KR100407507B1 - Gas injector for ALD device - Google Patents

Abstract

According to the present invention, in order to deposit an atomic layer thin film on a substrate by sequentially spraying a plurality of reaction gases and purging gases at predetermined time intervals, the respective injection nozzles for each reaction gas separated from each other in the gas injection passage are separately provided. The present invention relates to a gas injector of an atomic layer deposition apparatus having a purge gas nozzle disposed between these gas injection nozzles and operating sequentially to prevent generation of foreign substances due to unwanted reaction between the gas inlet and the reaction gas in the reaction chamber. .

Description

Gas injector for atomic layer deposition apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas injector of an atomic layer deposition apparatus, and more particularly, in the case of injecting the reaction gas in multiple times, each injection nozzle for the reaction gas and a purge gas nozzle therebetween are provided to prevent unwanted reaction between the reaction gases. The present invention relates to a gas injector of an atomic layer deposition apparatus, which prevents generation of foreign substances due to a reaction.

Generally, in order to deposit a thin film of a predetermined thickness on a substrate such as a semiconductor wafer or glass, a thin film manufacturing method using a vapor method, a chemical vapor deposition method, an atomic layer deposition method or the like is used.

Among these, the atomic layer deposition method is a method of stacking each reactant in atomic layer units on a substrate to be processed by sequentially supplying each reaction gas and purging gas through a gas pulsing method.

The atomic layer deposition method has been applied to meet the demand for forming a thin film having high aspect ratio, thin film uniformity in unevenness, and excellent electrical and physical properties due to the increase in the degree of integration of semiconductor devices. Decomposition of the reactants by chemical substitution through the high membrane density and excellent stoichiometric membrane can be obtained.

In addition, the by-products generated by chemical substitution during the process is always a gas, so it is easy to remove the chamber, and only the temperature is a process variable, so it is easy to control and maintain the process.

On the other hand, Figure 1 is a schematic cross-sectional view showing an example of a conventional atomic layer deposition apparatus.

As shown in FIG. 1, a vacuum chamber 10 and a reactor 11 installed in the vacuum chamber 10 are provided.

The upper part of the reactor 11 is installed to be opened and closed, and a heating member 12 for heating a substrate 13 such as a wafer to an appropriate temperature is provided at upper and lower portions of the reactor 11.

In addition, in the reactor 11, a tunnel-shaped reaction chamber 14 in which the substrate 13 to be processed is mounted is formed, and a gas injection passage 15 is provided at one side thereof, and a gas discharge passage 16 at the other side thereof. ) Is provided.

The atomic layer deposition apparatus injects a first reaction gas into the reaction chamber 14 through the gas injection passage 15 to form an atomic layer thin film for the first reactant on the substrate 13, and then purges a predetermined purge. The gas is injected to discharge the first reaction gas remaining in the gas injection passage 15 and the reaction chamber 14 to the outside through the gas discharge passage 16. In addition, after a predetermined second reaction gas is injected and deposited on the substrate, residual gas is removed by injection of a purge gas.

Each reaction gas and purge gas are sequentially sprayed at such a series of processes to form an atomic layer thin film for the reaction gas on the substrate 13.

However, as described above, when two different kinds of reaction gases are injected through the same gas injection passage 15, the reaction gas may be formed in a portion of the gas injection passage 15 due to the complicated structure of the gas injection hole, generation of turbulence, and the like. Will not be sufficiently purged and will remain.

Therefore, the reaction gas remaining in the gas injection passage 15 reacts with other kinds of reaction gases sequentially injected to generate unwanted foreign matter in the gas injection passage 15, which causes a decrease in the performance of the reactor and a thin film of the wafer. There is a problem that causes a defect.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to introduce two or more reaction gases independently into a reaction chamber, while preventing an unwanted reaction between the reaction gases. To provide.

1 is a schematic cross-sectional view showing an example of a conventional atomic layer deposition apparatus.

Figure 2 is a schematic cross-sectional view showing one embodiment of an atomic layer deposition apparatus having a gas injection apparatus according to the present invention.

3 is a cross-sectional view showing a gas flow state by the gas injection method according to the present invention.

4 is a view showing an embodiment of a gas injection method according to the present invention.

5 is a view showing another embodiment of a gas injection method according to the present invention.

Figure 6 is a schematic cross-sectional view showing one embodiment of a triple gas injector according to the present invention.

7 is a cross-sectional view schematically showing another embodiment of the triple gas injector according to the present invention.

<Description of Symbols for Main Parts of Drawings>

10,20. Vacuum chamber 11,21. Reactor

12,22. Heating element 13,23. Substrate to be processed

14,24. Reaction chamber 15,25. Gas injection passage

16,26. Gas outlet passage 27. Gas supply part

28. First gas injection nozzle 29,32. Purge gas nozzle

30. Second gas jet nozzle 31. Third gas jet nozzle

33. Gas inlet

In order to achieve the above object, the gas injection apparatus of the atomic layer deposition apparatus according to the present invention is installed to form a predetermined space inside the vacuum chamber, and a gas injection passage is formed at one side, and a gas discharge passage is formed at the other side. And a plurality of reaction gas nozzles formed in the gas injection passage to supply gas, and a purge gas nozzle formed between the reaction gas nozzles to purge the reaction chamber. In the gas injection apparatus for laminating the atomic layer thin film on the substrate to be sequentially sprayed at a time interval of the, the reaction gas nozzle is provided for each reaction gas individually, formed in the horizontal direction of the reactor substrate to be processed Reaction gas is supplied to the lateral direction to the purge gas nozzle, the reaction gas nozzles This is formed in the horizontal direction is characterized in that to block the undesired reaction between the reaction gas.

In addition, it is preferable that a plurality of gas injection passages be formed around the substrate to be processed.

In the gas injector for injecting triple reaction gas, the first reaction gas nozzle and the second reaction gas nozzle for the first and second reaction gases which do not react with each other have a layer structure on one side of the gas injection passage. And a third reaction gas nozzle for injecting a third reaction gas on the other side of the gas injection passage, and a purge gas nozzle is formed between the second reaction gas nozzle and the third reaction gas nozzle to form a first reaction gas nozzle. Or it is preferable to block the reaction of the second reaction gas and the third reaction gas.

In addition, while the corresponding reaction gas is injected through each of the gas injection nozzles, the purge gas nozzle is sprayed by the diffusion at the gas inlet by spraying a predetermined amount (5 to 50 percent of the amount of the reaction gas being injected). Prevents reaction between reaction gases.

Preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of an atomic layer deposition apparatus having a gas injection apparatus according to the present invention.

As shown in FIG. 2, an embodiment of an atomic layer deposition apparatus including a gas injector according to the present invention includes a vacuum chamber 20 and a reactor 21 installed in the vacuum chamber 20. The reactor 21 includes a reaction chamber 24 on which a substrate 23 to be processed, such as a semiconductor wafer or glass, is mounted and supported, and is maintained at a predetermined temperature and pressure atmosphere, and at one side thereof, a gas supply part 27. ) And a gas injection passage 25, and a gas discharge passage 26 is formed at the other side.

In addition, a heating member 22 is installed above and below the reactor 21 to provide a predetermined amount of heat so that the reaction chamber 24 and the substrate to be processed 23 maintain a uniform temperature distribution.

Meanwhile, the gas injection passage 25 sequentially injects two reaction gases and purge gases into the reaction chamber 24 at predetermined time intervals so as to deposit an atomic layer thin film on the substrate 23 to be processed. will be.

In addition, a first gas injection nozzle 28, a second gas injection nozzle 30, and a purge gas nozzle 29 are respectively provided in the gas injection passage 25, and each reaction gas and the purge gas are respectively provided. After being flowed in an isolated state through the nozzles 28, 29, and 30, it is injected into the reaction chamber 24 through the gas inlet 33.

The purge gas nozzle 29 is provided between the first gas injection nozzle 28 and the second gas injection nozzle 30 to exhibit a curtain effect between the first reaction gas and the second reaction gas. will be.

As the purge gas, an inert gas such as nitrogen (N ₂ ) or argon (Ar) is used. Alternately purged.

The gas supply unit 27 is opened with the first gas injection nozzle 28, the second gas injection nozzle 30, and the purge gas nozzle 29, respectively, and opens and closes the nozzles at predetermined time units. To control each of the reaction gas and the purge gas into the reaction chamber (24).

On the other hand, the process of injecting the reaction gas and purge gas through the gas injection is configured as described above is made as follows.

That is, first, the first reaction gas is injected into the reaction chamber 24 through the first gas injection nozzle 28 for a predetermined time to deposit an atomic layer for the first reaction gas on the substrate 23 to be processed. Thereafter, a gas such as nitrogen is injected through the purge gas nozzle 29 to purge the first reaction gas remaining in the gas inlet 33 or the reaction chamber 24.

Then, the second reaction gas is injected through the second gas injection nozzle 30 for a predetermined time to deposit a second reaction gas on the atomic layer of the first reaction gas, and the purge gas nozzle 29 The purge gas is injected through the second purge gas.

Such a gas injection method is illustrated in FIG. 4, wherein a series of processes in which the first reaction gas, the purge gas, the second reaction gas, and the purge gas are sequentially sprayed is performed as one cycle, and the injection cycle is repeated to perform the treatment. An atomic layer thin film for the first reaction gas and the second reaction gas is formed on the substrate 23.

On the other hand, when injecting the reaction gas and purge gas as described above, the reaction gas injected through the first gas injection nozzle 28 is injected through the gas inlet 33 while some of the gas inlet 33 ), That is, diffused toward the second gas injection nozzle 30.

Accordingly, the gas injection hole 33 may generate unwanted foreign substances by reacting the first reaction gas and the second reaction gas remaining in the second gas injection nozzle 30 with each other.

Therefore, it is preferable to block the diffusion of the first reaction gas downward by injecting a small amount of purge gas through the purge gas nozzle 29 while injecting the first reaction gas.

In addition, the first reaction gas and the second reaction gas are unnecessarily reacted in the gas inlet 33 by injecting a small amount of purge gas through the purge gas nozzle 29 while the second reaction gas is injected. Block it.

FIG. 3 is a cross-sectional view illustrating a flow state of a reaction gas and a purge gas generated by injecting a small amount of purge gas while the first reaction gas is injected, and FIG. 5 is a diagram illustrating such a gas injection method.

At this time, the purge gas injected while the reaction gas is injected is a proper amount (5% or more and 50% or less) relative to the injection amount of the reaction gas, thereby preventing the diffusion of the reaction gas at the gas inlet 33. Consider the atomic layer deposition efficiency of the reaction gas.

Meanwhile, as described above, each of the gas injection passages 25 including the independent reaction gas nozzles 28 and 30 and the purge gas nozzle 29 may have a substrate 23 such as a semiconductor wafer or glass seated thereon. It is provided on one side of the reaction chamber 24, to form a plurality of the gas injection passages 25 as described above around the substrate 23 to uniformly inject the gas on the substrate 23 to be processed. It is preferable.

6 is a schematic cross-sectional view of a triple gas injector as another embodiment of the present invention.

As shown in FIG. 6, when atomic layer deposition is carried out through three kinds of reaction gases on the substrate 23 to be processed, the gas injection passage 25 is described with reference to FIGS. 2 and 3. As described above, the first and second gas injection nozzles 28 and 30 and the first purge gas nozzle 29 include a third gas injection nozzle 32 for injecting the third reaction gas, and The second gas injection nozzle 30 and the third gas injection nozzle 32 is made of a structure further comprising a second purge gas nozzle 31 provided between.

As described with reference to FIG. 4, a gas injection method for the triple gas injection device is predetermined through the first purge gas nozzle 29 and the second purge gas nozzle 31 after injecting each reaction gas. By alternately injecting the purge gas, the reaction gas remaining in the gas inlet 33 and the reaction chamber 24 is purged.

In addition, in order to block unnecessary reactions caused by the diffusion between the reaction gases in the gas inlet 33, while the reaction gas is injected through each of the gas injection nozzles 28, 30, 32, as illustrated in FIG. A small amount of purge gas is injected through the first purge gas nozzle 29 and the second purge gas nozzle 31.

The triple gas injector as described above is a preferred embodiment for the case where the reaction gas is highly reactive with each other.

On the other hand, Figure 7 is a cross-sectional view showing another embodiment of the triple gas injector according to the present invention, when the reaction does not occur well between the two reaction gases of the triple reaction gas (that is, the first reaction gas and The second reaction gas shows a preferred embodiment of the triple gas injector for the case where the second reaction gas is weak in reactivity and high in reactivity between the first, second and third reaction gases.

As shown in FIG. 7, another embodiment of the triple gas injector according to the present invention includes a first reaction gas nozzle 28 and a second reaction gas nozzle for first and second reaction gases that do not react with each other. 30 is formed above the gas injection passage 25, and a third reaction gas nozzle 32 for the third reaction gas is formed below the passage 25, and the second reaction gas nozzle 30 The purge gas nozzle 29 is formed between the third reaction gas nozzles 32.

At this time, the injection method for each reaction gas and purging gas, as described with reference to FIGS. 4 and 5, each reaction gas is sequentially injected at a predetermined time interval, after each reaction gas injection The injection port and the reaction chamber are purged by injecting a purging gas. In addition, by injecting a predetermined amount (5% to 50%) of purging gas while each of the reaction gases is injected, the first reaction gas or the second reaction gas is diffused into the lower portion of the gas inlet 33 and the third reaction gas You can block the reaction.

The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the technical idea of the present invention.

According to the present invention made as described above, in the method of depositing an atomic layer thin film by spraying a plurality of reaction gases by effectively blocking the formation of foreign matter by the unwanted reaction between the reaction gas in the gas inlet and the reaction chamber, In addition, the present invention can improve the performance of the reactor and the homogeneity of the thin film. In addition, in the present invention, a gas inlet is formed in one side of the reaction chamber in a horizontal direction, and a plurality of reaction gas nozzles are formed in the gas inlet, and a reaction gas nozzle. Since purge gas nozzles are formed between them, the reaction gas is supplied to the substrate to be processed in the reaction chamber in a lateral direction, thereby suppressing unwanted reactions between the reaction gases and suppressing unnecessary outflow of the reaction gases, thereby increasing the efficiency of deposition. Is higher, thereby reducing the cost and time required for the operation. .

Claims (5)

It is installed to form a predetermined space inside the vacuum chamber, the gas injection passage is formed on one side, the gas discharge passage is formed on the other side, a plurality of reaction gas nozzles are formed in the gas injection passage to supply gas; A gas sprayer is formed between the reaction gas nozzles to purge the reaction chamber, so that two or more reaction gases are sequentially injected into the reaction chamber at predetermined time intervals so that an atomic layer thin film is laminated on the substrate to be processed. In an apparatus; The reaction gas nozzle is provided separately for each reaction gas, and formed in the horizontal direction of the reactor to supply the reaction gas to the substrate to be processed laterally; The purge gas nozzles are formed in a horizontal direction between the respective reaction gas nozzles gas injection device of the atomic layer deposition apparatus, characterized in that to block unwanted reaction between the reaction gases. The gas injection device of an atomic layer deposition apparatus according to claim 1, wherein a plurality of the gas injection passages are formed around the substrate to be processed. The gas injection passage of claim 1, wherein the first reaction gas nozzle and the second reaction gas nozzle for the first and second reaction gases which do not react with each other are formed in a layer structure on one side of the gas injection passage. The other side is provided with a third reaction gas nozzle for injecting a third reaction gas, a purge gas nozzle is formed between the second reaction gas nozzle and the third reaction gas nozzle to react with the first or second reaction gas and the third reaction A gas injection apparatus of an atomic layer deposition apparatus, characterized in that the gas is blocked from reacting. The gas of an atomic layer deposition apparatus according to any one of claims 1 to 3, wherein the purge gas nozzle injects a predetermined amount of purge gas while injecting the reaction gas through the respective gas injection nozzles. Spraying device. The gas injection device of an atomic layer deposition apparatus of claim 4, wherein the purge gas nozzle injects 5 to 50 percent of the purge gas relative to the injection amount of the reaction gas while the reaction gas is injected.