KR101874681B1 - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

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Publication number
KR101874681B1
KR101874681B1 KR1020160012713A KR20160012713A KR101874681B1 KR 101874681 B1 KR101874681 B1 KR 101874681B1 KR 1020160012713 A KR1020160012713 A KR 1020160012713A KR 20160012713 A KR20160012713 A KR 20160012713A KR 101874681 B1 KR101874681 B1 KR 101874681B1
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South Korea
Prior art keywords
gas
plasma
plasma processing
processing vessel
etching
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KR1020160012713A
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Korean (ko)
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KR20160095630A (ko
Inventor
도시하루 와다
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H01L21/02046—
    • H01L21/02274—
    • H01L21/02315—
    • H01L21/67034—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H01L2021/60187—
    • H01L2924/01024—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
KR1020160012713A 2015-02-03 2016-02-02 플라즈마 처리 방법 및 플라즈마 처리 장치 Active KR101874681B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-019660 2015-02-03
JP2015019660A JP6396819B2 (ja) 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20160095630A KR20160095630A (ko) 2016-08-11
KR101874681B1 true KR101874681B1 (ko) 2018-07-04

Family

ID=56554652

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160012713A Active KR101874681B1 (ko) 2015-02-03 2016-02-02 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (4)

Country Link
US (1) US9583317B2 (https=)
JP (1) JP6396819B2 (https=)
KR (1) KR101874681B1 (https=)
TW (1) TWI686842B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832757B2 (ja) * 2017-03-14 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置及びシーズニング方法
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
JP7341099B2 (ja) * 2020-04-07 2023-09-08 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置
TWI836713B (zh) * 2021-11-12 2024-03-21 南韓商Ｔｅｓ股份有限公司 基板處理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091327A (ja) * 1998-09-17 2000-03-31 Hitachi Ltd プラズマ処理装置のクリーニング方法およびその装置
JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
US20060086692A1 (en) 2004-10-25 2006-04-27 Kotaro Fujimoto Plasma etching method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US5536364A (en) * 1993-06-04 1996-07-16 Nippon Soken, Inc. Process of plasma etching silicon
US6491835B1 (en) * 1999-12-20 2002-12-10 Applied Materials, Inc. Metal mask etching of silicon
US6527968B1 (en) * 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7234222B1 (en) * 2003-09-26 2007-06-26 Lam Research Corporation Methods and apparatus for optimizing the delivery of a set of gases in a plasma processing system
JP4438566B2 (ja) * 2004-08-25 2010-03-24 セイコーエプソン株式会社 電気光学装置の製造方法
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP2009188257A (ja) * 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
US8852685B2 (en) * 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091327A (ja) * 1998-09-17 2000-03-31 Hitachi Ltd プラズマ処理装置のクリーニング方法およびその装置
JP2004190136A (ja) * 2002-11-28 2004-07-08 Tokyo Electron Ltd プラズマ処理容器内部材
US20060086692A1 (en) 2004-10-25 2006-04-27 Kotaro Fujimoto Plasma etching method

Also Published As

Publication number Publication date
TW201707047A (zh) 2017-02-16
JP2016143803A (ja) 2016-08-08
TWI686842B (zh) 2020-03-01
KR20160095630A (ko) 2016-08-11
US9583317B2 (en) 2017-02-28
JP6396819B2 (ja) 2018-09-26
US20160225585A1 (en) 2016-08-04

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