KR101911993B1 - 패턴을 생성하기 위한 방법, 저장 매체 및 정보 처리 장치 - Google Patents

패턴을 생성하기 위한 방법, 저장 매체 및 정보 처리 장치 Download PDF

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Publication number
KR101911993B1
KR101911993B1 KR1020150102789A KR20150102789A KR101911993B1 KR 101911993 B1 KR101911993 B1 KR 101911993B1 KR 1020150102789 A KR1020150102789 A KR 1020150102789A KR 20150102789 A KR20150102789 A KR 20150102789A KR 101911993 B1 KR101911993 B1 KR 101911993B1
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South Korea
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pattern
cell
auxiliary
occupied area
auxiliary pattern
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Korean (ko)
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KR20160011586A (ko
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히로유키 이시이
료 나카야마
다다시 아라이
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캐논 가부시끼가이샤
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    • G06F17/5068—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G03F1/144—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020150102789A 2014-07-22 2015-07-21 패턴을 생성하기 위한 방법, 저장 매체 및 정보 처리 장치 Active KR101911993B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-149015 2014-07-22
JP2014149015A JP6415154B2 (ja) 2014-07-22 2014-07-22 パターンの作成方法、プログラムおよび情報処理装置

Publications (2)

Publication Number Publication Date
KR20160011586A KR20160011586A (ko) 2016-02-01
KR101911993B1 true KR101911993B1 (ko) 2018-10-25

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KR1020150102789A Active KR101911993B1 (ko) 2014-07-22 2015-07-21 패턴을 생성하기 위한 방법, 저장 매체 및 정보 처리 장치

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Country Link
US (1) US9811623B2 (enExample)
JP (1) JP6415154B2 (enExample)
KR (1) KR101911993B1 (enExample)
CN (1) CN105278235B (enExample)
TW (1) TWI597561B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6238687B2 (ja) * 2013-11-12 2017-11-29 キヤノン株式会社 マスクパターン作成方法、光学像の計算方法
JP7741394B2 (ja) * 2022-03-18 2025-09-18 富士通株式会社 設計プログラム、設計方法及び設計装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070003127A1 (en) * 2005-06-27 2007-01-04 Ayako Nakano Semiconductor device pattern creation method, pattern data processing method, pattern data processing program, and semiconductor device manufacturing method
US20080066041A1 (en) 2006-08-14 2008-03-13 Kahng Andrew B Auxiliary pattern generation for cell-based optical proximity correction
JP2008098203A (ja) 2006-10-05 2008-04-24 Fujitsu Ltd 膜のパターニング方法及び露光用マスク
US20130275926A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Novel methodology of optical proximity correction optimization

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003324149A (ja) * 2002-04-26 2003-11-14 Nec Electronics Corp ダミーパターンの自動発生方法
JP4040515B2 (ja) 2003-03-26 2008-01-30 株式会社東芝 マスクのセット、マスクデータ作成方法及びパターン形成方法
JP2004294664A (ja) * 2003-03-26 2004-10-21 Fujitsu Ltd レチクルの作成方法、およびレチクルの作成プログラム
JP3993545B2 (ja) 2003-09-04 2007-10-17 株式会社東芝 パターンの作製方法、半導体装置の製造方法、パターンの作製システム、セルライブラリ、フォトマスクの製造方法
JP2007057849A (ja) * 2005-08-24 2007-03-08 Toshiba Microelectronics Corp パターン検査方法、露光用マスク、およびパターン検査プログラム
US8286107B2 (en) 2007-02-20 2012-10-09 Tela Innovations, Inc. Methods and systems for process compensation technique acceleration
US7763398B2 (en) * 2007-05-02 2010-07-27 Dongbu Hitek Co., Ltd. Layout method for mask
JP5106220B2 (ja) 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
US8413083B2 (en) 2009-05-13 2013-04-02 Globalfoundries Singapore Pte. Ltd. Mask system employing substantially circular optical proximity correction target and method of manufacture thereof
CN102738167B (zh) * 2011-03-31 2017-02-22 中国科学院微电子研究所 半导体器件及其形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070003127A1 (en) * 2005-06-27 2007-01-04 Ayako Nakano Semiconductor device pattern creation method, pattern data processing method, pattern data processing program, and semiconductor device manufacturing method
US20080066041A1 (en) 2006-08-14 2008-03-13 Kahng Andrew B Auxiliary pattern generation for cell-based optical proximity correction
JP2008098203A (ja) 2006-10-05 2008-04-24 Fujitsu Ltd 膜のパターニング方法及び露光用マスク
US20130275926A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Novel methodology of optical proximity correction optimization

Also Published As

Publication number Publication date
CN105278235A (zh) 2016-01-27
TW201604645A (zh) 2016-02-01
JP2016024372A (ja) 2016-02-08
US20160026743A1 (en) 2016-01-28
CN105278235B (zh) 2019-11-05
KR20160011586A (ko) 2016-02-01
US9811623B2 (en) 2017-11-07
JP6415154B2 (ja) 2018-10-31
TWI597561B (zh) 2017-09-01

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