CN106098551B - 远程等离子体系统 - Google Patents

远程等离子体系统 Download PDF

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Publication number
CN106098551B
CN106098551B CN201610445705.3A CN201610445705A CN106098551B CN 106098551 B CN106098551 B CN 106098551B CN 201610445705 A CN201610445705 A CN 201610445705A CN 106098551 B CN106098551 B CN 106098551B
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China
Prior art keywords
processing chamber
chamber housing
remote plasma
inlet port
channel
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Chinese (zh)
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CN106098551A (zh
Inventor
马修·S·罗杰斯
罗杰·柯蒂斯
劳拉·郝勒查克
肯·旷·赖
伯纳德·L·黄
杰弗里·托宾
克里斯托弗·S·奥尔森
马尔科姆·J·贝文
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
CN201610445705.3A 2011-08-10 2012-06-29 远程等离子体系统 Active CN106098551B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161522129P 2011-08-10 2011-08-10
US61/522,129 2011-08-10
US13/536,443 US10049881B2 (en) 2011-08-10 2012-06-28 Method and apparatus for selective nitridation process
US13/536,443 2012-06-28
CN201280036980.XA CN103718278B (zh) 2011-08-10 2012-06-29 用于选择性氮化工艺的方法与设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201280036980.XA Division CN103718278B (zh) 2011-08-10 2012-06-29 用于选择性氮化工艺的方法与设备

Publications (2)

Publication Number Publication Date
CN106098551A CN106098551A (zh) 2016-11-09
CN106098551B true CN106098551B (zh) 2019-08-16

Family

ID=47668782

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201610445705.3A Active CN106098551B (zh) 2011-08-10 2012-06-29 远程等离子体系统
CN201610052742.8A Active CN105679633B (zh) 2011-08-10 2012-06-29 远程等离子体系统及处理腔室
CN201280036980.XA Active CN103718278B (zh) 2011-08-10 2012-06-29 用于选择性氮化工艺的方法与设备

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201610052742.8A Active CN105679633B (zh) 2011-08-10 2012-06-29 远程等离子体系统及处理腔室
CN201280036980.XA Active CN103718278B (zh) 2011-08-10 2012-06-29 用于选择性氮化工艺的方法与设备

Country Status (6)

Country Link
US (3) US10049881B2 (https=)
JP (1) JP6049720B2 (https=)
KR (2) KR102196413B1 (https=)
CN (3) CN106098551B (https=)
TW (4) TWI645475B (https=)
WO (1) WO2013022530A1 (https=)

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US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US20180294144A1 (en) * 2017-04-10 2018-10-11 Applied Materials, Inc. High deposition rate high quality silicon nitride enabled by remote nitrogen radical source
US10847337B2 (en) * 2018-01-24 2020-11-24 Applied Materials, Inc. Side inject designs for improved radical concentrations
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TWI872604B (zh) * 2018-01-24 2025-02-11 美商應用材料股份有限公司 腔室入口組件、入口構件及包括此腔室入口組件的基板處理系統
US10636626B2 (en) 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
CN113196444B (zh) * 2018-12-20 2024-07-02 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
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US11830725B2 (en) 2020-01-23 2023-11-28 Applied Materials, Inc. Method of cleaning a structure and method of depositing a capping layer in a structure
CN115244672A (zh) * 2020-03-02 2022-10-25 朗姆研究公司 衬底处理系统的冷却物通断型连接器
US20220165547A1 (en) * 2020-11-24 2022-05-26 Applied Materials, Inc. Novel and effective homogenize flow mixing design
US12575360B2 (en) 2021-07-02 2026-03-10 Applied Materials, Inc. Semiconductor processing chamber adapter
CN118160063A (zh) * 2021-10-26 2024-06-07 应用材料公司 具有可调氮化的等离子体处理
US20240047185A1 (en) * 2022-08-03 2024-02-08 Applied Materials, Inc. Shared rps clean and bypass delivery architecture
US20250087506A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Targeted gas delivery via side gas injection

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Also Published As

Publication number Publication date
TW201711109A (zh) 2017-03-16
TW201727770A (zh) 2017-08-01
US11581408B2 (en) 2023-02-14
KR20190086049A (ko) 2019-07-19
TWI585865B (zh) 2017-06-01
CN106098551A (zh) 2016-11-09
CN105679633B (zh) 2019-03-15
TW201921514A (zh) 2019-06-01
CN105679633A (zh) 2016-06-15
CN103718278B (zh) 2016-07-06
US20210202702A1 (en) 2021-07-01
US20190088485A1 (en) 2019-03-21
CN103718278A (zh) 2014-04-09
KR102001245B1 (ko) 2019-07-17
TW201308442A (zh) 2013-02-16
US10049881B2 (en) 2018-08-14
TWI560779B (en) 2016-12-01
US20130040444A1 (en) 2013-02-14
TWI645475B (zh) 2018-12-21
TWI703643B (zh) 2020-09-01
KR20140050073A (ko) 2014-04-28
WO2013022530A1 (en) 2013-02-14
US10950698B2 (en) 2021-03-16
JP6049720B2 (ja) 2016-12-21
KR102196413B1 (ko) 2020-12-29
JP2014527300A (ja) 2014-10-09

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