JP6049720B2 - 選択的窒化プロセスのための方法および装置 - Google Patents

選択的窒化プロセスのための方法および装置 Download PDF

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Publication number
JP6049720B2
JP6049720B2 JP2014525018A JP2014525018A JP6049720B2 JP 6049720 B2 JP6049720 B2 JP 6049720B2 JP 2014525018 A JP2014525018 A JP 2014525018A JP 2014525018 A JP2014525018 A JP 2014525018A JP 6049720 B2 JP6049720 B2 JP 6049720B2
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passage
process chamber
inlet
inches
plasma
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Japanese (ja)
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JP2014527300A5 (https=
JP2014527300A (ja
Inventor
マシュー エス． ロジャーズ，
マシュー エス． ロジャーズ，
ロジャー カーティス，
ロジャー カーティス，
ララ ハウリルチャック，
ララ ハウリルチャック，
ケン カゥン レイ，
ケン カゥン レイ，
バーナード エル． ファン，
バーナード エル． ファン，
ジェフリー トビン，
ジェフリー トビン，
クリストファー エス． オルセン，
クリストファー エス． オルセン，
マルコム ジェー． ベバン，
マルコム ジェー． ベバン，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
JP2014525018A 2011-08-10 2012-06-29 選択的窒化プロセスのための方法および装置 Active JP6049720B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161522129P 2011-08-10 2011-08-10
US61/522,129 2011-08-10
US13/536,443 US10049881B2 (en) 2011-08-10 2012-06-28 Method and apparatus for selective nitridation process
US13/536,443 2012-06-28
PCT/US2012/045046 WO2013022530A1 (en) 2011-08-10 2012-06-29 Method and apparatus for selective nitridation process

Publications (3)

Publication Number Publication Date
JP2014527300A JP2014527300A (ja) 2014-10-09
JP2014527300A5 JP2014527300A5 (https=) 2015-08-13
JP6049720B2 true JP6049720B2 (ja) 2016-12-21

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JP2014525018A Active JP6049720B2 (ja) 2011-08-10 2012-06-29 選択的窒化プロセスのための方法および装置

Country Status (6)

Country Link
US (3) US10049881B2 (https=)
JP (1) JP6049720B2 (https=)
KR (2) KR102196413B1 (https=)
CN (3) CN106098551B (https=)
TW (4) TWI645475B (https=)
WO (1) WO2013022530A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9217201B2 (en) 2013-03-15 2015-12-22 Applied Materials, Inc. Methods for forming layers on semiconductor substrates
US20150020848A1 (en) * 2013-07-19 2015-01-22 Lam Research Corporation Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
US20160042916A1 (en) * 2014-08-06 2016-02-11 Applied Materials, Inc. Post-chamber abatement using upstream plasma sources
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
US10510545B2 (en) 2016-06-20 2019-12-17 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US20180294144A1 (en) * 2017-04-10 2018-10-11 Applied Materials, Inc. High deposition rate high quality silicon nitride enabled by remote nitrogen radical source
US10847337B2 (en) * 2018-01-24 2020-11-24 Applied Materials, Inc. Side inject designs for improved radical concentrations
USD924825S1 (en) 2018-01-24 2021-07-13 Applied Materials, Inc. Chamber inlet
TWI872604B (zh) * 2018-01-24 2025-02-11 美商應用材料股份有限公司 腔室入口組件、入口構件及包括此腔室入口組件的基板處理系統
US10636626B2 (en) 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
CN113196444B (zh) * 2018-12-20 2024-07-02 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
DE102019213591A1 (de) * 2019-09-06 2021-03-11 Singulus Technologies Ag Behandlungsanlage und plasmabehandlungsverfahren
US11830725B2 (en) 2020-01-23 2023-11-28 Applied Materials, Inc. Method of cleaning a structure and method of depositing a capping layer in a structure
CN115244672A (zh) * 2020-03-02 2022-10-25 朗姆研究公司 衬底处理系统的冷却物通断型连接器
US20220165547A1 (en) * 2020-11-24 2022-05-26 Applied Materials, Inc. Novel and effective homogenize flow mixing design
US12575360B2 (en) 2021-07-02 2026-03-10 Applied Materials, Inc. Semiconductor processing chamber adapter
CN118160063A (zh) * 2021-10-26 2024-06-07 应用材料公司 具有可调氮化的等离子体处理
US20240047185A1 (en) * 2022-08-03 2024-02-08 Applied Materials, Inc. Shared rps clean and bypass delivery architecture
US20250087506A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Targeted gas delivery via side gas injection

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169143A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 窒化膜生成装置
US5018479A (en) 1987-09-24 1991-05-28 Reserach Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
JP3631269B2 (ja) * 1993-09-27 2005-03-23 株式会社東芝 励起酸素の供給方法
US5619103A (en) * 1993-11-02 1997-04-08 Wisconsin Alumni Research Foundation Inductively coupled plasma generating devices
US5917434A (en) 1995-06-15 1999-06-29 Trimble Navigation Limited Integrated taximeter/GPS position tracking system
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6027619A (en) * 1996-12-19 2000-02-22 Micron Technology, Inc. Fabrication of field emission array with filtered vacuum cathodic arc deposition
US6039834A (en) * 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
US6286451B1 (en) 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20020007912A1 (en) * 1999-04-12 2002-01-24 Mohammad Kamarehi Coolant for plasma generator
US6263830B1 (en) * 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6388383B1 (en) * 2000-03-31 2002-05-14 Lam Research Corporation Method of an apparatus for obtaining neutral dissociated gas atoms
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6835278B2 (en) * 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
US7094316B1 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US6656288B2 (en) 2000-08-16 2003-12-02 John-Paul F. Cherry Microwave oven cleaner
US6893979B2 (en) 2001-03-15 2005-05-17 International Business Machines Corporation Method for improved plasma nitridation of ultra thin gate dielectrics
US7033462B2 (en) * 2001-11-30 2006-04-25 Nissin Electric Co., Ltd. Vacuum arc vapor deposition process and apparatus
US7354501B2 (en) * 2002-05-17 2008-04-08 Applied Materials, Inc. Upper chamber for high density plasma CVD
BE1015271A3 (fr) * 2003-01-03 2004-12-07 Semika S A Dispersion photosensible a viscosite ajustable pour le depot de metal sur un substrat isolant et son utilisation.
JP4268429B2 (ja) * 2003-03-17 2009-05-27 東京エレクトロン株式会社 基板処理装置および基板処理方法
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
JP2005064037A (ja) * 2003-08-12 2005-03-10 Shibaura Mechatronics Corp プラズマ処理装置及びアッシング方法
US7291568B2 (en) 2003-08-26 2007-11-06 International Business Machines Corporation Method for fabricating a nitrided silicon-oxide gate dielectric
JP4593477B2 (ja) 2003-11-14 2010-12-08 東京エレクトロン株式会社 基板処理方法
JP2007073539A (ja) * 2003-12-18 2007-03-22 Tokyo Electron Ltd 成膜方法およびプラズマ発生方法、基板処理装置
JP4430417B2 (ja) * 2004-01-28 2010-03-10 株式会社アルバック 成膜装置及びそのクリーニング方法
US7531469B2 (en) * 2004-10-23 2009-05-12 Applied Materials, Inc. Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current
KR100669828B1 (ko) * 2005-03-22 2007-01-16 성균관대학교산학협력단 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US20070264443A1 (en) 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
JP4660452B2 (ja) * 2006-09-30 2011-03-30 株式会社フェローテック 拡径管型プラズマ生成装置
US8021514B2 (en) * 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
JP2009239151A (ja) 2008-03-28 2009-10-15 Tokyo Electron Ltd 基板処理装置
US7914603B2 (en) * 2008-06-26 2011-03-29 Mks Instruments, Inc. Particle trap for a plasma source
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
WO2010147937A2 (en) 2009-06-15 2010-12-23 Applied Materials, Inc. Enhancing nand flash floating gate performance
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
KR20110114970A (ko) 2010-04-14 2011-10-20 삼성전자주식회사 플래시 메모리 소자의 제조 방법
US9217201B2 (en) * 2013-03-15 2015-12-22 Applied Materials, Inc. Methods for forming layers on semiconductor substrates
US20190295822A1 (en) * 2018-03-20 2019-09-26 Applied Materials, Inc. Method and apparatus for providing radical species to a processing volume of a processing chamber

Also Published As

Publication number Publication date
TW201711109A (zh) 2017-03-16
TW201727770A (zh) 2017-08-01
CN106098551B (zh) 2019-08-16
US11581408B2 (en) 2023-02-14
KR20190086049A (ko) 2019-07-19
TWI585865B (zh) 2017-06-01
CN106098551A (zh) 2016-11-09
CN105679633B (zh) 2019-03-15
TW201921514A (zh) 2019-06-01
CN105679633A (zh) 2016-06-15
CN103718278B (zh) 2016-07-06
US20210202702A1 (en) 2021-07-01
US20190088485A1 (en) 2019-03-21
CN103718278A (zh) 2014-04-09
KR102001245B1 (ko) 2019-07-17
TW201308442A (zh) 2013-02-16
US10049881B2 (en) 2018-08-14
TWI560779B (en) 2016-12-01
US20130040444A1 (en) 2013-02-14
TWI645475B (zh) 2018-12-21
TWI703643B (zh) 2020-09-01
KR20140050073A (ko) 2014-04-28
WO2013022530A1 (en) 2013-02-14
US10950698B2 (en) 2021-03-16
KR102196413B1 (ko) 2020-12-29
JP2014527300A (ja) 2014-10-09

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