CN105144511B - 具有布置在沟槽区内的阴极金属层的半导体激光器 - Google Patents

具有布置在沟槽区内的阴极金属层的半导体激光器 Download PDF

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Publication number
CN105144511B
CN105144511B CN201480022240.XA CN201480022240A CN105144511B CN 105144511 B CN105144511 B CN 105144511B CN 201480022240 A CN201480022240 A CN 201480022240A CN 105144511 B CN105144511 B CN 105144511B
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CN
China
Prior art keywords
junction
cathode
layer
laser diode
laser
Prior art date
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Active
Application number
CN201480022240.XA
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English (en)
Chinese (zh)
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CN105144511A (zh
Inventor
S·E·奥尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/802,239 external-priority patent/US8923357B2/en
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of CN105144511A publication Critical patent/CN105144511A/zh
Application granted granted Critical
Publication of CN105144511B publication Critical patent/CN105144511B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/105—Mounting of head within housing or assembling of head and housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Magnetic Heads (AREA)
  • Optical Head (AREA)
CN201480022240.XA 2013-03-13 2014-03-12 具有布置在沟槽区内的阴极金属层的半导体激光器 Active CN105144511B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/802,239 US8923357B2 (en) 2011-09-13 2013-03-13 Semiconductor laser with cathode metal layer disposed in trench region
US13/802,239 2013-03-13
PCT/US2014/024206 WO2014165039A1 (en) 2013-03-13 2014-03-12 Semiconductor laser with cathode metal layer disposed in trench region

Publications (2)

Publication Number Publication Date
CN105144511A CN105144511A (zh) 2015-12-09
CN105144511B true CN105144511B (zh) 2018-10-19

Family

ID=51659046

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480022240.XA Active CN105144511B (zh) 2013-03-13 2014-03-12 具有布置在沟槽区内的阴极金属层的半导体激光器

Country Status (4)

Country Link
JP (1) JP2016517632A (https=)
KR (1) KR101835877B1 (https=)
CN (1) CN105144511B (https=)
WO (1) WO2014165039A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4113104A3 (en) 2016-06-01 2023-02-22 Quantum-si Incorporated Integrated device for detecting and analyzing molecules
US12506321B2 (en) * 2021-06-16 2025-12-23 Western Digital Technologies, Inc. Vertical cavity surface emitting laser and head gimbal assembly
WO2024253683A1 (en) * 2022-04-11 2024-12-12 The University Of Chicago Quantum coherent devices using a thin film on si/soi platform

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230785B2 (ja) * 1993-11-11 2001-11-19 日本電信電話株式会社 半導体レーザおよびその製造方法
US20020028390A1 (en) * 1997-09-22 2002-03-07 Mohammad A. Mazed Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
JP4155368B2 (ja) * 1998-03-19 2008-09-24 日本オプネクスト株式会社 半導体レーザアレイ素子
JP3348024B2 (ja) * 1998-08-17 2002-11-20 松下電器産業株式会社 半導体レーザ装置
US6625367B2 (en) * 2000-08-21 2003-09-23 Triquint Technology Holding Co. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
DE60215303D1 (de) * 2002-04-25 2006-11-23 Avalon Photonics Ag Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
JP4409484B2 (ja) * 2004-08-20 2010-02-03 パナソニック株式会社 半導体発光装置
JP2007027181A (ja) * 2005-07-12 2007-02-01 Sharp Corp 窒化物半導体レーザ装置
JP2011077221A (ja) * 2009-09-30 2011-04-14 Oki Electric Industry Co Ltd 半導体レーザ及びその高周波特性測定方法
US9065236B2 (en) * 2010-04-30 2015-06-23 Seagate Technology Method and apparatus for aligning a laser diode on a slider
US8406091B2 (en) * 2010-07-08 2013-03-26 Tdk Corporation Thermal assisted magnetic recording head having integral mounted of photo-detector and laser diode
MY161466A (en) * 2011-04-29 2017-04-14 Seagate Technology Llc Method and apparatus for aligning a laser diode on a slider

Also Published As

Publication number Publication date
JP2016517632A (ja) 2016-06-16
CN105144511A (zh) 2015-12-09
WO2014165039A1 (en) 2014-10-09
KR20150132386A (ko) 2015-11-25
KR101835877B1 (ko) 2018-03-07

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