KR101877862B1 - 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Download PDF

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KR101877862B1
KR101877862B1 KR1020150180178A KR20150180178A KR101877862B1 KR 101877862 B1 KR101877862 B1 KR 101877862B1 KR 1020150180178 A KR1020150180178 A KR 1020150180178A KR 20150180178 A KR20150180178 A KR 20150180178A KR 101877862 B1 KR101877862 B1 KR 101877862B1
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light
plasma
window
processing
processing chamber
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KR20160075350A (ko
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다케시 오모리
다이스케 사토
다테히토 우스이
사토미 이노우에
겐지 마에다
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H01L21/02315—
    • H01L21/0234—
    • H01L21/32136—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1020150180178A 2014-12-19 2015-12-16 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Active KR101877862B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014256786 2014-12-19
JPJP-P-2014-256786 2014-12-19

Related Child Applications (1)

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KR1020180078517A Division KR101960826B1 (ko) 2014-12-19 2018-07-06 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법

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KR20160075350A KR20160075350A (ko) 2016-06-29
KR101877862B1 true KR101877862B1 (ko) 2018-07-12

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KR1020180078517A Active KR101960826B1 (ko) 2014-12-19 2018-07-06 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법

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US (2) US10008370B2 (cg-RX-API-DMAC10.html)
JP (2) JP6650259B2 (cg-RX-API-DMAC10.html)
KR (2) KR101877862B1 (cg-RX-API-DMAC10.html)
TW (1) TWI592980B (cg-RX-API-DMAC10.html)

Cited By (1)

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KR20200098472A (ko) * 2019-02-08 2020-08-20 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기

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JP6524753B2 (ja) * 2015-03-30 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US11126092B2 (en) * 2015-11-13 2021-09-21 Asml Netherlands B.V. Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value
JP6643202B2 (ja) * 2016-07-21 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理データを解析する解析方法
US10365212B2 (en) * 2016-11-14 2019-07-30 Verity Instruments, Inc. System and method for calibration of optical signals in semiconductor process systems
JP2018107264A (ja) * 2016-12-26 2018-07-05 東京エレクトロン株式会社 消耗判定方法及びプラズマ処理装置
US10134569B1 (en) * 2017-11-28 2018-11-20 Lam Research Corporation Method and apparatus for real-time monitoring of plasma chamber wall condition
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
KR102030428B1 (ko) 2018-03-28 2019-11-18 삼성전자주식회사 방출 분광기의 캘리브레이터
KR102833948B1 (ko) 2018-11-22 2025-07-15 삼성전자주식회사 기판 처리 장치, 기판 처리 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102687949B1 (ko) 2018-12-27 2024-07-25 삼성전자주식회사 기판 처리 장치, 기판 처리 모듈 및 반도체 소자 제조 방법
WO2020166048A1 (ja) * 2019-02-15 2020-08-20 株式会社日立ハイテクノロジーズ ガス成分のモニタ方法及びその装置並びにそれを用いた処理装置
JP7183090B2 (ja) * 2019-03-20 2022-12-05 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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KR102728521B1 (ko) * 2019-04-05 2024-11-13 삼성전자주식회사 광학 방출 분석 캘리브레이션 장치 및 시스템
US11114286B2 (en) 2019-04-08 2021-09-07 Applied Materials, Inc. In-situ optical chamber surface and process sensor
US12002665B2 (en) * 2019-07-01 2024-06-04 Applied Materials, Inc. Real-time detection of particulate matter during deposition chamber manufacturing
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置
JP2021163949A (ja) * 2020-04-03 2021-10-11 東京エレクトロン株式会社 測定方法及びプラズマ処理装置
US11708635B2 (en) 2020-06-12 2023-07-25 Applied Materials, Inc. Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner
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JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
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JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
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JPH02170971A (ja) * 1988-12-23 1990-07-02 Shimadzu Corp スパッタリング装置
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
KR0152355B1 (ko) * 1994-03-24 1998-12-01 가나이 쓰토무 플라즈마 처리장치 및 처리방법
JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
JPH10102251A (ja) * 1996-09-06 1998-04-21 Toshio Goto 炭素原子による成膜及びエッチング処理方法及びその装置
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Publication number Priority date Publication date Assignee Title
KR20200098472A (ko) * 2019-02-08 2020-08-20 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기
KR102286360B1 (ko) 2019-02-08 2021-08-05 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기

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US10672595B2 (en) 2020-06-02
JP2020065081A (ja) 2020-04-23
TW201624528A (zh) 2016-07-01
KR20160075350A (ko) 2016-06-29
JP2016119473A (ja) 2016-06-30
TWI592980B (zh) 2017-07-21
JP6650259B2 (ja) 2020-02-19
US10008370B2 (en) 2018-06-26
JP6877601B2 (ja) 2021-05-26
KR20180081693A (ko) 2018-07-17
US20160177449A1 (en) 2016-06-23
KR101960826B1 (ko) 2019-07-17
US20180269042A1 (en) 2018-09-20

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