KR101930111B1 - 환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 - Google Patents
환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 Download PDFInfo
- Publication number
- KR101930111B1 KR101930111B1 KR1020137030987A KR20137030987A KR101930111B1 KR 101930111 B1 KR101930111 B1 KR 101930111B1 KR 1020137030987 A KR1020137030987 A KR 1020137030987A KR 20137030987 A KR20137030987 A KR 20137030987A KR 101930111 B1 KR101930111 B1 KR 101930111B1
- Authority
- KR
- South Korea
- Prior art keywords
- spectrum
- spectra
- polishing
- substrate
- transmission curves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/091,965 US8547538B2 (en) | 2011-04-21 | 2011-04-21 | Construction of reference spectra with variations in environmental effects |
| US13/091,965 | 2011-04-21 | ||
| PCT/US2012/034109 WO2012145418A2 (en) | 2011-04-21 | 2012-04-18 | Construction of reference spectra with variations in environmental effects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140025487A KR20140025487A (ko) | 2014-03-04 |
| KR101930111B1 true KR101930111B1 (ko) | 2018-12-17 |
Family
ID=47021106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137030987A Active KR101930111B1 (ko) | 2011-04-21 | 2012-04-18 | 환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8547538B2 (enExample) |
| JP (1) | JP6017538B2 (enExample) |
| KR (1) | KR101930111B1 (enExample) |
| TW (1) | TWI465314B (enExample) |
| WO (1) | WO2012145418A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
| TWI825537B (zh) * | 2011-08-01 | 2023-12-11 | 以色列商諾威股份有限公司 | 光學測量系統 |
| US20150055132A1 (en) * | 2012-04-05 | 2015-02-26 | Renishaw Diagnostics Limited | Method for calibrating spectroscopy apparatus and equipment for use in the method |
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| US9056383B2 (en) | 2013-02-26 | 2015-06-16 | Applied Materials, Inc. | Path for probe of spectrographic metrology system |
| US20140242881A1 (en) * | 2013-02-27 | 2014-08-28 | Applied Materials, Inc. | Feed forward parameter values for use in theoretically generating spectra |
| TWI487888B (zh) * | 2013-09-30 | 2015-06-11 | Ind Tech Res Inst | 掃描式光柵光譜儀 |
| KR102497215B1 (ko) | 2016-05-16 | 2023-02-07 | 삼성전자 주식회사 | 계측 설비의 스펙트럼 보정방법, 및 그 스펙트럼 보정방법을 기반으로 하는 소자의 계측방법과 제조방법 |
| US10562148B2 (en) * | 2016-10-10 | 2020-02-18 | Applied Materials, Inc. | Real time profile control for chemical mechanical polishing |
| KR102580487B1 (ko) * | 2018-06-18 | 2023-09-21 | 주식회사 케이씨텍 | 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법 |
| US11507824B2 (en) | 2018-06-28 | 2022-11-22 | Applied Materials, Inc. | Training spectrum generation for machine learning system for spectrographic monitoring |
| US10886155B2 (en) * | 2019-01-16 | 2021-01-05 | Applied Materials, Inc. | Optical stack deposition and on-board metrology |
| KR20220100046A (ko) * | 2019-11-21 | 2022-07-14 | 램 리써치 코포레이션 | 제조 챔버들 내에서 이상 (anomalous) 플라즈마 이벤트들의 검출 및 위치 확인 (location) |
| JP7469032B2 (ja) * | 2019-12-10 | 2024-04-16 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| US11544838B2 (en) * | 2020-03-21 | 2023-01-03 | Kla Corporation | Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging |
| JP7503740B2 (ja) * | 2020-09-15 | 2024-06-21 | 国立大学法人長岡技術科学大学 | 研磨状態解析予測プログラム、記憶装置、カソードルミネセンス装置、および研磨状態解析予測方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000057127A1 (en) * | 1999-03-22 | 2000-09-28 | Sensys Instruments Corporation | Method and apparatus for wafer metrology |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01206236A (ja) * | 1988-02-15 | 1989-08-18 | Hitachi Ltd | 石英材質判別装置 |
| US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6334807B1 (en) * | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
| US6707540B1 (en) | 1999-12-23 | 2004-03-16 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current and optical measurements |
| TW534854B (en) * | 2000-08-31 | 2003-06-01 | Motorola Inc | Method and apparatus for measuring a polishing condition |
| JP3804064B2 (ja) * | 2001-12-04 | 2006-08-02 | 株式会社東京精密 | ウェーハ研磨装置の研磨終点検出方法及び装置 |
| TW590850B (en) * | 2001-12-28 | 2004-06-11 | Macronix Int Co Ltd | Method of determining the endpoint of a chemical mechanical polishing process |
| JP2004055995A (ja) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | Cmp装置、cmp研磨方法、半導体装置及びその製造方法 |
| JP4542324B2 (ja) | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
| TWI235234B (en) * | 2003-07-11 | 2005-07-01 | Air Liquide | Method and apparatus for monitoring of slurry consistency |
| KR100644390B1 (ko) | 2005-07-20 | 2006-11-10 | 삼성전자주식회사 | 박막 두께 측정방법 및 이를 수행하기 위한 장치 |
| US8392012B2 (en) | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| US7409260B2 (en) | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
| JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
| WO2007069242A1 (en) * | 2005-12-12 | 2007-06-21 | Platform Development & Investment Ltd. | Assessment of diamond color |
| US7494929B2 (en) | 2006-04-27 | 2009-02-24 | Applied Materials, Inc. | Automatic gain control |
| KR101381341B1 (ko) * | 2006-10-06 | 2014-04-04 | 가부시끼가이샤 도시바 | 가공 종점 검지방법, 연마방법 및 연마장치 |
| KR101678082B1 (ko) * | 2007-02-23 | 2016-11-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
| JP2009088486A (ja) * | 2007-08-29 | 2009-04-23 | Applied Materials Inc | 高スループット低形状銅cmp処理 |
| JP5367246B2 (ja) * | 2007-09-28 | 2013-12-11 | Sumco Techxiv株式会社 | 半導体ウェーハの研磨装置及び研磨方法 |
| US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
| JP2010014642A (ja) * | 2008-07-07 | 2010-01-21 | Sony Corp | 光強度測定方法及び光強度測定装置 |
| WO2010062497A2 (en) * | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US20100114532A1 (en) | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
| US8579675B2 (en) * | 2008-11-26 | 2013-11-12 | Applied Materials, Inc. | Methods of using optical metrology for feed back and feed forward process control |
-
2011
- 2011-04-21 US US13/091,965 patent/US8547538B2/en not_active Expired - Fee Related
-
2012
- 2012-04-18 KR KR1020137030987A patent/KR101930111B1/ko active Active
- 2012-04-18 WO PCT/US2012/034109 patent/WO2012145418A2/en not_active Ceased
- 2012-04-18 JP JP2014506519A patent/JP6017538B2/ja active Active
- 2012-04-19 TW TW101113988A patent/TWI465314B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000057127A1 (en) * | 1999-03-22 | 2000-09-28 | Sensys Instruments Corporation | Method and apparatus for wafer metrology |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6017538B2 (ja) | 2016-11-02 |
| JP2014512693A (ja) | 2014-05-22 |
| US8547538B2 (en) | 2013-10-01 |
| KR20140025487A (ko) | 2014-03-04 |
| US20120268738A1 (en) | 2012-10-25 |
| WO2012145418A3 (en) | 2013-01-24 |
| WO2012145418A2 (en) | 2012-10-26 |
| TWI465314B (zh) | 2014-12-21 |
| TW201249599A (en) | 2012-12-16 |
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