KR102304248B1 - 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 - Google Patents

발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 Download PDF

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Publication number
KR102304248B1
KR102304248B1 KR1020180013862A KR20180013862A KR102304248B1 KR 102304248 B1 KR102304248 B1 KR 102304248B1 KR 1020180013862 A KR1020180013862 A KR 1020180013862A KR 20180013862 A KR20180013862 A KR 20180013862A KR 102304248 B1 KR102304248 B1 KR 102304248B1
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KR
South Korea
Prior art keywords
transparent substrate
light emitting
transparent
emitting diode
wafer
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Application number
KR1020180013862A
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English (en)
Korean (ko)
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KR20180091743A (ko
Inventor
다카시 오카무라
Original Assignee
가부시기가이샤 디스코
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20180091743A publication Critical patent/KR20180091743A/ko
Application granted granted Critical
Publication of KR102304248B1 publication Critical patent/KR102304248B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
KR1020180013862A 2017-02-06 2018-02-05 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 KR102304248B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-019854 2017-02-06
JP2017019854A JP2018129341A (ja) 2017-02-06 2017-02-06 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number Publication Date
KR20180091743A KR20180091743A (ko) 2018-08-16
KR102304248B1 true KR102304248B1 (ko) 2021-09-17

Family

ID=63095773

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180013862A KR102304248B1 (ko) 2017-02-06 2018-02-05 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩

Country Status (4)

Country Link
JP (1) JP2018129341A (zh)
KR (1) KR102304248B1 (zh)
CN (1) CN108400225A (zh)
TW (1) TW201834040A (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122739B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光素子及びその製造方法
JP2004363380A (ja) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP4232585B2 (ja) * 2003-09-17 2009-03-04 豊田合成株式会社 発光装置
KR101809472B1 (ko) * 2009-01-14 2018-01-18 삼성전자주식회사 광추출 효율이 향상된 발광 장치
JP5495876B2 (ja) * 2010-03-23 2014-05-21 株式会社ディスコ 光デバイスウエーハの加工方法
JP2012049164A (ja) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd 発光デバイスの製造方法
KR101726807B1 (ko) * 2010-11-01 2017-04-14 삼성전자주식회사 반도체 발광소자
DE102011114641B4 (de) * 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
TWI565094B (zh) * 2012-11-15 2017-01-01 財團法人工業技術研究院 氮化物半導體結構
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
KR102222215B1 (ko) * 2013-05-15 2021-03-03 루미리즈 홀딩 비.브이. 기판내에 산란 특징을 갖는 led
JP2014239100A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015018953A (ja) * 2013-07-11 2015-01-29 株式会社ディスコ 発光チップ
JP6255235B2 (ja) * 2013-12-20 2017-12-27 株式会社ディスコ 発光チップ
EP2944620A1 (en) * 2013-12-26 2015-11-18 Shin-Etsu Quartz Products Co., Ltd. Silica glass member for wavelength conversion, and production method therefor
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
JP6176171B2 (ja) * 2014-03-28 2017-08-09 豊田合成株式会社 発光装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Also Published As

Publication number Publication date
JP2018129341A (ja) 2018-08-16
CN108400225A (zh) 2018-08-14
KR20180091743A (ko) 2018-08-16
TW201834040A (zh) 2018-09-16

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