KR102302468B1 - 분할 스퍼터링 타깃 및 그 제조 방법 - Google Patents

분할 스퍼터링 타깃 및 그 제조 방법 Download PDF

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Publication number
KR102302468B1
KR102302468B1 KR1020190173645A KR20190173645A KR102302468B1 KR 102302468 B1 KR102302468 B1 KR 102302468B1 KR 1020190173645 A KR1020190173645 A KR 1020190173645A KR 20190173645 A KR20190173645 A KR 20190173645A KR 102302468 B1 KR102302468 B1 KR 102302468B1
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KR
South Korea
Prior art keywords
sputtering target
mask material
wire
backing plate
target member
Prior art date
Application number
KR1020190173645A
Other languages
English (en)
Korean (ko)
Other versions
KR20200115039A (ko
Inventor
준 가지야마
Original Assignee
제이엑스금속주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 제이엑스금속주식회사 filed Critical 제이엑스금속주식회사
Publication of KR20200115039A publication Critical patent/KR20200115039A/ko
Application granted granted Critical
Publication of KR102302468B1 publication Critical patent/KR102302468B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
KR1020190173645A 2019-03-27 2019-12-24 분할 스퍼터링 타깃 및 그 제조 방법 KR102302468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-061706 2019-03-27
JP2019061706A JP7311290B2 (ja) 2019-03-27 2019-03-27 分割スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
KR20200115039A KR20200115039A (ko) 2020-10-07
KR102302468B1 true KR102302468B1 (ko) 2021-09-16

Family

ID=72642092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190173645A KR102302468B1 (ko) 2019-03-27 2019-12-24 분할 스퍼터링 타깃 및 그 제조 방법

Country Status (4)

Country Link
JP (1) JP7311290B2 (zh)
KR (1) KR102302468B1 (zh)
CN (1) CN111748779B (zh)
TW (1) TWI741477B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230411281A1 (en) 2020-09-23 2023-12-21 Rohm Co., Ltd. Semiconductor device, semiconductor module, motor drive device, and vehicle
US11823878B2 (en) * 2021-08-30 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition apparatus, deposition target structure, and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711172B2 (zh) 1973-12-11 1982-03-03
AU1834795A (en) * 1995-01-25 1996-08-14 Applied Kotmatsu Technology, Inc. Autoclave bonding of sputtering target assembly
JP3759673B2 (ja) * 1998-01-12 2006-03-29 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
JP4170367B2 (ja) * 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP5198925B2 (ja) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 スパッタリングターゲット
CN102686766B (zh) 2010-11-08 2014-04-09 三井金属矿业株式会社 分割溅镀靶及其制造方法
CN102712997B (zh) * 2010-11-08 2014-03-19 三井金属矿业株式会社 分割溅镀靶及其制造方法
KR20120130518A (ko) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
JP6059460B2 (ja) * 2012-07-20 2017-01-11 株式会社コベルコ科研 ターゲット組立体
KR20140036765A (ko) * 2012-09-18 2014-03-26 삼성디스플레이 주식회사 스퍼터링 장치
JP6079228B2 (ja) 2012-12-28 2017-02-15 東ソー株式会社 多分割スパッタリングターゲットおよびその製造方法
CN105908137B (zh) * 2015-02-24 2020-12-15 Ｊｘ金属株式会社 溅射靶
KR102450392B1 (ko) * 2015-11-26 2022-10-04 삼성디스플레이 주식회사 스퍼터링 장치

Also Published As

Publication number Publication date
JP7311290B2 (ja) 2023-07-19
TW202035748A (zh) 2020-10-01
CN111748779A (zh) 2020-10-09
CN111748779B (zh) 2022-10-14
TWI741477B (zh) 2021-10-01
JP2020158854A (ja) 2020-10-01
KR20200115039A (ko) 2020-10-07

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