KR102203976B1 - The system of supplying a chemical enabling removal of air-pocket and the method thereof - Google Patents

The system of supplying a chemical enabling removal of air-pocket and the method thereof Download PDF

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KR102203976B1
KR102203976B1 KR1020200117324A KR20200117324A KR102203976B1 KR 102203976 B1 KR102203976 B1 KR 102203976B1 KR 1020200117324 A KR1020200117324 A KR 1020200117324A KR 20200117324 A KR20200117324 A KR 20200117324A KR 102203976 B1 KR102203976 B1 KR 102203976B1
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South Korea
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valve
pipe
chemicals
chemical
chemical tank
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Korean (ko)
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이익중
박수남
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포이스주식회사
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Abstract

The present invention relates to a chemical supply system having an air pocket removal function, and a supply method thereof. More particularly, the present invention relates to a chemical supply system and a supply method having an air pocket removal function, which maintains a certain area of a pipe through which chemicals move in a vacuum state in the process of replacing a tank (canister) that stores chemicals with a new tank, and allows chemicals to be sucked into the vacuum air pocket when the new tank is installed. According to the present invention, when a chemical tank that supplies chemicals is replaced, the chemical inside the pipe can be completely removed, so safety is improved, and when the chemical tank is newly installed, there is an effect of preventing air from entering the inside of the pipe by allowing the chemical to flow naturally by the negative pressure inside the pipe.

Description

에어포켓 제거 기능을 갖는 화학약품 공급시스템 및 공급방법{THE SYSTEM OF SUPPLYING A CHEMICAL ENABLING REMOVAL OF AIR-POCKET AND THE METHOD THEREOF}Chemical supply system and supply method with air pocket removal function {THE SYSTEM OF SUPPLYING A CHEMICAL ENABLING REMOVAL OF AIR-POCKET AND THE METHOD THEREOF}

본 발명은 에어포켓 제거 기능을 갖는 화학약품 공급시스템 및 공급방법에 관한 것으로서, 보다 상세하게는 화학약품을 저장하는 탱크(캐니스터)를 새로운 탱크로 교체하는 과정에서 화학약품이 이동하는 배관의 일정 영역을 진공상태로 유지하도록 하고, 새로운 탱크를 장착했을 때 진공상태의 에어포켓 내부로 화학약품이 빨려들어갈 수 있도록 하는 에어포켓 제거 기능을 갖는 화학약품 공급시스템 및 공급방법에 관한 것이다.The present invention relates to a chemical supply system and a supply method having an air pocket removal function, and more particularly, a certain area of a pipe through which chemicals move in the process of replacing a tank (canister) storing chemicals with a new tank. The present invention relates to a chemical supply system and a supply method having an air pocket removal function that maintains the vacuum in a vacuum state and allows chemicals to be sucked into the vacuum air pocket when a new tank is installed.

반도체, LED, Solar Cell 등의 제조공정 중의 하나인 에피텍시(epitaxy) 공정은 단결정실리콘 위에 각종 반도체 관련 재료들을 올려놓기 위해 일종의 얇은 필름으로 실리콘의 표면을 덮는 코팅공정이다. 각 재료들이 특정 위치에 정확히 위치할 수 있도록 기초공사를 하는 것으로서, 일반적인 선택적 에피텍시 성장법은 반도체물질이 노출된 표면에만 그와 동종 또는 이종의 반도체막이 성장되고, 산화막, 질화막 등의 절연막으로 덮여 있는 표면에 는 아무런 막도 성장되지 않도록 하는 기술이다.The epitaxy process, one of the manufacturing processes of semiconductors, LEDs, and solar cells, is a coating process that covers the surface of silicon with a kind of thin film to place various semiconductor-related materials on single crystal silicon. Basic construction is performed so that each material can be accurately positioned at a specific location. In the general selective epitaxy growth method, a semiconductor film of the same or different type is grown only on the surface of the exposed semiconductor material, and an insulating film such as an oxide film or a nitride film is formed. It is a technology that prevents any film from growing on the covered surface.

특수가스를 활용해 화학적으로 코팅물질을 증착시킨다 하여 대개 CVD(Chemical Vapor Deposition)공정으로 불린다.It is commonly called CVD (Chemical Vapor Deposition) because it chemically deposits a coating material using a special gas.

구체적으로 에피텍시 공정은 낮은 압력에서 특수가스와의 화학반응을 통해 증착시키는 LPCVD(Low Pressure CVD), 일반대기압에서 증착시키는 APCVD(Atmospheric Pressure CVD), 고압에서 증착시키는 HPCVD(High Pressure CVD), 강력한 전압으로 플라즈마를 발생시켜 증착시키는 PECVD(Plasma Enhanced CVD), 갈륨, 인, 알루미늄 등 금속유기물을 증착시키는 MOCVD(금속유기화학기상증착) 등으로 구분된다.Specifically, the epitaxy process includes LPCVD (Low Pressure CVD), which is deposited through a chemical reaction with a special gas at low pressure, APCVD (Atmospheric Pressure CVD), which is deposited at a general atmospheric pressure, and HPCVD (High Pressure CVD), which is deposited at high pressure. It is divided into PECVD (Plasma Enhanced CVD), which generates and deposits plasma with a strong voltage, and MOCVD (Metal-Organic Chemical Vapor Deposition), which deposits metallic organic substances such as gallium, phosphorus, and aluminum.

이 공정에는 고순도 TEOS, TiCL4, TMA, LTO520, TEMAZr, TEMAHf, HBO, 4MS, 3MS, TEB, TEPO 등의 화학약품(특수 약액)이 사용되며 운송가스(carrier gas)로서 고순도의 아르곤(Ar), 헬륨(He), 수소(H2), 질소(N2) 등이 사용된다.In this process, chemicals (special chemicals) such as high purity TEOS, TiCL4, TMA, LTO520, TEMAZr, TEMAHf, HBO, 4MS, 3MS, TEB, and TEPO are used. As a carrier gas, high purity argon (Ar), Helium (He), hydrogen (H2), nitrogen (N2), and the like are used.

아르곤과 같은 운송가스의 압력을 이용한 펌프로 증착용 화학약품에 추진력을 가하여 화학약품이 이동하도록 하는 방법을 사용한다.It uses a pump that uses the pressure of a transport gas such as argon to apply a driving force to the chemicals for deposition to move the chemicals.

그런데, 화학약품을 저장하는 약품탱크를 새로운 약품탱크로 교체하기 위해 분리하는 과정에서 화학약품이 배관의 일부 공간에 남아있는 경우가 있다. 배관에 남아있는 화학약품은 작업자에게 위험요소가 될 수 있기 때문에 이를 제거하기 위해 퍼지공정을 진행하게 되는데, 통상적인 방법으로 퍼지공정을 진행하는 경우에는 배관 내부에 공기가 차있게 되므로 압력의 불안정 현상 및 유체의 흐름에 충격이 발생하여 화학약품이 원활하게 유입되지 못하는 문제가 있다.However, in the process of separating a chemical tank storing chemicals in order to replace it with a new chemical tank, there are cases where chemicals remain in some spaces of the pipe. Since chemicals remaining in the piping can be a risk to the operator, a purge process is performed to remove them.If the purge process is carried out in a conventional way, the air becomes full inside the piping, so the pressure is unstable. And there is a problem in that the chemical does not flow smoothly due to the occurrence of an impact in the flow of the fluid.

KRKR 10-138460410-1384604 B1B1

전술한 문제점을 해결하기 위한 본 발명은 화학약품이 이송되는 배관의 일부를 진공상태로 유지하면서 약품탱크를 분리하고, 새로 장착된 약품탱크 내부의 화학약품이 배관 내부의 음압에 의해 진공공간(에어포켓)으로 빨려들어갈 수 있도록 하는 에어포켓 제거 기능을 갖는 화학약품 공급시스템 및 공급방법을 제공하는 것을 목적으로 한다.The present invention for solving the above-described problem is to separate the chemical tank while maintaining a part of the pipe through which the chemical is transferred in a vacuum state, and the chemicals inside the newly installed chemical tank are transferred to the vacuum space (air It is an object of the present invention to provide a chemical supply system and supply method having an air pocket removal function that allows it to be sucked into a pocket).

전술한 문제점을 해결하기 위해 안출된 본 발명은 반도체 제조를 위해 반도체 생산장치(106)에서 사용되는 화학약품을 공급하는 공급라인의 배관 내부에 남아있는 화학약품이나 이물질을 제거하고, 배관 내부의 에어포켓을 제거하는 공급시스템으로서, 제1가압기(102)와 제1약품탱크(10)의 가스 유입구를 연결하며, 제1-1밸브(134), 제1-2밸브(136), 제1-3밸브(138)가 순차적으로 설치되는 제1배관(114)과; 제2가압기(104)와 제2약품탱크(20)의 가스 유입구를 연결하며, 제2-1밸브(140)와 제2-2밸브(142)가 순차적으로 설치되는 제2배관(116)과; 상기 제1약품탱크(10)의 화학약품 유출구와 상기 제2약품탱크(20)의 화학약품 유출구 사이를 연결하며, 제3-1밸브(143), 제3-2밸브(144), 제3-4밸브(146), 제3-3밸브(145)가 순차적으로 설치되는 제3배관(118)과; 상기 제3-2밸브(144) 및 상기 제3-4밸브(146)의 사이에 형성된 분기점과 상기 반도체 생산장치(106)를 연결하며, 제4밸브(148)과 설치되는 제4배관(120)과; 상기 제1배관(114)에서 상기 제1-1밸브(134) 및 상기 제1-2밸브(136)의 사이와 진공펌프(112)를 연결하며, 제8밸브(162)가 설치되는 제8배관(128)과; 상기 제1-3밸브(138) 및 상기 제3-1밸브(143)를 연결하며, 제9밸브(164)가 설치되는 제9배관(130);을 포함하며, 상기 진공펌프(112)는 상기 제1약품탱크(10)를 장착한 상태에서 상기 제3-1밸브(143) 및 상기 제3-2밸브(144) 사이의 에어포켓에 있는 공기를 외부로 배출시켜 진공공간을 형성하는 것을 특징으로 한다.The present invention conceived to solve the above-described problem is to remove chemicals or foreign substances remaining in the pipe of the supply line supplying the chemicals used in the semiconductor production device 106 for semiconductor manufacturing, and As a supply system for removing pockets, the first pressurizer 102 and the gas inlet of the first chemical tank 10 are connected, and the 1-1 valve 134, the 1-2 valve 136, and the 1- A first pipe 114 to which three valves 138 are sequentially installed; The second pipe 116 which connects the gas inlet of the second pressurizer 104 and the second chemical tank 20, and the 2-1 valve 140 and the 2-2 valve 142 are sequentially installed, ; A connection between the chemical outlet of the first chemical tank 10 and the chemical outlet of the second chemical tank 20, and the 3-1 valve 143, the 3-2 valve 144, and the third A third pipe 118 in which the -4 valve 146 and the 3-3 valve 145 are sequentially installed; A fourth pipe 120 that connects the semiconductor production device 106 to a branch point formed between the 3-2 valve 144 and the 3-4 valve 146, and is installed with the fourth valve 148 )and; The first pipe 114 connects the vacuum pump 112 between the 1-1 valve 134 and the 1-2 valve 136, and an eighth valve 162 is installed. A pipe 128; And a ninth pipe 130 connecting the first-3 valve 138 and the 3-1 valve 143 to which the ninth valve 164 is installed, and the vacuum pump 112 In the state in which the first chemical tank 10 is mounted, the air in the air pocket between the 3-1 valve 143 and the 3-2 valve 144 is discharged to the outside to form a vacuum space. It is characterized.

상기 제1약품탱크(10)를 교체하는 과정에서는 상기 진공펌프(112)를 동작시키면서 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164), 상기 제3-1밸브(143)를 모두 열고, 상기 제1-1밸브(134)와 상기 제3-2밸브(144)를 모두 닫아서 상기 진공공간을 형성하는 것을 특징으로 한다.In the process of replacing the first chemical tank 10, while operating the vacuum pump 112, the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, Opening both the ninth valve 164 and the 3-1 valve 143, and closing both the 1-1 valve 134 and the 3-2 valve 144 to form the vacuum space It is characterized.

상기 진공공간의 형성이 완료되면, 상기 진공펌프(112)의 동작을 중단시키고, 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164)를 닫아주는 것을 특징으로 한다.When the formation of the vacuum space is completed, the operation of the vacuum pump 112 is stopped, and the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, and the It is characterized in that it closes the ninth valve 164.

다른 실시예에 따른 본 발명은 전술한 공급시스템을 이용한 공급방법으로서, 화학약품이 저장된 상기 제1약품탱크(10)를 장착하는 제1단계와; 상기 진공펌프(112)를 동작시키면서 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164), 상기 제3-1밸브(143)를 열어주는 제2단계와; 상기 제1-1밸브(134)와 상기 제3-2밸브(144)를 닫아주는 제3단계와; 상기 에어포켓에 저장된 공기가 배출되고 진공공간이 형성되면, 상기 제9밸브(164)를 닫는 것과 동시에 상기 진공펌프(112)의 동작을 중단시키는 제4단계와; 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138)를 닫아주는 제5단계와; 상기 제3-1밸브(143)를 열어서 상기 제1약품탱크(10)에 저장된 화학약품이 상기 진공공간의 내부로 흘러들어가게 하는 제6단계;를 포함한다.The present invention according to another embodiment is a supply method using the above-described supply system, comprising: a first step of mounting the first chemical tank 10 in which chemicals are stored; While operating the vacuum pump 112, the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, the ninth valve 164, the 3-1 A second step of opening the valve 143; A third step of closing the 1-1 valve 134 and the 3-2 valve 144; A fourth step of closing the ninth valve (164) and stopping the operation of the vacuum pump (112) when the air stored in the air pocket is discharged and a vacuum space is formed; A fifth step of closing the eighth valve 162, the 1-2 valve 136, and the 1-3 valve 138; And a sixth step of opening the 3-1 valve 143 to allow the chemicals stored in the first chemical tank 10 to flow into the vacuum space.

본 발명에 따르면 화학약품을 공급하는 약품탱크의 교체시에 배관 내부의 화학약품을 완전히 제거할 수 있어서 안전성이 향상되며, 약품탱크를 새로 장착했을 때, 배관 내부의 음압에 의해 화학약품이 자연적으로 흘러들어가도록 함으로써 배관 내부에 공기가 들어가지 않도록 하는 효과가 있다.According to the present invention, when the chemical tank supplying chemicals is replaced, the chemicals inside the pipe can be completely removed, so safety is improved. When the chemical tank is newly installed, the chemicals are naturally absorbed by the negative pressure inside the pipe. It has the effect of preventing air from entering the pipe by allowing it to flow.

도 1은 본 발명의 실시예에 따른 공급시스템의 구조를 나타낸 연결도.
도 2는 제1가압기에서 불활성가스를 제1약품탱크의 내부로 주입하여 화학약품이 반도체 생산장치로 공급되도록 하는 상태를 나타낸 연결도.
도 3은 화학약품의 공급원을 제1약품탱크에서 제2약품탱크로 전환한 상태를 나타낸 연결도.
도 4는 퍼지용 가스를 주입하여 배관 내부에 남아있는 화학약품을 벤트 방향으로 배출되도록 하는 상태를 나타낸 연결도.
도 5는 퍼지공정이 끝난 후 제1약품탱크를 제거한 상태를 나타낸 연결도.
도 6은 화학약품이 저장된 새로운 제1약품탱크를 장착한 상태를 나타낸 연결도.
도 7은 에어포켓이 형성된 부분을 진공상태로 만드는 과정을 나타낸 연결도.
도 8은 진공펌프의 동작을 중단시켜 배관 내부에 진공공간을 유지한 상태를 나타낸 연결도.
도 9는 진공공간 내부에 제1약품탱크에 저장된 화학약품이 흘러들어가도록 하는 상태를 나타낸 연결도.
1 is a connection diagram showing the structure of a supply system according to an embodiment of the present invention.
FIG. 2 is a connection diagram showing a state in which an inert gas is injected into a first chemical tank from a first pressurizer so that chemicals are supplied to a semiconductor production device.
Figure 3 is a connection diagram showing a state in which the supply source of chemicals is switched from the first chemical tank to the second chemical tank.
4 is a connection diagram showing a state in which a purge gas is injected to discharge chemicals remaining in the pipe in the vent direction.
5 is a connection diagram showing a state in which the first chemical tank is removed after the purge process is completed.
6 is a connection diagram showing a state in which a new first chemical tank in which chemicals are stored is installed.
Figure 7 is a connection diagram showing a process of making the air pocket formed portion in a vacuum state.
8 is a connection diagram showing a state in which a vacuum space is maintained inside the pipe by stopping the operation of the vacuum pump.
9 is a connection diagram showing a state in which chemicals stored in the first chemical tank flow into the vacuum space.

이하에서 도면을 참조하여 본 발명의 실시예에 따른 "에어포켓 제거 기능을 갖는 화학약품 공급시스템 및 공급방법"을 설명한다.Hereinafter, a "chemical supply system and supply method having an air pocket removal function" according to an embodiment of the present invention will be described with reference to the drawings.

도 1은 본 발명의 실시예에 따른 정화시스템의 구조를 나타낸 연결도이다.1 is a connection diagram showing the structure of a purification system according to an embodiment of the present invention.

본 발명의 실시예에 따른 "에어포켓 제거 기능을 갖는 화학약품 공급시스템"(이하, '공급시스템'이라 함)은 종래 기술의 배관 연결구조와 유사한 구조의 공급시스템(100)으로 이루어진다. 다만, 몇 개의 배관과 밸브가 추가되어 화학약품이나 솔벤트의 이동 경로가 달라진다.A "chemical supply system having an air pocket removal function" (hereinafter, referred to as a'supply system') according to an embodiment of the present invention comprises a supply system 100 having a structure similar to a pipe connection structure of the prior art. However, several pipes and valves are added to change the path of chemicals or solvents.

반도체 생산장치(106)에서는 반도체 기판의 표면에 증착이 이루어지면서 회로 패턴이 형성된다. 반도체 생산장치(106)에서 사용되는 증착용 화학약품을 공급하는 공급시스템(100)은 여러 종류의 배관과 밸브에 의해 반도체 생산장치(106)와 가압기, 약품탱크, 폐기물탱크 등에 연결된다.In the semiconductor production apparatus 106, a circuit pattern is formed while deposition is performed on the surface of a semiconductor substrate. The supply system 100 for supplying the deposition chemical used in the semiconductor production device 106 is connected to the semiconductor production device 106 and a pressurizer, a chemical tank, a waste tank, and the like by various types of pipes and valves.

화학약품 공급시스템(100)의 내부에는 동일한 구성을 가진 두 개의 라인이 구비된다. 첫 번째 라인은 제1가압기(102)와 제1약품탱크(10)를 연결하면서 화학약품을 반도체 생산장치(106)로 공급하는 계통이며, 두 번째 라인은 제2가압기(104)와 제2약품탱크(20)를 연결하면서 제1약품탱크(10)의 화학약품이 다 소진되었을 때, 화학약품을 반도체 생산장치(106)로 공급하는 계통이다.Two lines having the same configuration are provided inside the chemical supply system 100. The first line is a system that connects the first pressurizer 102 and the first chemical tank 10 to supply chemicals to the semiconductor production device 106, and the second line is the second pressurizer 104 and the second chemicals. When the chemicals in the first chemical tank 10 are exhausted while connecting the tank 20, the chemicals are supplied to the semiconductor production device 106.

첫 번째와 두 번째 라인은 모두 동일한 구성요소로 이루어지며, 동일한 방식으로 화학약품을 반도체 생산장치(106)에 순차적으로 공급한다. 각각의 라인에 포함된 구성요소 중에서 서로 대응되는 구성요소는 모두 동일한 구조로 이루어져서 동일한 방식으로 구동하며, 동일한 대상물을 저장한다.Both the first and second lines are made of the same components, and chemicals are sequentially supplied to the semiconductor production apparatus 106 in the same manner. Among the constituent elements included in each line, the constituent elements corresponding to each other have the same structure and are driven in the same manner, and the same object is stored.

먼저, 제1가압기(102)와 제1약품탱크(10)의 가스 유입구를 연결하는 제1배관(114)에 제1-1밸브(134)와 제1-2밸브(136), 제1-3밸브(138)가 순차적으로 설치된다. 또한, 제2가압기(104)와 제2약품탱크(20)의 가스 유입구를 연결하는 제2배관(116)에 제2-1밸브(140)와 제2-2밸브(142)가 순차적으로 설치된다.First, in the first pipe 114 connecting the gas inlet of the first pressurizer 102 and the first chemical tank 10, the 1-1 valve 134, the 1-2 valve 136, and the 1- Three valves 138 are installed sequentially. In addition, the 2-1 valve 140 and the 2-2 valve 142 are sequentially installed in the second pipe 116 connecting the gas inlet of the second pressurizer 104 and the second chemical tank 20 do.

또한, 제1약품탱크(10)의 화학약품 유출구와 제2약품탱크(20)의 화학약품 유출구 사이에는 제3배관(118)이 연결되며, 제3배관(118)의 가운데에서 분기된 제4배관(120)은 반도체 생산장치(106)에 연결된다. 따라서 제1약품탱크(10) 또는 제2약품탱크(20)에서 배출된 화학약품은 제3배관(118)을 따라 이동한 후 제4배관(120)을 따라 반도체 생산장치(106)에 유입된다.In addition, a third pipe 118 is connected between the chemical outlet of the first chemical tank 10 and the chemical outlet of the second chemical tank 20, and a fourth pipe branched from the middle of the third pipe 118 The pipe 120 is connected to the semiconductor production device 106. Therefore, the chemicals discharged from the first chemical tank 10 or the second chemical tank 20 move along the third pipe 118 and then flow into the semiconductor production apparatus 106 along the fourth pipe 120. .

제3배관(118) 중에서 제1약품탱크(10)로부터 제4배관(120)의 분기점 사이에는 제3-1밸브(143)와 제3-2밸브(144)가 순차적으로 설치된다. 또한 제2약품탱크(20)로부터 제4배관(120)의 분기점 사이에는 제3-3밸브(145)와 제3-4밸브(146)가 순차적으로 설치된다.Among the third pipes 118, a 3-1 valve 143 and a 3-2 valve 144 are sequentially installed between the branch points of the first chemical tank 10 to the fourth pipe 120. In addition, between the branch point of the fourth pipe 120 from the second chemical tank 20, the 3-3 valve 145 and the 3-4 valve 146 are sequentially installed.

제3배관(118)의 가운데에는 양측을 연결하는 제5배관(122)이 설치된다. 제5배관(122)은 제3-1밸브(143) 및 제3-2밸브(144)의 가운데와, 제3-3밸브(145) 및 제3-4밸브(146)의 가운데를 서로 연결한다. 제5배관(122)에는 제5-1밸브(150) 및 제5-2밸브(152)가 설치되며, 제5-1밸브(150) 및 제5-2밸브(152)의 가운데에는 제6배관(124)의 일측이 연결된다. 제6밸브(154)가 설치된 제6배관(124)의 타측은 퍼지용가압기(108)에 연결된다. 따라서 퍼지용가압기(108)에서 공급되는 퍼지용 불활성가스는 제6밸브(154)의 개폐 동작에 따라 제5배관(122)의 가운데로 유입되고, 좌우측으로 분기하여 제3배관(118)으로 들어가게 된다.In the middle of the third pipe 118, a fifth pipe 122 connecting both sides is installed. The fifth pipe 122 connects the center of the 3-1 valve 143 and the 3-2 valve 144 and the center of the 3-3 valve 145 and the 3-4 valve 146 to each other. do. The 5-1 valve 150 and the 5-2 valve 152 are installed in the fifth pipe 122, and a sixth valve in the center of the 5-1 valve 150 and the 5-2 valve 152 One side of the pipe 124 is connected. The other side of the sixth pipe 124 in which the sixth valve 154 is installed is connected to the purge pressurizer 108. Therefore, the purge inert gas supplied from the purge pressurizer 108 flows into the center of the fifth pipe 122 according to the opening and closing operation of the sixth valve 154, and branches to the left and right to enter the third pipe 118. do.

가스의 배출을 위한 벤트(110)에는 제7배관(126)의 일측이 연결된다. 제7배관(126)의 타측은 두 개의 경로로 분기되며, 분기된 각각의 배관의 말단은 제1배관(114)과 제2배관(116)에 각각 연결된다. 제7배관의 분기된 두 개의 배관의 말단은 각각 제1-1밸브(134) 및 제1-2밸브(136)의 사이에, 제2-1밸브(140) 및 제2가압기(104)의 사이에 연결된다.One side of the seventh pipe 126 is connected to the vent 110 for discharging the gas. The other side of the seventh pipe 126 is branched into two paths, and the ends of each branched pipe are connected to the first pipe 114 and the second pipe 116, respectively. The ends of the two branched pipes of the seventh pipe are between the 1-1 valve 134 and the 1-2 valve 136, respectively, of the 2-1 valve 140 and the second pressurizer 104. Is connected between.

또한 제7배관(126)에는 벤트(110)와 분기점 사이에 제7-1밸브(156)가 설치되며, 분기된 두 개의 배관에는 각각 제7-2밸브(158) 및 제7-3밸브(160)가 설치된다. 제7-2밸브(158)는 제1배관(114)으로부터 유입되는 가스의 흐름을 제어하고, 제7-3밸브(160)는 제2배관(116)으로부터 유입되는 가스의 흐름을 제어한다.In addition, the 7-1 valve 156 is installed between the vent 110 and the branch point in the seventh pipe 126, and the 7-2 valve 158 and the 7-3 valve ( 160) is installed. The 7-2 valve 158 controls the flow of gas introduced from the first pipe 114, and the 7-3 valve 160 controls the flow of gas introduced from the second pipe 116.

진공펌프(112)와 제1배관(114)의 사이에는 제8배관(128)이 연결되며, 제8배관(128)에는 제8밸브(162)가 설치된다. 제8배관(128)은 제1배관(114)에서 제1-1밸브(134) 및 제1-2밸브(136)의 사이에 연결된다.An eighth pipe 128 is connected between the vacuum pump 112 and the first pipe 114, and an eighth valve 162 is installed in the eighth pipe 128. The eighth pipe 128 is connected between the 1-1 valve 134 and the 1-2 valve 136 in the first pipe 114.

또한, 제1-3밸브(138)와 제3-1밸브(143)는 제9밸브(164)가 설치된 제9배관(130)에 의해 서로 연결된다. 그리고 제3-3밸브(145) 및 제2-2밸브(142)는 제10밸브(166)가 설치된 제10배관(132)에 의해 서로 연결된다.In addition, the 1-3 valve 138 and the 3-1 valve 143 are connected to each other by a ninth pipe 130 in which the ninth valve 164 is installed. In addition, the 3-3 valve 145 and the 2-2 valve 142 are connected to each other by a tenth pipe 132 in which the tenth valve 166 is installed.

본 발명에 포함된 배관은 화학약품이나 불활성 가스, 공기나 솔벤트 등의 물질이 이동하는 통로 역할을 하며, 밸브는 배관을 개방하거나 폐쇄하여 이러한 물질의 이동을 제한하거나 허용하는 역할을 한다. 밸브의 동작 여부는 가압기 등의 동작을 제어하기 위한 제어부(도면 미도시)에 의해 함께 제어된다.The piping included in the present invention serves as a passage through which substances such as chemicals, inert gas, air or solvent move, and the valve serves to limit or allow the movement of these substances by opening or closing the piping. Whether the valve is operated or not is controlled together by a control unit (not shown) for controlling the operation of the pressurizer or the like.

이하에서는 이와 같은 구성을 갖는 공급시스템(100)에서 화학약품을 공급하고, 배관 내부에 남은 잔류 물질을 제거하는 과정을 설명한다.Hereinafter, a process of supplying chemicals from the supply system 100 having such a configuration and removing residual substances remaining in the pipe will be described.

도 2는 제1가압기에서 불활성가스를 제1약품탱크의 내부로 주입하여 화학약품이 반도체 생산장치로 공급되도록 하는 상태를 나타낸 연결도, 도 3은 화학약품의 공급원을 제1약품탱크에서 제2약품탱크로 전환한 상태를 나타낸 연결도, 도 4는 퍼지용 가스를 주입하여 배관 내부에 남아있는 화학약품을 벤트 방향으로 배출되도록 하는 상태를 나타낸 연결도, 도 5는 퍼지공정이 끝난 후 제1약품탱크를 제거한 상태를 나타낸 연결도, 도 6은 화학약품이 저장된 새로운 제1약품탱크를 장착한 상태를 나타낸 연결도이다.FIG. 2 is a connection diagram showing a state in which an inert gas is injected into a first chemical tank from a first pressurizer so that chemicals are supplied to a semiconductor production device. FIG. 3 is a second chemical supply source from the first chemical tank. A connection diagram showing the state of conversion to a chemical tank, FIG. 4 is a connection diagram showing a state in which a purge gas is injected to discharge the chemicals remaining in the pipe in the vent direction, and FIG. 5 is a first A connection diagram showing a state in which the chemical tank is removed, and FIG. 6 is a connection diagram showing a state in which a new first chemical tank in which chemicals are stored is installed.

먼저, 두 개의 약품탱크 중에서 제1약품탱크(10)에 저장된 화학약품을 공급한다. 제1약품탱크(10)를 사용하는 동안에는 제2약품탱크(20)는 공급 대기상태를 유지하게 된다. 도 2에 도시된 바와 같이, 제1가압기(102)가 동작하면서 제1배관(114)을 통해 불활성가스를 제1약품탱크(10)의 가스 유입구로 투입한다. 이를 위해 제1-1밸브(134)와 제1-2밸브(136), 제1-3밸브(138)는 열린 상태가 된다.First, the chemicals stored in the first chemical tank 10 are supplied among the two chemical tanks. While the first chemical tank 10 is in use, the second chemical tank 20 maintains a supply standby state. As shown in FIG. 2, while the first pressurizer 102 operates, an inert gas is injected into the gas inlet of the first chemical tank 10 through the first pipe 114. To this end, the 1-1 valve 134, the 1-2 valve 136, and the 1-3 valve 138 are opened.

불활성 가스가 유입되면 제1약품탱크(10) 내부의 압력 증가로 인해 내부에 저장된 화학약품이 화학약품 유출구를 통해 배출되고, 제3배관(118)과 제4배관(120)을 통해 이동하여 반도체 생산장치(106)에 공급된다. 이 상태에서는 제3-1밸브(143)와 제3-2밸브(144), 제4밸브(148)는 열린 상태가 되며, 제9밸브(164)와 제5-1밸브(150), 제3-4밸브(146)는 닫힌 상태가 된다.When an inert gas is introduced, chemicals stored in the first chemical tank 10 are discharged through the chemical outlet and move through the third pipe 118 and the fourth pipe 120 due to an increase in the pressure inside the first chemical tank 10 to move to the semiconductor. It is supplied to the production device 106. In this state, the 3-1 valve 143, the 3-2 valve 144, and the fourth valve 148 are opened, and the ninth valve 164, the 5-1 valve 150, and the The 3-4 valve 146 is in a closed state.

제1약품탱크(10)에 저장된 화학약품이 다 소진되거나 일정 양 이하로 줄어든 경우, 화학약품이 채워진 제2약품탱크(20)를 사용하기 위해 공급경로를 전환하게 된다. 도 3에 도시된 바와 같이, 제2가압기(104)가 동작하면서 불활성 가스를 제2약품탱크(20)에 투입하고, 동일한 방식으로 화학약품이 배출되어 제3배관(118)과 제4배관(120)을 통과하여 반도체 생산장치(106)에 공급된다.When the chemicals stored in the first chemical tank 10 are exhausted or reduced to a certain amount or less, the supply path is switched to use the second chemical tank 20 filled with chemicals. As shown in FIG. 3, while the second pressurizer 104 is operating, an inert gas is injected into the second chemical tank 20, and chemicals are discharged in the same manner, so that the third pipe 118 and the fourth pipe ( It passes through 120 and is supplied to the semiconductor production apparatus 106.

제1약품탱크(10)로부터 화학약품이 공급되거나, 제1약품탱크(10)로 화학약품이 공급되지 않도록 제1가압기(102)의 동작을 중단시키고, 제1배관(114)에 설치된 제1-1밸브(134)와 제1-2밸브(136), 제1-3밸브(138)를 닫힌 상태로 전환시킨다. 그리고 제3-1밸브(143)와 제3-2밸브(144)도 닫는다. 제2배관(116)에서는 제2-1밸브(140)와 제2-1밸브(140), 제3-3밸브(145), 제3-4밸브(146)를 열고, 제10밸브(166) 및 제5-2밸브(152)는 닫는다.Stop the operation of the first pressurizer 102 so that chemicals are not supplied from the first chemical tank 10 or the chemicals are not supplied to the first chemical tank 10, and the first installed in the first pipe 114 The -1 valve 134, the 1-2 valve 136, and the 1-3 valve 138 are switched to the closed state. And the 3-1 valve 143 and the 3-2 valve 144 are also closed. In the second pipe 116, the 2-1 valve 140, the 2-1 valve 140, the 3-3 valve 145, and the 3-4 valve 146 are opened, and the 10th valve 166 ) And the 5-2 valve 152 are closed.

이와 같은 상태에서는 제2약품탱크(20)의 화학약품이 반도체 생산장치(106)로 공급되고, 제1약품탱크(10)는 교체 준비 상태가 된다.In this state, the chemicals of the second chemical tank 20 are supplied to the semiconductor production device 106, and the first chemical tank 10 is ready for replacement.

그리고, 제1약품탱크(10)를 분리하고, 화학약품이 저장된 새로운 제1약품탱크(10)를 장착하기 위해 내부 배관에 남아있는 화학약품이나 솔벤트, 수분 등을 제거하기 위한 퍼지공정(정화작업)을 진행한다.And, in order to separate the first chemical tank 10 and install a new first chemical tank 10 in which chemicals are stored, a purging process for removing chemicals, solvents, moisture, etc. remaining in the internal piping (purification work ) To proceed.

도 4에 도시된 바와 같이, 퍼지용가압기(108)가 동작하면서 퍼지공정을 위한 불활성 가스를 제6배관(124)을 통해 제5배관(122)으로 공급한다. 이때, 제6배관(124)에 설치된 제6밸브(154)와 제5배관(122)에 설치된 제5-1밸브(150)를 열어주고, 제3-1밸브(143)와 제9밸브(164), 제1-3밸브(138), 제1-2밸브(136), 제7-2밸브(158), 제7-1밸브(156)도 모두 열어준다. 제1-1밸브(134)와 제8밸브(162)는 닫힌 상태를 유지하도록 한다.As shown in FIG. 4, while the purge pressurizer 108 operates, an inert gas for the purge process is supplied to the fifth pipe 122 through the sixth pipe 124. At this time, the sixth valve 154 installed in the sixth pipe 124 and the 5-1 valve 150 installed in the fifth pipe 122 are opened, and the 3-1 valve 143 and the ninth valve ( 164), the 1-3 valve 138, the 1-2 valve 136, the 7-2 valve 158, and the 7-1 valve 156 are all opened. The 1-1 valve 134 and the 8th valve 162 are maintained in a closed state.

퍼지용 불활성 가스의 압력으로 인해 제1배관(114)과 제3배관(118), 제9배관(130)에 남아있던 화학약품이나 솔벤트 등이 벤트(110)로 배출된다. 이로 인해 제1약품탱크(10)를 교체하는 과정에서 위험물질의 누출로 인한 사고를 방지할 수 있다.Chemicals or solvents remaining in the first pipe 114, the third pipe 118, and the ninth pipe 130 due to the pressure of the inert gas for purge are discharged to the vent 110. Accordingly, accidents due to leakage of dangerous substances can be prevented in the process of replacing the first chemical tank 10.

퍼지공정이 종료되면 퍼지용가압기(108)의 동작을 중단시키고, 제6밸브(154)와 제5-1밸브(150)를 닫는다. 그리고 제7-1밸브(156)와 제7-2밸브(158)도 닫아준다.When the purge process is finished, the operation of the purge pressurizer 108 is stopped, and the sixth valve 154 and the 5-1 valve 150 are closed. In addition, the 7-1 valve 156 and the 7-2 valve 158 are also closed.

다음으로 도 5에 도시된 바와 같이, 화학약품이 다 소진된 제1약품탱크(10)를 분리한다. 이 상태에서 제2약품탱크(20)는 계속해서 화학약품을 반도체 생산장치(106)에 공급하는 상태를 유지한다.Next, as shown in FIG. 5, the first chemical tank 10, which is exhausted of chemicals, is separated. In this state, the second chemical tank 20 maintains a state in which chemicals are continuously supplied to the semiconductor production apparatus 106.

다음으로 도 6에 도시된 바와 같이, 새로운 화학약품이 저장된 제1약품탱크(10)를 공급시스템(100)에 장착한다. 이 상태에서는 제1약품탱크(10)의 화학약품 유출구로부터 제3-2밸브(144)까지의 배관 내부에는 공기가 차있는 상태가 된다. 여기에 형성된 에어포켓을 제거하지 않으면, 제1약품탱크(10)에 저장된 화학약품을 반도체 생산장치(106)에 공급하는 초기 단계에서 공기가 들어가거나 유체의 흐름에 충격이 발생하게 된다. 따라서 제2약품탱크(20)의 공급이 종료되고, 제1약품탱크(10)로 공급 라인을 전환하기 전에 에어포켓을 제거할 필요가 있다.Next, as shown in FIG. 6, the first chemical tank 10 in which the new chemical is stored is mounted on the supply system 100. In this state, the inside of the pipe from the chemical agent outlet of the first chemical tank 10 to the 3-2 valve 144 is filled with air. If the air pocket formed here is not removed, air enters in the initial stage of supplying the chemicals stored in the first chemical tank 10 to the semiconductor production apparatus 106 or an impact occurs in the flow of the fluid. Therefore, the supply of the second chemical tank 20 is terminated, and it is necessary to remove the air pocket before switching the supply line to the first chemical tank 10.

이하에서는 배관 내부에 형성된 에어포켓을 제거하는 방법을 설명한다.Hereinafter, a method of removing the air pocket formed in the pipe will be described.

도 7은 에어포켓이 형성된 부분을 진공상태로 만드는 과정을 나타낸 연결도이며, 도 8은 진공펌프의 동작을 중단시켜 배관 내부에 진공공간을 유지한 상태를 나타낸 연결도, 도 9는 진공공간 내부에 제1약품탱크에 저장된 화학약품이 흘러들어가도록 하는 상태를 나타낸 연결도이다.7 is a connection diagram showing a process of making a part in which an air pocket is formed in a vacuum state, FIG. 8 is a connection diagram showing a state in which a vacuum space is maintained inside the pipe by stopping the operation of the vacuum pump, and FIG. 9 is inside the vacuum space It is a connection diagram showing the state in which the chemicals stored in the first chemical tank flow in.

먼저 도 7에 도시된 바와 같이, 제1약품탱크(10)를 새로 공급시스템(100)에 장착한 후, 진공펌프(112)를 가동시켜 배관 내부의 공기를 외부로 배출시키면서 내부를 진공 또는 진공에 가까운 상태로 만들어준다. 진공 또는 진공에 가까운 상태가 된 곳을 진공공간이라고 설명한다. 본 발명에서는 제1약품탱크(10)의 화학약품 유출구에서 제4배관(120)에 연결되는 분기점까지의 제3배관(118) 내부에 형성된 에어포켓을 제거하여 진공공간으로 만들 필요가 있다.First, as shown in FIG. 7, after the first chemical tank 10 is newly installed in the supply system 100, the vacuum pump 112 is operated to discharge the air inside the pipe to the outside while vacuuming or vacuuming the inside. It makes it close to. A vacuum or a place close to a vacuum is described as a vacuum space. In the present invention, it is necessary to make a vacuum space by removing the air pocket formed in the third pipe 118 from the chemical outlet of the first chemical tank 10 to the branch point connected to the fourth pipe 120.

진공펌프(112)를 동작시키면서 제8밸브(162)와 제1-2밸브(136), 제1-3밸브(138), 제9밸브(164), 제3-1밸브(143)를 모두 열어준다. 그리고 제1-1밸브(134)와 제3-2밸브(144), 제5-1밸브(150), 제7-2밸브(158)를 모두 닫아준다. 제1-3밸브(138) 및 제3-1밸브(143)는 3개 방향으로 분기되는 분기점의 기능을 하는데, 제1약품탱크(10)와 연결되는 방향으로는 닫아주고, 제9배관(130)으로 연결되는 방향을 열어준다. 따라서 제1약품탱크(10) 내부를 진공으로 만들지는 않게 된다.While operating the vacuum pump 112, all of the 8th valve 162, the 1-2 valve 136, the 1-3 valve 138, the 9th valve 164, and the 3-1 valve 143 Open it. In addition, the 1-1 valve 134, the 3-2 valve 144, the 5-1 valve 150, and the 7-2 valve 158 are all closed. The 1-3 valve 138 and the 3-1 valve 143 function as a branch point branching in three directions, and they close in the direction connected to the first chemical tank 10, and the 9th pipe ( 130). Therefore, the inside of the first chemical tank 10 is not made into a vacuum.

진공펌프(112)의 동작에 의해 충분히 진공공간이 만들어졌다면, 제9밸브(164)를 닫는 것과 동시에 진공펌프(112)의 동작을 중단시킨다. 그리고 제8밸브(162)와 제1-2밸브(136), 제1-3밸브(138)도 함께 닫아준다.If the vacuum space is sufficiently created by the operation of the vacuum pump 112, the operation of the vacuum pump 112 is stopped at the same time as the ninth valve 164 is closed. In addition, the eighth valve 162, the 1-2 valve 136, and the 1-3 valve 138 are also closed.

이렇게 되면 도 8에 도시된 바와 같이, 진공펌프(112)의 동작에 의해 에어포켓 내부에 들어있던 공기는 진공펌프(112) 방향으로 배출되고, 종전에 에어포켓을 형성했던 배관의 내부는 진공공간이 된다.In this case, as shown in FIG. 8, the air contained in the air pocket by the operation of the vacuum pump 112 is discharged toward the vacuum pump 112, and the inside of the pipe that previously formed the air pocket is a vacuum space. Becomes.

마지막으로, 제3-1밸브(143)를 열어서 제1약품탱크(10)의 화학약품 유출구와 제3배관(118)을 개방시키면, 진공공간 내부의 음압에 의해 제1약품탱크(10) 내부의 화학약품이 진공공간 내부로 자연적으로 흘러들어가게 된다.Finally, by opening the 3-1 valve 143 to open the chemical outlet of the first chemical tank 10 and the third pipe 118, the inside of the first chemical tank 10 due to the negative pressure inside the vacuum space Chemicals naturally flow into the vacuum space.

이 상태에서 제2약품탱크(20)의 공급을 중단하고, 제1약품탱크(10)의 공급을 시작하면, 제3-1밸브(143)에서 제3-2밸브(144) 사이에 채워져 있는 화학약품부터 반도체 생산장치(106)로 들어가면서 충격으로 인한 유체의 흐름의 끊김이나 압력의 불안정 현상 없이 화학약품이 원활하게 공급될 수 있다.In this state, if the supply of the second chemical tank 20 is stopped and the supply of the first chemical tank 10 is started, the filling between the 3-1 valve 143 to the 3-2 valve 144 As the chemicals enter the semiconductor production apparatus 106, the chemicals can be smoothly supplied without interruption of the flow of fluid or instability of pressure due to an impact.

이상 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명하였지만, 상술한 본 발명의 기술적 구성은 본 발명이 속하는 기술 분야의 당업자가 본 발명의 그 기술적 사상이나 필수적 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적인 것이 아닌 것으로서 이해되어야 하고, 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 등가 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.Although preferred embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above is another specific form without changing the technical spirit or essential features of the present invention by those skilled in the art. It will be appreciated that it can be implemented with. Therefore, the embodiments described above should be understood as illustrative and non-limiting in all respects, and the scope of the present invention is indicated by the claims to be described later rather than the detailed description, and the meaning and scope of the claims and All changes or modified forms derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

10 : 제1약품탱크 20 : 제2약품탱크
100 : 공급시스템 102 : 제1가압기
104 : 제2가압기 106 : 반도체 생산장치
108 : 퍼지용가압기 110 : 벤트
112 : 진공펌프 114 : 제1배관
116 : 제2배관 118 : 제3배관
120 : 제4배관 122 : 제5배관
124 : 제6배관 126 : 제7배관
128 : 제8배관 130 : 제9배관
132 : 제10배관 134 : 제1-1밸브
136 : 제1-2밸브 138 : 제1-3밸브
140 : 제2-1밸브 142 : 제2-2밸브
143 : 제3-1밸브 144 : 제3-2밸브
145 : 제3-3밸브 146 : 제3-4밸브
148 : 제4밸브 150 : 제5-1밸브
152 : 제5-2밸브 154 : 제6밸브
156 : 제7-1밸브 158 : 제7-2밸브
160 : 제7-3밸브 162 : 제8밸브
164 : 제9밸브 166 : 제10밸브
10: first chemical tank 20: second chemical tank
100: supply system 102: first pressurizer
104: second pressurizer 106: semiconductor production equipment
108: pressurizer for purge 110: vent
112: vacuum pump 114: first pipe
116: second pipe 118: third pipe
120: 4th pipe 122: 5th pipe
124: 6th pipe 126: 7th pipe
128: pipe 8 130: pipe 9
132: No. 10 pipe 134: No. 1-1 valve
136: the 1-2 valve 138: the 1-3 valve
140: 2-1 valve 142: 2-2 valve
143: 3-1 valve 144: 3-2 valve
145: 3-3 valve 146: 3-4 valve
148: fourth valve 150: fifth-1 valve
152: 5-2 valve 154: 6th valve
156: 7-1 valve 158: 7-2 valve
160: 7-3 valve 162: 8 valve
164: 9th valve 166: 10th valve

Claims (4)

반도체 제조를 위해 반도체 생산장치(106)에서 사용되는 화학약품을 공급하는 공급라인의 배관 내부에 남아있는 화학약품이나 이물질을 제거하고, 배관 내부의 에어포켓을 제거하는 공급시스템으로서,
제1가압기(102)와 제1약품탱크(10)의 가스 유입구를 연결하며, 제1-1밸브(134), 제1-2밸브(136), 제1-3밸브(138)가 순차적으로 설치되는 제1배관(114)과;
제2가압기(104)와 제2약품탱크(20)의 가스 유입구를 연결하며, 제2-1밸브(140)와 제2-2밸브(142)가 순차적으로 설치되는 제2배관(116)과;
상기 제1약품탱크(10)의 화학약품 유출구와 상기 제2약품탱크(20)의 화학약품 유출구 사이를 연결하며, 제3-1밸브(143), 제3-2밸브(144), 제3-4밸브(146), 제3-3밸브(145)가 순차적으로 설치되는 제3배관(118)과;
상기 제3-2밸브(144) 및 상기 제3-4밸브(146)의 사이에 형성된 분기점과 상기 반도체 생산장치(106)를 연결하며, 제4밸브(148)과 설치되는 제4배관(120)과;
상기 제1배관(114)에서 상기 제1-1밸브(134) 및 상기 제1-2밸브(136)의 사이와 진공펌프(112)를 연결하며, 제8밸브(162)가 설치되는 제8배관(128)과;
상기 제1-3밸브(138) 및 상기 제3-1밸브(143)를 연결하며, 제9밸브(164)가 설치되는 제9배관(130);을 포함하며,
상기 진공펌프(112)는 상기 제1약품탱크(10)를 장착한 상태에서 상기 제3-1밸브(143) 및 상기 제3-2밸브(144) 사이의 에어포켓에 있는 공기를 외부로 배출시켜 진공공간을 형성하며,
상기 진공펌프(112)를 동작시키면서 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164), 상기 제3-1밸브(143)를 모두 열고, 상기 제1-1밸브(134)와 상기 제3-2밸브(144)를 모두 닫아서 상기 진공공간을 형성하며,
상기 제3배관(118) 중에서 상기 제3-1밸브(143)와 상기 제3-2밸브(144) 사이 배관에 진공공간의 형성이 완료되면, 상기 진공펌프(112)의 동작을 중단시키고, 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164), 상기 제3-1밸브(143)를 닫아주며,
상기 진공공간의 형성이 완료되면, 화학약품이 채워진 제1약품탱크(10)를 장착하고, 상기 제3-1밸브(143)를 열어서 상기 제3배관(118)에 형성된 진공공간 내부의 음압에 의해 상기 제1약품탱크(10) 내부의 화학약품이 상기 제3배관(118) 내부로 흘러들어가는 것을 특징으로 하는, 에어포켓 제거 기능을 갖는 화학약품 공급시스템.
As a supply system that removes chemicals or foreign substances remaining inside the pipes of the supply line that supplies chemicals used in the semiconductor production device 106 for semiconductor manufacturing, and removes air pockets inside the pipes,
The first pressurizer 102 and the gas inlet of the first chemical tank 10 are connected, and the 1-1 valve 134, the 1-2 valve 136, and the 1-3 valve 138 are sequentially A first pipe 114 to be installed;
The second pipe 116 which connects the gas inlet of the second pressurizer 104 and the second chemical tank 20, and the 2-1 valve 140 and the 2-2 valve 142 are sequentially installed, ;
A connection between the chemical outlet of the first chemical tank 10 and the chemical outlet of the second chemical tank 20, and the 3-1 valve 143, the 3-2 valve 144, and the third A third pipe 118 in which the -4 valve 146 and the 3-3 valve 145 are sequentially installed;
A fourth pipe 120 that connects the semiconductor production device 106 to a branch point formed between the 3-2 valve 144 and the 3-4 valve 146, and is installed with the fourth valve 148 )and;
The first pipe 114 connects the vacuum pump 112 between the 1-1 valve 134 and the 1-2 valve 136, and an eighth valve 162 is installed. A pipe 128;
Including; a ninth pipe 130 connecting the 1-3 valve 138 and the 3-1 valve 143 and in which the ninth valve 164 is installed,
The vacuum pump 112 discharges air in the air pocket between the 3-1 valve 143 and the 3-2 valve 144 to the outside while the first chemical tank 10 is mounted. To form a vacuum space,
While operating the vacuum pump 112, the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, the ninth valve 164, the 3-1 The vacuum space is formed by opening all the valves 143 and closing both the 1-1 valve 134 and the 3-2 valve 144,
When the formation of a vacuum space in the pipe between the 3-1 valve 143 and the 3-2 valve 144 among the third pipe 118 is completed, the operation of the vacuum pump 112 is stopped, Closes the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, the ninth valve 164, and the 3-1 valve 143,
When the formation of the vacuum space is completed, the first chemical tank 10 filled with chemicals is mounted, and the 3-1 valve 143 is opened to reduce the negative pressure inside the vacuum space formed in the third pipe 118. A chemical supply system having an air pocket removal function, characterized in that the chemicals inside the first chemical tank 10 flow into the third pipe 118.
삭제delete 삭제delete 제1항의 공급시스템을 이용한 공급방법으로서,
화학약품이 저장된 상기 제1약품탱크(10)를 장착하는 제1단계와;
상기 진공펌프(112)를 동작시키면서 상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138), 상기 제9밸브(164), 상기 제3-1밸브(143)를 열어주는 제2단계와;
상기 제1-1밸브(134)와 상기 제3-2밸브(144)를 닫아주는 제3단계와;
상기 에어포켓에 저장된 공기가 배출되고 제3배관(118) 중에서 상기 제3-1밸브(143)와 제3-2밸브(144) 사이 배관에 진공공간이 형성되면, 상기 제9밸브(164)를 닫는 것과 동시에 상기 진공펌프(112)의 동작을 중단시키는 제4단계와;
상기 제8밸브(162), 상기 제1-2밸브(136), 상기 제1-3밸브(138)와, 상기 제3-1밸브(143)를 닫아주는 제5단계와;
상기 제3-1밸브(143)를 열어서 상기 제1약품탱크(10)에 저장된 화학약품이 상기 진공공간 내부의 음압에 의해 상기 제3배관(118) 내부로 흘러들어가게 하는 제6단계;를 포함하는, 에어포켓 제거 기능을 갖는 화학약품 공급방법.
As a supply method using the supply system of claim 1,
A first step of mounting the first chemical tank 10 in which chemicals are stored;
While operating the vacuum pump 112, the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, the ninth valve 164, the 3-1 A second step of opening the valve 143;
A third step of closing the 1-1 valve 134 and the 3-2 valve 144;
When the air stored in the air pocket is discharged and a vacuum space is formed in the pipe between the 3-1 valve 143 and the 3-2 valve 144 among the third pipe 118, the ninth valve 164 A fourth step of stopping the operation of the vacuum pump 112 at the same time as closing the valve;
A fifth step of closing the eighth valve 162, the 1-2 valve 136, the 1-3 valve 138, and the 3-1 valve 143;
A sixth step of opening the 3-1 valve 143 so that the chemicals stored in the first chemical tank 10 flow into the third pipe 118 by the negative pressure inside the vacuum space; A method of supplying chemicals with an air pocket removal function.
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KR20220119942A (en) * 2021-02-22 2022-08-30 주식회사 레이크머티리얼즈 Apparatus and method for supplying organometallic compound
KR20230171668A (en) 2022-06-14 2023-12-21 주식회사 에스이지 System of auto flushing for semiconductor equipment

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