KR101944477B1 - 반도체 소자 패키지 및 그 제조방법 - Google Patents

반도체 소자 패키지 및 그 제조방법 Download PDF

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KR101944477B1
KR101944477B1 KR1020110131042A KR20110131042A KR101944477B1 KR 101944477 B1 KR101944477 B1 KR 101944477B1 KR 1020110131042 A KR1020110131042 A KR 1020110131042A KR 20110131042 A KR20110131042 A KR 20110131042A KR 101944477 B1 KR101944477 B1 KR 101944477B1
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semiconductor device
passivation layer
device package
semiconductor
dielectric
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Korean (ko)
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KR20120089993A (ko
Inventor
리차드 알프레드 뷰프레
폴 알란 맥코넬리
애런 비루파크샤 고우다
토마스 버트 고르지카
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제너럴 일렉트릭 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07131—Means for applying material, e.g. for deposition or forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020110131042A 2010-12-08 2011-12-08 반도체 소자 패키지 및 그 제조방법 Active KR101944477B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/962,761 US8310040B2 (en) 2010-12-08 2010-12-08 Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof
US12/962,761 2010-12-08

Publications (2)

Publication Number Publication Date
KR20120089993A KR20120089993A (ko) 2012-08-16
KR101944477B1 true KR101944477B1 (ko) 2019-01-31

Family

ID=45002829

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Application Number Title Priority Date Filing Date
KR1020110131042A Active KR101944477B1 (ko) 2010-12-08 2011-12-08 반도체 소자 패키지 및 그 제조방법

Country Status (8)

Country Link
US (2) US8310040B2 (https=)
EP (1) EP2463901B1 (https=)
JP (1) JP5926547B2 (https=)
KR (1) KR101944477B1 (https=)
CN (1) CN102543946B (https=)
PH (1) PH12011000403A1 (https=)
SG (1) SG182076A1 (https=)
TW (1) TWI544590B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US8431438B2 (en) * 2010-04-06 2013-04-30 Intel Corporation Forming in-situ micro-feature structures with coreless packages
US9209151B2 (en) 2013-09-26 2015-12-08 General Electric Company Embedded semiconductor device package and method of manufacturing thereof
US9806051B2 (en) 2014-03-04 2017-10-31 General Electric Company Ultra-thin embedded semiconductor device package and method of manufacturing thereof
WO2015174993A1 (en) * 2014-05-15 2015-11-19 Intel Corporation Molded composite enclosure for integrated circuit assembly
WO2015182581A1 (ja) * 2014-05-29 2015-12-03 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ） ソシエテ・ア・レスポンサビリテ・リミテ 空隙形成用組成物、その組成物を用いて形成された空隙を具備した半導体装置、およびその組成物を用いた半導体装置の製造方法
EP3065164A1 (en) * 2015-03-04 2016-09-07 ABB Technology AG Power semiconductor arrangement and method of generating a power semiconductor arrangement
WO2020014499A1 (en) * 2018-07-13 2020-01-16 Array Photonics, Inc. Dual-depth via device and process for large back contact solar cells
DE102020135088A1 (de) * 2020-03-27 2021-09-30 Samsung Electronics Co., Ltd. Halbleitervorrichtung
US11699663B2 (en) 2020-04-27 2023-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation scheme design for wafer singulation
CN113517205A (zh) * 2020-04-27 2021-10-19 台湾积体电路制造股份有限公司 半导体器件及其形成方法
CN115939222B (zh) * 2022-11-24 2025-10-17 湖南三安半导体有限责任公司 半导体器件及其制备方法
CN116936592A (zh) * 2023-07-24 2023-10-24 华天科技（昆山）电子有限公司 一种高可靠性的cis芯片封装结构及方法

Citations (1)

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WO2009156970A1 (en) * 2008-06-26 2009-12-30 Nxp B.V. Packaged semiconductor product and method for manufacture thereof

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US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
US4249299A (en) * 1979-03-05 1981-02-10 Hughes Aircraft Company Edge-around leads for backside connections to silicon circuit die
US5161093A (en) 1990-07-02 1992-11-03 General Electric Company Multiple lamination high density interconnect process and structure employing a variable crosslinking adhesive
DE69738783D1 (de) * 1996-10-08 2008-07-31 Hitachi Chemical Co Ltd Halbleiteranordnung, halbleiterchipträgersubstrat, herstellungsverfahren für anordnung und substrat, klebstoff und doppelseitiges haftklebeband
EP0926729A3 (en) * 1997-12-10 1999-12-08 Mitsubishi Gas Chemical Company, Inc. Semiconductor plastic package and process for the production thereof
US6239980B1 (en) 1998-08-31 2001-05-29 General Electric Company Multimodule interconnect structure and process
US6306680B1 (en) 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
JP3602000B2 (ja) * 1999-04-26 2004-12-15 沖電気工業株式会社 半導体装置および半導体モジュール
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JP4454814B2 (ja) * 2000-08-29 2010-04-21 Ｎｅｃエレクトロニクス株式会社 樹脂封止型半導体装置及びその製造方法
US7633765B1 (en) * 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
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JP5033682B2 (ja) * 2008-03-12 2012-09-26 株式会社テラミクロス 半導体素子およびその製造方法並びに半導体装置およびその製造方法
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Also Published As

Publication number Publication date
CN102543946B (zh) 2016-12-07
EP2463901B1 (en) 2018-06-13
TW201246475A (en) 2012-11-16
JP2012124486A (ja) 2012-06-28
US20120329207A1 (en) 2012-12-27
US8586421B2 (en) 2013-11-19
SG182076A1 (en) 2012-07-30
EP2463901A2 (en) 2012-06-13
US20120146234A1 (en) 2012-06-14
KR20120089993A (ko) 2012-08-16
CN102543946A (zh) 2012-07-04
US8310040B2 (en) 2012-11-13
PH12011000403A1 (en) 2014-07-23
TWI544590B (zh) 2016-08-01
JP5926547B2 (ja) 2016-05-25
EP2463901A3 (en) 2012-08-29

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