KR101930111B1 - 환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 - Google Patents

환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 Download PDF

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KR101930111B1
KR101930111B1 KR1020137030987A KR20137030987A KR101930111B1 KR 101930111 B1 KR101930111 B1 KR 101930111B1 KR 1020137030987 A KR1020137030987 A KR 1020137030987A KR 20137030987 A KR20137030987 A KR 20137030987A KR 101930111 B1 KR101930111 B1 KR 101930111B1
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South Korea
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spectrum
spectra
polishing
substrate
transmission curves
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Korean (ko)
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KR20140025487A (ko
Inventor
제프리 드루 데이비드
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어플라이드 머티어리얼스, 인코포레이티드
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N2021/8411Application to online plant, process monitoring
    • G01N2021/8416Application to online plant, process monitoring and process controlling, not otherwise provided for
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438Mutilayers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59Transmissivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Spectrometry And Color Measurement (AREA)
KR1020137030987A 2011-04-21 2012-04-18 환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성 Active KR101930111B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/091,965 2011-04-21
US13/091,965 US8547538B2 (en) 2011-04-21 2011-04-21 Construction of reference spectra with variations in environmental effects
PCT/US2012/034109 WO2012145418A2 (en) 2011-04-21 2012-04-18 Construction of reference spectra with variations in environmental effects

Publications (2)

Publication Number Publication Date
KR20140025487A KR20140025487A (ko) 2014-03-04
KR101930111B1 true KR101930111B1 (ko) 2018-12-17

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KR1020137030987A Active KR101930111B1 (ko) 2011-04-21 2012-04-18 환경적 영향으로 변동들을 갖는 기준 스펙트럼들의 구성

Country Status (5)

Country Link
US (1) US8547538B2 (enExample)
JP (1) JP6017538B2 (enExample)
KR (1) KR101930111B1 (enExample)
TW (1) TWI465314B (enExample)
WO (1) WO2012145418A2 (enExample)

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WO2013150290A1 (en) * 2012-04-05 2013-10-10 Renishaw Diagnostics Limited A method for calibrating spectroscopy apparatus and equipment for use in the method
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
US9056383B2 (en) 2013-02-26 2015-06-16 Applied Materials, Inc. Path for probe of spectrographic metrology system
US20140242881A1 (en) * 2013-02-27 2014-08-28 Applied Materials, Inc. Feed forward parameter values for use in theoretically generating spectra
TWI487888B (zh) * 2013-09-30 2015-06-11 Ind Tech Res Inst 掃描式光柵光譜儀
KR102497215B1 (ko) 2016-05-16 2023-02-07 삼성전자 주식회사 계측 설비의 스펙트럼 보정방법, 및 그 스펙트럼 보정방법을 기반으로 하는 소자의 계측방법과 제조방법
TWI733915B (zh) * 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法,及其研磨系統和電腦程式產品
KR102580487B1 (ko) * 2018-06-18 2023-09-21 주식회사 케이씨텍 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법
JP7532262B2 (ja) 2018-06-28 2024-08-13 アプライド マテリアルズ インコーポレイテッド 分光画像モニタリングのための機械学習システム向けのトレーニングスペクトルの生成
US10886155B2 (en) * 2019-01-16 2021-01-05 Applied Materials, Inc. Optical stack deposition and on-board metrology
KR20220100046A (ko) * 2019-11-21 2022-07-14 램 리써치 코포레이션 제조 챔버들 내에서 이상 (anomalous) 플라즈마 이벤트들의 검출 및 위치 확인 (location)
JP7469032B2 (ja) * 2019-12-10 2024-04-16 株式会社荏原製作所 研磨方法および研磨装置
US11544838B2 (en) * 2020-03-21 2023-01-03 Kla Corporation Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging
CN116490321A (zh) * 2020-09-15 2023-07-25 国立大学法人长冈技术科学大学 研磨状态解析预测程序、存储装置、阴极荧光装置以及研磨状态解析预测方法
CN121468390A (zh) * 2026-01-08 2026-02-06 华海清科(北京)科技有限公司 抛光终点检测方法、化学机械抛光设备及存储介质

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Also Published As

Publication number Publication date
WO2012145418A2 (en) 2012-10-26
JP2014512693A (ja) 2014-05-22
JP6017538B2 (ja) 2016-11-02
US20120268738A1 (en) 2012-10-25
TWI465314B (zh) 2014-12-21
TW201249599A (en) 2012-12-16
KR20140025487A (ko) 2014-03-04
US8547538B2 (en) 2013-10-01
WO2012145418A3 (en) 2013-01-24

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