KR102196413B1 - 선택적인 질화 프로세스를 위한 방법 및 장치 - Google Patents

선택적인 질화 프로세스를 위한 방법 및 장치 Download PDF

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KR102196413B1
KR102196413B1 KR1020197020289A KR20197020289A KR102196413B1 KR 102196413 B1 KR102196413 B1 KR 102196413B1 KR 1020197020289 A KR1020197020289 A KR 1020197020289A KR 20197020289 A KR20197020289 A KR 20197020289A KR 102196413 B1 KR102196413 B1 KR 102196413B1
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process chamber
inches
inlet port
remote plasma
degrees
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KR20190086049A (ko
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매튜 에스. 로거스
로거 커티스
라라 하우릴착
칸펭 라이
버나드 엘. 황
제프리 토빈
크리스토퍼 에스. 올센
말콤 제이. 베반
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H01L21/02247—
    • H01L21/02252—
    • H01L21/28273—
    • H01L21/3211—
    • H01L27/11524—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
KR1020197020289A 2011-08-10 2012-06-29 선택적인 질화 프로세스를 위한 방법 및 장치 Active KR102196413B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161522129P 2011-08-10 2011-08-10
US61/522,129 2011-08-10
US13/536,443 US10049881B2 (en) 2011-08-10 2012-06-28 Method and apparatus for selective nitridation process
US13/536,443 2012-06-28
PCT/US2012/045046 WO2013022530A1 (en) 2011-08-10 2012-06-29 Method and apparatus for selective nitridation process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147004566A Division KR102001245B1 (ko) 2011-08-10 2012-06-29 선택적인 질화 프로세스를 위한 방법 및 장치

Publications (2)

Publication Number Publication Date
KR20190086049A KR20190086049A (ko) 2019-07-19
KR102196413B1 true KR102196413B1 (ko) 2020-12-29

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KR1020197020289A Active KR102196413B1 (ko) 2011-08-10 2012-06-29 선택적인 질화 프로세스를 위한 방법 및 장치
KR1020147004566A Active KR102001245B1 (ko) 2011-08-10 2012-06-29 선택적인 질화 프로세스를 위한 방법 및 장치

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Country Status (6)

Country Link
US (3) US10049881B2 (https=)
JP (1) JP6049720B2 (https=)
KR (2) KR102196413B1 (https=)
CN (3) CN106098551B (https=)
TW (4) TWI645475B (https=)
WO (1) WO2013022530A1 (https=)

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US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
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US10636626B2 (en) 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
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Also Published As

Publication number Publication date
TW201711109A (zh) 2017-03-16
TW201727770A (zh) 2017-08-01
CN106098551B (zh) 2019-08-16
US11581408B2 (en) 2023-02-14
KR20190086049A (ko) 2019-07-19
TWI585865B (zh) 2017-06-01
CN106098551A (zh) 2016-11-09
CN105679633B (zh) 2019-03-15
TW201921514A (zh) 2019-06-01
CN105679633A (zh) 2016-06-15
CN103718278B (zh) 2016-07-06
US20210202702A1 (en) 2021-07-01
US20190088485A1 (en) 2019-03-21
CN103718278A (zh) 2014-04-09
KR102001245B1 (ko) 2019-07-17
TW201308442A (zh) 2013-02-16
US10049881B2 (en) 2018-08-14
TWI560779B (en) 2016-12-01
US20130040444A1 (en) 2013-02-14
TWI645475B (zh) 2018-12-21
TWI703643B (zh) 2020-09-01
KR20140050073A (ko) 2014-04-28
WO2013022530A1 (en) 2013-02-14
US10950698B2 (en) 2021-03-16
JP6049720B2 (ja) 2016-12-21
JP2014527300A (ja) 2014-10-09

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