KR101993041B1 - 플라즈마 처리 장치 - Google Patents
플라즈마 처리 장치 Download PDFInfo
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- KR101993041B1 KR101993041B1 KR1020170077688A KR20170077688A KR101993041B1 KR 101993041 B1 KR101993041 B1 KR 101993041B1 KR 1020170077688 A KR1020170077688 A KR 1020170077688A KR 20170077688 A KR20170077688 A KR 20170077688A KR 101993041 B1 KR101993041 B1 KR 101993041B1
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- 238000012545 processing Methods 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 45
- 230000002093 peripheral effect Effects 0.000 claims abstract description 26
- 230000008859 change Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 43
- 239000003990 capacitor Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 11
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2016-122711 | 2016-06-21 | ||
| JP2016122711A JP6769127B2 (ja) | 2016-06-21 | 2016-06-21 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170143447A KR20170143447A (ko) | 2017-12-29 |
| KR101993041B1 true KR101993041B1 (ko) | 2019-06-25 |
Family
ID=60748783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170077688A KR101993041B1 (ko) | 2016-06-21 | 2017-06-20 | 플라즈마 처리 장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6769127B2 (zh) |
| KR (1) | KR101993041B1 (zh) |
| CN (1) | CN107527784B (zh) |
| TW (1) | TWI724183B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7085963B2 (ja) * | 2018-10-29 | 2022-06-17 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR102512209B1 (ko) * | 2018-11-16 | 2023-03-21 | 주식회사 원익아이피에스 | 기판처리장치 |
| CN110379701A (zh) * | 2019-07-24 | 2019-10-25 | 沈阳拓荆科技有限公司 | 具有可调射频组件的晶圆支撑座 |
| CN112530776B (zh) * | 2019-09-18 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003059840A (ja) | 2001-08-14 | 2003-02-28 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0637051A (ja) * | 1992-07-15 | 1994-02-10 | Tokyo Electron Ltd | プラズマ装置 |
| JPH0661185A (ja) * | 1992-08-06 | 1994-03-04 | Tokyo Electron Ltd | プラズマ処理装置 |
| CN100543944C (zh) * | 2004-04-30 | 2009-09-23 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
| JP4553247B2 (ja) * | 2004-04-30 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4876641B2 (ja) * | 2006-03-09 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5231038B2 (ja) * | 2008-02-18 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体 |
| JP5278148B2 (ja) * | 2008-11-05 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR20120006380A (ko) * | 2010-07-12 | 2012-01-18 | 다이나믹솔라디자인 주식회사 | 다중 분할 전극을 갖는 플라즈마 챔버 |
| KR101200726B1 (ko) * | 2010-09-20 | 2012-11-13 | 주식회사 뉴파워 프라즈마 | 상하 다중 분할 전극이 구비된 플라즈마 반응기 |
-
2016
- 2016-06-21 JP JP2016122711A patent/JP6769127B2/ja active Active
-
2017
- 2017-06-14 TW TW106119836A patent/TWI724183B/zh active
- 2017-06-20 KR KR1020170077688A patent/KR101993041B1/ko active IP Right Grant
- 2017-06-21 CN CN201710474908.XA patent/CN107527784B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003059840A (ja) | 2001-08-14 | 2003-02-28 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI724183B (zh) | 2021-04-11 |
| CN107527784B (zh) | 2019-08-27 |
| TW201812885A (zh) | 2018-04-01 |
| CN107527784A (zh) | 2017-12-29 |
| JP2017228395A (ja) | 2017-12-28 |
| JP6769127B2 (ja) | 2020-10-14 |
| KR20170143447A (ko) | 2017-12-29 |
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| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |