KR102091908B1 - 리소그래피 장치 및 물품 제조 방법 - Google Patents

리소그래피 장치 및 물품 제조 방법 Download PDF

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KR102091908B1
KR102091908B1 KR1020170020309A KR20170020309A KR102091908B1 KR 102091908 B1 KR102091908 B1 KR 102091908B1 KR 1020170020309 A KR1020170020309 A KR 1020170020309A KR 20170020309 A KR20170020309 A KR 20170020309A KR 102091908 B1 KR102091908 B1 KR 102091908B1
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South Korea
Prior art keywords
substrate
electrode
lithographic apparatus
electrode structure
electrodes
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English (en)
Korean (ko)
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KR20170096961A (ko
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마사미 요네카와
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020170020309A 2016-02-17 2017-02-15 리소그래피 장치 및 물품 제조 방법 Active KR102091908B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016028297A JP6643135B2 (ja) 2016-02-17 2016-02-17 リソグラフィ装置および物品製造方法
JPJP-P-2016-028297 2016-02-17

Publications (2)

Publication Number Publication Date
KR20170096961A KR20170096961A (ko) 2017-08-25
KR102091908B1 true KR102091908B1 (ko) 2020-03-20

Family

ID=59561429

Family Applications (1)

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KR1020170020309A Active KR102091908B1 (ko) 2016-02-17 2017-02-15 리소그래피 장치 및 물품 제조 방법

Country Status (6)

Country Link
US (1) US10228624B2 (enExample)
JP (1) JP6643135B2 (enExample)
KR (1) KR102091908B1 (enExample)
CN (1) CN107092163B (enExample)
SG (1) SG10201700942WA (enExample)
TW (1) TWI663487B (enExample)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP6732475B2 (ja) * 2016-02-29 2020-07-29 キヤノン株式会社 インプリント装置、物品の製造方法、保持装置および露光装置
US10722925B2 (en) * 2017-12-04 2020-07-28 Suss Micro Tec Photomask Equipment Gmbh & Co Kg Treatment head, treatment system and method for treating a local surface area of a substrate
JP7348454B2 (ja) * 2018-10-01 2023-09-21 東京エレクトロン株式会社 基板表面から異物を静電的に除去するための装置及び方法
US11506985B2 (en) * 2019-04-29 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same for preventing photomask particulate contamination
JP7495814B2 (ja) * 2020-05-13 2024-06-05 キヤノン株式会社 インプリント装置、および物品の製造方法
CN116917805A (zh) * 2021-01-20 2023-10-20 应用材料公司 防滑印模降落环
KR102542639B1 (ko) * 2021-02-10 2023-06-12 성균관대학교산학협력단 미세 패턴 형성 장치 및 방법
KR102528880B1 (ko) * 2021-02-16 2023-05-03 성균관대학교산학협력단 전기수력학 불안정성을 이용한 패턴제작기술의 미세 구조체 사이의 2차 간섭효과에 의한 초미세구조체 제작 및 초소수성표면 형성방법
US12463042B2 (en) 2022-05-31 2025-11-04 Canon Kabushiki Kaisha Planarization system and method

Citations (5)

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US7558045B1 (en) 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
JP2009246046A (ja) 2008-03-28 2009-10-22 Canon Inc 露光装置及びデバイス製造方法
US20120080820A1 (en) 2010-10-04 2012-04-05 Canon Kabushiki Kaisha Imprinting method
JP2015046605A (ja) 2012-10-04 2015-03-12 大日本印刷株式会社 インプリント方法およびインプリント装置
JP2015149390A (ja) 2014-02-06 2015-08-20 キヤノン株式会社 インプリント装置、型、および物品の製造方法

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JP2000228439A (ja) * 1999-02-05 2000-08-15 Advantest Corp ステージ上のパーティクル除去方法及び清掃板
CN1222918C (zh) * 2001-08-27 2005-10-12 佳能株式会社 布线基板及使用该布线基板的图象显示装置
JP2008258490A (ja) * 2007-04-06 2008-10-23 Canon Inc 露光装置及び原版
US8125603B2 (en) * 2007-05-17 2012-02-28 Lg Display Co., Ltd. In-plane switching mode liquid crystal display device and method for fabricating the same
JP2009302234A (ja) * 2008-06-12 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
JP2011040464A (ja) * 2009-08-07 2011-02-24 Canon Inc 異物除去装置、露光装置及びデバイス製造方法
JP5846572B2 (ja) * 2011-07-27 2016-01-20 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置および極端紫外光生成装置の制御方法
JP2013197465A (ja) * 2012-03-22 2013-09-30 Toshiba Corp 静電チャック装置および露光装置
DE102012017669A1 (de) * 2012-09-07 2014-03-13 Valeo Schalter Und Sensoren Gmbh Anordnung mit einem Verkleidungsteil und einem Radarsensor, Kraftfahrzeug und Verfahren zum Herstellen einer Anordnung
JP6171412B2 (ja) 2013-03-06 2017-08-02 大日本印刷株式会社 インプリント方法、インプリント用のモールドおよびインプリント装置
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Publication number Priority date Publication date Assignee Title
US7558045B1 (en) 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
JP2009246046A (ja) 2008-03-28 2009-10-22 Canon Inc 露光装置及びデバイス製造方法
US20100068659A1 (en) 2008-03-28 2010-03-18 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US20120080820A1 (en) 2010-10-04 2012-04-05 Canon Kabushiki Kaisha Imprinting method
JP2015046605A (ja) 2012-10-04 2015-03-12 大日本印刷株式会社 インプリント方法およびインプリント装置
JP2015149390A (ja) 2014-02-06 2015-08-20 キヤノン株式会社 インプリント装置、型、および物品の製造方法

Also Published As

Publication number Publication date
JP6643135B2 (ja) 2020-02-12
JP2017147343A (ja) 2017-08-24
CN107092163B (zh) 2020-12-29
US10228624B2 (en) 2019-03-12
US20170235234A1 (en) 2017-08-17
TWI663487B (zh) 2019-06-21
TW201740222A (zh) 2017-11-16
KR20170096961A (ko) 2017-08-25
CN107092163A (zh) 2017-08-25
SG10201700942WA (en) 2017-09-28

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