JP6675433B2 - 欠陥分類方法、フォトマスクブランクの選別方法、およびマスクブランクの製造方法 - Google Patents
欠陥分類方法、フォトマスクブランクの選別方法、およびマスクブランクの製造方法 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N21/894—Pinholes
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N2021/8924—Dents; Relief flaws
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
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- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
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- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Textile Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
ことを特徴とする。
本実施例で使用するフォトマスクブランクは、波長193nmのArFエキシマレーザを露光光として用いるハーフトーン位相シフトマスクを製作するためのフォトマスクブランクである。露光光に対して透明な基板として合成石英基板(大きさ約152mm×152mm×厚さ6.35mm)を準備し、その上にモリブデン(Mo)とシリコン(Si)を主成分とするハーフトーン位相シフト膜を成膜し、更にクロム(Cr)を主成分とする遮光膜を成膜した。以上のようにして全部で60枚のフォトマスクブランクを製作した。
101 透明基板
102 光学薄膜
103 ハードマスク膜
150 欠陥検査装置
151 検査光学系
152 欠陥検出部
153 画像処理部
154 特徴量算出部
155 欠陥学習部
156 欠陥分類部
157 制御装置
158 記憶装置
159 表示装置
200 第1の(2次元)検査画像
201 輪郭線
202 第2の(2次元)検査画像
203 輝度変化領域
204 第3の(2次元)検査画像
205 特徴量を算出するための演算領域
BM1 検査光
BM2 反射光
BSP ビームスプリッタ
DEF1 ピンホール欠陥
DEF2 ピンホール欠陥
DEF3 凸欠陥
ILS 光源
IMG1 欠陥に起因する輝度変化部
IMG2 ノイズに起因する輝度変化部
IMG3 ノイズに起因する輝度変化部
L1 レンズ
MB フォトマスクブランク
OBL 対物レンズ
SE 光検出器
STG ステージ
Claims (9)
- 検査対象基板の表面の認められる欠陥を分類する方法であって、
共焦点光学系を有する欠陥検査装置を用いて前記検査対象基板に対して検査光を前記基板表面上で走査(S1)し、
前記検査対象基板からの反射光を2次元的に検出(S2)し、
該反射光に対応する出力信号を2次元的に信号処理(S3)することにより、前記検査対象基板の表面上の欠陥を検出(S4)し、
さらに、前記2次元的に信号処理して得られた画像を処理して前記検出された欠陥を分類する(S5)工程を備え、
前記画像処理は、
表面欠陥が既知の基板欠陥を前記欠陥検査装置で検査したときに生成される第1の検査画像と第2の検査画像を処理して、予め定めたパラメータを特徴量とする機械学習により欠陥を分類する分類基準を構築する第1のサブステップと、
前記欠陥検査装置を用いて前記検査対象基板から得られる第1の検査画像及び第2の検査画像から特徴量を算出して、前記分類基準に沿って、前記検査対象基板の欠陥を分類する第2のサブステップを含み、
前記第1のサブステップと前記第2のサブステップにおける欠陥部の特徴量の算出は、前記第2の検査画像で欠陥が存在する概略領域を求め、該概略領域を前記第1の検査画像に適用して画像処理の領域を限定して欠陥部の特徴量を算出することにより行われる、
ことを特徴とする欠陥分類方法。 - 前記第1の検査画像は、前記検査光を基板上で走査させた際の反射光として得られる光学情報を2次元的に配置して生成される、欠陥を含む領域の2次元画像であり、前記第2の検査画像は、前記第1の検査画像に前記光学情報を遅延させて減算することにより生成される2次元画像である、請求項1に記載の欠陥分類方法。
- 前記第1の検査画像は前記欠陥検査装置が備える検出器から逐次出力される輝度信号から生成され、前記第2の検査画像は欠陥が存在する領域における近接部分からの信号の差から生成される、請求項1に記載の欠陥分類方法。
- 前記検査光が、波長210〜550nmの光である、請求項1に記載の欠陥分類方法。
- 前記欠陥検査装置が備える検出器で基板からの反射光を収集する際に、集光光学系の光路上に反射光の一部を遮蔽する空間フィルタを設け、該空間フィルタを通して反射光を収集する、請求項1に記載の欠陥分類方法。
- 前記空間フィルタは、前記検出器から逐次出力される欠陥存在領域の信号を非対称な輝度プロファイルとする、請求項5に記載の欠陥分類方法。
- 前記検査対象基板は、10nm以下の厚さの薄膜を少なくとも1層含むフォトマスクブランクであり、前記分類される欠陥は、前記薄膜の凹状欠陥またはピンホール欠陥である、請求項1乃至6のいずれか1項に記載の欠陥分類方法。
- 請求項1乃至7のいずれか1項に記載の欠陥分類方法により、凹状欠陥を含まないフォトマスクブランクを選別する、フォトマスクブランクの選別方法。
- 基板上に少なくとも1層の薄膜と該薄膜の加工補助層であるハードマスク膜を形成する工程と、
請求項1乃至7のいずれか1項に記載の欠陥分類方法により、前記薄膜もしくは前記ハードマスク膜に存在する欠陥の凹凸性を評価する工程と、を含むフォトマスクブランクの製造方法。
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JP2018083583A JP6675433B2 (ja) | 2018-04-25 | 2018-04-25 | 欠陥分類方法、フォトマスクブランクの選別方法、およびマスクブランクの製造方法 |
KR1020190045956A KR102139005B1 (ko) | 2018-04-25 | 2019-04-19 | 결함 분류 방법, 포토마스크 블랭크의 선별 방법 및 포토마스크 블랭크의 제조 방법 |
US16/391,725 US10488347B2 (en) | 2018-04-25 | 2019-04-23 | Defect classification method, method of sorting photomask blanks, and method of manufacturing mask blank |
TW108114233A TWI713088B (zh) | 2018-04-25 | 2019-04-24 | 缺陷分類方法、空白光罩之篩選方法以及空白光罩之製造方法 |
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JP7214432B2 (ja) * | 2018-10-22 | 2023-01-30 | キヤノン株式会社 | 画像処理方法、画像処理プログラム、記録媒体、画像処理装置、生産システム、物品の製造方法 |
US11506683B2 (en) | 2018-11-07 | 2022-11-22 | Trustees Of Tufts College | Atomic-force microscopy for identification of surfaces |
US10753882B1 (en) * | 2019-04-10 | 2020-08-25 | Griffyn Robotech Private Ltd. | Inspection and cosmetic grading through image processing system and method |
US11216687B2 (en) * | 2019-05-15 | 2022-01-04 | Getac Technology Corporation | Image detection scanning method for object surface defects and image detection scanning system thereof |
US11211271B2 (en) * | 2019-08-23 | 2021-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for semiconductor structure sample preparation and analysis |
TWI739376B (zh) * | 2019-12-13 | 2021-09-11 | 南臺學校財團法人南臺科技大學 | 光罩之保護膜的檢測方法及檢測系統 |
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