KR101844106B1 - 티오시아네이토 또는 이소티오시아네이토 치환된 나프탈렌 디이미드 및 릴렌 디이미드 화합물 및 n형 반도체로서의 그의 용도 - Google Patents
티오시아네이토 또는 이소티오시아네이토 치환된 나프탈렌 디이미드 및 릴렌 디이미드 화합물 및 n형 반도체로서의 그의 용도 Download PDFInfo
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- KR101844106B1 KR101844106B1 KR1020137021061A KR20137021061A KR101844106B1 KR 101844106 B1 KR101844106 B1 KR 101844106B1 KR 1020137021061 A KR1020137021061 A KR 1020137021061A KR 20137021061 A KR20137021061 A KR 20137021061A KR 101844106 B1 KR101844106 B1 KR 101844106B1
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- CKTMPVUTKWPIPN-PMACEKPBSA-N CCCC[C@H](C)N(C(c1ccc(-c(c2c3c(C(N4[C@@H](C)CCCC)=O)c5)c5N=C=S)c5c1c1cc(N=C=S)c5-c2ccc3C4=O)=O)C1=O Chemical compound CCCC[C@H](C)N(C(c1ccc(-c(c2c3c(C(N4[C@@H](C)CCCC)=O)c5)c5N=C=S)c5c1c1cc(N=C=S)c5-c2ccc3C4=O)=O)C1=O CKTMPVUTKWPIPN-PMACEKPBSA-N 0.000 description 1
- 0 Cc(cc(c1c2c(C(N3C*)=O)cc(N=C=S)c1C(N1C*)=O)C1=O)c2C3=O Chemical compound Cc(cc(c1c2c(C(N3C*)=O)cc(N=C=S)c1C(N1C*)=O)C1=O)c2C3=O 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/06—Peri-condensed systems
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
- C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
- C09B57/08—Naphthalimide dyes; Phthalimide dyes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161431067P | 2011-01-10 | 2011-01-10 | |
| US61/431,067 | 2011-01-10 | ||
| PCT/IB2012/050121 WO2012095790A1 (en) | 2011-01-10 | 2012-01-10 | Thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds and their use as n-type semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140056147A KR20140056147A (ko) | 2014-05-09 |
| KR101844106B1 true KR101844106B1 (ko) | 2018-03-30 |
Family
ID=46506808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137021061A Expired - Fee Related KR101844106B1 (ko) | 2011-01-10 | 2012-01-10 | 티오시아네이토 또는 이소티오시아네이토 치환된 나프탈렌 디이미드 및 릴렌 디이미드 화합물 및 n형 반도체로서의 그의 용도 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8710225B2 (enExample) |
| EP (1) | EP2683718B1 (enExample) |
| JP (1) | JP6025748B2 (enExample) |
| KR (1) | KR101844106B1 (enExample) |
| CN (1) | CN103415517B (enExample) |
| WO (1) | WO2012095790A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9583719B2 (en) | 2011-08-12 | 2017-02-28 | Basf Se | Carbazolocarbazol-bis(dicarboximides) and their use as semiconductors |
| US8901547B2 (en) * | 2012-08-25 | 2014-12-02 | Polyera Corporation | Stacked structure organic light-emitting transistors |
| CN104045657B (zh) * | 2013-03-14 | 2017-07-21 | 中国科学院化学研究所 | 五元杂环衍生物桥联的苝二酰亚胺二聚体、其制备方法及其在有机光伏器件中的应用 |
| CN104177378A (zh) * | 2013-05-21 | 2014-12-03 | 中国科学院化学研究所 | 四取代的苝二酰亚胺二聚体、其制备方法及其在有机光伏器件中的应用 |
| JP6402464B2 (ja) * | 2014-03-24 | 2018-10-10 | 東洋インキScホールディングス株式会社 | ハロゲン化有機顔料の製造方法、その製造方法により得られるハロゲン化有機顔料およびそれを含む着色組成物 |
| WO2015019659A1 (ja) * | 2013-08-05 | 2015-02-12 | 東洋インキScホールディングス株式会社 | ハロゲン化有機顔料の製造方法、その製造方法により得られるハロゲン化有機顔料およびそれを含む着色組成物 |
| US10186664B2 (en) | 2014-06-17 | 2019-01-22 | Basf Se | N-fluoroalkyl-substituted dibromonaphthalene diimides and their use as semiconductor |
| JP2017528915A (ja) * | 2014-08-28 | 2017-09-28 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 低分子半導体化合物及び非導電性ポリマーを含有する薄膜半導体 |
| US11296290B2 (en) | 2018-03-07 | 2022-04-05 | Clap Co., Ltd. | Patterning method for preparing top-gate, bottom-contact organic field effect transistors |
| EP3762980B1 (en) | 2018-03-08 | 2023-08-09 | Clap Co., Ltd. | Organic field effect transistor comprising semiconducting single-walled carbon nanotubes and organic semiconducting material |
| CN108503637A (zh) * | 2018-03-19 | 2018-09-07 | 桂林理工大学 | 一种新型n位不对称苝酰亚胺分子及其有机无机复合物 |
| KR102457044B1 (ko) | 2018-06-26 | 2022-10-21 | 주식회사 클랩 | 유전체로서의 비닐에테르계 고분자 |
| CN109776533B (zh) * | 2019-02-12 | 2020-10-30 | 宁波卢米蓝新材料有限公司 | 一种萘二酰亚胺衍生物及其制备方法和应用 |
| CN114188534B (zh) * | 2021-12-16 | 2024-02-02 | 郑州轻工业大学 | 一种含硫原子的萘二酰亚胺正极材料及其制备方法和应用 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19547209A1 (de) | 1995-12-18 | 1997-06-19 | Basf Ag | 1,7-Diaroxy-oder -arylthiosubstituierte Perylen-3,4,9,10-tetracarbonsäuren, deren Dianhydride und Diimide |
| JP4338981B2 (ja) * | 2003-01-21 | 2009-10-07 | 日本化薬株式会社 | 色素増感光電変換素子 |
| US8344142B2 (en) * | 2004-06-14 | 2013-01-01 | Georgia Tech Research Corporation | Perylene charge-transport materials, methods of fabrication thereof, and methods of use thereof |
| WO2006086082A2 (en) | 2004-12-23 | 2006-08-17 | Northwestern University | Siloxane-polymer dielectric compositions and related organic field-effect transistors |
| US7678463B2 (en) | 2005-12-20 | 2010-03-16 | Northwestern University | Intercalated superlattice compositions and related methods for modulating dielectric property |
| US20070259475A1 (en) | 2006-05-04 | 2007-11-08 | Basf Aktiengesellschaft | Method for producing organic field-effect transistors |
| JP2008019343A (ja) * | 2006-07-13 | 2008-01-31 | Harison Toshiba Lighting Corp | クマリン系化合物およびそれを用いた有機el素子 |
| US8404844B2 (en) | 2008-02-05 | 2013-03-26 | Basf Se | Perylene semiconductors and methods of preparation and use thereof |
| ITMI20081211A1 (it) | 2008-06-30 | 2010-01-01 | Eni Spa | Copolimeri coniugati a basso gap e relativo procedimento di preparazione |
| TWI473804B (zh) * | 2008-07-29 | 2015-02-21 | Solvay | 用於光伏打裝置之二萘嵌苯四羧醯亞胺衍生物 |
-
2012
- 2012-01-10 KR KR1020137021061A patent/KR101844106B1/ko not_active Expired - Fee Related
- 2012-01-10 EP EP12733976.0A patent/EP2683718B1/en not_active Not-in-force
- 2012-01-10 JP JP2013548917A patent/JP6025748B2/ja not_active Expired - Fee Related
- 2012-01-10 US US13/978,830 patent/US8710225B2/en not_active Expired - Fee Related
- 2012-01-10 WO PCT/IB2012/050121 patent/WO2012095790A1/en not_active Ceased
- 2012-01-10 CN CN201280012349.6A patent/CN103415517B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014508741A (ja) | 2014-04-10 |
| EP2683718B1 (en) | 2017-05-24 |
| US8710225B2 (en) | 2014-04-29 |
| CN103415517B (zh) | 2016-05-25 |
| KR20140056147A (ko) | 2014-05-09 |
| EP2683718A4 (en) | 2015-01-07 |
| US20130289279A1 (en) | 2013-10-31 |
| WO2012095790A1 (en) | 2012-07-19 |
| JP6025748B2 (ja) | 2016-11-16 |
| CN103415517A (zh) | 2013-11-27 |
| EP2683718A1 (en) | 2014-01-15 |
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