KR102179717B1 - 플라즈마와 증기를 이용한 건식 세정 장치 - Google Patents

플라즈마와 증기를 이용한 건식 세정 장치 Download PDF

Info

Publication number
KR102179717B1
KR102179717B1 KR1020190057817A KR20190057817A KR102179717B1 KR 102179717 B1 KR102179717 B1 KR 102179717B1 KR 1020190057817 A KR1020190057817 A KR 1020190057817A KR 20190057817 A KR20190057817 A KR 20190057817A KR 102179717 B1 KR102179717 B1 KR 102179717B1
Authority
KR
South Korea
Prior art keywords
steam
valve
chamber
plasma
dry cleaning
Prior art date
Application number
KR1020190057817A
Other languages
English (en)
Korean (ko)
Inventor
이길광
임두호
오상룡
박재양
Original Assignee
무진전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 무진전자 주식회사 filed Critical 무진전자 주식회사
Priority to KR1020190057817A priority Critical patent/KR102179717B1/ko
Priority to PCT/KR2020/005422 priority patent/WO2020235822A1/ko
Priority to CN202080034382.3A priority patent/CN113811400B/zh
Priority to TW109116153A priority patent/TWI748453B/zh
Application granted granted Critical
Publication of KR102179717B1 publication Critical patent/KR102179717B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1020190057817A 2019-05-17 2019-05-17 플라즈마와 증기를 이용한 건식 세정 장치 KR102179717B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020190057817A KR102179717B1 (ko) 2019-05-17 2019-05-17 플라즈마와 증기를 이용한 건식 세정 장치
PCT/KR2020/005422 WO2020235822A1 (ko) 2019-05-17 2020-04-24 플라즈마와 증기를 이용한 건식 세정 장치
CN202080034382.3A CN113811400B (zh) 2019-05-17 2020-04-24 使用等离子体和蒸汽的干式清洁设备
TW109116153A TWI748453B (zh) 2019-05-17 2020-05-15 使用電漿及蒸氣之乾式清潔設備

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190057817A KR102179717B1 (ko) 2019-05-17 2019-05-17 플라즈마와 증기를 이용한 건식 세정 장치

Publications (1)

Publication Number Publication Date
KR102179717B1 true KR102179717B1 (ko) 2020-11-17

Family

ID=73458131

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190057817A KR102179717B1 (ko) 2019-05-17 2019-05-17 플라즈마와 증기를 이용한 건식 세정 장치

Country Status (4)

Country Link
KR (1) KR102179717B1 (zh)
CN (1) CN113811400B (zh)
TW (1) TWI748453B (zh)
WO (1) WO2020235822A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230155692A (ko) 2022-05-04 2023-11-13 엘에스이 주식회사 증기 공급 장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230151810A (ko) * 2022-04-26 2023-11-02 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070044081A (ko) * 2005-10-24 2007-04-27 삼성전자주식회사 반도체 기판의 처리 방법
KR100784661B1 (ko) 2006-12-26 2007-12-12 피에스케이 주식회사 반도체 소자의 제조방법
KR20080090026A (ko) * 2007-04-03 2008-10-08 주식회사 소로나 박막 코팅 장치 및 방법
KR20090071368A (ko) 2007-12-27 2009-07-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 기억 매체
JP2010225847A (ja) * 2009-03-24 2010-10-07 Tokyo Electron Ltd 真空処理装置，減圧処理方法，基板処理方法
KR20130094481A (ko) * 2012-02-16 2013-08-26 주식회사 다원시스 복합 세정장치 및 방법
KR20150109288A (ko) * 2014-03-19 2015-10-01 에이에스엠 아이피 홀딩 비.브이. 플라즈마 전-세정 모듈 및 공정
KR20190032033A (ko) * 2017-09-19 2019-03-27 무진전자 주식회사 인시튜 건식 세정 방법 및 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100696378B1 (ko) * 2005-04-13 2007-03-19 삼성전자주식회사 반도체 기판을 세정하는 장치 및 방법
KR20080019141A (ko) * 2006-08-25 2008-03-03 삼성전자주식회사 화학기상증착설비
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
JP5707144B2 (ja) * 2011-01-18 2015-04-22 東京エレクトロン株式会社 基板処理装置のドライクリーニング方法及び金属膜の除去方法
JP2015211156A (ja) * 2014-04-28 2015-11-24 東京エレクトロン株式会社 ドライクリーニング方法及びプラズマ処理装置
US10358715B2 (en) * 2016-06-03 2019-07-23 Applied Materials, Inc. Integrated cluster tool for selective area deposition
KR101981738B1 (ko) * 2017-09-19 2019-05-27 무진전자 주식회사 기판 처리 방법 및 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070044081A (ko) * 2005-10-24 2007-04-27 삼성전자주식회사 반도체 기판의 처리 방법
KR100784661B1 (ko) 2006-12-26 2007-12-12 피에스케이 주식회사 반도체 소자의 제조방법
KR20080090026A (ko) * 2007-04-03 2008-10-08 주식회사 소로나 박막 코팅 장치 및 방법
KR20090071368A (ko) 2007-12-27 2009-07-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 기억 매체
JP2010225847A (ja) * 2009-03-24 2010-10-07 Tokyo Electron Ltd 真空処理装置，減圧処理方法，基板処理方法
KR20130094481A (ko) * 2012-02-16 2013-08-26 주식회사 다원시스 복합 세정장치 및 방법
KR20150109288A (ko) * 2014-03-19 2015-10-01 에이에스엠 아이피 홀딩 비.브이. 플라즈마 전-세정 모듈 및 공정
KR20190032033A (ko) * 2017-09-19 2019-03-27 무진전자 주식회사 인시튜 건식 세정 방법 및 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230155692A (ko) 2022-05-04 2023-11-13 엘에스이 주식회사 증기 공급 장치

Also Published As

Publication number Publication date
TW202109705A (zh) 2021-03-01
WO2020235822A1 (ko) 2020-11-26
TWI748453B (zh) 2021-12-01
CN113811400A (zh) 2021-12-17
CN113811400B (zh) 2023-07-25

Similar Documents

Publication Publication Date Title
JP2019515505A (ja) プラズマ処理チャンバでのインシトゥチャンバ洗浄効率向上のためのプラズマ処理プロセス
US20030183244A1 (en) Method of cleaning a semiconductor processing chamber
CN111133555B (zh) 基板处理方法和装置
US20230084901A1 (en) Ultrahigh selective nitride etch to form finfet devices
US20040000321A1 (en) Chamber clean method using remote and in situ plasma cleaning systems
KR102003361B1 (ko) 인시튜 건식 세정 방법 및 장치
KR102179717B1 (ko) 플라즈마와 증기를 이용한 건식 세정 장치
KR102178593B1 (ko) 플라즈마와 증기를 이용한 건식 세정 방법
KR102606417B1 (ko) 에칭 방법, 대미지층의 제거 방법, 및 기억 매체
KR20190063941A (ko) 폴리 실리콘을 선택적으로 제거하는 건식 세정 장치 및 방법
WO2020066172A1 (ja) エッチング方法、エッチング残渣の除去方法、および記憶媒体
KR102003362B1 (ko) 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법
KR102140722B1 (ko) 대기압 플라즈마와 스팀을 이용한 건식 세정 장치 및 방법
KR20080062112A (ko) 박막 증착 장비의 세정 방법
US20130095665A1 (en) Systems and methods for processing substrates
KR101300998B1 (ko) 기판처리시스템
KR101311277B1 (ko) 기판처리시스템
KR20080072263A (ko) 기판 처리 장치
KR20080072252A (ko) 기판 처리 장치
KR20100033040A (ko) 반도체 소자의 질화막 형성 방법

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant