KR102283518B1 - 광패턴화가능한 조성물, 패턴화된 고 k 박막 유전체 및 관련 장치 - Google Patents

광패턴화가능한 조성물, 패턴화된 고 k 박막 유전체 및 관련 장치 Download PDF

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KR102283518B1
KR102283518B1 KR1020177001963A KR20177001963A KR102283518B1 KR 102283518 B1 KR102283518 B1 KR 102283518B1 KR 1020177001963 A KR1020177001963 A KR 1020177001963A KR 20177001963 A KR20177001963 A KR 20177001963A KR 102283518 B1 KR102283518 B1 KR 102283518B1
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substituted
thin film
unsubstituted
vinylidene fluoride
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KR20170024007A (ko
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웨이 자오
안토니오 파세티
얀 젱
안드레아 스테파니
마우로 리바
카테리나 솔다노
미켈 무치니
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플렉스테라, 인크.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • C08F214/222—Vinylidene fluoride with fluorinated vinyl ethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3412—Heterocyclic compounds having nitrogen in the ring having one nitrogen atom in the ring
    • C08K5/3432—Six-membered rings
    • C08K5/3435—Piperidines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/45—Heterocyclic compounds having sulfur in the ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
    • C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
    • C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C09D127/16—Homopolymers or copolymers of vinylidene fluoride
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H01L51/004—
    • H01L51/052—
    • H01L51/5296—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Thin Film Transistor (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020177001963A 2014-06-26 2015-06-26 광패턴화가능한 조성물, 패턴화된 고 k 박막 유전체 및 관련 장치 Active KR102283518B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462017262P 2014-06-26 2014-06-26
EP14425084.2A EP2960280A1 (en) 2014-06-26 2014-06-26 Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP14425084.2 2014-06-26
US62/017,262 2014-06-26
PCT/US2015/038146 WO2015200872A1 (en) 2014-06-26 2015-06-26 Photopatternable compositions, patterned high k thin film dielectrics and related devices

Publications (2)

Publication Number Publication Date
KR20170024007A KR20170024007A (ko) 2017-03-06
KR102283518B1 true KR102283518B1 (ko) 2021-07-28

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US (1) US10409159B2 (enExample)
EP (2) EP2960280A1 (enExample)
JP (1) JP6608922B2 (enExample)
KR (1) KR102283518B1 (enExample)
CN (1) CN106663736B (enExample)
TW (1) TWI668516B (enExample)
WO (1) WO2015200872A1 (enExample)

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WO2023101544A1 (ko) * 2021-12-03 2023-06-08 서울대학교산학협력단 패턴 형성 제어 물질을 활용한 메탈 전극 패터닝 방법 및 메탈 전극 패턴을 갖는 기판, 전자 장치 및 디스플레이
KR20230084005A (ko) * 2021-12-03 2023-06-12 서울대학교산학협력단 패턴 형성 제어 물질을 활용한 메탈 전극 패터닝 방법 및 메탈 전극 패턴을 갖는 기판, 전자 장치 및 디스플레이
WO2025014147A1 (ko) * 2023-07-07 2025-01-16 서울대학교산학협력단 금속 증착 제어 물질을 이용한 3차원 금속 전극 패터닝 방법과 이에 의해 제조된 3차원 금속 전극 패턴을 갖는 기판

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US20180112019A1 (en) * 2013-10-22 2018-04-26 Honeywell International Inc. Light emitter devices and components with improved chemical resistance and related methods
JP6462876B2 (ja) * 2015-07-09 2019-01-30 東京応化工業株式会社 ケイ素含有樹脂組成物
WO2018118881A1 (en) * 2016-12-19 2018-06-28 Corning Incorporated A substrate with a polar elastomer dielectric and a method of coating a substrate with a polar elastomer dielectric
WO2018118890A1 (en) 2016-12-19 2018-06-28 Corning Incorporated Polar elastomer microstructures and methods for fabricating same
FR3065217B1 (fr) * 2017-04-14 2020-02-28 Arkema France Compositions reticulables a base de copolymeres fluores electroactifs
FR3068976B1 (fr) * 2017-07-17 2020-05-29 Arkema France Fabrication de films par reticulation de polymeres fluores electroactifs
FR3069544B1 (fr) * 2017-07-28 2020-05-15 Arkema France Procede de preparation d'un film de polymere fluore reticule
WO2019027899A1 (en) * 2017-07-31 2019-02-07 Corning Incorporated ACCELERATED THERMAL CROSSLINKING OF PVDF-HFP BY ADDITION OF ORGANIC BASES, AND USE OF CROSS-LINKED PVDF-HFP AS DIELECTRIC GRID MATERIAL FOR ORGANIC TCM DEVICES
FR3070041B1 (fr) 2017-08-09 2019-08-30 Arkema France Formulations a base de fluoropolymeres electroactifs et leurs applications
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GB2566972A (en) * 2017-09-29 2019-04-03 Flexenable Ltd Patterning semiconductor for TFT device
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CN108493229A (zh) * 2018-05-31 2018-09-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
US20200013991A1 (en) * 2018-07-06 2020-01-09 University Of Maryland, College Park Electrically-driven organic color-center-based single-photon sources and sensors
CN110838546A (zh) * 2018-08-17 2020-02-25 康宁股份有限公司 用于有机薄膜晶体管的栅极电介质绝缘体的基于pvdf的聚合物的uv交联
FR3086666B1 (fr) * 2018-10-02 2021-06-25 Arkema France Encre de polymere fluore a vehicule cetonique et a comportement rheologique de fluide a seuil de contrainte
FR3089978B1 (fr) 2018-12-17 2021-09-10 Arkema France Polymères fluorés électroactifs réticulables comprenant des groupements photoactifs
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CN109698276A (zh) * 2018-12-27 2019-04-30 广州天极电子科技有限公司 一种薄膜晶体管器件及其制备方法
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TWI753662B (zh) * 2020-11-19 2022-01-21 國立成功大學 自含多重邏輯閘功能之有機薄膜電晶體及其製造方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0208314A2 (en) 1985-07-12 1987-01-14 E.I. Du Pont De Nemours And Company Fluorelastomers
KR100837042B1 (ko) 2003-05-21 2008-06-11 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP4801311B2 (ja) 2001-10-18 2011-10-26 ソルヴェイ ソレクシス エス．ピー．エー． フルオロエラストマー
US20130020643A1 (en) 2010-03-30 2013-01-24 Richard David Price Transistor and its Method of Manufacture
JP7094503B2 (ja) 2016-09-28 2022-07-04 ユニリーバー・アイピー・ホールディングス・ベスローテン・ヴェンノーツハップ Ｄｅｆｉ及びタウレートアミド混合物並びにそのプロセス

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683823A (en) 1996-01-26 1997-11-04 Eastman Kodak Company White light-emitting organic electroluminescent devices
US5747183A (en) 1996-11-04 1998-05-05 Motorola, Inc. Organic electroluminescent light emitting material and device using same
KR100428515B1 (ko) * 1996-12-10 2005-06-08 주식회사 코오롱 광경화성조성물
JP2001319781A (ja) 2000-05-02 2001-11-16 Fuji Photo Film Co Ltd 有機発光素子材料の選択方法及びその材料を用いた有機発光素子
US6585914B2 (en) 2000-07-24 2003-07-01 Northwestern University N-type thiophene semiconductors
US7125989B2 (en) 2001-11-26 2006-10-24 International Business Machines Corporation Hetero diels-alder adducts of pentacene as soluble precursors of pentacene
US7074502B2 (en) 2003-12-05 2006-07-11 Eastman Kodak Company Organic element for electroluminescent devices
EP1700331A1 (en) 2003-12-22 2006-09-13 Koninklijke Philips Electronics N.V. Method for patterning a ferroelectric polymer layer
WO2005064705A1 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Increasing the wettability of polymer solutions to be deposited on hydrophobic ferroelecric polymerb layers
KR101148868B1 (ko) 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
EP1634895B1 (en) * 2004-09-09 2008-11-05 3M Innovative Properties Company Fluoropolymer for making a fluoroelastomer
US7575847B2 (en) * 2006-06-13 2009-08-18 3M Innovative Properties Company Low refractive index composition comprising fluoropolyether urethane compound
TWI335681B (en) 2007-05-18 2011-01-01 Ind Tech Res Inst White light organic electroluminescent element device
JP2010535270A (ja) 2007-08-02 2010-11-18 ノースウエスタン ユニバーシティ 共役モノマー及びポリマー並びにそれらの製造及び用途
TWI322141B (en) 2007-08-28 2010-03-21 Nat Univ Tsing Hua Host material for blue oled and white light emitting device utilizing the same
EP2245669A4 (en) 2008-01-31 2015-05-06 Univ Northwestern SOLUTION-PROCESSED INORGANIC HIGH-MOBILITY THIN FILM TRANSISTORS
TW200951160A (en) 2008-02-05 2009-12-16 Basf Se Perylene-imide semiconductor polymers
JP2009295678A (ja) * 2008-06-03 2009-12-17 Seiko Epson Corp 半導体装置の製造方法、強誘電体素子の製造方法および電子機器の製造方法
KR101587549B1 (ko) * 2009-02-12 2016-01-21 삼성전자주식회사 폴리머 및 이를 포함하는 폴리머 액츄에터
WO2010117449A2 (en) 2009-04-06 2010-10-14 University Of Kentucky Research Foundation Semiconducting compounds and devices incorporating same
JP5287987B2 (ja) * 2009-07-03 2013-09-11 ダイキン工業株式会社 架橋性フッ素ゴム組成物、フッ素ゴム成形品及びその製法
CN101957560B (zh) * 2009-07-15 2012-11-21 台湾薄膜电晶体液晶显示器产业协会 图案化的方法以及用于图案化的堆叠结构
US8440828B2 (en) 2009-12-29 2013-05-14 Polyera Corporation Organic semiconductors and devices incorporating same
EP2612376B1 (en) 2010-08-29 2018-11-21 Flexterra, Inc. Semiconducting compounds and related compositions and devices
KR20140038965A (ko) * 2011-04-21 2014-03-31 메르크 파텐트 게엠베하 공액 중합체
ITMI20110881A1 (it) 2011-05-18 2012-11-19 E T C Srl Materiale semiconduttore organico
ITMI20111445A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente a doppio gate
ITMI20111446A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
ITMI20111447A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
CN103764787A (zh) * 2011-08-12 2014-04-30 巴斯夫欧洲公司 氟化苝基半导体材料
CN103987744A (zh) 2011-12-16 2014-08-13 索尔维特殊聚合物意大利有限公司 可交联的偏二氟乙烯和三氟乙烯聚合物
KR20140107428A (ko) 2011-12-16 2014-09-04 솔베이 스페셜티 폴리머스 이태리 에스.피.에이. 비닐리덴 플루오라이드-트리플루오로에틸렌 중합체에 기반한 가교성 조성물
ITMI20120284A1 (it) 2012-02-27 2013-08-28 E T C Srl Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
US8901547B2 (en) 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0208314A2 (en) 1985-07-12 1987-01-14 E.I. Du Pont De Nemours And Company Fluorelastomers
JP4801311B2 (ja) 2001-10-18 2011-10-26 ソルヴェイ ソレクシス エス．ピー．エー． フルオロエラストマー
KR100837042B1 (ko) 2003-05-21 2008-06-11 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
US20130020643A1 (en) 2010-03-30 2013-01-24 Richard David Price Transistor and its Method of Manufacture
JP7094503B2 (ja) 2016-09-28 2022-07-04 ユニリーバー・アイピー・ホールディングス・ベスローテン・ヴェンノーツハップ Ｄｅｆｉ及びタウレートアミド混合物並びにそのプロセス

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023101544A1 (ko) * 2021-12-03 2023-06-08 서울대학교산학협력단 패턴 형성 제어 물질을 활용한 메탈 전극 패터닝 방법 및 메탈 전극 패턴을 갖는 기판, 전자 장치 및 디스플레이
KR20230084005A (ko) * 2021-12-03 2023-06-12 서울대학교산학협력단 패턴 형성 제어 물질을 활용한 메탈 전극 패터닝 방법 및 메탈 전극 패턴을 갖는 기판, 전자 장치 및 디스플레이
KR102740028B1 (ko) * 2021-12-03 2024-12-06 서울대학교산학협력단 패턴 형성 제어 물질을 활용한 메탈 전극 패터닝 방법 및 메탈 전극 패턴을 갖는 기판, 전자 장치 및 디스플레이
WO2025014147A1 (ko) * 2023-07-07 2025-01-16 서울대학교산학협력단 금속 증착 제어 물질을 이용한 3차원 금속 전극 패터닝 방법과 이에 의해 제조된 3차원 금속 전극 패턴을 갖는 기판
KR102916413B1 (ko) 2023-07-07 2026-01-22 서울대학교산학협력단 금속 증착 제어 물질을 이용한 3차원 금속 전극 패터닝 방법과 이에 의해 제조된 3차원 금속 전극 패턴을 갖는 기판

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