(propylene glycol), alkenyl poly(propylene glycol) alkyl ether, and alkenyl poly(propylene glycol) alkenyl ether; a polycarboxylic acid or a salt thereof, such as poly(aspartic acid), poly(glutamic acid), polylysine, poly(malic acid), poly(methacrylic acid), poly(ammonium methacrylate), poly(sodium methacrylate), polyamide acid, poly(maleic acid), poly(itaconic acid), poly(fumaric acid), poly(p-styrene carboxylic acid), poly(acrylic acid), polyacrylamide, amino-polyacrylamide, poly(ammonium acrylate), poly(sodium acrylate), poly(amide acid), a poly(amide acid) ammonium salt, a poly(amide acid) sodium salt, and polyglyoxylic acid; a vinyl polymer such as poly(vinyl alcohol), poly(vinylpyrrolidone), and polyacrolein; or sulfonic acid or a salt thereof, such as ammonium methyl taurate, sodium methyl taurate, sodium methyl sulfate, ammonium ethyl sulfate, ammonium butyl sulfate, sodium vinyl sulfonate, sodium 1-allyl sulfonate, sodium 2 -allyl sulfonate, sodium methoxymethyl sulfonate, ammonium ethoxymethyl sulfonate, sodium 3-ethoxypropyl sulfonate, and sodium sulfosuccinate. Among them, polycarboxylic acid and an ammonium salt thereof are preferred, because of their strong action for suppressing the occurrence of dishing.
  • To the polishing composition of the present embodiment, an organic solvent may be added. The organic solvent acts as a medium for dispersing or dissolving a component(s) in the polishing composition, in particular a component(s) which is low in water solubility and water dispersibility. As the organic solvents to be added to the polishing composition, for example, alcohols such as methanol and isopropanol, glycols such as ethylene glycol, and propylene glycol can be enumerated. The content of the organic solvent in the polishing composition to which the organic solvent is added is preferably 0.5% by mass or less.
  • In the polishing composition of the present embodiment, the concentration (mass fraction) of each of elements belonging to the group 2 to the group 12 of the periodic table, and aluminum, gallium, indium, thallium, tin, lead, and bismuth (among them, in particular, the concentration (mass fraction) of each of copper, iron, nickel, chromium, and manganese) is preferably 100 ppb or less, and more preferably 50 ppb or less. The notation of the group numbers above is based upon IUPAC nomenclature for inorganic chemicals (revised edition) (1989). The above concentration can be determined, for example, by using an inductively coupled plasma mass spectrometer (ICP-MS), an inductively coupled plasma atomic emission spectrometer (ICP-AES), an atomic absorption spectrometer, or a total reflection X-ray fluorescence analyzer (TXRF).
  • When the polishing composition of the present embodiment is used for chemically and mechanically polishing the portion of the conductor layer 14 and the portion of the barrier layer 13, each of which is positioned outside a trench 12 (see FIG. 1), for removal of the portions, the surface of the conductor layer 14 is oxidized by the action of the oxidizing agent, whereby the surface of the conductor layer 14 is embrittled, and the embrittled surface of the conductor layer 14 is polished and removed by the action of colloidal silica. Thus the polishing composition of the present embodiment has the ability to polish the conductor layer 14 at a high stock removal rate. When the conductor layer 14 is formed from tungsten, tungsten on the surface portion of the conductor layer 14 is oxidized into tungsten trioxide, whereby the surface of the conductor layer 14 is embrittled. Furthermore, the polishing composition of the present embodiment includes more than 0.1% by mass of colloidal silica which has the action of rapidly polishing titanium material. Thus, when the barrier layer 13 is formed from titanium, the polishing composition of the present embodiment has also the ability to polish the barrier layer 13 at a high stock removal rate.
  • Thus the polishing composition of the present embodiment has the ability to polish both of the barrier layer 13 and the conductor layer 14 at a high stock removal rate. Therefore, the polishing for removing the portion of the conductor layer 14 and the portion of the barrier layer 13, each of which is positioned outside the trench 12, may be carried out by using only the polishing composition of the present embodiment without using two or more types of polishing compositions. When the polishing for removing the portion of the conductor layer 14 and the portion of the barrier layer 13, each of which is positioned outside the trench 12, was carried out by using only the polishing composition of the present embodiment, working efficiency will be enhanced, because a lot of work to provide the two or more types of polishing compositions or a lot of work to replace the polishing compositions is not required.
  • The present invention may be embodied in the following forms.
  • The polishing composition of the above embodiment may be used in applications for polishing an object formed from titanium, such as a titanium target material for spattering, a titanium material for vapor deposition, or a titanium dummy wafer for a semiconductor. When the object to be polished is formed from titanium, a polishing composition in accordance with the embodiment may not necessarily include an oxidizing agent.
  • The polishing composition may be prepared by diluting an undiluted polishing composition. This case is advantageous, because the polishing composition can be preserved and transported in the form of the undiluted polishing composition with less volume than the polishing composition.
  • The polishing composition may be prepared by mixing an oxidizing agent with other components of the polishing composition than the oxidizing agent immediately before using the polishing composition. In this case, decomposition of the oxidizing agent during preservation will be inhibited.
  • To the polishing composition, an aqueous polymer, a chelating agent, an antiseptic agent and the like may be added.
  • Hereinafter, examples and comparative examples of the present invention will be described.
  • Each of fumed oxide-particles, colloidal silica, orthoperiodic acid (oxidizing agent), tetramethylammonium hydroxide (pH adjuster), ammonium nitrate (polishing aid), poly(acrylic acid) (surface active agent), and benzotriazole (corrosion inhibitor) were added to water according to need so as to prepare polishing compositions according to Examples 1 to 32 and Comparative Examples 1 to 5. Particulars about the components of each of the polishing compositions, and the pH of each of the polishing compositions are as shown in Table 1.
  • Under the following polishing conditions, each of a tungsten blanket-wafer, a titanium blanket-wafer, a titanium nitride blanket-wafer, and a silicon oxide (TEOS) blanket-wafer was polished by using each of the polishing compositions.
  • The thickness of each of the blanket wafers before and after polishing was determined by means of a sheet-resistance measuring apparatus “VR-120” manufactured by Kokusai Electric System Service Co., Ltd. Then the stock removal rate of each of the polishing compositions to each of the wafers was determined by dividing the thickness diminution, which is the difference in thickness between the wafer before polishing and the wafer after polishing, by polishing time. The results are shown in the column entitled “Stock removal rate for Tungsten”, the column entitled “Stock removal rate for Titanium”, the column entitled “Stock removal rate for Titanium Nitride”, and the column entitled “Stock removal rate for TEOS” of Table 2. Furthermore, the ratio of a stock removal rate for tungsten to a stock removal rate for titanium is shown in the column entitled “Tungsten/Titanium” of Table 2; the ratio of a stock removal rate for tungsten to a stock removal rate for titanium nitride is shown in the column entitled “Tungsten/Titanium Nitride” thereof; and the ratio of a stock removal rate for tungsten to a stock removal rate for TEOS is shown in the column entitled “Tungsten/TEOS” thereof.
  • <Polishing Conditions>
      • Polishing Machine: Single-sided CMP Polishing
      • Machine “Mirra” of Applied Materials Inc.
        • Polishing Pad: Polyurethane Laminated
      • Polishing Pad “IC-1400 k-groove” of Rodel Inc.
        • Polishing Pressure: 28 kPa (=approximately 4 psi)
        • Revolution Speed of Surface Table: 123 revolutions/nin.
        • Feed Speed of Polishing Composition: 125 ml/min.
        • Revolution Speed of Carrier: 121 revolutions/min.
  • Polishing Time: One minute
    TABLE 1
    Fumed Colloidal Silica Orthoperiodic Ammonium Benzotriazole
    oxide-particles [mass acid [mass Tetramethylammonium nitrate Poly(acrylic acid) [mass
    [mass percentage percentage percentage hydroxide [mass percentage [mass percentage percentage
    in polishing in polishing in polishing [mass percentage in in polishing in polishing in polishing
    composition] composition] composition] polishing composition] composition] composition] composition] pH
    Ex. 1  0.5*1 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 2  2.5*1 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 3  5*1 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 4  7.5*1 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 5 10*1 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 6  5*1 0.25*5 1.5 0.5 0.5 0.25 2.8
    Ex. 7  5*1 0.75*5 1.5 0.5 0.5 0.25 2.8
    Ex. 8  5*1 1.0*5 1.5 0.5 0.5 0.25 2.8
    Ex. 9  2*1 0.8*5 1.5 0.5 0.5 0.25 2.8
    Ex. 10  4*1 0.6*5 1.5 0.5 0.5 0.25 2.8
    Ex. 11  6*1 0.4*5 1.5 0.5 0.5 0.25 2.8
    Ex. 12  8*1 0.2*5 1.5 0.5 0.5 0.25 2.8
    Ex. 13  5*2 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 14  5*3 0.5*5 1.5 0.5 0.5 0.25 2.8
    Ex. 15  5*1 0.5*6 1.5 0.5 0.5 0.25 2.8
    Ex. 16  5*1 0.5*7 1.5 0.5 0.5 0.25 2.8
    Ex. 17  5*1 0.5*5 0.5 0.5 0.5 0.25 4.5
    Ex. 18  5*1 0.5*5 1.0 0.5 0.5 0.25 3.5
    Ex. 19  5*1 0.5*5 2.0 0.5 0.5 0.25 2.2
    Ex. 20  5*1 0.5*5 3.0 0.5 0.5 0.25 2.0
    Ex. 21  5*1 0.5*5 1.5 0.5 0.25 2.8
    Ex. 22  5*1 0.5*5 1.5 0.5 0.25 0.25 2.8
    Ex. 23  5*1 0.5*5 1.5 0.5 0.75 0.25 2.8
    Ex. 24  5*1 0.5*5 1.5 0.5 1.0 0.25 2.8
    Ex. 25  5*1 0.5*5 1.5 0.5 1.25 0.25 2.8
    Ex. 26  5*1 0.5*5 1.5 0.5 0.5 2.8
    Ex. 27  5*1 0.5*5 1.5 0.5 0.5 0.003 2.8
    Ex. 28  5*1 0.5*5 1.5 0.5 0.25 1.1
    Ex. 29  5*1 0.5*5 1.5 0.25 0.5 0.25 1.5
    Ex. 30  5*1 0.5*5 1.5 0.75 0.5 0.25 4.5
    Ex. 31 0.5*5 1.5 0.5 0.5 0.5 2.8
    Ex. 32  5*4 0.5*5 1.5 0.5 0.5 0.5 2.8
    C. Ex. 1 1.5 0.5 0.5 0.5 2.8
    C. Ex. 2  5*1 1.5 0.5 0.5 0.5 2.8
    C. Ex. 3 10*4 1.5 0.5 0.5 0.5 2.8
    C. Ex. 4  5*1 0.1*5 1.5 0.5 0.5 0.25 2.8
    C. Ex. 5  5*1 0.5*5 0.5 0.5 0.5 10.5

    *1Fumed silica having an average particle size of 30 nm

    *2Fumed silica having an average particle size of 55 nm

    *3Fumed silica having an average particle size of 20 nm

    *4Fumed silica having an average particle size of 30 nm

    *5Colloidal silica having an average particle size of 10 nm

    *6Colloidal silica having an average particle size of 20 nm

    *7Colloidal silica having an average particle size of 35 nm
  • TABLE 2
    Stock removal Stock removal Stock removal Stock
    rate for rate for rate for removal rate
    Tungsten Titanium Titanium Nitride for TEOS Tungsten/Titanium
    [nm/min] [nm/min] [nm/min] [nm/min] Tungsten/Titanium Nitride Tungsten/TEOS
    Ex. 1 230 50 160 2 4.6 1.4 115.0
    Ex. 2 300 83 280 5 3.6 1.1 60.0
    Ex. 3 380 85 370 10 4.5 1.0 38.0
    Ex. 4 400 85 400 11 4.7 1.0 36.4
    Ex. 5 420 85 420 12 4.9 1.0 35.0
    Ex. 6 380 45 370 10 8.4 1.0 38.0
    Ex. 7 380 85 370 10 4.5 1.0 38.0
    Ex. 8 380 85 370 10 4.5 1.0 38.0
    Ex. 9 270 90 240 5 3.0 1.1 54.0
    Ex. 10 360 87 340 9 4.1 1.1 40.0
    Ex. 11 390 80 375 11 4.9 1.0 35.5
    Ex. 12 410 40 390 12 10.3 1.1 34.2
    Ex. 13 410 85 400 12 4.8 1.0 34.2
    Ex. 14 360 85 360 9 4.2 1.0 40.0
    Ex. 15 380 60 370 10 6.3 1.0 38.0
    Ex. 16 380 40 370 10 9.5 1.0 38.0
    Ex. 17 100 75 370 10 1.3 0.3 10.0
    Ex. 18 250 82 370 10 3.0 0.7 25.0
    Ex. 19 400 85 370 10 4.7 1.1 40.0
    Ex. 20 440 85 370 10 5.2 1.2 44.0
    Ex. 21 300 85 370 10 3.5 0.8 30.0
    Ex. 22 360 85 370 10 4.2 1.0 36.0
    Ex. 23 400 85 370 10 4.7 1.1 40.0
    Ex. 24 400 85 370 10 4.7 1.1 40.0
    Ex. 25 390 85 370 10 4.6 1.1 39.0
    Ex. 26 400 85 370 10 4.7 1.1 40.0
    Ex. 27 400 85 370 10 4.7 1.1 40.0
    Ex. 28 410 88 370 10 4.7 1.1 41.0
    Ex. 29 390 85 370 10 4.6 1.1 39.0
    Ex. 30 300 83 370 10 3.6 0.8 30.0
    Ex. 31 150 50 100 2 3.0 1.5 75.0
    Ex. 32 350 30 350 10 11.7 1.0 35.0
    C. Ex. 1 50 2 100 2 25.0 0.5 25.0
    C. Ex. 2 380 10 370 10 38.0 1.0 38.0
    C. Ex. 3 430 10 380 10 43.0 1.1 43.0
    C. Ex. 4 380 14 370 10 27.1 1.0 38.0
    C. Ex. 5 10 15 370 40 0.7 0.0 0.3
  • As shown in Table 2, in Comparative Examples 1 to 5, all of the stock removal rates for a titanium blanket-wafer are no greater than 15 nm/min. and most are less. From this result, it can be concluded that none of the polishing compositions according to Comparative Examples 1 to 5 have the ability to polish a titanium material at a high stock removal rate. The reason why the polishing compositions according to Comparative Examples 1 to 3 had a low stock removal rate when polishing the titanium blanket-wafer is believed to be that the polishing compositions according to Comparative Examples 1 to 3 included no colloidal silica. The reason why the polishing composition according to Comparative Example 4 had a low stock removal rate when polishing the titanium blanket-wafer is believed to be that the content of colloidal silica in the polishing composition in Comparative Example 4 was as low as 0.1% by mass (i.e., 0.1% by mass or less). The reason why the polishing composition according to Comparative Example 5 had a low stock removal rate when polishing the titanium blanket-wafer is believed to be that pH of the polishing composition according to Comparative Example 5 is 10.5, i.e., greater than 6.
  • In contrast, in Examples 1 to 32, all of the stock removal rates for a titanium blanket-wafer are as high as 30 nm/min. or more. From this result, it can be concluded that all of the polishing compositions according to Examples 1 to 32 have the ability to polish a titanium material at a high stock removal rate. Furthermore, from the results of Example 31 and Comparative Example 1, it can be concluded that the ability of a polishing composition to polish a tungsten material is enhanced by adding fumed silica to the polishing composition.
  • From the results of Examples 1 to 5, it can be concluded that the content of fumed silica is preferably 2.5% by mass or more in order to enhance the ability of the polishing composition to polish a titanium material while the content of fumed silica is preferably 4.0% by mass or more in order to enhance the ability of the polishing composition to polish a tungsten material. From the results of Example 3 and 6 to 8, it can be concluded that the content of colloidal silica is preferably 0.5% by mass or more in order to enhance the ability of the polishing composition to polish a titanium material. From the results of Examples 14 to 16, it can be concluded that the average particle size of colloidal silica is preferably 20 nm rather than 10 nm, and more preferably 35 nm rather than 20 nm in order to enhance the ability of the polishing composition to polish a titanium material. From the results of Examples 17 to 20, it can be found that the content of periodic acid is preferably 1.0% by mass or more in order to enhance the ability of the polishing composition to polish a titanium material while the content of periodic acid is preferably 1.5% by mass or more in order to enhance the ability of the polishing composition to polish a tungsten material.

Claims (11)

  1. 1. A polishing composition for use in an application for polishing a titanium-containing object, the polishing composition comprising more than 0.1% by mass of colloidal silica, and water, and having a pH of 6 or less.
  2. 2. The polishing composition according to claim 1, wherein the average particle size of the colloidal silica is in a range from 1 to 25 nm.
  3. 3. The polishing composition according to claim 1, further comprising an oxidizing agent, wherein the object includes an insulator layer having a trench, a titanium barrier layer provided on the insulator layer, and a conductive metal conductor layer provided on the barrier layer, wherein each of the barrier layer and the conductor layer has a portion positioned inside the trench, and a portion positioned outside the trench.
  4. 4. The polishing composition according to claim 3, wherein the oxidizing agent is periodic acid.
  5. 5. The polishing composition according to claim 3, wherein the content of the oxidizing agent in the polishing composition is in a range from 0.5 to 3.0% by mass.
  6. 6. The polishing composition according to claim 1, further comprising fumed oxide-particles.
  7. 7. The polishing composition according to claim 6, wherein the fumed oxide-particles comprise fumed silica, fumed alumina, fumed titania, or fumed zirconia.
  8. 8. The polishing composition according to claim 6, wherein the average particle size of the fumed oxide-particles is in a range from 15 to 45 nm.
  9. 9. The polishing composition according to claim 6, wherein the content of the fumed oxide-particles in the polishing composition is in a range from 0.5 to 10% by mass.
  10. 10. The polishing composition according to claim 6, wherein the ratio of weight of the fumed oxide-particles in the polishing composition to the total weight of the colloidal silica and the fumed oxide-particles in the polishing composition is in a range from 77 to 97%.
  11. 11. A polishing method, comprising:
    preparing a polishing composition including more than 0.1% by mass of colloidal silica, and water, and having a pH of 6 or less; and
    polishing a titanium-containing object, by using the prepared polishing composition.
US11065238 2004-02-27 2005-02-24 Polishing composition and polishing method Abandoned US20050191823A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004055318A JP2005244123A (en) 2004-02-27 2004-02-27 Polishing composition
JP2004-055318 2004-02-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11969493 US8501027B2 (en) 2004-02-27 2008-01-04 Polishing composition and polishing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11969493 Continuation US8501027B2 (en) 2004-02-27 2008-01-04 Polishing composition and polishing method

Publications (1)

Publication Number Publication Date
US20050191823A1 true true US20050191823A1 (en) 2005-09-01

Family

ID=34747587

Family Applications (2)

Application Number Title Priority Date Filing Date
US11065238 Abandoned US20050191823A1 (en) 2004-02-27 2005-02-24 Polishing composition and polishing method
US11969493 Active 2028-11-04 US8501027B2 (en) 2004-02-27 2008-01-04 Polishing composition and polishing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11969493 Active 2028-11-04 US8501027B2 (en) 2004-02-27 2008-01-04 Polishing composition and polishing method

Country Status (5)

Country Link
US (2) US20050191823A1 (en)
EP (1) EP1568746B1 (en)
JP (1) JP2005244123A (en)
KR (1) KR20060043205A (en)
CN (1) CN1660951A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060189152A1 (en) * 2004-12-30 2006-08-24 Ki-Hoon Jang Slurry composition, method of polishing an object and method of forming a contact in a semiconductor device using the slurry composition
US20060191872A1 (en) * 2005-02-25 2006-08-31 Webb Richard J Method of polishing a wafer
US20080120918A1 (en) * 2006-11-27 2008-05-29 Fujimi Incorporated Polishing composition and polishing process
US20080153392A1 (en) * 2006-12-20 2008-06-26 3M Innovative Properties Company Chemical Mechanical Planarization Composition, System, and Method of Use
US20080203354A1 (en) * 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20080237535A1 (en) * 2007-03-19 2008-10-02 Speedfam Co., Ltd. Composition for polishing semiconductor wafer, and method of producing the same
US20080289261A1 (en) * 2006-11-27 2008-11-27 Fujimi Incorporated Polishing composition and polishing method
US20120145950A1 (en) * 2005-09-26 2012-06-14 Planar Solutions, Llc Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20120252214A1 (en) * 2008-03-27 2012-10-04 Fujifilm Corporation Polishing liquid and polishing method
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
US20170009101A1 (en) * 2014-02-26 2017-01-12 Fujimi Incorporated Polishing composition

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086462A (en) 2004-09-17 2006-03-30 Fujimi Inc Polishing composition and manufacturing method of wiring structure using the same
JP5412706B2 (en) * 2005-11-01 2014-02-12 日立化成株式会社 Abrasive and a polishing method for a copper film and the insulating material film
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP2008124222A (en) * 2006-11-10 2008-05-29 Fujifilm Corp Polishing solution
KR100811399B1 (en) * 2006-12-05 2008-03-07 주식회사 두림테크 Absorbing pad and manufacturing method thereof
JP5094112B2 (en) * 2006-12-28 2012-12-12 富士フイルム株式会社 Polishing liquid
JP5094139B2 (en) * 2007-01-23 2012-12-12 富士フイルム株式会社 Polishing liquid
JP5285866B2 (en) * 2007-03-26 2013-09-11 富士フイルム株式会社 Polishing liquid
JP5327427B2 (en) * 2007-06-19 2013-10-30 Jsr株式会社 The chemical mechanical polishing aqueous dispersion preparation set, method of preparing a chemical mechanical polishing aqueous dispersion, the chemical mechanical polishing aqueous dispersion and a chemical mechanical polishing method
CN101368070A (en) * 2007-08-15 2009-02-18 江苏海迅实业集团股份有限公司 Nano-silicon dioxide abrasive material polishing solution for processing crystallizing glass
JP5428205B2 (en) * 2008-06-04 2014-02-26 日立化成株式会社 Metal-polishing liquid
JP5544244B2 (en) 2010-08-09 2014-07-09 株式会社フジミインコーポレーテッド Polishing composition and polishing method
JP2013074036A (en) * 2011-09-27 2013-04-22 Toshiba Corp Slurry for cmp and method for manufacturing semiconductor device
JP6050934B2 (en) * 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド Method for producing a polishing method and a substrate using the composition and it polishing
CN106062931A (en) * 2015-02-06 2016-10-26 嘉柏微电子材料股份公司 Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
EP3103133A4 (en) * 2014-02-05 2017-10-04 Cabot Microelectronics Corporation Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
JP2016056292A (en) * 2014-09-10 2016-04-21 株式会社フジミインコーポレーテッド Polishing composition and production process therefor, polishing method, and substrate and production process therefor
US10124464B2 (en) * 2014-10-21 2018-11-13 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
US9834704B2 (en) * 2014-10-21 2017-12-05 Cabot Microelectronics Corporation Cobalt dishing control agents

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5516346A (en) * 1993-11-03 1996-05-14 Intel Corporation Slurries for chemical mechanical polishing
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5909820A (en) * 1997-12-02 1999-06-08 Yeh; Frank Beverage container with grooved lid
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US6136711A (en) * 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
US6340374B1 (en) * 1999-03-13 2002-01-22 Tokuyama Corporation Polishing slurry and polishing method
US6491837B1 (en) * 2000-01-18 2002-12-10 Praxair S.T. Technology, Inc. Polishing slurry
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20040009671A1 (en) * 1998-03-18 2004-01-15 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US20040157535A1 (en) * 2003-02-11 2004-08-12 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US20040192049A1 (en) * 2002-03-04 2004-09-30 Koji Ohno Polishing composition and method for forming wiring structure using the same
US6814766B2 (en) * 2001-08-09 2004-11-09 Fujimi Incorporated Polishing composition and polishing method employing it
US6849099B2 (en) * 2002-10-01 2005-02-01 Fujimi Incorporated Polishing composition
US20050178742A1 (en) * 2003-11-10 2005-08-18 Chelle Philippe H. Compositions and methods for rapidly removing overfilled substrates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585018B2 (en) 1987-09-08 1997-02-26 富山県 Piezoelectric pressure sensing element and a manufacturing method thereof
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
JP2000144109A (en) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd Polishing agent slurry for polishing chemical machinery
JP4105838B2 (en) * 1999-03-31 2008-06-25 株式会社トクヤマ Abrasive and polishing method
JP2001031953A (en) * 1999-07-19 2001-02-06 Tokuyama Corp Polishing agent for metallic film
US6328774B1 (en) * 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
KR100481651B1 (en) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 Slurry for chemical mechanical polishing and method for manufacturing semiconductor device
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
JP2003197573A (en) * 2001-12-26 2003-07-11 Ekc Technology Kk Colloidal silica for polishing surface wherein metal film and insulation film coexist
JP2003193038A (en) * 2001-12-28 2003-07-09 Nippon Aerosil Co Ltd Highly concentrated silica slurry
CN1653600A (en) * 2002-03-13 2005-08-10 Asm努突尔股份有限公司 Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers
JP4166487B2 (en) * 2002-03-04 2008-10-15 株式会社フジミインコーポレーテッド Method for forming a wiring structure using the composition and its polishing
US6645265B1 (en) * 2002-07-19 2003-11-11 Saint-Gobain Ceramics And Plastics, Inc. Polishing formulations for SiO2-based substrates
JP2004331852A (en) * 2003-05-09 2004-11-25 Tama Kagaku Kogyo Kk Abrasive slurry excellent in dispersion stability, and manufacturing method for substrate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5516346A (en) * 1993-11-03 1996-05-14 Intel Corporation Slurries for chemical mechanical polishing
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US6313039B1 (en) * 1996-07-25 2001-11-06 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6136711A (en) * 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5909820A (en) * 1997-12-02 1999-06-08 Yeh; Frank Beverage container with grooved lid
US20040009671A1 (en) * 1998-03-18 2004-01-15 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6340374B1 (en) * 1999-03-13 2002-01-22 Tokuyama Corporation Polishing slurry and polishing method
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6491837B1 (en) * 2000-01-18 2002-12-10 Praxair S.T. Technology, Inc. Polishing slurry
US6814766B2 (en) * 2001-08-09 2004-11-09 Fujimi Incorporated Polishing composition and polishing method employing it
US20040192049A1 (en) * 2002-03-04 2004-09-30 Koji Ohno Polishing composition and method for forming wiring structure using the same
US6849099B2 (en) * 2002-10-01 2005-02-01 Fujimi Incorporated Polishing composition
US20040157535A1 (en) * 2003-02-11 2004-08-12 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US20050178742A1 (en) * 2003-11-10 2005-08-18 Chelle Philippe H. Compositions and methods for rapidly removing overfilled substrates

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060189152A1 (en) * 2004-12-30 2006-08-24 Ki-Hoon Jang Slurry composition, method of polishing an object and method of forming a contact in a semiconductor device using the slurry composition
US20060191872A1 (en) * 2005-02-25 2006-08-31 Webb Richard J Method of polishing a wafer
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
US8779011B2 (en) * 2005-09-26 2014-07-15 Fujifilm Planar Solutions, LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20120145950A1 (en) * 2005-09-26 2012-06-14 Planar Solutions, Llc Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20080120918A1 (en) * 2006-11-27 2008-05-29 Fujimi Incorporated Polishing composition and polishing process
US20080289261A1 (en) * 2006-11-27 2008-11-27 Fujimi Incorporated Polishing composition and polishing method
US8591764B2 (en) 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US20080153392A1 (en) * 2006-12-20 2008-06-26 3M Innovative Properties Company Chemical Mechanical Planarization Composition, System, and Method of Use
US20080203354A1 (en) * 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
US8715524B2 (en) 2007-02-26 2014-05-06 Fujifilm Corporation Polishing liquid
US20080237535A1 (en) * 2007-03-19 2008-10-02 Speedfam Co., Ltd. Composition for polishing semiconductor wafer, and method of producing the same
US20120252214A1 (en) * 2008-03-27 2012-10-04 Fujifilm Corporation Polishing liquid and polishing method
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
US20170009101A1 (en) * 2014-02-26 2017-01-12 Fujimi Incorporated Polishing composition
US10059860B2 (en) * 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition

Also Published As

Publication number Publication date Type
CN1660951A (en) 2005-08-31 application
US8501027B2 (en) 2013-08-06 grant
US20080233836A1 (en) 2008-09-25 application
EP1568746A1 (en) 2005-08-31 application
JP2005244123A (en) 2005-09-08 application
KR20060043205A (en) 2006-05-15 application
EP1568746B1 (en) 2012-01-18 grant

Similar Documents

Publication Publication Date Title
US6593239B2 (en) Chemical mechanical polishing method useful for copper substrates
US6620037B2 (en) Chemical mechanical polishing slurry useful for copper substrates
US6533832B2 (en) Chemical mechanical polishing slurry and method for using same
US6692546B2 (en) Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6565619B1 (en) Polishing composition and polishing method employing it
US6136711A (en) Polishing composition including an inhibitor of tungsten etching
US5980775A (en) Composition and slurry useful for metal CMP
US20040134873A1 (en) Abrasive-free chemical mechanical polishing composition and polishing process containing same
US6468913B1 (en) Ready-to-use stable chemical-mechanical polishing slurries
US20070181534A1 (en) Barrier polishing liquid and chemical mechanical polishing method
US20030051413A1 (en) Polishing composition and polishing method employing it
US7029373B2 (en) Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6705926B2 (en) Boron-containing polishing system and method
US20050079718A1 (en) Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20050079803A1 (en) Chemical-mechanical planarization composition having PVNO and associated method for use
US6117783A (en) Chemical mechanical polishing composition and process
US6362104B1 (en) Method for polishing a substrate using a CMP slurry
US20060186089A1 (en) Chemical mechanical polishing method
US20050050803A1 (en) Polishing fluid and polishing method
US20040108302A1 (en) Passivative chemical mechanical polishing composition for copper film planarization
US20030181345A1 (en) Tantalum barrier removal solution
US20020019128A1 (en) Slurry for chemical mechanical polishing of metal layer, method of preparing the slurry, and metallization method using the slurry
US20020061635A1 (en) Solution for chemical mechanical polishing and method of manufacturing copper metal interconnection layer using the same
US20090057661A1 (en) Method for Chemical Mechanical Planarization of Chalcogenide Materials
US20030104770A1 (en) Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers

Legal Events

Date Code Title Description
AS Assignment

Owner name: FUJIMI INCORPORATED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HORIKAWA, CHIYO;OHNO, KOJI;TAMAI, KAZUSEI;REEL/FRAME:016545/0466

Effective date: 20050419

AS Assignment

Owner name: FUJIMI INCORPORATED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HORIKAWA, CHIYO;OHNO, KOJI;TAMAI, KAZUSEI;REEL/FRAME:017043/0451;SIGNING DATES FROM 20050412 TO 20050419