KR102645256B1 - Apparatus and Method for Processing Substrate - Google Patents

Abstract

The present invention relates to a chamber; a substrate support portion disposed inside the chamber and supporting the substrate; an injection unit that sprays gas toward the substrate support unit; and a supply unit that supplies gas to the injection unit, wherein the supply unit includes a first supply mechanism that supplies source gas. a second supply mechanism for supplying residual source carrier gas; and a third supply mechanism for supplying a reactant gas, wherein the third supply mechanism supplies the source gas and the residual source carrier gas sequentially by the first supply mechanism and the second supply mechanism. It relates to a substrate processing device and substrate processing method that supplies reactant gas.

Description

Substrate processing device and substrate processing method {Apparatus and Method for Processing Substrate}

The present invention relates to a substrate processing device and a substrate processing method that perform processing processes on a substrate, such as a deposition process and an etching process.

Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, a deposition process that deposits a thin film of a specific material on the substrate, a photo process that selectively exposes the thin film using a photosensitive material, and an etching process that forms a pattern by removing the thin film in the selectively exposed portion, are used for the substrate. The processing process takes place.

The processing process for these substrates can be performed using a substrate processing device. A substrate processing apparatus according to the prior art performed a processing process on the substrate by sequentially spraying the first gas and the second gas toward the substrate.

Here, when the first gas has a high viscosity characteristic, the substrate processing apparatus according to the prior art dilutes the first gas and then sprays the diluted first gas toward the substrate. In this case, the substrate processing apparatus according to the prior art has a problem in that the deposition rate decreases as the first gas is diluted. In order to prevent a decrease in the deposition rate, when the first gas is sprayed toward the substrate in an undiluted state, the substrate processing apparatus according to the prior art accumulates the first gas in the gas line through which the first gas flows. Accordingly, there is a problem that the first gas becomes stagnant.

The present invention was developed to solve the problems described above, and is intended to provide a substrate processing apparatus and a substrate processing method that can reduce gas stagnation and improve deposition speed.

In order to solve the problems described above, the present invention may include the following configuration.

A substrate processing apparatus according to the present invention includes a chamber; a substrate support portion disposed inside the chamber and supporting the substrate; an injection unit that sprays gas toward the substrate support unit; And it may include a supply unit that supplies gas to the injection unit. The supply unit includes a first supply mechanism that supplies source gas; a second supply mechanism for supplying residual source carrier gas; And it may include a third supply mechanism that supplies reactant gas. The third supply mechanism may supply the reactant gas after the source gas and the residual source carrier gas are sequentially supplied by the first supply mechanism and the second supply mechanism.

The substrate processing method according to the present invention includes supplying a source gas, a reactant gas, and a residual source carrier gas to a chamber, including the steps of a) supplying the source gas to the chamber; b) stopping supply of the source gas and supplying residual source carrier gas to the chamber; c) supplying the reactant gas to the chamber; and d) repeating steps a) to c).

According to the present invention, the following effects can be achieved.

The present invention can prevent gas stagnation due to residual gas by removing residual gas using residual source carrier gas. Accordingly, the present invention allows gas with high viscosity characteristics to be used in the treatment process in an undiluted state, thereby improving the deposition rate.

The present invention is implemented so that after removing the residual gas using a residual source carrier gas, the removed residual gas can be used in a treatment process. Accordingly, the present invention can reduce the flow rate of gas that is lost and cannot be used in the treatment process. Therefore, the present invention can reduce the process cost for performing the treatment process.

The present invention is implemented so that a separate purge process for removing the residual gas can be omitted after performing the treatment process using the residual source carrier gas. Therefore, the present invention can reduce the time required for the processing process by omitting the purge process, thereby increasing the productivity of the substrate on which the processing process has been performed.

1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention.
2 and 3 are schematic side cross-sectional views of a spraying part that sprays gas in the substrate processing apparatus according to the present invention.
4 to 6 are schematic diagrams showing the connection relationship between the supply unit and the chamber in the substrate processing apparatus according to the present invention.
Figure 7 is a schematic timing diagram showing the injection time and injection section for each gas supplied by the supply unit in the substrate processing apparatus according to the present invention.
8 is a schematic flowchart of the substrate processing method according to the present invention.

Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings. Meanwhile, in FIG. 7, the horizontal axis relates to time, and the vertical axis relates to the type of gas.

Referring to FIGS. 1 to 3, the substrate processing apparatus 1 according to the present invention performs a processing process on the substrate S. The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate S, an etching process for removing a portion of the thin film deposited on the substrate S, etc. Hereinafter, the description will be made based on an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process. However, from this, the substrate processing apparatus 1 according to the present invention performs other processing processes such as the etching process. It will be apparent to those skilled in the art to derive an embodiment to which the present invention pertains.

The substrate processing apparatus 1 according to the present invention may include a chamber 2, a substrate support part 3, an injection part 4, and a supply part 5.

Referring to Figures 1 to 3, the chamber 2 provides a processing space 100. In the processing space 100, a processing process for the substrate S may be performed. The processing space 100 may be placed inside the chamber 2. An exhaust port (not shown) that exhausts gas from the processing space 100 may be coupled to the chamber 2. The substrate support part 3 and the spraying part 4 may be disposed inside the chamber 2.

The substrate support portion 3 supports the substrate S. The substrate support portion 3 may support one substrate (S) or may support a plurality of substrates (S). When a plurality of substrates S are supported on the substrate support 3, a processing process can be performed on a plurality of substrates S at a time, so that a process of manufacturing a thin film on each of the substrates S can be performed. The substrate support part 3 may be coupled to the chamber 2. The substrate support part 3 may be disposed inside the chamber 2.

The injection unit 4 sprays gas toward the substrate support unit 3. The injection unit 4 may be connected to the supply unit 5. In this case, the injection unit 4 may spray the gas supplied from the supply unit 5 toward the substrate support unit 3. The injection unit 4 may be disposed inside the chamber 2. The injection unit 4 may be disposed opposite to the substrate support unit 3. The injection unit 4 may be disposed on the upper side of the substrate support unit 3. The processing space 100 may be disposed between the injection unit 4 and the substrate support unit 3. The injection unit 4 may be coupled to a lead (not shown). The lid may be coupled to the chamber 2 to cover the top of the chamber 2.

The injection unit 4 may include a first gas passage 4a and a second gas passage 4b.

The first gas flow path 4a is for spraying gas. One side of the first gas passage 4a may be connected to the supply unit 5 through a pipe, hose, or hole in a gas block. The other side of the first gas passage 4a may be in communication with the processing space 100. Accordingly, the first gas supplied from the supply unit 5 may flow along the first gas passage 4a and then be injected into the processing space 100 through the first gas passage 4a. . The first gas passage 4a may function as a passage for gas to flow and may also function as an injection port for spraying gas into the processing space 100.

The second gas passage 4b is for spraying the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. One side of the second gas flow path 4b may be connected to the supply unit 5 through a pipe, hose, or hole in a gas block. The other side of the second gas flow path 4b may be in communication with the processing space 100. Accordingly, the second gas supplied from the supply unit 5 may flow along the second gas passage 4b and then be injected into the processing space 100 through the second gas passage 4b. there is. The second gas passage 4b may function as a passage for the second gas to flow and may also function as an injection port for spraying the second gas into the processing space 100.

The second gas passage 4b and the first gas passage 4a may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the supply unit 5 to the second gas passage 4b can be injected into the processing space 100 without passing through the first gas passage 4a. The first gas supplied from the supply unit 5 to the first gas passage 4a may be injected into the processing space 100 without passing through the second gas passage 4b. The second gas passage 4b and the first gas passage 4a may spray gas toward different parts of the processing space 100 .

For example, as shown in FIG. 2, the injection unit 4 may include a first plate 41 and a second plate 42.

The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be arranged to be spaced apart from each other. A plurality of first gas holes 411 may be formed in the first plate 41. The first gas holes 411 may each function as a passage for the first gas to flow. The first gas holes 411 may belong to the first gas flow path 4a. A plurality of second gas holes 412 may be formed in the first plate 41. The second gas holes 412 may each function as a passage for the second gas to flow. The second gas holes 412 may belong to the second gas flow path 4b. A plurality of protruding members 413 may be coupled to the first plate 41. The protruding members 413 may protrude from the lower surface of the first plate 41 toward the second plate 42 . Each of the first gas holes 411 may be formed through the first plate 41 and the protruding member 413.

A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed through the second plate 42 . The openings 421 may be disposed at positions corresponding to each of the protruding members 413. Accordingly, as shown in FIG. 2, the protruding members 413 may be formed to a length so as to be inserted into each of the openings 421. Although not shown, the protruding members 413 may be formed to have a length disposed above each of the openings 421. The protruding members 413 may be formed in a length that protrudes downward from the second plate 42 . The second gas holes 412 may be arranged to spray gas toward the upper surface of the second plate 42.

The spray unit 4 may generate plasma using the second plate 42 and the first plate 41. In this case, plasma power such as RF power may be applied to the first plate 41, and the second plate 42 may be grounded. The first plate 41 may be grounded, and plasma power may be applied to the second plate 42.

As shown in FIG. 3, a plurality of first openings 422 and a plurality of second openings 423 may be formed in the second plate 42.

The first openings 422 may be formed through the second plate 42 . The first openings 422 may be connected to each of the first gas holes 411. In this case, the protruding members 413 may be placed in contact with the upper surface of the second plate 42. The first gas may be injected into the processing space 100 through the first gas holes 411 and the first openings 422. The first gas holes 411 and the first openings 422 may belong to the first gas passage 4a.

The second openings 423 may be formed through the second plate 42 . The second openings 423 may be connected to the buffer space 43 disposed between the first plate 41 and the second plate 42. The second gas may be injected into the processing space 100 through the second gas holes 412, the buffer space 43, and the second opening 423. The second gas holes 412, the buffer space 43, and the second openings 423 may belong to the second gas passage 4b.

Referring to Figures 1 to 6, the supply unit 5 supplies gas to the injection unit 4. The supply unit 5 may be connected to the injection unit 4 through a pipe, hose, hole in a gas block, etc. The supply unit 5 may be disposed outside the chamber 2. The supply unit 5 may be coupled to the lead.

The supply unit 5 may include a first supply mechanism 51, a second supply mechanism 52, and a third supply mechanism 53.

The first supply mechanism 51 supplies the first gas. The first supply mechanism 51 can supply the first gas to the first gas passage 4a. In this case, the first supply mechanism 51 may be connected to the first gas flow path 4a through the first supply line 510. The first supply line 510 may be implemented as a pipe, hose, hole in a gas block, etc. One side of the first supply line 510 may be connected to the first supply mechanism 51. The other side of the first supply line 510 may be connected to the injection unit 4. In this case, the other side of the first supply line 510 may be connected to the first gas flow path 4a. When the first supply mechanism 51 supplies source gas as the first gas, the first supply line 510 may be implemented as a source gas supply line. In this case, the first supply mechanism 51 can supply source gas and carrier gas to the source gas supply line. Although not shown, the first supply mechanism 51 may include a storage tank that stores the first gas, a valve that selectively passes the first gas, etc. The first supply mechanism 51 may supply the first gas together with a carrier gas for flowing the first gas.

The second supply mechanism 52 supplies residual source carrier gas. The residual source carrier gas supplied by the second supply mechanism 52 is supplied to the first gas passage 4a through the first supply line 510, and is supplied through the first gas passage 4a. It can be supplied to the processing space 100. In this process, the residual source carrier gas is transferred to the processing space 100 together with the first gas (hereinafter referred to as 'residual gas') remaining in the first supply line 510 and the first gas passage 4a. can be supplied. Accordingly, the substrate processing apparatus 1 according to the present invention can achieve the following effects.

First, the substrate processing apparatus 1 according to the present invention removes the residual gas from the first supply line 510 and the first gas passage 4a using the residual source carrier gas, thereby converting the residual gas into the residual gas. Therefore, it is possible to prevent the first gas supplied by the first supply mechanism 51 from stagnating. Accordingly, the substrate processing apparatus 1 according to the present invention can use the first gas having high viscosity characteristics in the processing process in an undiluted state, thereby improving the deposition rate. For example, the substrate processing apparatus 1 according to the present invention can be used in the processing process without diluting the high-viscosity organic metal precursor gas.

Second, the substrate processing apparatus 1 according to the present invention sprays the residual gas toward the substrate S using the residual source carrier gas, and then sprays the second gas supplied by the third supply mechanism 53. It may be implemented to spray gas toward the substrate (S). Accordingly, the substrate processing apparatus 1 according to the present invention can perform the processing process using the residual gas, thereby reducing the flow rate of the first gas that is not used in the processing process and is lost. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the process cost for performing the processing process.

Third, the substrate processing apparatus 1 according to the present invention purges the first supply line 510 and the first gas flow path 4a after performing the processing process using the residual source carrier gas. The treatment process can be performed by supplying the first gas to the first supply line 510 and the first gas flow path 4a without a purge process. Therefore, the substrate processing apparatus 1 according to the present invention can increase the productivity of the substrate S on which the processing process has been performed. In this case, the substrate processing apparatus 1 according to the present invention sprays the residual gas toward the substrate S using the residual source carrier gas, and after spraying the second gas toward the substrate S, , the first gas can be directly injected toward the substrate (S).

Fourth, the substrate processing apparatus 1 according to the present invention can remove the residual gas from the first supply line 510 and the first gas passage 4a using the residual source carrier gas, so that the The first supply mechanism 51 may be implemented to supply the first gas to the first gas passage 4a in an undiluted state. Accordingly, when the first gas is a source gas and the second gas is a reactant gas, the substrate processing apparatus 1 according to the present invention uses the source material contained in the first gas injected toward the substrate S. Since the amount can be increased, the amount of adsorption of the source material to the substrate S can be increased. Therefore, the substrate processing apparatus 1 according to the present invention can improve the deposition rate by increasing the amount of reaction between the source material adsorbed on the substrate S and the reactant gas. The first supply mechanism 51 may supply the first gas containing at least one of lanthanum (La), gadolinium (Gd), and yttrium (Y) to the first gas passage 4a. In this case, the third supply mechanism 53 supplies the second gas containing at least one of oxygen (O ₂ ), ozone (O ₃ ), and nitrogen dioxide (NO ₂ ) to the second gas passage (4b). can be supplied.

Meanwhile, the residual source carrier gas may be an inert gas. The residual source carrier gas may include at least one of argon (Ar) and nitrogen (N ₂ ). The residual source carrier gas may not affect the treatment process. Although not shown, the second supply mechanism 52 may include a storage tank that stores the residual source carrier gas, a valve that selectively passes the residual source carrier gas, etc.

1 to 7, the second supply mechanism 52 supplies the residual source carrier gas for a longer supply time than the supply time for the first supply mechanism 51 to supply the first gas. You can. Accordingly, the substrate processing apparatus 1 according to the present invention can not only increase the removal rate of the residual gas using the residual source carrier gas, but also increase the processing rate of the processing process using the residual gas.

The second supply mechanism 52 may supply the residual source carrier gas after the first supply mechanism 51 stops supplying the first gas. Accordingly, the substrate processing apparatus 1 according to the present invention provides the residual source carrier supplied by the second supply mechanism 52 after the supply of the first gas by the first supply mechanism 51 is stopped. In addition to removing the residual gas using gas, the residual gas can be supplied to the processing space. As shown in FIG. 7, the time when the first supply mechanism 51 starts supplying the first gas and the time when the second supply mechanism 52 starts supplying the residual source carrier gas are the same. can do. In this case, even after the first supply mechanism 51 stops supplying the first gas, the second supply mechanism 52 can maintain supply of the residual source carrier gas. When the second supply mechanism 52 stops supplying the residual source carrier gas, the third supply mechanism 53 can start supplying the second gas. In this case, the supply time during which the second supply mechanism 52 supplies the residual source carrier gas and the supply time during which the third supply mechanism 53 supplies the second gas can be implemented to be substantially identical. Meanwhile, the supply time during which the first supply mechanism 51 supplies the first gas may be implemented to be shorter than the supply time during which the third supply mechanism 53 supplies the second gas. Although not shown, the second supply mechanism 52 may stop supplying the residual source carrier gas while the first supply mechanism 51 supplies the first gas. In this case, when the first supply mechanism 51 stops supplying the first gas, the second supply mechanism 52 can start supplying the residual source carrier gas.

The second supply mechanism 52 may supply the residual source carrier gas through the second supply line 520. The second supply line 520 may be implemented as a pipe, hose, hole in a gas block, etc. One side of the second supply line 520 may be connected to the second supply mechanism 52. The other side of the second supply line 520 may be connected to the first supply line 510. Accordingly, the residual source carrier gas can be removed from the first supply line 510. The second supply line 520 may be implemented as a residual source carrier gas supply line.

The third supply mechanism 53 supplies the second gas. The third supply mechanism 53 can supply the second gas to the second gas passage 4b. In this case, the third supply mechanism 53 may be connected to the second gas flow path 4b through the third supply line 530. The third supply line 530 may be implemented as a pipe, hose, hole in a gas block, etc. One side of the third supply line 530 may be connected to the third supply mechanism 53. The other side of the third supply line 530 may be connected to the injection unit 4. In this case, the other side of the third supply line 530 may be connected to the second gas flow path 4b. When the third supply mechanism 53 supplies reactant gas as the second gas, the third supply line 530 may be implemented as a reactant gas supply line. Although not shown, the third supply mechanism 53 may include a storage tank for storing the second gas, a valve for selectively passing the second gas, etc.

The third supply mechanism 53 can supply the reactant gas after the source gas and the residual source carrier gas are sequentially supplied by the first supply mechanism 51 and the second supply mechanism 52. there is. Since the reactant gas is supplied after the source gas and the residual source carrier gas are sequentially supplied, the substrate processing apparatus 1 according to the present invention provides the first supply line 510 and the first gas passage 4a. ) may be implemented so that the source gas, the residual gas, and the reactant gas are sequentially sprayed toward the substrate (S) without a purge process to purge the gas. Therefore, the substrate processing apparatus 1 according to the present invention can increase the productivity of the substrate S on which the processing process has been performed. In addition, since the residual gas contains the source gas, the substrate processing apparatus 1 according to the present invention sequentially sprays the source gas, the residual gas, and the reactant gas toward the substrate S, The above treatment process can be performed using Atomic Layer Deposition (ALD).

Here, the substrate processing apparatus 1 according to the present invention may include various embodiments depending on the position where the second supply mechanism 52 supplies the residual source carrier gas. Hereinafter, these embodiments will be described in detail with reference to the attached drawings.

Referring to FIGS. 1 and 4 , the second supply mechanism 52 according to the first embodiment can supply the residual source carrier gas to the first supply line 510. In this case, the second supply mechanism 52 according to the first embodiment can supply the residual source carrier gas between the flow controller 511 and the chamber 2. The flow controller 511 may be installed in the first supply line 510. The flow controller 511 may be disposed between the first supply mechanism 51 and the chamber 2. The flow controller 511 can control the flow rate of the first gas supplied by the first supply mechanism 51. Accordingly, the first gas whose flow rate is adjusted by the flow rate controller 511 can be supplied to the injection unit 4.

The second supply mechanism 52 according to the first embodiment may be connected to the first supply line 510 through the second supply line 520. The second supply line 520 may be connected to a portion of the first supply line 510 disposed between the flow controller 511 and the chamber 2. Accordingly, the residual source carrier gas can be supplied to a portion of the first supply line 510 disposed between the flow controller 511 and the chamber 2 through the second supply line 520. . Thereafter, the residual source carrier gas flows along the first supply line 510 to remove the residual gas from the first supply line 510, and flows along the first gas passage 4a to remove the residual gas from the first supply line 510. After the residual gas is removed from the first gas passage 4a, it may be injected into the processing space 100 together with the residual gas.

Referring to Figures 1 and 5, the second supply mechanism 52 according to the second embodiment can supply the residual source carrier gas to the vaporizer 512. The vaporizer 512 may be installed in the first supply line 510 so as to be disposed between the first supply mechanism 51 and the chamber 2. The vaporizer 512 can vaporize the first gas supplied from the first supply mechanism 51. In this case, the first supply mechanism 51 may supply the first gas in a liquid state, and the vaporizer 512 may vaporize the first gas into a gaseous state. Accordingly, the first gas in a gaseous state can be supplied to the injection unit 4. When the flow controller 511 is provided, the flow controller 511 may be disposed between the first supply mechanism 51 and the vaporizer 512. In this case, the flow controller 511 may be implemented as a Liquid Mass Flow Controller (LMFC).

The second supply mechanism 52 may supply vaporization auxiliary gas used for vaporization by the vaporizer 512 to the residual source carrier gas. Accordingly, the substrate processing apparatus 1 according to the present invention vaporizes the first gas using the vaporization auxiliary gas and then vaporizes the first gas through the first supply line 510 and the first gas flow path using the vaporization auxiliary gas. The residual gas can be removed from (4a). Therefore, the substrate processing apparatus 1 according to the present invention is implemented so that the vaporization auxiliary gas can be commonly used in the vaporization process and the residual gas removal process, thereby further reducing process costs.

The second supply mechanism 52 may be connected to the vaporizer 512 through the second supply line 520. One side of the second supply line 520 may be connected to the second supply mechanism 52, and the other side of the second supply line 520 may be connected to the vaporizer 512. After the residual source carrier gas is supplied to the vaporizer 512 and used for vaporization, the residual gas is removed from the first supply line 510 while flowing along the first supply line 510, and the first The residual gas can be removed from the first gas passage (4a) while flowing along the first gas passage (4a). Thereafter, the residual source carrier gas may be injected into the processing space 100 together with the residual gas.

Referring to FIGS. 1 and 6 , the second supply mechanism 52 according to the third embodiment can supply the residual source carrier gas to the first supply line 510. The second supply mechanism 52 according to the third embodiment can supply the residual source carrier gas between the vaporizer 512 and the chamber 2.

The second supply mechanism 52 according to the third embodiment may be connected to the first supply line 510 through the second supply line 520. The second supply line 520 may be connected to a portion of the first supply line 510 disposed between the vaporizer 512 and the chamber 2. Accordingly, the residual source carrier gas can be supplied to a portion of the first supply line 510 disposed between the vaporizer 512 and the chamber 2 through the second supply line 520. Thereafter, the residual source carrier gas flows along the first supply line 510 to remove the residual gas from the first supply line 510, and flows along the first gas passage 4a to remove the residual gas from the first supply line 510. After the residual gas is removed from the first gas passage 4a, it may be injected into the processing space 100 together with the residual gas.

Hereinafter, embodiments of the substrate processing method according to the present invention will be described in detail with reference to the attached drawings. In describing embodiments of the substrate processing method according to the present invention, when it is described that a structure is formed “on” or “under” another structure, this description refers to the structure as well as the case where the structures are in contact with each other. It should be interpreted to include cases where a third structure is interposed.

Referring to Figures 1 to 8, the substrate processing method according to the present invention performs a processing process on the substrate (S). The substrate processing method according to the present invention can be performed using the substrate processing apparatus 1 according to the present invention described above. The substrate processing method according to the present invention may include steps a) to d).

Step a) (S10) is to supply the source gas to the chamber (2). In step a) (S10), when the first supply mechanism 51 supplies the source gas, the source gas flows along the first supply line 510 and the first gas passage 4a. This can be achieved by spraying into the processing space 100. In this case, the first supply mechanism 51 may supply source gas and carrier gas together. The source material of the source gas supplied to the chamber 2 through step a) (S10) may be adsorbed on the substrate (S).

Step b) (S20) is to supply the residual source carrier gas to the chamber 2. In step b) (S20), when the second supply mechanism 52 supplies the residual source carrier gas, the residual source carrier gas flows through the first supply line 510 and the first gas passage 4a. This can be achieved by flowing along and then spraying into the treatment hole rkks (100). In this case, the residual source carrier gas flows along the first supply line 510 to remove the residual gas from the first supply line 510, and flows along the first gas passage 4a to remove the residual gas from the first supply line 510. After the residual gas is removed from the first gas passage 4a, it may be injected into the processing space 100 together with the residual gas. Step b) (S20) can be accomplished by stopping the supply of the source gas and supplying the remaining source carrier gas to the chamber 2. k

Step c) (S30) is supplying the reactant gas to the chamber (2). In step c) (S30), when the third supply mechanism 53 supplies the reactant gas, the reactant gas flows along the third supply line 530 and the second gas flow path 4b. This can be achieved by spraying it into the processing space 100. The reactant gas supplied to the chamber 2 through step c) (S30) may react with the source material adsorbed on the substrate S to form a thin film on the substrate S. Accordingly, a thin film may be formed on the substrate S using atomic layer deposition (ALD).

As such, the substrate processing method according to the present invention can perform the processing process by sequentially supplying the source gas, the residual source carrier gas, and the reactant gas to the chamber 2. Accordingly, the substrate processing method according to the present invention can achieve the following effects.

First, the substrate processing method according to the present invention removes the residual gas from the first supply line 510 and the first gas passage 4a using the residual source carrier gas, thereby removing the residual gas from the source. Gas can be prevented from stagnating in the first supply line 510 and the first gas flow path 4a. Accordingly, in the substrate processing method according to the present invention, the source gas having high viscosity characteristics can be used in the processing process in an undiluted state, thereby improving the deposition rate. For example, the substrate processing method according to the present invention can be used in the processing process without diluting the high-viscosity organic metal precursor gas.

Second, the substrate processing method according to the present invention is to spray the residual gas toward the substrate (S) using the residual source carrier gas, and then spray the reactant gas supplied by the third supply mechanism 53 It may be implemented to spray toward the substrate (S). Accordingly, the substrate processing method according to the present invention can perform the processing process using the residual gas, thereby reducing the flow rate of the source gas that is not used in the processing process and is lost. Therefore, the substrate processing method according to the present invention can reduce the process cost for performing the processing process.

Third, the substrate processing method according to the present invention is performed without a purge process for purging the first supply line 510 and the first gas passage 4a after performing the processing process using the residual source carrier gas. The treatment process can be performed by supplying the source gas to the first supply line 510 and the first gas flow path 4a. Therefore, the substrate processing method according to the present invention can increase the productivity of the substrate S on which the processing process has been performed. In this case, the substrate processing method according to the present invention uses the residual source carrier gas to spray the residual gas toward the substrate (S) and spray the reactant gas toward the substrate (S), then immediately Source gas may be sprayed toward the substrate (S).

Fourth, the substrate processing method according to the present invention can remove the residual gas from the first supply line 510 and the first gas passage 4a using the residual source carrier gas, so the first supply mechanism (51) may be implemented to supply the source gas to the first gas flow path (4a) in an undiluted state. Accordingly, the substrate processing method according to the present invention can increase the amount of the source material contained in the source gas sprayed toward the substrate (S), so the amount of adsorption of the source material to the substrate (S) can be increased. Therefore, the substrate processing method according to the present invention can improve the deposition rate by increasing the amount of reaction between the source material adsorbed on the substrate S and the reactant gas.

Step d) (S40) repeats steps a) (S10) to c) (S30). Through the d) step (S40), the a) step (S10) to the c) step (S30) may be repeatedly performed until a thin film of a preset thickness is formed on the substrate (S).

Referring to FIGS. 1 to 7, in step b) (S20), the residual source carrier gas may be an inert gas. The residual source carrier gas may include at least one of argon (Ar) and nitrogen (N ₂ ). The residual source carrier gas may not affect the treatment process.

Referring to FIGS. 1 to 7, the supply time for supplying the residual source carrier gas in step b) (S20) is implemented to be longer than the supply time for supplying the source gas in step a) (S10). You can. Accordingly, the substrate processing method according to the present invention can not only increase the removal rate of the residual gas using the residual source carrier gas, but also increase the throughput rate of the treatment process using the residual gas.

Here, as shown in FIG. 7, the point at which supply of the source gas through step a) (S10) begins and the point at which supply of the residual source carrier gas through step b) (S20) begin are may be the same. In this case, even after the supply of the source gas through step a) (S10) is stopped, the supply of the residual source carrier gas through step b) (S20) can be maintained. When the supply of the residual source carrier gas through step b) (S20) is stopped, the supply of the reactant gas through step c) (S30) may begin. In this case, the supply time of the residual source carrier gas through step b) (S20) and the supply time of the reactant gas through step c) (S30) can be implemented to be approximately identical. Meanwhile, the supply time of the source gas through step a) (S10) may be implemented shorter than the supply time of the reactant gas through step c) (S30). In this case, since the source gas can be supplied in an undiluted state through step a) (S10), a sufficient amount of source material can be supplied even if the supply time is short. Although not shown, while the source gas is supplied through step a) (S10), the supply of the residual source carrier gas is stopped, and when the supply of the source gas is stopped through step a) (S10), the b ) Supply of the residual source carrier gas may begin through step (S20).

Referring to FIGS. 1, 4, and 7, step b) (S20) is performed by supplying the residual source carrier gas between the flow controller 511 and the chamber 2 in the first supply line 510. This can be achieved by supplying. Accordingly, the residual source carrier gas can be supplied to a portion of the first supply line 510 disposed between the flow controller 511 and the chamber 2. Thereafter, the residual source carrier gas flows along the first supply line 510 to remove the residual gas from the first supply line 510, and flows along the first gas passage 4a to remove the residual gas from the first supply line 510. After the residual gas is removed from the first gas passage 4a, it can be supplied to the chamber 2 together with the residual gas.

Referring to FIGS. 1, 5, and 7, step b) (S20) may use the vaporization auxiliary gas supplied to the vaporizer 512 as the residual source carrier gas. Accordingly, the substrate processing method according to the present invention vaporizes the source gas using the vaporization auxiliary gas and then vaporizes the source gas from the first supply line 510 and the first gas passage 4a using the vaporization auxiliary gas. The residual gas can be removed. Therefore, the substrate processing method according to the present invention can be implemented so that the vaporization auxiliary gas can be commonly used in the vaporization process and the residual gas removal process, thereby reducing process costs.

When step b) (S20) uses the vaporization auxiliary gas as the residual source carrier gas, the residual source carrier gas is supplied to the vaporizer 512 and used for vaporization, and the residual source carrier gas is the first supply. The residual gas is removed from the first supply line 510 while flowing along the line 510, and the residual gas is removed from the first gas passage 4a while flowing along the first gas passage 4a. Later, it can be supplied to the chamber 2 together with the residual gas.

Referring to FIGS. 1, 6, and 7, step b) (S20) supplies the residual source carrier gas between the vaporizer 512 and the chamber 2 from the first supply line 510. It can be accomplished by doing this. Accordingly, the residual source carrier gas can be supplied to a portion of the first supply line 510 disposed between the vaporizer 512 and the chamber 2. Thereafter, the residual source carrier gas flows along the first supply line 510 to remove the residual gas from the first supply line 510, and flows along the first gas passage 4a to remove the residual gas from the first supply line 510. After the residual gas is removed from the first gas passage 4a, it can be supplied to the chamber 2 together with the residual gas.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is commonly known in the technical field to which the present invention pertains that various substitutions, modifications and changes can be made without departing from the technical spirit of the present invention. It will be clear to those who have the knowledge of.

1: Substrate processing device 2: Chamber
3: substrate support part 4: injection part
4a: first gas flow path 4b: second gas flow path
41: first plate 411: first gas hole
412: Second gas hole 413: Protruding member
42: second plate 421: opening
422: first opening 423: second opening
43: buffer space 5: supply unit
51: first supply mechanism 510: first supply line
511: flow controller 512: vaporizer
52: second supply mechanism 520: second supply line
53: Third supply mechanism 530: Third supply line
100: Processing space S: Substrate

Claims (15)

A substrate processing method that supplies source gas, reactant gas, and residual source carrier gas to the chamber,
a) supplying the source gas to the chamber;
b) stopping supply of the source gas and supplying residual source carrier gas;
c) supplying the reactant gas to the chamber; and
d) repeating steps a) to c),
In step a), the source gas is supplied to the chamber through a source gas supply line,
In step b), residual source carrier gas is supplied to a vaporizer installed in the source gas supply line, and vaporization auxiliary gas used by the vaporizer for vaporization is used as the residual source carrier gas,
In step b), the residual source carrier gas is supplied to the vaporizer so that after the residual source carrier gas is used for vaporization in the vaporizer, the residual gas is removed from the source gas supply line while flowing along the source gas supply line. and supplying the residual gas and the residual source carrier gas to the chamber,
In step c), the reactant gas is supplied to the chamber and a processing process is performed in the chamber by atomic layer deposition using the source gas, the residual gas, and the reactant gas,
Step d) is a substrate processing method characterized in that steps a) to c) are repeated to sequentially supply the source gas, the residual source carrier gas, and the reactant gas without a purge process. According to paragraph 1,
In step a), the source gas whose flow rate is adjusted by a flow controller installed in the source gas supply line is supplied to the chamber. delete delete delete delete According to paragraph 1,
A substrate processing method, wherein the supply time for supplying the residual source carrier gas in step b) is longer than the supply time for supplying the source gas in step a). chamber;
a substrate support portion disposed inside the chamber and supporting the substrate;
an injection unit that sprays gas toward the substrate support unit; and
It includes a supply unit that supplies gas to the injection unit,
The supply department,
A first supply mechanism for supplying source gas;
a second supply mechanism for supplying residual source carrier gas; and
It includes a third supply mechanism that supplies reactant gas,
The third supply mechanism supplies the reactant gas after the source gas and the residual source carrier gas are sequentially supplied by the first supply mechanism and the second supply mechanism,
The first supply mechanism includes a source gas supply line connected to the injection unit, and a vaporizer installed in the source gas supply line,
The second supply mechanism uses vaporization auxiliary gas used by the vaporizer for vaporization as the residual source carrier gas and supplies the residual source carrier gas to the vaporizer,
The second supply mechanism supplies the residual source carrier gas to the vaporizer to remove the residual gas from the source gas supply line while flowing along the source gas supply line after the residual source carrier gas is used for vaporization in the vaporizer. And
In the chamber, a processing process is performed using an atomic layer deposition method using the source gas, the residual gas, and the reactant gas,
A substrate processing apparatus, wherein the supply unit sequentially and repeatedly supplies the source gas, the residual source carrier gas, and the reactant gas without a purge process. According to clause 8,
The first supply mechanism includes a flow controller installed in the source gas supply line,
A substrate processing apparatus, wherein the flow rate controller adjusts the flow rate of the source gas supplied by the first supply mechanism. delete delete delete delete According to clause 8,
The substrate processing apparatus, wherein the second supply mechanism supplies the residual source carrier gas for a longer supply time than the supply time during which the first supply mechanism supplies the source gas. According to clause 8,
The substrate processing apparatus, wherein the second supply mechanism supplies the residual source carrier gas after the first supply mechanism stops supplying the source gas.

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