KR101835877B1 - 트렌치 영역에 배치된 캐소드 금속층을 이용한 반도체 레이저 - Google Patents

트렌치 영역에 배치된 캐소드 금속층을 이용한 반도체 레이저 Download PDF

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Publication number
KR101835877B1
KR101835877B1 KR1020157029129A KR20157029129A KR101835877B1 KR 101835877 B1 KR101835877 B1 KR 101835877B1 KR 1020157029129 A KR1020157029129 A KR 1020157029129A KR 20157029129 A KR20157029129 A KR 20157029129A KR 101835877 B1 KR101835877 B1 KR 101835877B1
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KR
South Korea
Prior art keywords
cathode
layer
junction
laser
laser diode
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Expired - Fee Related
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KR1020157029129A
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English (en)
Korean (ko)
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KR20150132386A (ko
Inventor
스코트 이. 올슨
Original Assignee
시게이트 테크놀로지 엘엘씨
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Priority claimed from US13/802,239 external-priority patent/US8923357B2/en
Application filed by 시게이트 테크놀로지 엘엘씨 filed Critical 시게이트 테크놀로지 엘엘씨
Publication of KR20150132386A publication Critical patent/KR20150132386A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/105—Mounting of head within housing or assembling of head and housing
    • H01S5/02272—
    • H01S5/02276—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Magnetic Heads (AREA)
  • Optical Head (AREA)
KR1020157029129A 2013-03-13 2014-03-12 트렌치 영역에 배치된 캐소드 금속층을 이용한 반도체 레이저 Expired - Fee Related KR101835877B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/802,239 US8923357B2 (en) 2011-09-13 2013-03-13 Semiconductor laser with cathode metal layer disposed in trench region
US13/802,239 2013-03-13
PCT/US2014/024206 WO2014165039A1 (en) 2013-03-13 2014-03-12 Semiconductor laser with cathode metal layer disposed in trench region

Publications (2)

Publication Number Publication Date
KR20150132386A KR20150132386A (ko) 2015-11-25
KR101835877B1 true KR101835877B1 (ko) 2018-03-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029129A Expired - Fee Related KR101835877B1 (ko) 2013-03-13 2014-03-12 트렌치 영역에 배치된 캐소드 금속층을 이용한 반도체 레이저

Country Status (4)

Country Link
JP (1) JP2016517632A (https=)
KR (1) KR101835877B1 (https=)
CN (1) CN105144511B (https=)
WO (1) WO2014165039A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4113104A3 (en) 2016-06-01 2023-02-22 Quantum-si Incorporated Integrated device for detecting and analyzing molecules
US12506321B2 (en) * 2021-06-16 2025-12-23 Western Digital Technologies, Inc. Vertical cavity surface emitting laser and head gimbal assembly
WO2024253683A1 (en) * 2022-04-11 2024-12-12 The University Of Chicago Quantum coherent devices using a thin film on si/soi platform

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230785B2 (ja) * 1993-11-11 2001-11-19 日本電信電話株式会社 半導体レーザおよびその製造方法
US20110266469A1 (en) * 2010-04-30 2011-11-03 Seagate Technology Llc Method and Apparatus for Aligning a Laser Diode on a Slider

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020028390A1 (en) * 1997-09-22 2002-03-07 Mohammad A. Mazed Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
JP4155368B2 (ja) * 1998-03-19 2008-09-24 日本オプネクスト株式会社 半導体レーザアレイ素子
JP3348024B2 (ja) * 1998-08-17 2002-11-20 松下電器産業株式会社 半導体レーザ装置
US6625367B2 (en) * 2000-08-21 2003-09-23 Triquint Technology Holding Co. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
DE60215303D1 (de) * 2002-04-25 2006-11-23 Avalon Photonics Ag Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
JP4409484B2 (ja) * 2004-08-20 2010-02-03 パナソニック株式会社 半導体発光装置
JP2007027181A (ja) * 2005-07-12 2007-02-01 Sharp Corp 窒化物半導体レーザ装置
JP2011077221A (ja) * 2009-09-30 2011-04-14 Oki Electric Industry Co Ltd 半導体レーザ及びその高周波特性測定方法
US8406091B2 (en) * 2010-07-08 2013-03-26 Tdk Corporation Thermal assisted magnetic recording head having integral mounted of photo-detector and laser diode
MY161466A (en) * 2011-04-29 2017-04-14 Seagate Technology Llc Method and apparatus for aligning a laser diode on a slider

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230785B2 (ja) * 1993-11-11 2001-11-19 日本電信電話株式会社 半導体レーザおよびその製造方法
US20110266469A1 (en) * 2010-04-30 2011-11-03 Seagate Technology Llc Method and Apparatus for Aligning a Laser Diode on a Slider

Also Published As

Publication number Publication date
JP2016517632A (ja) 2016-06-16
CN105144511A (zh) 2015-12-09
CN105144511B (zh) 2018-10-19
WO2014165039A1 (en) 2014-10-09
KR20150132386A (ko) 2015-11-25

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