KR101874504B1 - 마스크 블랭크용 기판, 마스크 블랭크, 반사형 마스크 블랭크, 전사 마스크, 및 반사형 마스크, 그리고 그들의 제조방법 - Google Patents

마스크 블랭크용 기판, 마스크 블랭크, 반사형 마스크 블랭크, 전사 마스크, 및 반사형 마스크, 그리고 그들의 제조방법 Download PDF

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Publication number
KR101874504B1
KR101874504B1 KR1020137031095A KR20137031095A KR101874504B1 KR 101874504 B1 KR101874504 B1 KR 101874504B1 KR 1020137031095 A KR1020137031095 A KR 1020137031095A KR 20137031095 A KR20137031095 A KR 20137031095A KR 101874504 B1 KR101874504 B1 KR 101874504B1
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South Korea
Prior art keywords
substrate
mask blank
main surface
substrate mark
mask
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Korean (ko)
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KR20140027314A (ko
Inventor
다츠야 사사키
다카히토 니시무라
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24488—Differential nonuniformity at margin

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Glass (AREA)
KR1020137031095A 2011-05-19 2012-05-15 마스크 블랭크용 기판, 마스크 블랭크, 반사형 마스크 블랭크, 전사 마스크, 및 반사형 마스크, 그리고 그들의 제조방법 Active KR101874504B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-112185 2011-05-19
JP2011112185 2011-05-19
PCT/JP2012/062373 WO2012157629A1 (ja) 2011-05-19 2012-05-15 マスクブランク用基板、マスクブランク、反射型マスクブランク、転写マスク、及び反射型マスク、並びにそれらの製造方法

Publications (2)

Publication Number Publication Date
KR20140027314A KR20140027314A (ko) 2014-03-06
KR101874504B1 true KR101874504B1 (ko) 2018-07-04

Family

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KR1020137031095A Active KR101874504B1 (ko) 2011-05-19 2012-05-15 마스크 블랭크용 기판, 마스크 블랭크, 반사형 마스크 블랭크, 전사 마스크, 및 반사형 마스크, 그리고 그들의 제조방법

Country Status (5)

Country Link
US (1) US9400421B2 (enExample)
JP (2) JP5951352B2 (enExample)
KR (1) KR101874504B1 (enExample)
TW (2) TWI551939B (enExample)
WO (1) WO2012157629A1 (enExample)

Families Citing this family (12)

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JP6055732B2 (ja) * 2013-07-26 2016-12-27 Hoya株式会社 マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法
KR102262761B1 (ko) * 2013-09-06 2021-06-09 도판 인사츠 가부시키가이샤 반사형 포토마스크 및 그 제조 방법
JP6384303B2 (ja) * 2014-12-10 2018-09-05 Ａｇｃ株式会社 ガラス基板の研磨方法
JP2017040900A (ja) * 2015-08-18 2017-02-23 旭硝子株式会社 マスクブランク用の基板の製造方法、マスクブランク用の基板、マスクブランク、およびフォトマスク
TWI680347B (zh) * 2015-12-29 2019-12-21 日商Ｈｏｙａ股份有限公司 光罩基板、光罩基底、光罩、光罩基板之製造方法、光罩之製造方法、及顯示裝置之製造方法
JP6293986B1 (ja) * 2016-07-27 2018-03-14 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク
DE102017213406A1 (de) * 2017-08-02 2019-02-07 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie und Verfahren zur Anpassung einer Geometrie einer Komponente
CN119575749A (zh) * 2018-10-15 2025-03-07 Asml荷兰有限公司 制造隔膜组件的方法
DE102019100839B4 (de) * 2019-01-14 2024-11-14 Advanced Mask Technology Center Gmbh & Co. Kg Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske
JP2022123773A (ja) * 2021-02-12 2022-08-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
JP7718615B1 (ja) * 2025-03-28 2025-08-05 大日本印刷株式会社 反射型マスクおよび半導体装置の製造方法

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JP2005221705A (ja) 2004-02-05 2005-08-18 Semiconductor Leading Edge Technologies Inc フォトマスク用石英基板判別装置

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JPS5217815A (en) * 1975-07-30 1977-02-10 Fuji Photo Film Co Ltd Substrate and material using the same
JPS61124942A (ja) * 1984-11-22 1986-06-12 Asahi Glass Co Ltd フオトマスクブランク及びその製造方法
JP2000356849A (ja) * 1999-06-15 2000-12-26 Mito Asahi Fine Glass Co Ltd フォトマスク用基板
JP2002131884A (ja) * 2000-10-30 2002-05-09 Hitachi Ltd フォトマスクの製造方法、フォトマスクおよび半導体集積回路装置の製造方法
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP3966840B2 (ja) 2002-08-19 2007-08-29 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、転写マスクの製造方法、及び半導体装置の製造方法、並びにマスクブランクス用ガラス基板、マスクブランクス、転写マスク
KR101004525B1 (ko) 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
US7579120B2 (en) * 2003-03-20 2009-08-25 Hoya Corporation Substrate for reticle and method of manufacturing the substrate, and mask blank and method of manufacturing the mask blank
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JP4339214B2 (ja) 2004-09-13 2009-10-07 Ｈｏｙａ株式会社 マスクブランク用透明基板とその製造方法及びマスクブランクとその製造方法
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JP4776038B2 (ja) * 2008-06-18 2011-09-21 Ｈｏｙａ株式会社 マスクブランク用ガラス基板の製造方法、マスクブランクの製造方法およびマスクの製造方法
JP4536804B2 (ja) 2008-06-27 2010-09-01 Ｈｏｙａ株式会社 フォトマスクの製造方法

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Also Published As

Publication number Publication date
JP5951352B2 (ja) 2016-07-13
KR20140027314A (ko) 2014-03-06
TW201642017A (zh) 2016-12-01
WO2012157629A1 (ja) 2012-11-22
JP2012256038A (ja) 2012-12-27
TW201310163A (zh) 2013-03-01
JP6216835B2 (ja) 2017-10-18
US9400421B2 (en) 2016-07-26
JP2016177317A (ja) 2016-10-06
TWI610124B (zh) 2018-01-01
TWI551939B (zh) 2016-10-01
US20140234755A1 (en) 2014-08-21

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