KR101930996B1 - 포토마스크 블랭크의 결함 검사 방법, 선별 방법 및 제조 방법 - Google Patents

포토마스크 블랭크의 결함 검사 방법, 선별 방법 및 제조 방법 Download PDF

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KR101930996B1
KR101930996B1 KR1020160111330A KR20160111330A KR101930996B1 KR 101930996 B1 KR101930996 B1 KR 101930996B1 KR 1020160111330 A KR1020160111330 A KR 1020160111330A KR 20160111330 A KR20160111330 A KR 20160111330A KR 101930996 B1 KR101930996 B1 KR 101930996B1
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South Korea
Prior art keywords
inspection
defect
light
distance
photomask blank
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KR1020160111330A
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Korean (ko)
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KR20170028847A (ko
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츠네오 테라사와
아츠시 요코하타
다이스케 이와이
다카히로 기시타
히로시 후쿠다
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020160111330A 2015-09-04 2016-08-31 포토마스크 블랭크의 결함 검사 방법, 선별 방법 및 제조 방법 KR101930996B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-174684 2015-09-04
JP2015174684A JP6394544B2 (ja) 2015-09-04 2015-09-04 フォトマスクブランクの欠陥検査方法、選別方法及び製造方法

Publications (2)

Publication Number Publication Date
KR20170028847A KR20170028847A (ko) 2017-03-14
KR101930996B1 true KR101930996B1 (ko) 2018-12-19

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KR1020160111330A KR101930996B1 (ko) 2015-09-04 2016-08-31 포토마스크 블랭크의 결함 검사 방법, 선별 방법 및 제조 방법

Country Status (7)

Country Link
US (1) US9829442B2 (fr)
EP (1) EP3139213B1 (fr)
JP (1) JP6394544B2 (fr)
KR (1) KR101930996B1 (fr)
CN (1) CN106502046B (fr)
SG (1) SG10201607092VA (fr)
TW (1) TWI639052B (fr)

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EP3355115B1 (fr) 2017-01-26 2022-08-31 Shin-Etsu Chemical Co., Ltd. Procédés et système d'inspection de défauts, de tri et de fabrication d'ébauches de photomasques
JP6791031B2 (ja) * 2017-06-13 2020-11-25 信越化学工業株式会社 フォトマスクブランク及びその製造方法
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
CN107632495B (zh) * 2017-08-16 2020-11-03 上海华力微电子有限公司 一种掩膜板微尘影响评估方法和系统
KR102027156B1 (ko) * 2017-10-24 2019-10-01 한국기계연구원 공초점 리소그래피 장치
US11218675B2 (en) * 2018-03-02 2022-01-04 Sony Corporation Information processing apparatus, computation method of information processing apparatus, and program
KR102352625B1 (ko) 2018-03-08 2022-01-17 주식회사 엘지에너지솔루션 외부 단락 방지 구조가 적용된 배터리 모듈을 이용한 배터리 팩
JP6675433B2 (ja) * 2018-04-25 2020-04-01 信越化学工業株式会社 欠陥分類方法、フォトマスクブランクの選別方法、およびマスクブランクの製造方法
JP7017475B2 (ja) * 2018-06-19 2022-02-08 信越化学工業株式会社 フォトマスクブランク関連基板の表面状態の評価方法
JP7154572B2 (ja) * 2018-09-12 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7320416B2 (ja) * 2018-09-28 2023-08-03 Hoya株式会社 フォトマスク基板の修正方法、フォトマスク基板の製造方法、フォトマスク基板の処理方法、フォトマスク基板、フォトマスクの製造方法、及び基板処理装置
CN112889087A (zh) * 2018-10-15 2021-06-01 3M创新有限公司 对制膜中任意形状的片材部件的自动检查
TWI771594B (zh) * 2019-06-19 2022-07-21 住華科技股份有限公司 缺陷判斷訓練方法及應用其之系統以及缺陷判斷方法及應用其之系統
US20220292665A1 (en) * 2019-10-02 2022-09-15 Konica Minolta, Inc. Workpiece surface defect detection device and detection method, workpiece surface inspection system, and program

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KR101273739B1 (ko) 2010-03-15 2013-06-12 가부시키가이샤 히다치 하이테크놀로지즈 다결정 실리콘 박막 검사 방법 및 그 장치
KR101692087B1 (ko) 2009-01-09 2017-01-02 호야 가부시키가이샤 마스크 블랭크용 글래스 기판의 제조 방법, 마스크 블랭크의 제조 방법 및 노광용 포토마스크의 제조 방법

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JP4204583B2 (ja) 2005-10-24 2009-01-07 信越化学工業株式会社 フォトマスクブランクの製造方法
KR101692087B1 (ko) 2009-01-09 2017-01-02 호야 가부시키가이샤 마스크 블랭크용 글래스 기판의 제조 방법, 마스크 블랭크의 제조 방법 및 노광용 포토마스크의 제조 방법
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Also Published As

Publication number Publication date
JP6394544B2 (ja) 2018-09-26
TWI639052B (zh) 2018-10-21
US20170068158A1 (en) 2017-03-09
EP3139213B1 (fr) 2018-05-09
EP3139213A2 (fr) 2017-03-08
JP2017049207A (ja) 2017-03-09
EP3139213A3 (fr) 2017-05-10
TW201723646A (zh) 2017-07-01
US9829442B2 (en) 2017-11-28
CN106502046A (zh) 2017-03-15
SG10201607092VA (en) 2017-04-27
KR20170028847A (ko) 2017-03-14
CN106502046B (zh) 2021-08-03

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