KR102062541B1 - 전하 펌프 레귤레이터 회로 - Google Patents
전하 펌프 레귤레이터 회로 Download PDFInfo
- Publication number
- KR102062541B1 KR102062541B1 KR1020157000606A KR20157000606A KR102062541B1 KR 102062541 B1 KR102062541 B1 KR 102062541B1 KR 1020157000606 A KR1020157000606 A KR 1020157000606A KR 20157000606 A KR20157000606 A KR 20157000606A KR 102062541 B1 KR102062541 B1 KR 102062541B1
- Authority
- KR
- South Korea
- Prior art keywords
- charge pump
- voltage
- amplitude
- frequency
- inverter stages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/544,815 | 2012-07-09 | ||
| US13/544,815 US9041370B2 (en) | 2012-07-09 | 2012-07-09 | Charge pump regulator circuit with a variable drive voltage ring oscillator |
| PCT/US2013/040719 WO2014011322A1 (en) | 2012-07-09 | 2013-05-13 | Charge pump regulator circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150036033A KR20150036033A (ko) | 2015-04-07 |
| KR102062541B1 true KR102062541B1 (ko) | 2020-01-06 |
Family
ID=48808665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157000606A Expired - Fee Related KR102062541B1 (ko) | 2012-07-09 | 2013-05-13 | 전하 펌프 레귤레이터 회로 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9041370B2 (https=) |
| EP (2) | EP2870517B8 (https=) |
| JP (1) | JP6306000B2 (https=) |
| KR (1) | KR102062541B1 (https=) |
| CN (2) | CN104541220B (https=) |
| TW (1) | TWI619336B (https=) |
| WO (2) | WO2014011322A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
| US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
| US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
| US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
| US9041370B2 (en) * | 2012-07-09 | 2015-05-26 | Silanna Semiconductor U.S.A., Inc. | Charge pump regulator circuit with a variable drive voltage ring oscillator |
| US9081399B2 (en) | 2012-07-09 | 2015-07-14 | Silanna Semiconductor U.S.A., Inc. | Charge pump regulator circuit with variable amplitude control |
| US9491151B2 (en) * | 2015-01-07 | 2016-11-08 | Ememory Technology Inc. | Memory apparatus, charge pump circuit and voltage pumping method thereof |
| US10014767B2 (en) * | 2016-03-25 | 2018-07-03 | Intel Corporation | Bi-directional multi-mode charge pump |
| CN106100320B (zh) | 2016-06-30 | 2020-12-22 | 唯捷创芯(天津)电子技术股份有限公司 | 一种频率可调的电荷泵单元、芯片及通信终端 |
| CN107528582A (zh) * | 2017-08-31 | 2017-12-29 | 广东工业大学 | 一种用于射频开关的功耗控制电路 |
| CN108092503B (zh) * | 2018-01-18 | 2019-11-19 | 上海贝岭股份有限公司 | 电荷泵电路 |
| JP6952644B2 (ja) * | 2018-05-14 | 2021-10-20 | 株式会社東芝 | 半導体集積回路 |
| US10541605B2 (en) * | 2018-12-12 | 2020-01-21 | Intel Corporation | Charge pump system including output efficiency control |
| CN111735633B (zh) * | 2020-06-10 | 2022-11-15 | 中国航发北京航科发动机控制系统科技有限公司 | 一种燃油电控调节器压力载荷加载和应变在线测试系统 |
| CN111817553B (zh) * | 2020-07-01 | 2021-12-24 | 浙江驰拓科技有限公司 | 片内式电荷泵电路 |
| CN112039335A (zh) * | 2020-08-21 | 2020-12-04 | 厦门半导体工业技术研发有限公司 | 一种电压发生器和半导体器件 |
| CN112165250B (zh) * | 2020-10-12 | 2022-04-05 | 唯捷创芯(天津)电子技术股份有限公司 | 一种电荷泵电路、芯片及通信终端 |
| KR102742004B1 (ko) * | 2022-08-03 | 2024-12-12 | 울산과학기술원 | 하이브리드제어 고전압 생성기 및 자극 발생 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010004717A (ja) | 2008-06-23 | 2010-01-07 | Toshiba Corp | 定電圧昇圧電源 |
| US20100264981A1 (en) | 2009-02-25 | 2010-10-21 | Texas Instruments Deutschland Gmbh | Charge pump with self-timing and method |
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| US4656369A (en) * | 1984-09-17 | 1987-04-07 | Texas Instruments Incorporated | Ring oscillator substrate bias generator with precharge voltage feedback control |
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| JP3170038B2 (ja) | 1992-05-19 | 2001-05-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5301097A (en) | 1992-06-10 | 1994-04-05 | Intel Corporation | Multi-staged charge-pump with staggered clock phases for providing high current capability |
| KR0132023B1 (ko) | 1993-12-30 | 1998-04-14 | 김주용 | 다단 펌프회로를 이용한 전압 발생기 |
| WO1998027477A1 (en) * | 1996-12-18 | 1998-06-25 | Macronix International Co., Ltd. | A regulator system for charge pump circuits |
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| JP3223504B2 (ja) * | 1998-03-31 | 2001-10-29 | 日本電気株式会社 | 昇圧回路 |
| US6160723A (en) | 1999-03-01 | 2000-12-12 | Micron Technology, Inc. | Charge pump circuit including level shifters for threshold voltage cancellation and clock signal boosting, and memory device using same |
| KR100300077B1 (ko) | 1999-07-28 | 2001-11-01 | 김영환 | 가변 오실레이션 주기를 갖는 차지펌프회로 |
| US20070188168A1 (en) | 1999-08-26 | 2007-08-16 | Stanley James G | Magnetic sensor |
| JP2001069747A (ja) | 1999-08-27 | 2001-03-16 | Texas Instr Japan Ltd | 昇圧回路 |
| JP3769718B2 (ja) * | 1999-09-13 | 2006-04-26 | ローム株式会社 | 電圧制御発振回路 |
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| KR100374644B1 (ko) | 2001-01-27 | 2003-03-03 | 삼성전자주식회사 | 승압 전압의 조절이 가능한 전압 승압 회로 |
| US6593725B1 (en) * | 2001-02-22 | 2003-07-15 | Cypress Semiconductor Corp. | Feed-forward control for DC-DC converters |
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| US7027793B2 (en) | 2002-11-15 | 2006-04-11 | Qualcomm Incorporated | Direct conversion with variable amplitude LO signals |
| JP2004348806A (ja) * | 2003-03-26 | 2004-12-09 | Sharp Corp | 半導体記憶装置およびそれを備えた携帯電子機器 |
| DE60304311T2 (de) | 2003-06-24 | 2006-12-21 | Stmicroelectronics S.R.L., Agrate Brianza | Verbrauchsarmer Regler für eine Spannungserzeugung mittels Ladungspumpe |
| KR100586545B1 (ko) | 2004-02-04 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 오실레이터용 전원공급회로 및 이를이용한 전압펌핑장치 |
| KR100626387B1 (ko) | 2004-09-22 | 2006-09-20 | 삼성전자주식회사 | 반도체 메모리 장치의 발진회로 |
| KR100665006B1 (ko) | 2004-11-08 | 2007-01-09 | 삼성전기주식회사 | 위상 동기 루프 장치 |
| US7151413B2 (en) | 2004-12-02 | 2006-12-19 | Via Technologies Inc. | Low noise charge pump for PLL-based frequence synthesis |
| ATE402517T1 (de) | 2004-12-30 | 2008-08-15 | Koninkl Philips Electronics Nv | Überwachen der temperaturabhängigkeit der externen kondensatoren einer ladungspumpe und darauf beruhende verbesserte ladungspumpen |
| JP2006339727A (ja) * | 2005-05-31 | 2006-12-14 | Toyota Industries Corp | 電圧制御発振器 |
| US20080054990A1 (en) | 2006-08-30 | 2008-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Charge pump method and architecture |
| US7504877B1 (en) | 2006-12-15 | 2009-03-17 | Xilinx, Inc. | Charge pump and voltage regulator for body bias voltage |
| KR20080100539A (ko) | 2007-05-14 | 2008-11-19 | 주식회사 하이닉스반도체 | 반도체 소자의 내부전압 발생기 및 발생방법 |
| US20100156512A1 (en) | 2007-06-13 | 2010-06-24 | Semiconductor Components Industries, L.L.C. | Charge pump controller and method therefor |
| JP4908386B2 (ja) * | 2007-11-30 | 2012-04-04 | コーセル株式会社 | スイッチング電源装置及びその駆動方法 |
| JP2009212976A (ja) * | 2008-03-05 | 2009-09-17 | Nagoya Industrial Science Research Inst | リング発振器 |
| JP5011182B2 (ja) * | 2008-03-24 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | チャージポンプ回路 |
| JP5332328B2 (ja) * | 2008-06-11 | 2013-11-06 | 富士通株式会社 | クロック及びデータ復元回路 |
| US7952378B2 (en) | 2008-12-31 | 2011-05-31 | Texas Instruments Incorporated | Tunable stress technique for reliability degradation measurement |
| US20100201451A1 (en) | 2009-02-06 | 2010-08-12 | Stephen Wu | Method and system for frequency calibration of a voltage controlled ring oscillator |
| US20100283533A1 (en) * | 2009-05-05 | 2010-11-11 | Numonyx Bv | Charge pump circuit and method |
| JP5428560B2 (ja) * | 2009-06-16 | 2014-02-26 | 凸版印刷株式会社 | 電源回路 |
| KR101193344B1 (ko) | 2009-06-23 | 2012-10-26 | 삼성전기주식회사 | 분수-분주 주파수 합성기 및 그 방법 |
| JP5015210B2 (ja) * | 2009-08-14 | 2012-08-29 | 株式会社半導体理工学研究センター | 高周波信号生成回路 |
| US20110148509A1 (en) | 2009-12-17 | 2011-06-23 | Feng Pan | Techniques to Reduce Charge Pump Overshoot |
| JP5272254B2 (ja) * | 2009-12-25 | 2013-08-28 | 邦彦 公山 | 差動リング発振器型電圧制御発振器 |
| JP2011229240A (ja) * | 2010-04-16 | 2011-11-10 | Elpida Memory Inc | 半導体昇圧回路 |
| CN102299626A (zh) | 2010-06-24 | 2011-12-28 | 飞思卡尔半导体公司 | 用于直流至直流变换的方法和装置 |
| US8111107B2 (en) | 2010-07-07 | 2012-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump control scheme |
| US8274322B2 (en) | 2010-10-18 | 2012-09-25 | National Tsing Hua University | Charge pump with low noise and high output current and voltage |
| JP2012191745A (ja) | 2011-03-10 | 2012-10-04 | Semiconductor Components Industries Llc | 電源回路システム |
| US8829980B2 (en) | 2011-03-21 | 2014-09-09 | Analog Devices, Inc. | Phased-array charge pump supply |
| US9041370B2 (en) * | 2012-07-09 | 2015-05-26 | Silanna Semiconductor U.S.A., Inc. | Charge pump regulator circuit with a variable drive voltage ring oscillator |
-
2012
- 2012-07-09 US US13/544,815 patent/US9041370B2/en active Active
- 2012-12-19 US US13/720,589 patent/US8497670B1/en not_active Expired - Fee Related
-
2013
- 2013-05-13 CN CN201380036711.8A patent/CN104541220B/zh not_active Expired - Fee Related
- 2013-05-13 EP EP13817201.0A patent/EP2870517B8/en not_active Not-in-force
- 2013-05-13 JP JP2015521617A patent/JP6306000B2/ja not_active Expired - Fee Related
- 2013-05-13 WO PCT/US2013/040719 patent/WO2014011322A1/en not_active Ceased
- 2013-05-13 KR KR1020157000606A patent/KR102062541B1/ko not_active Expired - Fee Related
- 2013-06-07 TW TW102120303A patent/TWI619336B/zh not_active IP Right Cessation
- 2013-07-08 WO PCT/US2013/049623 patent/WO2014011572A1/en not_active Ceased
- 2013-07-08 CN CN201380035290.7A patent/CN104603711B/zh not_active Expired - Fee Related
- 2013-07-08 EP EP13817056.8A patent/EP2872959A4/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010004717A (ja) | 2008-06-23 | 2010-01-07 | Toshiba Corp | 定電圧昇圧電源 |
| US20100264981A1 (en) | 2009-02-25 | 2010-10-21 | Texas Instruments Deutschland Gmbh | Charge pump with self-timing and method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2870517A1 (en) | 2015-05-13 |
| JP2015522242A (ja) | 2015-08-03 |
| TWI619336B (zh) | 2018-03-21 |
| EP2872959A4 (en) | 2016-03-09 |
| JP6306000B2 (ja) | 2018-04-04 |
| CN104603711A (zh) | 2015-05-06 |
| EP2870517A4 (en) | 2016-03-09 |
| EP2870517B1 (en) | 2018-02-07 |
| KR20150036033A (ko) | 2015-04-07 |
| TW201404021A (zh) | 2014-01-16 |
| US8497670B1 (en) | 2013-07-30 |
| EP2870517B8 (en) | 2018-03-21 |
| WO2014011572A1 (en) | 2014-01-16 |
| WO2014011322A1 (en) | 2014-01-16 |
| US20140009135A1 (en) | 2014-01-09 |
| EP2872959A1 (en) | 2015-05-20 |
| US9041370B2 (en) | 2015-05-26 |
| CN104541220B (zh) | 2017-10-31 |
| CN104603711B (zh) | 2017-03-08 |
| CN104541220A (zh) | 2015-04-22 |
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