CN104517809B - 基板处理装置和基板处理方法 - Google Patents

基板处理装置和基板处理方法 Download PDF

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Publication number
CN104517809B
CN104517809B CN201410513859.2A CN201410513859A CN104517809B CN 104517809 B CN104517809 B CN 104517809B CN 201410513859 A CN201410513859 A CN 201410513859A CN 104517809 B CN104517809 B CN 104517809B
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China
Prior art keywords
substrate
solvent
volatile solvent
unit
wash water
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English (en)
Chinese (zh)
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CN104517809A (zh
Inventor
松下淳
长嶋裕次
林航之介
宫崎邦浩
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Shibaura Mechatronics Corp
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Shibaura Engineering Works Co Ltd
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Publication of CN104517809A publication Critical patent/CN104517809A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201410513859.2A 2013-09-30 2014-09-29 基板处理装置和基板处理方法 Active CN104517809B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-205172 2013-09-30
JP2013205172 2013-09-30
JP2014141828A JP6426927B2 (ja) 2013-09-30 2014-07-09 基板処理装置及び基板処理方法
JP2014-141828 2014-07-09

Publications (2)

Publication Number Publication Date
CN104517809A CN104517809A (zh) 2015-04-15
CN104517809B true CN104517809B (zh) 2018-07-31

Family

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Family Applications (1)

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CN201410513859.2A Active CN104517809B (zh) 2013-09-30 2014-09-29 基板处理装置和基板处理方法

Country Status (6)

Country Link
US (2) US20150090297A1 (https=)
EP (1) EP2854164B1 (https=)
JP (1) JP6426927B2 (https=)
KR (2) KR101971303B1 (https=)
CN (1) CN104517809B (https=)
TW (1) TWI649822B (https=)

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JP6563762B2 (ja) * 2015-09-29 2019-08-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN106041331B (zh) * 2016-06-21 2018-10-02 昆山国显光电有限公司 一种oled基板冷却系统
US10971354B2 (en) 2016-07-15 2021-04-06 Applied Materials, Inc. Drying high aspect ratio features
JP6798185B2 (ja) * 2016-08-08 2020-12-09 東京エレクトロン株式会社 液処理方法、基板処理装置及び記憶媒体
JP6693846B2 (ja) * 2016-09-28 2020-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US10546762B2 (en) * 2016-11-18 2020-01-28 Applied Materials, Inc. Drying high aspect ratio features
CN107611010A (zh) * 2017-08-31 2018-01-19 长江存储科技有限责任公司 一种晶圆清洗方法
JP7227757B2 (ja) * 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11710647B2 (en) * 2021-01-28 2023-07-25 Applied Materials, Inc. Hyperbaric clean method and apparatus for cleaning semiconductor chamber components
CN114975159A (zh) * 2021-02-22 2022-08-30 顶程国际股份有限公司 湿式处理设备与湿式处理方法
JP7726653B2 (ja) * 2021-03-31 2025-08-20 芝浦メカトロニクス株式会社 基板乾燥装置及び基板処理装置
JP7745359B2 (ja) * 2021-04-16 2025-09-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および乾燥処理液
JP7650719B2 (ja) * 2021-05-17 2025-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102721924B1 (ko) * 2021-07-12 2024-10-24 시바우라 메카트로닉스 가부시끼가이샤 유기막 형성 장치 및 유기막의 제조 방법
JP2023019610A (ja) * 2021-07-29 2023-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7739157B2 (ja) * 2021-11-30 2025-09-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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Also Published As

Publication number Publication date
JP2015092538A (ja) 2015-05-14
JP6426927B2 (ja) 2018-11-21
CN104517809A (zh) 2015-04-15
EP2854164B1 (en) 2019-02-13
US20150090297A1 (en) 2015-04-02
US10406566B2 (en) 2019-09-10
EP2854164A1 (en) 2015-04-01
US20170259308A1 (en) 2017-09-14
KR20150037507A (ko) 2015-04-08
KR101971303B1 (ko) 2019-04-22
TWI649822B (zh) 2019-02-01
TW201526141A (zh) 2015-07-01
KR20170028914A (ko) 2017-03-14

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