KR102253587B1 - 실리콘 단결정 잉곳 제조 방법 및 실리콘 단결정 육성 장치 - Google Patents

실리콘 단결정 잉곳 제조 방법 및 실리콘 단결정 육성 장치 Download PDF

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KR102253587B1
KR102253587B1 KR1020197024913A KR20197024913A KR102253587B1 KR 102253587 B1 KR102253587 B1 KR 102253587B1 KR 1020197024913 A KR1020197024913 A KR 1020197024913A KR 20197024913 A KR20197024913 A KR 20197024913A KR 102253587 B1 KR102253587 B1 KR 102253587B1
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gas
single crystal
silicon single
silicon
pulling
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KR20190109490A (ko
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와타루 스기무라
마사타카 호우라이
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가부시키가이샤 사무코
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020197024913A 2017-02-28 2018-01-11 실리콘 단결정 잉곳 제조 방법 및 실리콘 단결정 육성 장치 Active KR102253587B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-037613 2017-02-28
JP2017037613A JP6862916B2 (ja) 2017-02-28 2017-02-28 シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置
PCT/JP2018/000518 WO2018159109A1 (ja) 2017-02-28 2018-01-11 シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置

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KR20190109490A KR20190109490A (ko) 2019-09-25
KR102253587B1 true KR102253587B1 (ko) 2021-05-18

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US (1) US20200040480A1 (cg-RX-API-DMAC7.html)
JP (1) JP6862916B2 (cg-RX-API-DMAC7.html)
KR (1) KR102253587B1 (cg-RX-API-DMAC7.html)
CN (1) CN110678585B (cg-RX-API-DMAC7.html)
DE (1) DE112018001046B4 (cg-RX-API-DMAC7.html)
WO (1) WO2018159109A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
JP6922870B2 (ja) * 2018-09-27 2021-08-18 株式会社Sumco シリコン単結晶の製造方法
TWI784689B (zh) * 2020-09-29 2022-11-21 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法
CN113564693B (zh) * 2021-08-02 2022-09-27 宁夏中欣晶圆半导体科技有限公司 低电阻率重掺砷硅单晶生产方法
JP7359241B2 (ja) * 2022-03-15 2023-10-11 株式会社Sumco シリコン単結晶の製造方法
CN120905777A (zh) * 2023-02-23 2025-11-07 隆基绿能科技股份有限公司 一种高寿命硅片及硅片吸杂方法
CN119416539B (zh) * 2025-01-03 2025-05-27 高景太阳能股份有限公司 拉晶工艺的控制方法、装置和拉晶系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003027362A1 (en) 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121994A (en) 1979-03-07 1980-09-19 Hitachi Ltd Preparing semiconductor single crystal
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
JPS62113789A (ja) * 1985-11-11 1987-05-25 Nec Corp 単結晶引上装置
JPH0777995B2 (ja) 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JPH04221782A (ja) * 1990-12-25 1992-08-12 Nissan Motor Co Ltd 超音波ドップラ方式対地速度計
JP2816625B2 (ja) * 1991-12-18 1998-10-27 コマツ電子金属株式会社 単結晶製造装置およびその制御方法
EP0625595B1 (en) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Control of oxygen concentration in single crystal pulled up from melt containing group-V element
DE102005023992A1 (de) * 2005-05-20 2006-11-23 TRüTZSCHLER GMBH & CO. KG Vorrichtung an einer Spinnereivorbereitungsmaschine, z.B. Karde, Krempel, Strecke, Kämmmaschine o.dgl., zum Ermitteln der Masse und/oder Masseschwankungen eines Fasermaterials, z.B. mindestens ein Faserband, Faservlies o.dgl., aus Baumwolle, Chemiefasern o. dgl.
JP5453749B2 (ja) 2008-09-05 2014-03-26 株式会社Ｓｕｍｃｏ 垂直シリコンデバイス用シリコンウェーハの製造方法及び垂直シリコンデバイス用シリコン単結晶引き上げ装置
KR101254998B1 (ko) 2008-11-25 2013-04-16 에스케이텔레콤 주식회사 호처리 메시지의 우회전송 제공 시스템 및 방법
US8535439B2 (en) * 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
CN201926623U (zh) * 2010-12-14 2011-08-10 深圳市赛宝伦计算机技术有限公司 一种红外气体分析仪
JP5595318B2 (ja) 2011-03-29 2014-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上装置及び単結晶引き上げ方法
US20150333193A1 (en) * 2012-12-31 2015-11-19 Memc Electronic Matrials S.P.A. Indium-doped silicon wafer and solar cell using the same
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003027362A1 (en) 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder

Also Published As

Publication number Publication date
WO2018159109A1 (ja) 2018-09-07
US20200040480A1 (en) 2020-02-06
CN110678585A (zh) 2020-01-10
DE112018001046T5 (de) 2019-11-14
CN110678585B (zh) 2021-08-24
JP6862916B2 (ja) 2021-04-21
KR20190109490A (ko) 2019-09-25
DE112018001046B4 (de) 2022-05-19
JP2018140915A (ja) 2018-09-13

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