KR102258268B1 - 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기 - Google Patents

렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기 Download PDF

Info

Publication number
KR102258268B1
KR102258268B1 KR1020167006947A KR20167006947A KR102258268B1 KR 102258268 B1 KR102258268 B1 KR 102258268B1 KR 1020167006947 A KR1020167006947 A KR 1020167006947A KR 20167006947 A KR20167006947 A KR 20167006947A KR 102258268 B1 KR102258268 B1 KR 102258268B1
Authority
KR
South Korea
Prior art keywords
radius
curvature
pixel
lens
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020167006947A
Other languages
English (en)
Korean (ko)
Other versions
KR20160061999A (ko
Inventor
요이치 오오츠카
켄주 니시키도
잎페이 요시바
Original Assignee
소니그룹주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니그룹주식회사 filed Critical 소니그룹주식회사
Priority to KR1020217015183A priority Critical patent/KR20210062722A/ko
Publication of KR20160061999A publication Critical patent/KR20160061999A/ko
Application granted granted Critical
Publication of KR102258268B1 publication Critical patent/KR102258268B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0025—Machining, e.g. grinding, polishing, diamond turning, manufacturing of mould parts
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • H01L27/146—
    • H01L27/14621—
    • H01L27/14623—
    • H01L27/14627—
    • H01L27/14685—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
    • G03B13/32—Means for focusing
    • G03B13/34—Power focusing
    • G03B13/36—Autofocus systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020167006947A 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기 Expired - Fee Related KR102258268B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217015183A KR20210062722A (ko) 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013197861A JP2015065268A (ja) 2013-09-25 2013-09-25 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
JPJP-P-2013-197861 2013-09-25
PCT/JP2014/074244 WO2015045914A1 (ja) 2013-09-25 2014-09-12 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217015183A Division KR20210062722A (ko) 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20160061999A KR20160061999A (ko) 2016-06-01
KR102258268B1 true KR102258268B1 (ko) 2021-06-01

Family

ID=52743056

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167006947A Expired - Fee Related KR102258268B1 (ko) 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기
KR1020217015183A Ceased KR20210062722A (ko) 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217015183A Ceased KR20210062722A (ko) 2013-09-25 2014-09-12 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기

Country Status (6)

Country Link
US (1) US10088608B2 (https=)
JP (1) JP2015065268A (https=)
KR (2) KR102258268B1 (https=)
CN (1) CN105556672B (https=)
TW (1) TWI651563B (https=)
WO (1) WO2015045914A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012059A (ja) * 2013-06-27 2015-01-19 ソニー株式会社 固体撮像素子及びその製造方法、並びに撮像装置
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2016058451A (ja) * 2014-09-05 2016-04-21 キヤノン株式会社 センサおよびカメラ
CN105140250A (zh) * 2015-06-30 2015-12-09 京东方科技集团股份有限公司 光电转换阵列基板及其制作方法、光电转换装置
JP6600246B2 (ja) * 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
JP6656720B2 (ja) * 2016-01-07 2020-03-04 株式会社ジャパンディスプレイ 電極の作製方法、および電極を備える表示装置の作製方法
CN106324727B (zh) * 2016-11-03 2017-12-12 山东师范大学 自聚焦微透镜阵列的制作系统及制作方法
CN110199572B (zh) * 2017-01-20 2024-01-26 索尼半导体解决方案公司 显示装置、电子设备及制造显示装置的方法
CN107040724B (zh) 2017-04-28 2020-05-15 Oppo广东移动通信有限公司 双核对焦图像传感器及其对焦控制方法和成像装置
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
US10880467B2 (en) * 2018-06-25 2020-12-29 Omnivision Technologies, Inc. Image sensors with phase detection auto-focus pixels
US10608039B1 (en) * 2018-10-02 2020-03-31 Foveon, Inc. Imaging arrays having focal plane phase detecting pixel sensors
JP7544602B2 (ja) * 2018-12-27 2024-09-03 ソニーセミコンダクタソリューションズ株式会社 撮像素子
EP3958022A4 (en) 2019-04-15 2022-12-21 Canon Kabushiki Kaisha IMAGE CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
JP7561514B2 (ja) * 2019-04-15 2024-10-04 キヤノン株式会社 撮像素子及び撮像装置
TWI902704B (zh) * 2019-08-30 2025-11-01 日商凸版印刷股份有限公司 光電轉換元件、攝像元件及攝像系統
KR20220036630A (ko) * 2020-09-16 2022-03-23 삼성전자주식회사 컬러 보정을 위한 영상 처리 장치, 영상 처리 방법 및 이를 포함하는 영상 처리 시스템
KR20220043556A (ko) 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US11569291B2 (en) * 2020-11-05 2023-01-31 Visera Technologies Company Limited Image sensor and method forming the same
WO2022168523A1 (ja) * 2021-02-02 2022-08-11 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法
KR20220152484A (ko) * 2021-05-07 2022-11-16 삼성전자주식회사 이미지 센서
JP7786062B2 (ja) * 2021-07-21 2025-12-16 Ｔｏｐｐａｎホールディングス株式会社 固体撮像素子
KR20230056858A (ko) 2021-10-20 2023-04-28 삼성전자주식회사 이미지 센서
JP2023100350A (ja) * 2022-01-06 2023-07-19 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
FR3135330B1 (fr) * 2022-05-05 2025-11-07 St Microelectronics Crolles 2 Sas Procédé de fabrication de microlentilles
WO2025249190A1 (ja) * 2024-05-27 2025-12-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206310A (ja) 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
JP2004021209A (ja) 2002-06-20 2004-01-22 Seiko Epson Corp マイクロレンズアレイ、液晶パネル、投射型表示装置及びマイクロレンズアレイの製造方法
JP2004037873A (ja) 2002-07-03 2004-02-05 Seiko Epson Corp マイクロレンズアレイ、マイクロレンズ基板及びその製造方法、電気光学装置並びに電子機器
JP2007101661A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp マイクロレンズアレイおよびマイクロレンズアレイの製造方法
JP2008052004A (ja) * 2006-08-24 2008-03-06 Sony Corp レンズアレイ及び固体撮像素子の製造方法
JP2009109965A (ja) * 2007-10-11 2009-05-21 Nikon Corp 固体撮像素子および撮像装置
JP2010129783A (ja) * 2008-11-27 2010-06-10 Nikon Corp 撮像素子および撮像装置
JP2013021168A (ja) 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258224A (ja) * 2002-03-06 2003-09-12 Toppan Printing Co Ltd 固体撮像素子及びその製造方法
TWI278991B (en) * 2002-07-09 2007-04-11 Toppan Printing Co Ltd Solid image-pickup device and method of manufacturing the same
JP4761740B2 (ja) * 2004-08-31 2011-08-31 東京エレクトロン株式会社 マイクロレンズの形成方法
JP4285373B2 (ja) * 2004-09-01 2009-06-24 セイコーエプソン株式会社 マイクロレンズの製造方法、マイクロレンズ及びマイクロレンズアレイ、並びに電気光学装置及び電子機器
TW200628921A (en) * 2004-09-17 2006-08-16 Hitachi Maxell Microlens array, method of fabricating microlens array, and liquid crystal display apparatus with microlens array
JP2007208817A (ja) * 2006-02-03 2007-08-16 Toshiba Corp 固体撮像装置
JP4826362B2 (ja) * 2006-06-28 2011-11-30 東京エレクトロン株式会社 マイクロレンズの形成方法
US7978255B2 (en) * 2007-10-11 2011-07-12 Nikon Corporation Solid-state image sensor and image-capturing device
JP2010181485A (ja) * 2009-02-03 2010-08-19 Nikon Corp 撮像装置および撮像素子
JP2011013411A (ja) * 2009-07-01 2011-01-20 Toppan Printing Co Ltd マイクロレンズアレイの製造方法及びフォトマスク
US8659839B2 (en) * 2010-02-26 2014-02-25 Konica Minolta Advanced Layers, Inc. Imaging lens and imaging device
JP2012134261A (ja) 2010-12-20 2012-07-12 Sharp Corp レンズおよびその製造方法、固体撮像素子およびその製造方法、電子情報機器
JP2013077740A (ja) * 2011-09-30 2013-04-25 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206310A (ja) 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
JP2004021209A (ja) 2002-06-20 2004-01-22 Seiko Epson Corp マイクロレンズアレイ、液晶パネル、投射型表示装置及びマイクロレンズアレイの製造方法
JP2004037873A (ja) 2002-07-03 2004-02-05 Seiko Epson Corp マイクロレンズアレイ、マイクロレンズ基板及びその製造方法、電気光学装置並びに電子機器
JP2007101661A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp マイクロレンズアレイおよびマイクロレンズアレイの製造方法
JP2008052004A (ja) * 2006-08-24 2008-03-06 Sony Corp レンズアレイ及び固体撮像素子の製造方法
JP2009109965A (ja) * 2007-10-11 2009-05-21 Nikon Corp 固体撮像素子および撮像装置
JP2010129783A (ja) * 2008-11-27 2010-06-10 Nikon Corp 撮像素子および撮像装置
JP2013021168A (ja) 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器

Also Published As

Publication number Publication date
KR20160061999A (ko) 2016-06-01
TWI651563B (zh) 2019-02-21
CN105556672B (zh) 2019-11-12
CN105556672A (zh) 2016-05-04
TW201512732A (zh) 2015-04-01
KR20210062722A (ko) 2021-05-31
JP2015065268A (ja) 2015-04-09
US10088608B2 (en) 2018-10-02
US20160231468A1 (en) 2016-08-11
WO2015045914A1 (ja) 2015-04-02

Similar Documents

Publication Publication Date Title
KR102258268B1 (ko) 렌즈 어레이 및 그 제조 방법, 고체 촬상 장치, 및 전자 기기
US11688751B2 (en) Solid-state image pickup device, electronic apparatus, and manufacturing method
US9515114B2 (en) Solid-state imaging device, method of forming microlens in solid-state imaging device, and electronic apparatus
TWI636557B (zh) 固體攝像裝置及其製造方法、以及電子機器
US9508767B2 (en) Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US8742525B2 (en) Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN102034842B (zh) 固态成像装置及其制造方法、电子装置和透镜阵列
JP2008270679A (ja) 固体撮像装置およびその製造方法および撮像装置
KR101010375B1 (ko) 이미지센서 및 그 제조방법
CN101819981A (zh) 固态摄像装置及其制造方法以及电子设备
JP6028768B2 (ja) 固体撮像装置、固体撮像装置の製造方法、電子機器
KR100887886B1 (ko) 이미지센서 및 그 제조방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250526

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250526

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250526