KR102117296B1 - 이온 주입 방법 - Google Patents

이온 주입 방법 Download PDF

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Publication number
KR102117296B1
KR102117296B1 KR1020130168089A KR20130168089A KR102117296B1 KR 102117296 B1 KR102117296 B1 KR 102117296B1 KR 1020130168089 A KR1020130168089 A KR 1020130168089A KR 20130168089 A KR20130168089 A KR 20130168089A KR 102117296 B1 KR102117296 B1 KR 102117296B1
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South Korea
Prior art keywords
composition
semiconductor substrate
photoresist
substrate
photoresist pattern
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KR1020130168089A
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English (en)
Korean (ko)
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KR20140088031A (ko
Inventor
쳉-바이 슈
청 한 우
청동원
요시히로 야마모토
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롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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Publication of KR20140088031A publication Critical patent/KR20140088031A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130168089A 2012-12-31 2013-12-31 이온 주입 방법 Active KR102117296B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261748058P 2012-12-31 2012-12-31
US61/748,058 2012-12-31

Publications (2)

Publication Number Publication Date
KR20140088031A KR20140088031A (ko) 2014-07-09
KR102117296B1 true KR102117296B1 (ko) 2020-06-01

Family

ID=51017642

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130168089A Active KR102117296B1 (ko) 2012-12-31 2013-12-31 이온 주입 방법

Country Status (5)

Country Link
US (1) US9666436B2 (https=)
JP (1) JP6448903B2 (https=)
KR (1) KR102117296B1 (https=)
CN (1) CN103943472B (https=)
TW (1) TWI556290B (https=)

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JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
JP2014143415A (ja) 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法
US9263551B2 (en) * 2013-10-11 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Simultaneous formation of source/drain openings with different profiles
TWI605062B (zh) 2013-12-30 2017-11-11 羅門哈斯電子材料有限公司 光阻圖案修整組成物及方法
EP3391140A1 (en) 2015-12-14 2018-10-24 ASML Netherlands B.V. A membrane assembly
JP6858777B2 (ja) 2015-12-14 2021-04-14 エーエスエムエル ネザーランズ ビー．ブイ． Ｅｕｖリソグラフィのための膜
US10056256B2 (en) * 2016-03-16 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of priming photoresist before application of a shrink material in a lithography process
US10658180B1 (en) * 2018-11-01 2020-05-19 International Business Machines Corporation EUV pattern transfer with ion implantation and reduced impact of resist residue

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20070152305A1 (en) 2005-12-30 2007-07-05 Hynix Semiconductor, Inc. Method for forming a mask pattern for ion-implantation
JP2009071049A (ja) 2007-09-13 2009-04-02 Sanyo Electric Co Ltd 半導体基板への不純物注入方法
US20120028434A1 (en) 2010-07-27 2012-02-02 Hyung-Rae Lee Method of manufacturing semiconductor device using acid diffusion

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US5272026A (en) * 1987-12-18 1993-12-21 Ucb S.A. Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article
US6180320B1 (en) 1998-03-09 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
JP2000035672A (ja) * 1998-03-09 2000-02-02 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP4210237B2 (ja) * 1998-05-25 2009-01-14 ダイセル化学工業株式会社 フォトレジスト用化合物およびフォトレジスト用樹脂組成物
JP4329216B2 (ja) 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
US6610609B2 (en) * 2000-05-02 2003-08-26 Shipley Company, L.L.C. Compatibilization treatment
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US6274289B1 (en) 2000-06-16 2001-08-14 Advanced Micro Devices, Inc. Chemical resist thickness reduction process
JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
US6683202B2 (en) * 2001-02-22 2004-01-27 Tokyo Ohka, Kogyo Co., Ltd. Fluorine-containing monomeric ester compound for base resin in photoresist composition
JP2002299202A (ja) 2001-03-29 2002-10-11 Sony Corp 半導体装置の製造方法
JP3476080B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
JP3953822B2 (ja) 2002-01-25 2007-08-08 富士通株式会社 レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP4324433B2 (ja) * 2003-09-17 2009-09-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
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WO2008153155A1 (ja) * 2007-06-15 2008-12-18 Fujifilm Corporation パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
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US8883407B2 (en) * 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8252673B2 (en) * 2009-12-21 2012-08-28 International Business Machines Corporation Spin-on formulation and method for stripping an ion implanted photoresist
JP2011222834A (ja) * 2010-04-12 2011-11-04 Hoya Corp ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法
JP5445430B2 (ja) * 2010-11-15 2014-03-19 信越化学工業株式会社 パターン形成方法
TWI510854B (zh) * 2011-12-31 2015-12-01 羅門哈斯電子材料有限公司 光阻劑圖案修整方法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
JP2014143415A (ja) * 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070152305A1 (en) 2005-12-30 2007-07-05 Hynix Semiconductor, Inc. Method for forming a mask pattern for ion-implantation
JP2009071049A (ja) 2007-09-13 2009-04-02 Sanyo Electric Co Ltd 半導体基板への不純物注入方法
US20120028434A1 (en) 2010-07-27 2012-02-02 Hyung-Rae Lee Method of manufacturing semiconductor device using acid diffusion

Also Published As

Publication number Publication date
CN103943472B (zh) 2017-06-09
KR20140088031A (ko) 2014-07-09
JP6448903B2 (ja) 2019-01-09
TWI556290B (zh) 2016-11-01
TW201501183A (zh) 2015-01-01
JP2014170922A (ja) 2014-09-18
CN103943472A (zh) 2014-07-23
US20140187027A1 (en) 2014-07-03
US9666436B2 (en) 2017-05-30

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