KR102589399B1 - Chemical supply system for manufacturing semi-conductor with controlling pressure in vent line - Google Patents
Chemical supply system for manufacturing semi-conductor with controlling pressure in vent line Download PDFInfo
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- KR102589399B1 KR102589399B1 KR1020210038485A KR20210038485A KR102589399B1 KR 102589399 B1 KR102589399 B1 KR 102589399B1 KR 1020210038485 A KR1020210038485 A KR 1020210038485A KR 20210038485 A KR20210038485 A KR 20210038485A KR 102589399 B1 KR102589399 B1 KR 102589399B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B67—OPENING, CLOSING OR CLEANING BOTTLES, JARS OR SIMILAR CONTAINERS; LIQUID HANDLING
- B67D—DISPENSING, DELIVERING OR TRANSFERRING LIQUIDS, NOT OTHERWISE PROVIDED FOR
- B67D7/00—Apparatus or devices for transferring liquids from bulk storage containers or reservoirs into vehicles or into portable containers, e.g. for retail sale purposes
- B67D7/02—Apparatus or devices for transferring liquids from bulk storage containers or reservoirs into vehicles or into portable containers, e.g. for retail sale purposes for transferring liquids other than fuel or lubricants
- B67D7/0238—Apparatus or devices for transferring liquids from bulk storage containers or reservoirs into vehicles or into portable containers, e.g. for retail sale purposes for transferring liquids other than fuel or lubricants utilising compressed air or other gas acting directly or indirectly on liquids in storage containers
- B67D7/0266—Apparatus or devices for transferring liquids from bulk storage containers or reservoirs into vehicles or into portable containers, e.g. for retail sale purposes for transferring liquids other than fuel or lubricants utilising compressed air or other gas acting directly or indirectly on liquids in storage containers by gas acting directly on the liquid
- B67D7/0272—Apparatus or devices for transferring liquids from bulk storage containers or reservoirs into vehicles or into portable containers, e.g. for retail sale purposes for transferring liquids other than fuel or lubricants utilising compressed air or other gas acting directly or indirectly on liquids in storage containers by gas acting directly on the liquid specially adapted for transferring liquids of high purity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Abstract
본 발명은 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템에 관한 것으로서, 보다 상세하게는 반도체 제조를 위해 증착챔버에서 사용되는 화학약품을 공급탱크에 이송하는 과정에서 벤트배관을 통해 배출되는 불활성 가스의 압력 변화량을 일정 수준 이하로 유지하도록 하는 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템에 관한 것이다.
본 발명에 따르면 공급탱크에 화학약품을 충전하기 위한 과정에서 공급탱크 내부의 압력이 일정한 기준범위 내에서 변화되도록 하여 화학약품의 충전량을 정확하게 제어할 수 있는 효과가 있다.The present invention relates to a chemical supply system for semiconductor manufacturing that controls the pressure of the vent pipe. More specifically, the inert chemical discharged through the vent pipe during the process of transferring chemicals used in the deposition chamber for semiconductor manufacturing to the supply tank. This relates to a chemical supply system for semiconductor manufacturing that controls the pressure of the vent pipe to maintain the change in gas pressure below a certain level.
According to the present invention, in the process of charging chemicals into the supply tank, the pressure inside the supply tank is changed within a certain standard range, which has the effect of accurately controlling the amount of chemicals charged.
Description
본 발명은 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템에 관한 것으로서, 보다 상세하게는 반도체 제조를 위해 증착챔버에서 사용되는 화학약품을 공급탱크에 이송하는 과정에서 벤트배관을 통해 배출되는 불활성 가스의 압력 변화량을 일정 수준 이하로 유지하도록 하는 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템에 관한 것이다.The present invention relates to a chemical supply system for semiconductor manufacturing that controls the pressure of the vent pipe. More specifically, the inert chemical discharged through the vent pipe during the process of transferring chemicals used in the deposition chamber for semiconductor manufacturing to the supply tank. This relates to a chemical supply system for semiconductor manufacturing that controls the pressure of the vent pipe to maintain the change in gas pressure below a certain level.
반도체, LED, Solar Cell 등의 제조공정 중의 하나인 에피텍시(epitaxy) 공정은 단결정실리콘 위에 각종 반도체 관련 재료들을 올려놓기 위해 일종의 얇은 필름으로 실리콘의 표면을 덮는 코팅공정이다. 각 재료들이 특정 위치에 정확히 위치할 수 있도록 기초공사를 하는 것으로서, 일반적인 선택적 에피텍시 성장법은 반도체물질이 노출된 표면에만 그와 동종 또는 이종의 반도체막이 성장되고, 산화막, 질화막 등의 절연막으로 덮여 있는 표면에 는 아무런 막도 성장되지 않도록 하는 기술이다.The epitaxy process, one of the manufacturing processes for semiconductors, LEDs, solar cells, etc., is a coating process that covers the surface of silicon with a thin film in order to place various semiconductor-related materials on single crystal silicon. The general selective epitaxial growth method involves laying the groundwork so that each material can be positioned accurately at a specific location. In the general selective epitaxy growth method, a semiconductor film of the same or different type is grown only on the surface where the semiconductor material is exposed, and an insulating film such as an oxide film or nitride film is grown. This is a technology that prevents any film from growing on the covered surface.
특수가스를 활용해 화학적으로 코팅물질을 증착시킨다 하여 대개 CVD(Chemical Vapor Deposition)공정으로 불린다.It is usually called the CVD (Chemical Vapor Deposition) process because it deposits coating materials chemically using a special gas.
구체적으로 에피텍시 공정은 낮은 압력에서 특수가스와의 화학반응을 통해 증착시키는 LPCVD(Low Pressure CVD), 일반대기압에서 증착시키는 APCVD(Atmospheric Pressure CVD), 고압에서 증착시키는 HPCVD(High Pressure CVD), 강력한 전압으로 플라즈마를 발생시켜 증착시키는 PECVD(Plasma Enhanced CVD), 갈륨, 인, 알루미늄 등 금속유기물을 증착시키는 MOCVD(금속유기화학기상증착) 등으로 구분된다.Specifically, the epitaxy process includes LPCVD (Low Pressure CVD), which deposits through a chemical reaction with a special gas at low pressure, APCVD (Atmospheric Pressure CVD), which deposits at normal atmospheric pressure, and HPCVD (High Pressure CVD), which deposits at high pressure. It is divided into PECVD (Plasma Enhanced CVD), which deposits by generating plasma with a strong voltage, and MOCVD (Metal Organic Chemical Vapor Deposition), which deposits metal organic materials such as gallium, phosphorus, and aluminum.
이 공정에는 고순도 TEOS, TiCL4, TMA, LTO520, TEMAZr, TEMAHf, HBO, 4MS, 3MS, TEB, TEPO 등의 화학약품(특수 약액)이 사용되며 운송가스(carrier gas)로서 고순도의 아르곤(Ar), 헬륨(He), 수소(H2), 질소(N2) 등이 사용된다.In this process, chemicals (special chemicals) such as high-purity TEOS, TiCL4, TMA, LTO520, TEMAZr, TEMAHf, HBO, 4MS, 3MS, TEB, and TEPO are used, and high-purity argon (Ar) is used as a carrier gas. Helium (He), hydrogen (H2), nitrogen (N2), etc. are used.
아르곤과 같은 운송가스의 압력을 이용한 펌프로 증착용 화학약품에 추진력을 가하여 화학약품이 이동하도록 하는 방법을 사용한다.A method is used to apply driving force to the chemicals for deposition using a pump using the pressure of a transport gas such as argon to move the chemicals.
화학약품은 반도체 제조공정에서 공급이 중단되거나 공급량이 급격히 변화하는 등의 변화가 생기지 않도록 할 필요가 있으며, 이를 위해 화학약품을 공급하는 탱크와 빈 탱크에 화학약품을 충전하는 탱크를 동시에 사용하고 있다.It is necessary to prevent changes such as supply interruption or sudden changes in supply of chemicals during the semiconductor manufacturing process, and for this purpose, tanks that supply chemicals and tanks that fill empty tanks with chemicals are used simultaneously. .
도 1은 종래기술에 따른 화학약품 공급시스템의 구조를 나타낸 연결도이며, 도 2는 공급탱크에 화학약품을 충전하는 과정에서 벤트배관을 통해 압력을 조절하는 구조를 나타낸 연결도, 도 3은 공급탱크 내부의 압력의 변화량을 나타낸 그래프이다.Figure 1 is a connection diagram showing the structure of a chemical supply system according to the prior art, Figure 2 is a connection diagram showing the structure of controlling pressure through a vent pipe in the process of filling chemicals in the supply tank, and Figure 3 is a supply diagram. This is a graph showing the change in pressure inside the tank.
일반적인 화학약품 공급시스템(100)에는 화학약품을 증착챔버(10)에 공급하는 공급탱크(102)와, 공급탱크(102)의 저장량이 줄어든 경우에 화학약품을 공급하여 충전하는 충전탱크(104)가 구비된다.A general chemical supply system 100 includes a supply tank 102 that supplies chemicals to the deposition chamber 10, and a charging tank 104 that supplies and fills chemicals when the storage volume of the supply tank 102 decreases. is provided.
공급탱크(102)와 충전탱크(104)에 저장된 화학약품을 이송하기 위해서는 운송을 위한 가스를 공급하는 수단이 사용되는데, 운송가스공급장치(106)는 배관을 통해 공급탱크(102) 및 충전탱크(104)에 고압의 운송가스를 주입한다. 운송가스의 압력에 의해 화학약품이 배관을 통해 배출되어 이송된다.In order to transfer the chemicals stored in the supply tank 102 and the filling tank 104, a means of supplying gas for transportation is used. The transport gas supply device 106 is connected to the supply tank 102 and the filling tank through piping. Inject high-pressure transport gas into (104). Chemicals are discharged and transported through pipes by the pressure of the transport gas.
운송가스공급장치(106)에는 운송가스공급배관(108)이 연결되며, 운송가스공급배관(108)은 제1운송가스공급배관(108a)과 제2운송가스공급배관(108b)으로 분기된다. 제1운송가스공급배관(108a)은 공급탱크(102)에 연결되며, 제2운송가스공급배관(108b)은 충전탱크(104)에 연결된다. 제1운송가스공급배관(108a)과 제2운송가스공급배관(108b)은 각각 공급탱크(102)와 충전탱크(104)에 운송가스를 이송시킨다.A transport gas supply pipe 108 is connected to the transport gas supply device 106, and the transport gas supply pipe 108 branches into a first transport gas supply pipe 108a and a second transport gas supply pipe 108b. The first transport gas supply pipe 108a is connected to the supply tank 102, and the second transport gas supply pipe 108b is connected to the filling tank 104. The first transport gas supply pipe 108a and the second transport gas supply pipe 108b transfer transport gas to the supply tank 102 and the filling tank 104, respectively.
공급탱크(102)와 증착챔버(10)는 화학약품공급배관(110)으로 연결되며, 이를 통해 반도체 제조용 화학약품이 이송된다.The supply tank 102 and the deposition chamber 10 are connected to the chemical supply pipe 110, through which chemicals for semiconductor manufacturing are transferred.
공급탱크(102)와 충전탱크(104)는 화학약품충전배관(112)으로 연결된다. 이를 통해 화학약품이 충전탱크(104)에서 공급탱크(102)로 이송되면서 공급탱크(102)가 다시 충전된다.The supply tank 102 and the charging tank 104 are connected to the chemical charging pipe 112. Through this, chemicals are transferred from the filling tank 104 to the supply tank 102, and the supply tank 102 is recharged.
제1운송가스공급배관(108a)과 제2운송가스공급배관(108b)에는 각각 제1밸브(114)와 제3밸브(118)가 설치된다. 제1밸브(114)는 공급탱크(102)로부터 화학약품을 증착챔버(10)에 공급하기 위해 개방되어 운송가스가 공급탱크(102)의 내부로 이송되도록 한다.A first valve 114 and a third valve 118 are installed in the first transport gas supply pipe 108a and the second transport gas supply pipe 108b, respectively. The first valve 114 is opened to supply chemicals from the supply tank 102 to the deposition chamber 10 to allow transport gas to be transferred into the inside of the supply tank 102.
화학약품공급배관(110)에는 제2밸브(116)가 설치된다. 제2밸브(116)가 개방된 상태에서 화학약품이 공급탱크(102)로부터 증착챔버(10)로 이송된다.A second valve 116 is installed in the chemical supply pipe 110. With the second valve 116 open, chemicals are transferred from the supply tank 102 to the deposition chamber 10.
화학약품충전배관(112)에는 제4밸브(120)가 설치된다. 충전탱크(104)에서 공급탱크(102)로 화학약품을 충전하기 위해서 제3밸브(118)가 열리면서 운송가스가 충전탱크(104)의 내부로 이송된다. 그리고 제4밸브(220)가 열리면서 화학약품이 화학약품충전배관(112)을 통해 이송되어 공급탱크(102)의 내부로 유입된다.A fourth valve 120 is installed in the chemical charging pipe 112. In order to charge chemicals from the filling tank 104 to the supply tank 102, the third valve 118 is opened and the transport gas is transferred into the filling tank 104. Then, as the fourth valve 220 opens, the chemical is transferred through the chemical charging pipe 112 and flows into the supply tank 102.
화학약품의 충전 상태에서는 제1밸브(114)와 제2밸브(116)가 닫힌다. 그러나 공급탱크(102)에 화학약품을 충전하면서 동시에 증착챔버(10)에 화학약품을 공급하는 경우에는 제2밸브(116)가 열려있게 된다.In the chemical charging state, the first valve 114 and the second valve 116 are closed. However, when chemicals are supplied to the deposition chamber 10 while filling the supply tank 102 with chemicals, the second valve 116 is opened.
공급탱크(100)에는 벤트배관(122)의 일단이 연결되며, 벤트배관(122)의 타단은 벤트펌프(20)에 연결된다. 그리고 벤트배관(122)에는 제5밸브(124)가 설치된다.One end of the vent pipe 122 is connected to the supply tank 100, and the other end of the vent pipe 122 is connected to the vent pump 20. And a fifth valve 124 is installed in the vent pipe 122.
운송가스는 일정한 압력으로 충전탱크(104)에 공급되면서 화학약품을 공급탱크(102)에 이송한다. 그런데 공급탱크(102) 내부의 압력이 설정된 펄스벤트압력 이상일 경우에는 제어부가 제5밸브(124)를 개방하여 공급탱크(102) 내부의 공기를 벤트배관(122)을 통해 외부로 배출시킨다. 이렇게 하여야만 일정한 압력으로 화학약품이 이송되면서 공급탱크(102) 내부에 정확한 양의 화학약품이 충전될 수 있다.Transport gas is supplied to the filling tank 104 at a constant pressure and transfers chemicals to the supply tank 102. However, when the pressure inside the supply tank 102 is higher than the set pulse vent pressure, the control unit opens the fifth valve 124 to discharge the air inside the supply tank 102 to the outside through the vent pipe 122. Only in this way can the chemicals be transferred at a constant pressure and fill the inside of the supply tank 102 with an accurate amount of chemicals.
그런데, 공급탱크(102) 내부의 압력은 제5밸브(124)의 개폐시에 급격한 변화가 생기면서 균일한 압력을 유지할 수 없는 상태가 되기도 한다. 도 3에 도시된 바와 같이, 제5밸브(124)의 개폐시에 발생하는 압력의 변화로 인해 공급탱크(102) 내부로 일정한 양의 화학약품의 공급이 어려워지고, 이로 인해 정확한 화학약품의 잔량을 감지할 수 없는 문제가 생긴다.However, the pressure inside the supply tank 102 changes rapidly when the fifth valve 124 is opened and closed, making it impossible to maintain a uniform pressure. As shown in FIG. 3, it becomes difficult to supply a certain amount of chemicals into the supply tank 102 due to changes in pressure that occur when opening and closing the fifth valve 124, which makes it difficult to supply the exact amount of chemicals remaining. A problem arises where it cannot be detected.
전술한 문제점을 해결하기 위한 본 발명은 공급탱크 내부에 화학약품을 이송하여 충전하는 과정에서 공급탱크 내부의 압력을 제어하기 위한 벤트배관의 밸브를 복수개 설치하고, 벤트 과정에서 밸브를 순차적으로 개폐하여 압력의 급격한 변화를 방지하도록 하는 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템을 제공하는 것을 목적으로 한다.The present invention to solve the above-described problems installs a plurality of valves in the vent pipe to control the pressure inside the supply tank during the process of transferring and charging chemicals inside the supply tank, and sequentially opens and closes the valves during the venting process. The purpose is to provide a chemical supply system for semiconductor manufacturing that controls the pressure of the vent pipe to prevent sudden changes in pressure.
전술한 문제점을 해결하기 위해 안출된 본 발명은 반도체 제조를 위해 증착챔버(10)에서 사용되는 증착용 화학약품을 공급하고, 내부의 불활성 가스를 벤트펌프(20)를 통해 외부로 배출시키기 위한 공급시스템으로서, 상기 화학약품을 상기 증착챔버(10)에 공급하는 공급탱크(202)와; 충전을 위해 상기 공급탱크(202)에 화학약품을 공급하는 충전탱크(204)와; 상기 화학약품의 이송을 위한 운송가스를 공급하는 운송가스공급장치(206)와; 일단이 상기 운송가스공급장치(206)에 연결되며, 분기된 제1운송가스공급배관(208a) 및 제2운송가스공급배관(208b)의 타단은 상기 공급탱크(202) 및 상기 충전탱크(204)에 각각 연결되는 운송가스공급배관(208)과; 상기 제1운송가스공급배관(208a)에 설치되는 제1밸브(216)와; 상기 제2운송가스공급배관(208b)에 설치되는 제3밸브(218)와; 상기 공급탱크(202)와 상기 증착챔버(10) 사이에 설치되는 화학약품공급배관(210)과; 상기 화학약품공급배관(210)에 설치되는 제2밸브(216)와; 상기 공급탱크(202)와 상기 충전탱크(204) 사이에 설치되는 화학약품충전배관(212)과; 상기 화학약품충전배관(212)에 설치되는 제4밸브(220)와; 상기 벤트펌프(20)와 상기 공급탱크(202) 사이에 설치되는 벤트배관(222)과; 상기 벤트배관(222)에서 상기 벤트펌프(20)와 상기 공급탱크(202) 사이에 설치되는 제5밸브(224)와; 상기 벤트배관(222)에서 상기 벤트펌프(20)와 상기 제5밸브(224) 사이에 설치되는 제6밸브(226);를 포함하며, 제어부는 상기 공급탱크(202) 내부의 불활성 가스를 상기 벤트펌프(20)로 배출시키기위해 상기 제5밸브(224)와 상기 제6밸브(226)를 순차적으로 열었다가 닫도록 제어하는 것을 특징으로 한다.The present invention, which was devised to solve the above-described problems, supplies deposition chemicals used in the deposition chamber 10 for semiconductor manufacturing and discharges the internal inert gas to the outside through the vent pump 20. A system comprising: a supply tank (202) supplying the chemical to the deposition chamber (10); a filling tank 204 that supplies chemicals to the supply tank 202 for charging; a transport gas supply device 206 that supplies transport gas for transporting the chemicals; One end is connected to the transport gas supply device 206, and the other ends of the branched first transport gas supply pipe 208a and the second transport gas supply pipe 208b are connected to the supply tank 202 and the filling tank 204. ) and transportation gas supply pipes 208 respectively connected to each other; a first valve 216 installed in the first transport gas supply pipe 208a; A third valve 218 installed in the second transport gas supply pipe 208b; a chemical supply pipe 210 installed between the supply tank 202 and the deposition chamber 10; A second valve 216 installed in the chemical supply pipe 210; a chemical charging pipe 212 installed between the supply tank 202 and the charging tank 204; A fourth valve 220 installed in the chemical charging pipe 212; a vent pipe 222 installed between the vent pump 20 and the supply tank 202; a fifth valve 224 installed between the vent pump 20 and the supply tank 202 in the vent pipe 222; It includes a sixth valve 226 installed between the vent pump 20 and the fifth valve 224 in the vent pipe 222, and the control unit controls the inert gas inside the supply tank 202. It is characterized by controlling the fifth valve 224 and the sixth valve 226 to open and close sequentially in order to discharge the air to the vent pump 20.
제어부는 벤트 동작을 위해 상기 벤트펌프(20)를 작동시킨 상태에서 상기 제5밸브(224)를 열어주는 제1동작과, 상기 제5밸브(224)를 닫으면서 제6밸브(226)를 열어주는 제2동작을 순차적으로 실행하는 것을 특징으로 한다.The control unit performs a first operation of opening the fifth valve 224 while operating the vent pump 20 for vent operation, and opening the sixth valve 226 while closing the fifth valve 224. The main feature is that the second operation is sequentially executed.
상기 제어부는 상기 제2동작에서 상기 제6밸브(226)를 열어준 후 소정의 시간이 경과한 후에 상기 제5밸브(224)를 닫도록 제어하는 것을 특징으로 한다.The control unit is characterized in that it controls the fifth valve 224 to close after a predetermined time has elapsed after opening the sixth valve 226 in the second operation.
본 발명에 따르면 공급탱크에 화학약품을 충전하기 위한 과정에서 공급탱크 내부의 압력이 일정한 기준범위 내에서 변화되도록 하여 화학약품의 충전량을 정확하게 제어할 수 있는 효과가 있다.According to the present invention, in the process of charging chemicals into the supply tank, the pressure inside the supply tank is changed within a certain standard range, which has the effect of accurately controlling the amount of chemicals charged.
도 1은 종래기술에 따른 화학약품 공급시스템의 구조를 나타낸 연결도.
도 2는 공급탱크에 화학약품을 충전하는 과정에서 벤트배관을 통해 압력을 조절하는 구조를 나타낸 연결도.
도 3은 공급탱크 내부의 압력의 변화량을 나타낸 그래프.
도 4는 본 발명의 실시예에 따른 화학약품 공급시스템의 구조를 나타낸 연결도.
도 5는 제5밸브의 연결부위까지 불활성 가스가 배출된 상태를 나타낸 연결도.
도 6은 제6밸브를 통과해서 불활성 가스가 벤트펌프로 배출되는 상태를 나타낸 연결도.
도 7은 제5밸브와 제6밸브 사이에 불활성 가스가 일시적으로 머물고 있는 상태를 나타낸 연결도.Figure 1 is a connection diagram showing the structure of a chemical supply system according to the prior art.
Figure 2 is a connection diagram showing a structure for controlling pressure through a vent pipe in the process of filling chemicals in a supply tank.
Figure 3 is a graph showing the amount of change in pressure inside the supply tank.
Figure 4 is a connection diagram showing the structure of a chemical supply system according to an embodiment of the present invention.
Figure 5 is a connection diagram showing the state in which inert gas is discharged to the connection part of the fifth valve.
Figure 6 is a connection diagram showing the state in which inert gas passes through the sixth valve and is discharged to the vent pump.
Figure 7 is a connection diagram showing a state in which inert gas temporarily remains between the fifth and sixth valves.
이하에서 도면을 참조하여 본 발명의 실시예에 따른 "벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템"(이하, '공급시스템'이라 함)을 설명한다.Hereinafter, a "chemical supply system for semiconductor manufacturing that controls the pressure of a vent pipe" (hereinafter referred to as 'supply system') according to an embodiment of the present invention will be described with reference to the drawings.
도 4는 본 발명의 실시예에 따른 화학약품 공급시스템의 구조를 나타낸 연결도이며, 도 5는 제5밸브의 연결부위까지 불활성 가스가 배출된 상태를 나타낸 연결도, 도 6은 제6밸브를 통과해서 불활성 가스가 벤트펌프로 배출되는 상태를 나타낸 연결도, 도 7은 제5밸브와 제6밸브 사이에 불활성 가스가 일시적으로 머물고 있는 상태를 나타낸 연결도이다.Figure 4 is a connection diagram showing the structure of a chemical supply system according to an embodiment of the present invention, Figure 5 is a connection diagram showing the state in which inert gas is discharged to the connection part of the fifth valve, and Figure 6 is a connection diagram showing the sixth valve. Figure 7 is a connection diagram showing the state in which the inert gas passes through and is discharged to the vent pump. Figure 7 is a connection diagram showing the state in which the inert gas is temporarily staying between the fifth and sixth valves.
본 발명의 공급시스템(200)은 전술한 종래기술의 공급시스템(100)의 구성요소와 동일하며, 탱크와 배관, 밸브의 설치 상태도 동일하다. 다만, 벤트배관(222)에 설치되는 밸브의 수가 달라지며, 각 밸브의 개폐 순서를 변화시켜 일정한 압력을 유지할 수 있도록 한다.The supply system 200 of the present invention has the same components as the supply system 100 of the prior art described above, and the installation state of the tank, piping, and valves is also the same. However, the number of valves installed in the vent pipe 222 varies, and the opening and closing order of each valve is changed to maintain a constant pressure.
공급시스템(200)에는 종래기술에서와 같이 공급탱크(202)와 충전탱크(204)가 구비되어 화학약품을 증착챔버(10)에 공급하거나 공급탱크(202)에 화학약품을 충전한다.The supply system 200 is equipped with a supply tank 202 and a filling tank 204 as in the prior art to supply chemicals to the deposition chamber 10 or fill the supply tank 202 with chemicals.
또한 운송가스공급장치(206)에 운송가스공급배관(208)의 일단이 연결되며, 분기된 제1운송가스공급배관(208a) 및 제2운송가스공급배관(208b)의 타단은 각각 공급탱크(202) 및 충전탱크(204)에 연결된다. 그리고 제1운송가스공급배관(208a) 및 제2운송가스공급배관(208b)에는 제1밸브(214) 및 제3밸브(218)가 각각 설치되어 화학약품의 공급 및 충전 동작에서 개방되거나 폐쇄된다.In addition, one end of the transport gas supply pipe 208 is connected to the transport gas supply device 206, and the other ends of the branched first transport gas supply pipe 208a and the second transport gas supply pipe 208b are each connected to a supply tank ( 202) and the charging tank 204. In addition, a first valve 214 and a third valve 218 are installed in the first transport gas supply pipe 208a and the second transport gas supply pipe 208b, respectively, and are opened or closed during chemical supply and charging operations. .
공급탱크(202)와 증착챔버(10) 사이에는 화학약품공급배관(210)이 설치되며, 이 배관에는 제2밸브(216)가 설치된다.A chemical supply pipe 210 is installed between the supply tank 202 and the deposition chamber 10, and a second valve 216 is installed in this pipe.
공급탱크(202)와 충전탱크(204) 사이에는 화학약품충전배관(212)이 연결되며, 이 배관에는 제4밸브(220)가 설치되어 충전 동작에서 열리게 된다.A chemical charging pipe 212 is connected between the supply tank 202 and the charging tank 204, and a fourth valve 220 is installed in this pipe and opens during the charging operation.
또한 벤트펌프(20)와 공급탱크(202) 사이에는 벤트배관(222)이 연결되며, 벤트배관(222)에는 제5밸브(224)와 제6밸브(226)가 설치된다. 본 발명에서는 공급탱크(202)에 가까운 것을 제5밸브(224)라고 하고, 벤트펌프(20)에 가까운 것을 제6밸브(226)라고 한다. 제5밸브(224)와 제6밸브(226) 사이의 거리는 비교적 짧은 것이 바람직하며, 공기의 이동과 압력의 분포가 균일해지도록 하기 위해 적절한 거리를 정할 필요가 있다. 실제 배관에서는 수 ㎝ 내지 수십 ㎝ 정도의 거리를 갖는 것이 일반적이다.Additionally, a vent pipe 222 is connected between the vent pump 20 and the supply tank 202, and a fifth valve 224 and a sixth valve 226 are installed in the vent pipe 222. In the present invention, the one close to the supply tank 202 is called the fifth valve 224, and the one close to the vent pump 20 is called the sixth valve 226. It is preferable that the distance between the fifth valve 224 and the sixth valve 226 is relatively short, and an appropriate distance needs to be set to ensure uniform movement of air and distribution of pressure. In actual piping, it is common to have a distance of several centimeters to tens of centimeters.
제어부는 공급탱크(202) 내부의 화학약품의 잔량이 일정 수준 이하일 경우에는 제1밸브(214)와 제2밸브(216)를 닫고, 제3밸브(218)와 제4밸브(220)를 연 상태에서 운송가스공급장치(206)를 작동시켜 화학약품이 충전탱크(204)에서 공급탱크(202)로 이송되도록 한다.If the remaining amount of chemicals in the supply tank 202 is below a certain level, the control unit closes the first valve 214 and the second valve 216 and opens the third valve 218 and the fourth valve 220. In this state, the transport gas supply device 206 is operated to transfer chemicals from the filling tank 204 to the supply tank 202.
충전 과정에서 공급탱크(202) 내부의 압력이 정해진 수준 이상으로 올라가면 벤트펌프(20)를 작동시켜 공급탱크(202) 내부의 압력을 낮춰준다.During the charging process, when the pressure inside the supply tank 202 rises above a set level, the vent pump 20 is operated to lower the pressure inside the supply tank 202.
벤트 동작시에 제어부는 순차적으로 밸브를 열어서 압력의 급격한 변화가 생기지 않도록 한다.When the vent operates, the control unit opens the valves sequentially to prevent sudden changes in pressure.
먼저, 도 5에 도시된 바와 같이, 제어부는 벤트 동작을 위해 벤트펌프(20)를 작동시킨 상태에서 제5밸브(224)를 열어준다.(제1동작) 공급탱크(202) 내부의 공기(기타 증기 포함)는 벤트배관(222)의 내부로 유입되어 제5밸브(224)의 앞쪽까지 이동한다. 공급탱크(202)와 제5밸브(224)까지의 거리는 비교적 가깝기 때문에 공급탱크(202)의 내부에서 빠져나오는 불활성 가스의 양은 작을 것이다. 따라서 공급탱크(202) 내부의 압력의 변화는 크지 않다.First, as shown in FIG. 5, the control unit opens the fifth valve 224 while operating the vent pump 20 for vent operation (first operation). The air inside the supply tank 202 ( Other vapors (including other vapors) flow into the vent pipe 222 and move to the front of the fifth valve 224. Since the distance between the supply tank 202 and the fifth valve 224 is relatively close, the amount of inert gas escaping from the inside of the supply tank 202 will be small. Therefore, the change in pressure inside the supply tank 202 is not large.
다음으로, 도 6에 도시된 바와 같이, 제어부는 제5밸브(224)를 닫음과 동시에 제6밸브(226)를 열어준다.(제2동작) 그러면 공급탱크(202)와 제5밸브(224) 사이에 남아있던 불활성 가스가 제6밸브(226)를 통과하여 벤트펌프(20)로 이동한다. 불활성 가스의 원활한 이동을 위해 제6밸브(226)를 먼저 열면서 짧은 시간 후에 제5밸브(224)를 닫도록 제어할 수도 있을 것이다.Next, as shown in FIG. 6, the control unit closes the fifth valve 224 and simultaneously opens the sixth valve 226 (second operation). Then, the supply tank 202 and the fifth valve 224 ) The inert gas remaining passes through the sixth valve 226 and moves to the vent pump 20. For smooth movement of the inert gas, the sixth valve 226 may be opened first and the fifth valve 224 may be controlled to close after a short period of time.
그리고 제어부는 제6밸브(226)를 닫음과 동시에 다시 제5밸브(224)를 열어서 불활성 가스가 벤트배관(222) 내부로 이동하도록 한다. 이 경우에도 제6밸브(226)를 닫은 후 짧은 시간이 경과한 후에 제5밸브(224)를 열도록 제어할 수도 있을 것이다.And the control unit closes the sixth valve 226 and simultaneously opens the fifth valve 224 again to allow the inert gas to move into the vent pipe 222. In this case as well, it may be possible to control the fifth valve 224 to be opened a short time after the sixth valve 226 is closed.
이와 같이, 제5밸브(224)와 제6밸브(226)를 순차적으로 열고 닫는 동작을 반복함으로써 불활성 가스가 조금씩 벤트펌프(20)로 배출되도록 하여 압력의 급격한 변화없이 벤트 동작이 이루어진다.In this way, by repeating the sequential opening and closing operation of the fifth valve 224 and the sixth valve 226, the inert gas is gradually discharged to the vent pump 20, thereby performing the vent operation without a sudden change in pressure.
한편, 도 7은 제5밸브(224)를 닫음과 동시에 제6밸브(226)을 열지 않고, 일정한 시간만큼 차이를 두어서 밸브를 열고 닫도록 하는 과정을 나타낸다. 즉, 불활성 가스가 공급탱크(202)와 제5밸브(224) 사이에 들어온 상태에서 제5밸브(224)만 열었다가 다시 닫아준다. 이렇게 되면 불활성 가스가 제5밸브(224)와 제6밸브(226) 사이에만 있게 된다. 이 상태를 잠시 유지한 후 제6밸브(226)를 열어서 외부로 배출되도록 함으로써 불활성 가스 압력의 변화량을 더욱 낮출 수 있다.Meanwhile, Figure 7 shows a process of closing the fifth valve 224 and not opening the sixth valve 226 at the same time, but opening and closing the valve with a certain amount of time difference. That is, with the inert gas entering between the supply tank 202 and the fifth valve 224, only the fifth valve 224 is opened and then closed again. In this case, the inert gas is only between the fifth valve 224 and the sixth valve 226. After maintaining this state for a while, the sixth valve 226 is opened to allow the gas to be discharged to the outside, thereby further reducing the amount of change in the inert gas pressure.
이상 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명하였지만, 상술한 본 발명의 기술적 구성은 본 발명이 속하는 기술 분야의 당업자가 본 발명의 그 기술적 사상이나 필수적 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적인 것이 아닌 것으로서 이해되어야 하고, 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 등가 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.Although the preferred embodiments of the present invention have been described with reference to the accompanying drawings, the technical configuration of the present invention described above can be changed to other specific forms by those skilled in the art without changing the technical idea or essential features of the present invention. You will be able to understand that this can be implemented. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive, and the scope of the present invention is indicated by the claims described later rather than the detailed description above, and the meaning and scope of the claims and All changes or modified forms derived from the equivalent concept should be construed as falling within the scope of the present invention.
10 : 증착챔버 20 : 벤트펌프
100, 200 : 공급시스템 102, 202 : 공급탱크
104, 204 : 충전탱크 106, 206 : 운송가스공급장치
108, 208 : 운송가스공급배관 110, 210 : 화학약품공급배관
112, 212 : 화학약품충전배관 114, 214 : 제1밸브
116, 216 : 제2밸브 118, 218 : 제3밸브
120, 220 : 제4밸브 122, 222 : 벤트배관
124, 224 : 제5밸브 226 : 제6밸브10: deposition chamber 20: vent pump
100, 200: Supply system 102, 202: Supply tank
104, 204: Charging tank 106, 206: Transportation gas supply device
108, 208: Transportation gas supply piping 110, 210: Chemical supply piping
112, 212: Chemical charging pipe 114, 214: First valve
116, 216: second valve 118, 218: third valve
120, 220: 4th valve 122, 222: Vent piping
124, 224: 5th valve 226: 6th valve
Claims (3)
상기 화학약품을 상기 증착챔버(10)에 공급하는 공급탱크(202)와;
충전을 위해 상기 공급탱크(202)에 화학약품을 공급하는 충전탱크(204)와;
상기 화학약품의 이송을 위한 운송가스를 공급하는 운송가스공급장치(206)와;
일단이 상기 운송가스공급장치(206)에 연결되며, 분기된 제1운송가스공급배관(208a) 및 제2운송가스공급배관(208b)의 타단은 상기 공급탱크(202) 및 상기 충전탱크(204)에 각각 연결되는 운송가스공급배관(208)과;
상기 제1운송가스공급배관(208a)에 설치되는 제1밸브(214)와;
상기 제2운송가스공급배관(208b)에 설치되는 제3밸브(218)와;
상기 공급탱크(202)와 상기 증착챔버(10) 사이에 설치되는 화학약품공급배관(210)과;
상기 화학약품공급배관(210)에 설치되는 제2밸브(216)와;
상기 공급탱크(202)와 상기 충전탱크(204) 사이에 설치되는 화학약품충전배관(212)과;
상기 화학약품충전배관(212)에 설치되는 제4밸브(220)와;
상기 벤트펌프(20)와 상기 공급탱크(202) 사이에 설치되는 벤트배관(222)과;
상기 벤트배관(222)에서 상기 벤트펌프(20)와 상기 공급탱크(202) 사이에 설치되는 제5밸브(224)와;
상기 벤트배관(222)에서 상기 벤트펌프(20)와 상기 제5밸브(224) 사이에 설치되는 제6밸브(226);를 포함하며,
제어부는
상기 공급탱크(202) 내부의 불활성 가스를 상기 벤트펌프(20)로 배출시키기위해 상기 제5밸브(224)와 상기 제6밸브(226)를 순차적으로 열었다가 닫도록 제어하며,
벤트 동작을 위해 상기 벤트펌프(20)를 작동시킨 상태에서 상기 제5밸브(224)를 열어주는 제1동작과, 상기 제5밸브(224)를 닫은 후 소정의 시간이 경과한 후에 상기 제6밸브(226)를 열어주는 제2동작을 순차적으로 반복하여 실행하는 것을 특징으로 하는, 벤트 배관의 압력을 제어하는 반도체 제조용 화학약품 공급시스템.A supply system for supplying deposition chemicals used in the deposition chamber 10 for semiconductor manufacturing and discharging the internal inert gas to the outside through the vent pump 20,
a supply tank 202 for supplying the chemicals to the deposition chamber 10;
a filling tank 204 that supplies chemicals to the supply tank 202 for charging;
a transport gas supply device 206 that supplies transport gas for transporting the chemicals;
One end is connected to the transport gas supply device 206, and the other ends of the branched first transport gas supply pipe 208a and the second transport gas supply pipe 208b are connected to the supply tank 202 and the filling tank 204. ) and transportation gas supply pipes 208 respectively connected to each other;
a first valve 214 installed in the first transport gas supply pipe 208a;
A third valve 218 installed in the second transport gas supply pipe 208b;
a chemical supply pipe 210 installed between the supply tank 202 and the deposition chamber 10;
A second valve 216 installed in the chemical supply pipe 210;
a chemical charging pipe 212 installed between the supply tank 202 and the charging tank 204;
A fourth valve 220 installed in the chemical charging pipe 212;
a vent pipe 222 installed between the vent pump 20 and the supply tank 202;
a fifth valve 224 installed between the vent pump 20 and the supply tank 202 in the vent pipe 222;
It includes a sixth valve 226 installed between the vent pump 20 and the fifth valve 224 in the vent pipe 222,
The control part
In order to discharge the inert gas inside the supply tank 202 to the vent pump 20, the fifth valve 224 and the sixth valve 226 are controlled to open and close sequentially,
A first operation of opening the fifth valve 224 while operating the vent pump 20 for vent operation, and the sixth operation after a predetermined time has elapsed after closing the fifth valve 224. A chemical supply system for semiconductor manufacturing that controls the pressure of a vent pipe, characterized in that the second operation of opening the valve 226 is sequentially and repeatedly performed.
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| KR101159656B1 (en) * | 2010-10-20 | 2012-06-25 | 주식회사 원익아이피에스 | Apparatus and method for supplying material |
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