KR102019529B1 - 기판 클램핑 시스템 및 기판 클램핑 시스템 동작 방법 - Google Patents

기판 클램핑 시스템 및 기판 클램핑 시스템 동작 방법 Download PDF

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Publication number
KR102019529B1
KR102019529B1 KR1020147015228A KR20147015228A KR102019529B1 KR 102019529 B1 KR102019529 B1 KR 102019529B1 KR 1020147015228 A KR1020147015228 A KR 1020147015228A KR 20147015228 A KR20147015228 A KR 20147015228A KR 102019529 B1 KR102019529 B1 KR 102019529B1
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South Korea
Prior art keywords
power supply
voltage
center tap
clamping
baseplate
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KR1020147015228A
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Korean (ko)
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KR20140097307A (ko
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존 드루웨리
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147015228A 2011-11-04 2012-09-28 기판 클램핑 시스템 및 기판 클램핑 시스템 동작 방법 Active KR102019529B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161555677P 2011-11-04 2011-11-04
US61/555,677 2011-11-04
US13/410,243 US9076831B2 (en) 2011-11-04 2012-03-01 Substrate clamping system and method for operating the same
US13/410,243 2012-03-01
PCT/US2012/058067 WO2013066542A1 (en) 2011-11-04 2012-09-28 Substrate clamping system and method for operating the same

Publications (2)

Publication Number Publication Date
KR20140097307A KR20140097307A (ko) 2014-08-06
KR102019529B1 true KR102019529B1 (ko) 2019-09-06

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KR1020147015228A Active KR102019529B1 (ko) 2011-11-04 2012-09-28 기판 클램핑 시스템 및 기판 클램핑 시스템 동작 방법

Country Status (5)

Country Link
US (1) US9076831B2 (https=)
JP (1) JP6133882B2 (https=)
KR (1) KR102019529B1 (https=)
TW (1) TWI576936B (https=)
WO (1) WO2013066542A1 (https=)

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US10236202B2 (en) * 2013-11-11 2019-03-19 Diablo Capital, Inc. System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
US9754809B2 (en) * 2013-11-11 2017-09-05 Western Alliance Bank Tri-modal carrier for a semiconductive wafer
US9779919B2 (en) * 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6567943B2 (ja) * 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR20170039781A (ko) * 2015-10-01 2017-04-12 삼성디스플레이 주식회사 정전척 및 이를 포함하는 기판 처리 장치
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10892179B2 (en) * 2016-11-08 2021-01-12 Lam Research Corporation Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
CN107858666A (zh) * 2017-12-13 2018-03-30 北京创昱科技有限公司 一种真空镀膜用集成腔室
US20200048770A1 (en) * 2018-08-07 2020-02-13 Lam Research Corporation Chemical vapor deposition tool for preventing or suppressing arcing
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR102715485B1 (ko) * 2018-11-22 2024-10-11 토카막 에너지 리미티드 부분적으로 절연된 초전도 자석의 빠른 덤프
KR20210022879A (ko) 2019-08-21 2021-03-04 세메스 주식회사 기판 지지 유닛 및 이를 구비하는 기판 처리 시스템
TWI796593B (zh) * 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
US20250308968A1 (en) * 2024-03-26 2025-10-02 Applied Materials, Inc. Arc reduction using unreferenced floating power supplies

Citations (1)

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US20020050246A1 (en) * 2000-06-09 2002-05-02 Applied Materials, Inc. Full area temperature controlled electrostatic chuck and method of fabricating same

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US4757422A (en) * 1986-09-15 1988-07-12 Voyager Technologies, Inc. Dynamically balanced ionization blower
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US5835335A (en) * 1997-03-26 1998-11-10 Lam Research Corporation Unbalanced bipolar electrostatic chuck power supplies and methods thereof
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6228278B1 (en) * 1998-09-30 2001-05-08 Lam Research Corporation Methods and apparatus for determining an etch endpoint in a plasma processing system
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
EP1061639A2 (en) * 1999-06-17 2000-12-20 Applied Materials, Inc. Chucking system amd method
US6416822B1 (en) * 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7558045B1 (en) * 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
WO2010019430A2 (en) * 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
JP5395491B2 (ja) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2011211168A (ja) * 2010-03-09 2011-10-20 Toshiba Corp 半導体装置の製造方法及び半導体製造装置

Patent Citations (1)

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US20020050246A1 (en) * 2000-06-09 2002-05-02 Applied Materials, Inc. Full area temperature controlled electrostatic chuck and method of fabricating same

Also Published As

Publication number Publication date
JP6133882B2 (ja) 2017-05-24
US20130114181A1 (en) 2013-05-09
KR20140097307A (ko) 2014-08-06
WO2013066542A1 (en) 2013-05-10
JP2014533436A (ja) 2014-12-11
TWI576936B (zh) 2017-04-01
TW201330152A (zh) 2013-07-16
US9076831B2 (en) 2015-07-07

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