KR102201122B1 - 민감도 개선 및 뉴슨스 억제를 위해 로직 및 핫스팟 검사에서 z-층 컨텍스트를 사용하는 시스템 및 방법 - Google Patents

민감도 개선 및 뉴슨스 억제를 위해 로직 및 핫스팟 검사에서 z-층 컨텍스트를 사용하는 시스템 및 방법 Download PDF

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KR102201122B1
KR102201122B1 KR1020197002114A KR20197002114A KR102201122B1 KR 102201122 B1 KR102201122 B1 KR 102201122B1 KR 1020197002114 A KR1020197002114 A KR 1020197002114A KR 20197002114 A KR20197002114 A KR 20197002114A KR 102201122 B1 KR102201122 B1 KR 102201122B1
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wafer
design file
data
critical areas
processor
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KR20190014103A (ko
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파반 페랄리 (쿠마르)
후청 리
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020197002114A 2016-06-29 2017-06-16 민감도 개선 및 뉴슨스 억제를 위해 로직 및 핫스팟 검사에서 z-층 컨텍스트를 사용하는 시스템 및 방법 Active KR102201122B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662356499P 2016-06-29 2016-06-29
US62/356,499 2016-06-29
US15/600,784 2017-05-21
US15/600,784 US10304177B2 (en) 2016-06-29 2017-05-21 Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression
PCT/US2017/037934 WO2018005132A1 (en) 2016-06-29 2017-06-16 Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression

Publications (2)

Publication Number Publication Date
KR20190014103A KR20190014103A (ko) 2019-02-11
KR102201122B1 true KR102201122B1 (ko) 2021-01-08

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KR1020197002114A Active KR102201122B1 (ko) 2016-06-29 2017-06-16 민감도 개선 및 뉴슨스 억제를 위해 로직 및 핫스팟 검사에서 z-층 컨텍스트를 사용하는 시스템 및 방법

Country Status (7)

Country Link
US (1) US10304177B2 (enExample)
JP (1) JP6906044B2 (enExample)
KR (1) KR102201122B1 (enExample)
CN (1) CN109314067B (enExample)
IL (1) IL263315B (enExample)
TW (1) TWI730133B (enExample)
WO (1) WO2018005132A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320742B2 (en) * 2018-10-31 2022-05-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for generating photomask patterns
US11557031B2 (en) * 2019-11-21 2023-01-17 Kla Corporation Integrated multi-tool reticle inspection
US11887296B2 (en) * 2021-07-05 2024-01-30 KLA Corp. Setting up care areas for inspection of a specimen
KR102657751B1 (ko) * 2021-08-19 2024-04-16 주식회사 크레셈 학습모델을 이용한 기판 검사 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050004774A1 (en) 2003-07-03 2005-01-06 William Volk Methods and systems for inspection of wafers and reticles using designer intent data
US20080167829A1 (en) 2007-01-05 2008-07-10 Allen Park Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US20150324965A1 (en) 2014-05-12 2015-11-12 Kla-Tencor Corporation Using High Resolution Full Die Image Data for Inspection

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215896B1 (en) 1995-09-29 2001-04-10 Advanced Micro Devices System for enabling the real-time detection of focus-related defects
US20070131877A9 (en) * 1999-11-29 2007-06-14 Takashi Hiroi Pattern inspection method and system therefor
JP2001331784A (ja) 2000-05-18 2001-11-30 Hitachi Ltd 欠陥分類方法及びその装置
US20020018217A1 (en) 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US6918101B1 (en) * 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
JP2006502422A (ja) 2002-07-12 2006-01-19 ケイデンス デザイン システムズ インコーポレイテッド コンテクスト特定型のマスク検査のための方法及びシステム
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7496874B2 (en) * 2005-12-21 2009-02-24 Inetrnational Business Machines Corporation Semiconductor yield estimation
US7877722B2 (en) 2006-12-19 2011-01-25 Kla-Tencor Corp. Systems and methods for creating inspection recipes
US7962864B2 (en) * 2007-05-24 2011-06-14 Applied Materials, Inc. Stage yield prediction
US8799831B2 (en) * 2007-05-24 2014-08-05 Applied Materials, Inc. Inline defect analysis for sampling and SPC
US8126255B2 (en) * 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
JP5395814B2 (ja) * 2009-02-04 2014-01-22 株式会社日立ハイテクノロジーズ 半導体欠陥統合投影方法および半導体欠陥統合投影機能を実装した欠陥検査支援装置
US8559001B2 (en) 2010-01-11 2013-10-15 Kla-Tencor Corporation Inspection guided overlay metrology
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US20120316855A1 (en) * 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
US9087367B2 (en) * 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8826200B2 (en) * 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
JP6255152B2 (ja) 2012-07-24 2017-12-27 株式会社日立ハイテクノロジーズ 検査装置
US9189844B2 (en) * 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) * 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US8984450B2 (en) * 2013-03-14 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for extracting systematic defects
US9310320B2 (en) * 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9183624B2 (en) 2013-06-19 2015-11-10 Kla-Tencor Corp. Detecting defects on a wafer with run time use of design data
US9715725B2 (en) 2013-12-21 2017-07-25 Kla-Tencor Corp. Context-based inspection for dark field inspection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050004774A1 (en) 2003-07-03 2005-01-06 William Volk Methods and systems for inspection of wafers and reticles using designer intent data
US20080167829A1 (en) 2007-01-05 2008-07-10 Allen Park Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US20150324965A1 (en) 2014-05-12 2015-11-12 Kla-Tencor Corporation Using High Resolution Full Die Image Data for Inspection

Also Published As

Publication number Publication date
CN109314067A (zh) 2019-02-05
JP6906044B2 (ja) 2021-07-21
IL263315A (en) 2018-12-31
IL263315B (en) 2020-08-31
TW201810482A (zh) 2018-03-16
TWI730133B (zh) 2021-06-11
WO2018005132A1 (en) 2018-01-04
JP2019527475A (ja) 2019-09-26
US20180005367A1 (en) 2018-01-04
KR20190014103A (ko) 2019-02-11
US10304177B2 (en) 2019-05-28
CN109314067B (zh) 2020-07-17

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