JP2016517632A - トレンチ領域に配置されたカソード金属層を備える半導体レーザ - Google Patents

トレンチ領域に配置されたカソード金属層を備える半導体レーザ Download PDF

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Publication number
JP2016517632A
JP2016517632A JP2016501438A JP2016501438A JP2016517632A JP 2016517632 A JP2016517632 A JP 2016517632A JP 2016501438 A JP2016501438 A JP 2016501438A JP 2016501438 A JP2016501438 A JP 2016501438A JP 2016517632 A JP2016517632 A JP 2016517632A
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JP
Japan
Prior art keywords
laser diode
cathode
layer
laser
region
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Pending
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JP2016501438A
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English (en)
Japanese (ja)
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JP2016517632A5 (https=
Inventor
オルソン，スコット・イー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
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Seagate Technology LLC
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Filing date
Publication date
Priority claimed from US13/802,239 external-priority patent/US8923357B2/en
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2016517632A publication Critical patent/JP2016517632A/ja
Publication of JP2016517632A5 publication Critical patent/JP2016517632A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/105—Mounting of head within housing or assembling of head and housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Magnetic Heads (AREA)
  • Optical Head (AREA)
JP2016501438A 2013-03-13 2014-03-12 トレンチ領域に配置されたカソード金属層を備える半導体レーザ Pending JP2016517632A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/802,239 US8923357B2 (en) 2011-09-13 2013-03-13 Semiconductor laser with cathode metal layer disposed in trench region
US13/802,239 2013-03-13
PCT/US2014/024206 WO2014165039A1 (en) 2013-03-13 2014-03-12 Semiconductor laser with cathode metal layer disposed in trench region

Publications (2)

Publication Number Publication Date
JP2016517632A true JP2016517632A (ja) 2016-06-16
JP2016517632A5 JP2016517632A5 (https=) 2017-04-13

Family

ID=51659046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501438A Pending JP2016517632A (ja) 2013-03-13 2014-03-12 トレンチ領域に配置されたカソード金属層を備える半導体レーザ

Country Status (4)

Country Link
JP (1) JP2016517632A (https=)
KR (1) KR101835877B1 (https=)
CN (1) CN105144511B (https=)
WO (1) WO2014165039A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4113104A3 (en) 2016-06-01 2023-02-22 Quantum-si Incorporated Integrated device for detecting and analyzing molecules
US12506321B2 (en) * 2021-06-16 2025-12-23 Western Digital Technologies, Inc. Vertical cavity surface emitting laser and head gimbal assembly
WO2024253683A1 (en) * 2022-04-11 2024-12-12 The University Of Chicago Quantum coherent devices using a thin film on si/soi platform

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058965A (ja) * 1998-08-17 2000-02-25 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び半導体レーザ素子
JP2001517866A (ja) * 1997-09-22 2001-10-09 クアンタム デバイシーズ， インコーポレイテッド 多波長半導体レーザアレイ装置（チップ）を製造および実装する技術、ならびにシステムアーキテクチャにおけるその応用
US20020076187A1 (en) * 2000-08-21 2002-06-20 Agere Systems Optoelectronics Guardian Corp. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2006156947A (ja) * 2004-08-20 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2007027181A (ja) * 2005-07-12 2007-02-01 Sharp Corp 窒化物半導体レーザ装置
JP2011077221A (ja) * 2009-09-30 2011-04-14 Oki Electric Industry Co Ltd 半導体レーザ及びその高周波特性測定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230785B2 (ja) * 1993-11-11 2001-11-19 日本電信電話株式会社 半導体レーザおよびその製造方法
JP4155368B2 (ja) * 1998-03-19 2008-09-24 日本オプネクスト株式会社 半導体レーザアレイ素子
DE60215303D1 (de) * 2002-04-25 2006-11-23 Avalon Photonics Ag Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
US9065236B2 (en) * 2010-04-30 2015-06-23 Seagate Technology Method and apparatus for aligning a laser diode on a slider
US8406091B2 (en) * 2010-07-08 2013-03-26 Tdk Corporation Thermal assisted magnetic recording head having integral mounted of photo-detector and laser diode
MY161466A (en) * 2011-04-29 2017-04-14 Seagate Technology Llc Method and apparatus for aligning a laser diode on a slider

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001517866A (ja) * 1997-09-22 2001-10-09 クアンタム デバイシーズ， インコーポレイテッド 多波長半導体レーザアレイ装置（チップ）を製造および実装する技術、ならびにシステムアーキテクチャにおけるその応用
JP2000058965A (ja) * 1998-08-17 2000-02-25 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び半導体レーザ素子
US20020076187A1 (en) * 2000-08-21 2002-06-20 Agere Systems Optoelectronics Guardian Corp. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2006156947A (ja) * 2004-08-20 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2007027181A (ja) * 2005-07-12 2007-02-01 Sharp Corp 窒化物半導体レーザ装置
JP2011077221A (ja) * 2009-09-30 2011-04-14 Oki Electric Industry Co Ltd 半導体レーザ及びその高周波特性測定方法

Also Published As

Publication number Publication date
CN105144511A (zh) 2015-12-09
CN105144511B (zh) 2018-10-19
WO2014165039A1 (en) 2014-10-09
KR20150132386A (ko) 2015-11-25
KR101835877B1 (ko) 2018-03-07

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