KR101992132B1 - 텅스텐의 화학 기계적 폴리싱 방법 - Google Patents

텅스텐의 화학 기계적 폴리싱 방법 Download PDF

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Publication number
KR101992132B1
KR101992132B1 KR1020120089111A KR20120089111A KR101992132B1 KR 101992132 B1 KR101992132 B1 KR 101992132B1 KR 1020120089111 A KR1020120089111 A KR 1020120089111A KR 20120089111 A KR20120089111 A KR 20120089111A KR 101992132 B1 KR101992132 B1 KR 101992132B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
substrate
tungsten
kpa
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KR1020120089111A
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English (en)
Korean (ko)
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KR20130020587A (ko
Inventor
이 구오
제리 이
레이몬드 엘. 쥬니어 라부아
광윤 장
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20130020587A publication Critical patent/KR20130020587A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020120089111A 2011-08-15 2012-08-14 텅스텐의 화학 기계적 폴리싱 방법 Active KR101992132B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,749 2011-08-15
US13/209,749 US8865013B2 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing tungsten

Publications (2)

Publication Number Publication Date
KR20130020587A KR20130020587A (ko) 2013-02-27
KR101992132B1 true KR101992132B1 (ko) 2019-09-30

Family

ID=47625347

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120089111A Active KR101992132B1 (ko) 2011-08-15 2012-08-14 텅스텐의 화학 기계적 폴리싱 방법

Country Status (7)

Country Link
US (1) US8865013B2 (https=)
JP (1) JP6137793B2 (https=)
KR (1) KR101992132B1 (https=)
CN (1) CN103042464B (https=)
DE (1) DE102012015825A1 (https=)
FR (1) FR2979069B1 (https=)
TW (1) TWI550044B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
US9303188B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9275899B2 (en) * 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
CN107075310B (zh) 2014-10-21 2019-04-02 嘉柏微电子材料股份公司 钴凹陷控制剂
JP6538368B2 (ja) * 2015-02-24 2019-07-03 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US9803108B1 (en) * 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法

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JPH10163142A (ja) * 1996-12-02 1998-06-19 Fujimi Inkooporeetetsudo:Kk タングステンの研磨用組成物
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3805588B2 (ja) 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6569770B2 (en) 2001-06-28 2003-05-27 Chartered Semiconductor Manufacturing Ltd. Method for improving oxide erosion of tungsten CMP operations
FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
JP2006504270A (ja) 2002-10-22 2006-02-02 サイロクエスト インコーポレーテッド 銅表面の化学的機械研磨用の腐食抑止研磨スラリー
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
KR101332302B1 (ko) * 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8506831B2 (en) 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate

Also Published As

Publication number Publication date
TW201313851A (zh) 2013-04-01
CN103042464A (zh) 2013-04-17
KR20130020587A (ko) 2013-02-27
CN103042464B (zh) 2015-07-01
DE102012015825A1 (de) 2013-02-21
TWI550044B (zh) 2016-09-21
FR2979069A1 (fr) 2013-02-22
FR2979069B1 (fr) 2014-09-19
JP2013042131A (ja) 2013-02-28
US8865013B2 (en) 2014-10-21
JP6137793B2 (ja) 2017-05-31
US20130045598A1 (en) 2013-02-21

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