KR101971303B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR101971303B1
KR101971303B1 KR1020140106954A KR20140106954A KR101971303B1 KR 101971303 B1 KR101971303 B1 KR 101971303B1 KR 1020140106954 A KR1020140106954 A KR 1020140106954A KR 20140106954 A KR20140106954 A KR 20140106954A KR 101971303 B1 KR101971303 B1 KR 101971303B1
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substrate
water
solvent
volatile solvent
supplied
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KR20150037507A (ko
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준 마츠시타
유지 나가시마
고노스케 하야시
구니히로 미야자키
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020140106954A 2013-09-30 2014-08-18 기판 처리 장치 및 기판 처리 방법 Active KR101971303B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013205172 2013-09-30
JPJP-P-2013-205172 2013-09-30
JP2014141828A JP6426927B2 (ja) 2013-09-30 2014-07-09 基板処理装置及び基板処理方法
JPJP-P-2014-141828 2014-07-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170026397A Division KR20170028914A (ko) 2013-09-30 2017-02-28 기판 처리 장치 및 기판 처리 방법

Publications (2)

Publication Number Publication Date
KR20150037507A KR20150037507A (ko) 2015-04-08
KR101971303B1 true KR101971303B1 (ko) 2019-04-22

Family

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Family Applications (2)

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KR1020140106954A Active KR101971303B1 (ko) 2013-09-30 2014-08-18 기판 처리 장치 및 기판 처리 방법
KR1020170026397A Withdrawn KR20170028914A (ko) 2013-09-30 2017-02-28 기판 처리 장치 및 기판 처리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020170026397A Withdrawn KR20170028914A (ko) 2013-09-30 2017-02-28 기판 처리 장치 및 기판 처리 방법

Country Status (6)

Country Link
US (2) US20150090297A1 (https=)
EP (1) EP2854164B1 (https=)
JP (1) JP6426927B2 (https=)
KR (2) KR101971303B1 (https=)
CN (1) CN104517809B (https=)
TW (1) TWI649822B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6563762B2 (ja) * 2015-09-29 2019-08-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN106041331B (zh) * 2016-06-21 2018-10-02 昆山国显光电有限公司 一种oled基板冷却系统
US10971354B2 (en) 2016-07-15 2021-04-06 Applied Materials, Inc. Drying high aspect ratio features
JP6798185B2 (ja) * 2016-08-08 2020-12-09 東京エレクトロン株式会社 液処理方法、基板処理装置及び記憶媒体
JP6693846B2 (ja) * 2016-09-28 2020-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US10546762B2 (en) * 2016-11-18 2020-01-28 Applied Materials, Inc. Drying high aspect ratio features
CN107611010A (zh) * 2017-08-31 2018-01-19 长江存储科技有限责任公司 一种晶圆清洗方法
JP7227757B2 (ja) * 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11710647B2 (en) * 2021-01-28 2023-07-25 Applied Materials, Inc. Hyperbaric clean method and apparatus for cleaning semiconductor chamber components
CN114975159A (zh) * 2021-02-22 2022-08-30 顶程国际股份有限公司 湿式处理设备与湿式处理方法
JP7726653B2 (ja) * 2021-03-31 2025-08-20 芝浦メカトロニクス株式会社 基板乾燥装置及び基板処理装置
JP7745359B2 (ja) * 2021-04-16 2025-09-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および乾燥処理液
JP7650719B2 (ja) * 2021-05-17 2025-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102721924B1 (ko) * 2021-07-12 2024-10-24 시바우라 메카트로닉스 가부시끼가이샤 유기막 형성 장치 및 유기막의 제조 방법
JP2023019610A (ja) * 2021-07-29 2023-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7739157B2 (ja) * 2021-11-30 2025-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (4)

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US20010047595A1 (en) * 1999-05-27 2001-12-06 Yassin Mehmandoust Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US20080035182A1 (en) * 2004-09-22 2008-02-14 S.E.S. Co. Ltd. Substrate Treatment Apparatus
US20110143541A1 (en) * 2009-12-11 2011-06-16 Yoshihiro Ogawa Apparatus and method of treating surface of semiconductor substrate
US20110314689A1 (en) * 2010-06-23 2011-12-29 Hisashi Okuchi Substrate drying method

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TW386235B (en) * 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
JPH10195080A (ja) * 1997-01-10 1998-07-28 Toshiba Corp 共沸組成物、これを用いた水切り蒸気乾燥剤、水切り蒸気乾燥方法および水切り蒸気乾燥装置
GB2346953A (en) * 1999-02-16 2000-08-23 Stephen Rodger Henly Removing water from articles
KR100634374B1 (ko) * 2004-06-23 2006-10-16 삼성전자주식회사 기판을 건조하는 장치 및 방법
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2007038209A (ja) * 2005-06-27 2007-02-15 Shimada Phys & Chem Ind Co Ltd 基板洗浄装置および基板洗浄方法
JP2008034779A (ja) 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
ATE471366T1 (de) * 2006-09-14 2010-07-15 Fujifilm Corp Mittel zur entfernung von wasser aus einem substrat, verfahren zur wasserentfernung und trocknungsverfahren damit
US8021490B2 (en) * 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
JP4879126B2 (ja) * 2007-09-12 2012-02-22 大日本スクリーン製造株式会社 基板処理装置
JP4994990B2 (ja) * 2007-08-03 2012-08-08 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラム、記録媒体および置換剤
KR101596750B1 (ko) * 2010-06-23 2016-02-23 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 이 기판 처리 방법을 실행하기 위한 컴퓨터 프로그램이 기록된 기록 매체 및 기판 처리 장치
KR101256290B1 (ko) * 2011-05-20 2013-04-18 주식회사 케이씨텍 기판 건조 장치

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US20010047595A1 (en) * 1999-05-27 2001-12-06 Yassin Mehmandoust Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US20080035182A1 (en) * 2004-09-22 2008-02-14 S.E.S. Co. Ltd. Substrate Treatment Apparatus
US20110143541A1 (en) * 2009-12-11 2011-06-16 Yoshihiro Ogawa Apparatus and method of treating surface of semiconductor substrate
US20110314689A1 (en) * 2010-06-23 2011-12-29 Hisashi Okuchi Substrate drying method

Also Published As

Publication number Publication date
JP2015092538A (ja) 2015-05-14
JP6426927B2 (ja) 2018-11-21
CN104517809A (zh) 2015-04-15
CN104517809B (zh) 2018-07-31
EP2854164B1 (en) 2019-02-13
US20150090297A1 (en) 2015-04-02
US10406566B2 (en) 2019-09-10
EP2854164A1 (en) 2015-04-01
US20170259308A1 (en) 2017-09-14
KR20150037507A (ko) 2015-04-08
TWI649822B (zh) 2019-02-01
TW201526141A (zh) 2015-07-01
KR20170028914A (ko) 2017-03-14

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