DE102012015825A1 - Verfahren zum chemisch-mechanischen Polieren von Wolfram - Google Patents

Verfahren zum chemisch-mechanischen Polieren von Wolfram Download PDF

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Publication number
DE102012015825A1
DE102012015825A1 DE102012015825A DE102012015825A DE102012015825A1 DE 102012015825 A1 DE102012015825 A1 DE 102012015825A1 DE 102012015825 A DE102012015825 A DE 102012015825A DE 102012015825 A DE102012015825 A DE 102012015825A DE 102012015825 A1 DE102012015825 A1 DE 102012015825A1
Authority
DE
Germany
Prior art keywords
mechanical polishing
chemical mechanical
substrate
tungsten
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102012015825A
Other languages
German (de)
English (en)
Inventor
Yi Guo
Jerry Lee
Raymond L. Lavoie Jr.
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102012015825A1 publication Critical patent/DE102012015825A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102012015825A 2011-08-15 2012-08-09 Verfahren zum chemisch-mechanischen Polieren von Wolfram Withdrawn DE102012015825A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/209,749 2011-08-15
US13/209,749 US8865013B2 (en) 2011-08-15 2011-08-15 Method for chemical mechanical polishing tungsten

Publications (1)

Publication Number Publication Date
DE102012015825A1 true DE102012015825A1 (de) 2013-02-21

Family

ID=47625347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012015825A Withdrawn DE102012015825A1 (de) 2011-08-15 2012-08-09 Verfahren zum chemisch-mechanischen Polieren von Wolfram

Country Status (7)

Country Link
US (1) US8865013B2 (https=)
JP (1) JP6137793B2 (https=)
KR (1) KR101992132B1 (https=)
CN (1) CN103042464B (https=)
DE (1) DE102012015825A1 (https=)
FR (1) FR2979069B1 (https=)
TW (1) TWI550044B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
US9303188B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9275899B2 (en) * 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
CN107075310B (zh) 2014-10-21 2019-04-02 嘉柏微电子材料股份公司 钴凹陷控制剂
JP6538368B2 (ja) * 2015-02-24 2019-07-03 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US9803108B1 (en) * 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136711A (en) 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163142A (ja) * 1996-12-02 1998-06-19 Fujimi Inkooporeetetsudo:Kk タングステンの研磨用組成物
JP3805588B2 (ja) 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6569770B2 (en) 2001-06-28 2003-05-27 Chartered Semiconductor Manufacturing Ltd. Method for improving oxide erosion of tungsten CMP operations
FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
JP2006504270A (ja) 2002-10-22 2006-02-02 サイロクエスト インコーポレーテッド 銅表面の化学的機械研磨用の腐食抑止研磨スラリー
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
KR101332302B1 (ko) * 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8506831B2 (en) 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136711A (en) 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Also Published As

Publication number Publication date
KR101992132B1 (ko) 2019-09-30
TW201313851A (zh) 2013-04-01
CN103042464A (zh) 2013-04-17
KR20130020587A (ko) 2013-02-27
CN103042464B (zh) 2015-07-01
TWI550044B (zh) 2016-09-21
FR2979069A1 (fr) 2013-02-22
FR2979069B1 (fr) 2014-09-19
JP2013042131A (ja) 2013-02-28
US8865013B2 (en) 2014-10-21
JP6137793B2 (ja) 2017-05-31
US20130045598A1 (en) 2013-02-21

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R005 Application deemed withdrawn due to failure to request examination