KR102003294B1 - 서셉터, 기상 성장 장치 및 기상 성장 방법 - Google Patents

서셉터, 기상 성장 장치 및 기상 성장 방법 Download PDF

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Publication number
KR102003294B1
KR102003294B1 KR1020180055378A KR20180055378A KR102003294B1 KR 102003294 B1 KR102003294 B1 KR 102003294B1 KR 1020180055378 A KR1020180055378 A KR 1020180055378A KR 20180055378 A KR20180055378 A KR 20180055378A KR 102003294 B1 KR102003294 B1 KR 102003294B1
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KR
South Korea
Prior art keywords
susceptor
wafer
epitaxial
concave portion
silicon
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KR1020180055378A
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English (en)
Korean (ko)
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KR20180053628A (ko
Inventor
다이스케 히에다
히사시 우치노
타츠오 구스모토
Original Assignee
가부시키가이샤 사무코
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Publication of KR20180053628A publication Critical patent/KR20180053628A/ko
Application granted granted Critical
Publication of KR102003294B1 publication Critical patent/KR102003294B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2053—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020180055378A 2015-04-07 2018-05-15 서셉터, 기상 성장 장치 및 기상 성장 방법 KR102003294B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-078561 2015-04-07
JP2015078561 2015-04-07
JPJP-P-2015-219532 2015-11-09
JP2015219532A JP6485327B2 (ja) 2015-04-07 2015-11-09 サセプタ、気相成長装置および気相成長方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020160040786A Division KR20160120227A (ko) 2015-04-07 2016-04-04 서셉터, 기상 성장 장치, 기상 성장 방법 및 에피택셜 실리콘 웨이퍼

Publications (2)

Publication Number Publication Date
KR20180053628A KR20180053628A (ko) 2018-05-23
KR102003294B1 true KR102003294B1 (ko) 2019-07-24

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KR1020180055378A KR102003294B1 (ko) 2015-04-07 2018-05-15 서셉터, 기상 성장 장치 및 기상 성장 방법

Country Status (3)

Country Link
JP (1) JP6485327B2 (ja)
KR (1) KR102003294B1 (ja)
CN (1) CN106057724B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110331381A (zh) * 2019-06-11 2019-10-15 康佳集团股份有限公司 一种外延片生长炉、设备、mocvd方法及外延片
JP7192707B2 (ja) * 2019-08-09 2022-12-20 三菱電機株式会社 半導体製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311290A (ja) * 2004-03-23 2005-11-04 Toshiba Ceramics Co Ltd サセプタ
JP2010034185A (ja) * 2008-07-28 2010-02-12 Sumco Corp 気相成長装置用のサセプタ及びエピタキシャルウェーハの製造方法
JP2011077171A (ja) * 2009-09-29 2011-04-14 Mitsubishi Electric Corp 気相成長装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932123A (ja) * 1982-08-18 1984-02-21 Sony Corp 気相成長法
JPH01256117A (ja) * 1988-04-05 1989-10-12 Sumitomo Metal Ind Ltd 気相反応装置
JPH07118465B2 (ja) * 1988-06-14 1995-12-18 東芝セラミックス株式会社 縦型エピタキシャル装置用サセプター
JP3144664B2 (ja) * 1992-08-29 2001-03-12 東京エレクトロン株式会社 処理装置及び処理方法
JPH08279470A (ja) * 1995-04-04 1996-10-22 Komatsu Electron Metals Co Ltd エピタキシャルウェーハの製造方法
JP2006190703A (ja) * 2004-12-28 2006-07-20 Shin Etsu Handotai Co Ltd エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP5040333B2 (ja) * 2007-01-30 2012-10-03 信越半導体株式会社 気相成長用サセプタ及び気相成長装置並びに気相成長方法
JP5444607B2 (ja) * 2007-10-31 2014-03-19 株式会社Ｓｕｍｃｏ エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法
KR101489483B1 (ko) * 2007-12-27 2015-02-05 주식회사 케이씨텍 원자층 증착 장치
JP2011187887A (ja) * 2010-03-11 2011-09-22 Toyota Motor Corp エピタキシャルウエハの製造方法
KR101232908B1 (ko) * 2010-04-20 2013-02-13 엘아이지에이디피 주식회사 화학기상증착장치
KR20130043443A (ko) * 2011-10-20 2013-04-30 삼성전자주식회사 서셉터 및 이를 구비하는 화학 기상 증착 장치
JP2013136475A (ja) * 2011-12-28 2013-07-11 Jx Nippon Mining & Metals Corp 気相成長装置
JP2014207357A (ja) * 2013-04-15 2014-10-30 日本パイオニクス株式会社 サセプタ及びそれを用いた気相成長装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311290A (ja) * 2004-03-23 2005-11-04 Toshiba Ceramics Co Ltd サセプタ
JP2010034185A (ja) * 2008-07-28 2010-02-12 Sumco Corp 気相成長装置用のサセプタ及びエピタキシャルウェーハの製造方法
JP2011077171A (ja) * 2009-09-29 2011-04-14 Mitsubishi Electric Corp 気相成長装置

Also Published As

Publication number Publication date
JP6485327B2 (ja) 2019-03-20
KR20180053628A (ko) 2018-05-23
CN106057724A (zh) 2016-10-26
CN106057724B (zh) 2019-09-27
JP2016201528A (ja) 2016-12-01

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