JP6538701B2 - 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法 - Google Patents

窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法 Download PDF

Info

Publication number
JP6538701B2
JP6538701B2 JP2016550260A JP2016550260A JP6538701B2 JP 6538701 B2 JP6538701 B2 JP 6538701B2 JP 2016550260 A JP2016550260 A JP 2016550260A JP 2016550260 A JP2016550260 A JP 2016550260A JP 6538701 B2 JP6538701 B2 JP 6538701B2
Authority
JP
Japan
Prior art keywords
surfactant
cmp
tin
polishing
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016550260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017510977A (ja
JP2017510977A5 (https=
Inventor
ホウ ホゥイ−ファン
ホウ ホゥイ−ファン
ワード ウィリアム
ワード ウィリアム
イエー ミーン−チー
イエー ミーン−チー
ツァイ チー−ピン
ツァイ チー−ピン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2017510977A publication Critical patent/JP2017510977A/ja
Publication of JP2017510977A5 publication Critical patent/JP2017510977A5/ja
Application granted granted Critical
Publication of JP6538701B2 publication Critical patent/JP6538701B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016550260A 2014-02-05 2015-02-06 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法 Active JP6538701B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461936009P 2014-02-05 2014-02-05
US61/936,009 2014-02-05
PCT/US2015/014815 WO2015120269A1 (en) 2014-02-05 2015-02-06 Cmp method for suppression of titanium nitride and titanium/titanium nitride removal

Publications (3)

Publication Number Publication Date
JP2017510977A JP2017510977A (ja) 2017-04-13
JP2017510977A5 JP2017510977A5 (https=) 2018-03-22
JP6538701B2 true JP6538701B2 (ja) 2019-07-03

Family

ID=53778475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550260A Active JP6538701B2 (ja) 2014-02-05 2015-02-06 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法

Country Status (4)

Country Link
EP (1) EP3103133A4 (https=)
JP (1) JP6538701B2 (https=)
KR (1) KR102307254B1 (https=)
WO (1) WO2015120269A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
CN113661219A (zh) * 2019-03-25 2021-11-16 Cmc材料股份有限公司 用于改善化学机械抛光浆料的颗粒分散的添加剂
US20230136485A1 (en) * 2020-03-30 2023-05-04 Fujimi Incorporated Polishing composition
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
EP4214286A4 (en) * 2020-09-18 2024-10-23 CMC Materials LLC SILICA-BASED SLURRY FOR SELECTIVE POLISHING OF CARBON-BASED FILMS

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054422A (en) * 1999-02-19 2000-04-25 Ppt Research, Inc. Cutting and lubricating composition for use with a wire cutting apparatus
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
DE102004016600A1 (de) 2004-04-03 2005-10-27 Degussa Ag Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2008004621A (ja) * 2006-06-20 2008-01-10 Toshiba Corp Ｃｕ膜ＣＭＰ用スラリー、研磨方法および半導体装置の製造方法
US7452816B2 (en) * 2006-07-26 2008-11-18 Micron Technology, Inc. Semiconductor processing method and chemical mechanical polishing methods
US20080203059A1 (en) * 2007-02-27 2008-08-28 Cabot Microelectronics Corporation Dilutable cmp composition containing a surfactant
US20090047787A1 (en) * 2007-07-31 2009-02-19 Yuzhuo Li Slurry containing multi-oxidizer and nano-abrasives for tungsten CMP
JP2009064881A (ja) * 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5472585B2 (ja) * 2008-05-22 2014-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
SG10201401549SA (en) * 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

Also Published As

Publication number Publication date
WO2015120269A1 (en) 2015-08-13
KR102307254B1 (ko) 2021-09-30
JP2017510977A (ja) 2017-04-13
EP3103133A1 (en) 2016-12-14
KR20170128063A (ko) 2017-11-22
EP3103133A4 (en) 2017-10-04

Similar Documents

Publication Publication Date Title
TWI596203B (zh) 用於抑制氮化鈦及鈦／氮化鈦移除之化學機械拋光（ｃｍｐ）方法
JP6538701B2 (ja) 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法
KR102165009B1 (ko) Gst cmp 슬러리
CN107586517B (zh) 用于屏障化学机械平面化的添加剂
CN101535442B (zh) 铜/钌/钽基材的化学机械抛光
US10124464B2 (en) Corrosion inhibitors and related compositions and methods
TWI687496B (zh) ＴｉＮ-ＳｉＮ ＣＭＰ應用之高選擇性的氮化物抑制劑
KR102160024B1 (ko) 코발트 제거를 위한 연마 슬러리
TWI463003B (zh) 拋光鋁半導體基材之組合物及方法
KR101173753B1 (ko) 구리-부동태화 ｃｍｐ 조성물 및 방법
CN107148457B (zh) 钴抛光促进剂
TWI361831B (en) Onium-containing cmp compositions and methods of use thereof
JP6930976B2 (ja) 低ｋ基板の研磨方法
TWI589676B (zh) 用於選擇性拋光鉑及釕材料之組合物及方法
KR20170012415A (ko) 높은 제거 속도 및 낮은 결함성을 갖는, 폴리실리콘 및 질화물에 비해 산화물에 대해 선택적인 cmp 조성물
CN106062931A (zh) 用于抑制氮化钛及钛/氮化钛移除的化学机械抛光方法
WO2012096931A2 (en) Metal-passivating cmp compositions and methods
CN103773244A (zh) 一种碱性化学机械抛光液

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180206

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190206

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190606

R150 Certificate of patent or registration of utility model

Ref document number: 6538701

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250