KR101921585B1 - 가압 요소를 갖는 클램핑 조립체 - Google Patents
가압 요소를 갖는 클램핑 조립체 Download PDFInfo
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- KR101921585B1 KR101921585B1 KR1020167036755A KR20167036755A KR101921585B1 KR 101921585 B1 KR101921585 B1 KR 101921585B1 KR 1020167036755 A KR1020167036755 A KR 1020167036755A KR 20167036755 A KR20167036755 A KR 20167036755A KR 101921585 B1 KR101921585 B1 KR 101921585B1
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
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- 239000006260 foam Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- -1 titanium hydride Chemical compound 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L23/4012—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws for stacked arrangements of a plurality of semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/071—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
- H01L2023/4025—Base discrete devices, e.g. presspack, disc-type transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Power Conversion In General (AREA)
Abstract
Description
도 1은 본 발명에 따른 클램핑 조립체의 예시적인 실시예의 단면의 개략도를 도시한다.
도 2는 본 발명에 따른 서브모듈의 예시적인 실시예의 개략도이다.
2: 구성 요소의 배열
3-7: 구성 요소
8, 9: 화살표
10: 가압 요소
11: 가압 대응 요소
12-16: 부분 영역
17: 중심축
18-22: 부분 영역
23: 서브모듈
24, 25: 단자
26: 전력 반도체 스위칭 유닛
27: 전력 반도체 스위치
28: 다이오드
29: 에너지 저장소
Claims (8)
- 스택 내에 서로 위에 위치된 기계적으로 클램핑된 구성 요소(3-7)의 배열(2), 상기 구성 요소(3-7)의 상기 배열에 대해 특정 지점에서 기계적 압축력을 생성하기 위한 클램핑 디바이스, 및 상기 클램핑 디바이스로부터 상기 배열(2)로 영역에 걸쳐 상기 기계적 압축력을 전달하기 위한 가압 요소(10)를 갖는 클램핑 조립체(1)로서,
상기 가압 요소(10)는 금속 폼 재료를 포함하고,
상기 가압 요소(10)는 상이한 탄성 특성을 갖는 복수의 금속 폼 재료를 포함하고,
상기 가압 요소(10) 내의 상기 금속 폼 재료는 부분 영역(12-16)을 형성하며, 상기 부분 영역(12-16)은 상기 부분 영역(12-16)이 부분적으로 서로 둘러싸고 상기 부분 영역(12-16)의 강도가 상기 배열(2)의 중심축(17)에 대해 내부에서 외부로 상승하도록 배열되는 것을 특징으로 하는 클램핑 조립체(1). - 삭제
- 삭제
- 제1항에 있어서,
상기 배열(2)은 반도체 요소(4, 6)를 포함하는 클램핑 조립체(1). - 제4항에 있어서,
상기 배열(2)은 전도성 재료의 적어도 하나의 냉각 판(5)을 포함하고, 상기 적어도 하나의 냉각 판은 상기 반도체 요소(4, 6)에 기대어 배열되고, 따라서 상기 반도체 요소(4, 6)와 상기 냉각 판(5) 사이에 전기 접촉이 존재하는 클램핑 조립체(1). - 제5항에 있어서,
상기 배열은 복수의 반도체 요소(4, 6)를 포함하고, 적어도 하나의 냉각 판(3, 5, 7)이 각각의 반도체 요소(4, 6)에 할당되고, 상기 반도체 요소(4, 6)는 전기 직렬 회로를 구성하는 클램핑 조립체(1). - 제6항에 있어서,
2개의 냉각 판(3, 5, 7)이 각각의 반도체 요소(4, 6)에 할당되고, 상기 반도체 요소(4, 6)의 양측에 배열되는 클램핑 조립체(1). - 그 각각이 동일한 포워드 전도 방향을 갖고서 스위치 온 및 오프될 수 있는 전력 반도체(27)를 포함하고, 그 각각이 상기 포워드 전도 방향과 반대인 방향으로 전도하는 전력 반도체 스위칭 유닛(26)의 적어도 하나의 직렬 회로 및 그와 병렬로 접속 배열된 에너지 저장소(29)를 갖는 컨버터의 서브모듈(23)로서,
상기 전력 반도체 스위칭 유닛(26)의 상기 직렬 회로는 제1항, 제4항, 제5항, 제6항 및 제7항 중 어느 한 항의 클램핑 조립체(1) 내에 구현되는 것을 특징으로 하는 서브모듈(23).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/063954 WO2016000762A1 (de) | 2014-07-01 | 2014-07-01 | Spannverband mit druckstück |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170013938A KR20170013938A (ko) | 2017-02-07 |
KR101921585B1 true KR101921585B1 (ko) | 2018-11-26 |
Family
ID=51136455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020167036755A Expired - Fee Related KR101921585B1 (ko) | 2014-07-01 | 2014-07-01 | 가압 요소를 갖는 클램핑 조립체 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10103085B2 (ko) |
EP (1) | EP3140863A1 (ko) |
KR (1) | KR101921585B1 (ko) |
CN (1) | CN106463500B (ko) |
CA (1) | CA2954019C (ko) |
RU (1) | RU2660397C1 (ko) |
WO (1) | WO2016000762A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6392451B2 (ja) * | 2015-04-27 | 2018-09-19 | 東芝三菱電機産業システム株式会社 | 圧接型半導体素子用スタック |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10103031A1 (de) * | 2001-01-24 | 2002-07-25 | Rainer Marquardt | Stromrichterschaltungen mit verteilten Energiespeichern |
WO2008031370A1 (de) | 2006-09-14 | 2008-03-20 | Siemens Aktiengesellschaft | Leistungshalbleitermodul für die energieverteilung mit explosionsschutz |
Family Cites Families (14)
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DE1010303B (de) * | 1952-07-30 | 1957-06-13 | Nat Res Dev | Vorrichtung fuer die Messung der Geschwindigkeit von Faeden od. dgl. |
JPH081914B2 (ja) | 1987-03-31 | 1996-01-10 | 株式会社東芝 | 圧接型半導体装置 |
US5119175A (en) | 1990-08-17 | 1992-06-02 | Westinghouse Electric Corp. | High power density solid-state, insulating coolant module |
CN1236982A (zh) * | 1998-01-22 | 1999-12-01 | 株式会社日立制作所 | 压力接触型半导体器件及其转换器 |
JP2000349100A (ja) * | 1999-06-04 | 2000-12-15 | Shibafu Engineering Kk | 接合材とその製造方法及び半導体装置 |
US6631078B2 (en) | 2002-01-10 | 2003-10-07 | International Business Machines Corporation | Electronic package with thermally conductive standoff |
JP3847676B2 (ja) * | 2002-07-15 | 2006-11-22 | 三菱電機株式会社 | パワー半導体装置 |
EP1403923A1 (en) | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
JP4234614B2 (ja) * | 2004-01-21 | 2009-03-04 | 株式会社日立製作所 | 圧接型半導体装置、及びこれを用いた変換器 |
DE102006031213B3 (de) | 2006-07-03 | 2007-09-06 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur Herstellung von Metallschäumen und Metallschaum |
CN101593748B (zh) | 2009-06-30 | 2011-08-17 | 许继集团有限公司 | 顶压连接的串联晶闸管阀段 |
CN201780970U (zh) | 2010-07-12 | 2011-03-30 | 中国电力科学研究院 | 一种直流输电换流阀用晶闸管压装机构 |
DE102011006990B4 (de) | 2011-04-07 | 2015-03-26 | Siemens Aktiengesellschaft | Kühldoseneinheit |
CA2848802A1 (en) | 2011-09-28 | 2013-04-04 | General Electric Company | Clamping mechanism and method for applying rated force to power conversion apparatus |
-
2014
- 2014-07-01 WO PCT/EP2014/063954 patent/WO2016000762A1/de active Application Filing
- 2014-07-01 CN CN201480080060.7A patent/CN106463500B/zh not_active Expired - Fee Related
- 2014-07-01 RU RU2016150828A patent/RU2660397C1/ru active
- 2014-07-01 US US15/323,340 patent/US10103085B2/en active Active
- 2014-07-01 KR KR1020167036755A patent/KR101921585B1/ko not_active Expired - Fee Related
- 2014-07-01 EP EP14736352.7A patent/EP3140863A1/de not_active Withdrawn
- 2014-07-01 CA CA2954019A patent/CA2954019C/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10103031A1 (de) * | 2001-01-24 | 2002-07-25 | Rainer Marquardt | Stromrichterschaltungen mit verteilten Energiespeichern |
WO2008031370A1 (de) | 2006-09-14 | 2008-03-20 | Siemens Aktiengesellschaft | Leistungshalbleitermodul für die energieverteilung mit explosionsschutz |
Also Published As
Publication number | Publication date |
---|---|
RU2660397C1 (ru) | 2018-07-06 |
CA2954019A1 (en) | 2016-01-07 |
CN106463500A (zh) | 2017-02-22 |
CN106463500B (zh) | 2020-05-15 |
US20170162470A1 (en) | 2017-06-08 |
KR20170013938A (ko) | 2017-02-07 |
US10103085B2 (en) | 2018-10-16 |
EP3140863A1 (de) | 2017-03-15 |
WO2016000762A1 (de) | 2016-01-07 |
CA2954019C (en) | 2019-10-15 |
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