CN105144511B - Semiconductor laser with the cathode metal layer being arranged in trench area - Google Patents
Semiconductor laser with the cathode metal layer being arranged in trench area Download PDFInfo
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- CN105144511B CN105144511B CN201480022240.XA CN201480022240A CN105144511B CN 105144511 B CN105144511 B CN 105144511B CN 201480022240 A CN201480022240 A CN 201480022240A CN 105144511 B CN105144511 B CN 105144511B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/105—Mounting of head within housing or assembling of head and housing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Magnetic Heads (AREA)
- Optical Head (AREA)
Abstract
A kind of laser diode includes the knot layer of substrate and arrangement on substrate.Tie the Quantum Well that layer forms laser diode.Laser diode includes knot surface, which, which has, extends through knot layer at least one raceway groove of substrate.At least one channel definition anode region and cathodic region.Cathode electricity knot is disposed on the knot surface in cathodic region, and anode electricity knot is disposed on knot surface and is coupled to the knot layer of anode region.Cathode metal layer is disposed in at least trench area of raceway groove.Cathode metal layer couples substrate to cathode electricity knot.
Description
Invention content
Each embodiment described herein relates generally to the semiconductor used in the application of such as heat-assisted magnetic recording etc
Laser.In one embodiment, laser diode includes the knot layer of substrate and arrangement on substrate.It ties layer and forms two pole of laser
The Quantum Well of pipe.Laser diode includes knot surface, which, which has, extends through knot layer at least one raceway groove of substrate.
At least one channel definition anode region and cathodic region.Cathode electricity knot is disposed on the knot surface in cathodic region, and anode electricity knot quilt
It is arranged on the knot surface and is coupled to the knot layer of anode region.Cathode metal layer is disposed in at least trench area of raceway groove.It is cloudy
Pole metal layer couples substrate to cathode electricity knot.
In another embodiment, laser diode includes knot surface, and the knot surface has the laser along laser diode
Two long and narrow raceway grooves that outbound course extends.Knot surface includes：The anode being arranged in the anode region between two long and narrow raceway grooves
Electricity knot；And it is arranged in two or more cathode electricity knots in one or more cathodic regions outside anode region.Laser diode
Including the knot layer being arranged under knot surface.It ties layer and forms Quantum Well in anode region.Laser diode is included in the substrate under knot layer.
Long and narrow raceway groove extends through knot layer to substrate in trench area.Cathode metal layer extends into trench area.Cathode metal layer is by substrate coupling
It is bonded to two or more cathode electricity knots.
These and other feature and aspect of each embodiment can refer to following detailed description and drawings and understood.
Brief description
It discusses with reference to the accompanying drawings, wherein indicating portion similar in multiple figures/identical using same reference numerals
Part.
Figure 1A -1C are the stereograms of hard disk drive sliding part accoding to exemplary embodiment；
Fig. 2A and Fig. 2 B are the upward view and stereogram of the laser diode according to an exemplary embodiment respectively；
Fig. 3 A and Fig. 3 B are the cross-sectional views of laser diode accoding to exemplary embodiment；
Fig. 4 is the flow chart for showing process accoding to exemplary embodiment；
Fig. 5-Fig. 7 is the cross-sectional view for the laser diode for showing to be configured according to the cathode passage of each exemplary embodiment；
Fig. 8 is the flow chart for showing process according to another exemplary embodiment.
Specific implementation mode
This disclosure relates to the optical device used in the application of such as heat-assisted magnetic recording (HAMR) etc.HAMR equipment
Overcome superparamagnetic e ffect using heat, if not in this case, superparamagnetic e ffect may limit typical magnetic recording media (such as
Hard disk driver disk) data surface density.Record on this medium is related to the small portion to medium when being written by magnetic write head
Divide and is heated.Heat can be generated from the coherent source of such as laser diode etc.Optical device can be integrated into hard-drive
Device sliding part from laser diode guiding energy to medium.
A kind of method for obtaining small limited hot spot is to use light near field transducer (NFT), such as slide positioned at hard drives
Plasma optics antenna near the air loading surface of moving part or chamber.Light projects light from light source (such as laser diode)
In waveguide, the optical waveguide is structured in from sandwich layer and coating with different refractivity in sliding part.Waveguide may include
Height between sandwich layer and the respective indices of refraction of coating is comparative.The light propagated in the waveguide can be guided to collective optics, such as
Planar solid submerges mirror (PSIM), which can be pooled to energy in optics NFT.In other configurations, waveguide can incite somebody to action
Light is transferred to NFT without the use of concentrating element, i.e., directly transmits.
NFT can be formed in the integrated optical device in sliding part.The field of integrated optical device is associated with optical device
Construction on substrate, sometimes in combination with electronic device to generate functional system or subsystem.For example, light can be via using layer heavy
The integrated light guide that product technology is built on substrate transmits between device.These waveguides can be used the first material as sandwich layer shape
At the sandwich layer is surrounded by the second material as coating.Other optical devices can be formed in the same manner, including above-mentioned
NFT and PSIM.
In HAMR sliding parts, light is projected onto in these integrated optical devices, and the purpose is to be transmitted in recording process
Luminous energy is with heat medium.It is from free space via the light being fabricated in sliding part that light projection, which is entered a kind of mode of sliding part,
Grid coupler, this is referred to as free space optical transmission.Free space optical transmitting assembly is using the laser outside driving head
Device.The another way that luminous energy is provided for HAMR records is to be integrally formed/assemble laser light source (such as laser two with sliding part
Pole pipe).This configuration is referred to herein as in sliding part laser on laser or sliding part.It can be in wafer scale or sliding part grade
Laser optical component on laser and sliding part is built in sliding part in fabrication stage.
HAMR equipment may need a variety of optical devices being integrated into sliding part, together with the magnetic of such as read-write head etc
Optical device.In one configuration, in sliding part laser apparatus can by sliding part manufacturing process by individual laser two
Pole pipe device is assembled to sliding part and is formed.This may need to execute additional Integration Assembly And Checkout behaviour in sliding part manufacturing process
Make.May require these Integration Assembly And Checkouts operation accuracy and reliability to ensure the acceptable yield manufactured on a large scale.
The stereogram of Figure 1A is illustrated according to an example of laser apparatus 100 in the sliding part of an exemplary embodiment
In.In this embodiment, edge-emitting laser diodes 102 are integrated into the rear edge surface 104 of sliding part 100.Laser diode 102
It is integrated with HAMR read/write heads 106.One edge of read/write head 106 is located at the air loading surface 108 of sliding part 100.Air
Load-bearing surface 108 is maintained at during equipment operation near the (not shown) of move media surface.Laser diode 102 provides
Electromagnetic energy in medium close to the point heat medium surface near 106 position of read/write head.Such as the light of waveguide 110 etc
Coupled apparatus is formed in sliding part equipment 100 by integrally (such as being deposited via layer) light to be transferred to from laser 102
Medium.
In this embodiment, laser diode 102 is recessed in the cavity 112 in the rear surface 104 for being formed in sliding part 100.
The bottom of cavity 112 includes installation surface 113, and the installation surface 113 and the lower surface of laser diode 102 (are retouched below such as
The surface 202 stated) form interface.Installation surface 113 includes bump 114, the bump 114 and is formed in laser
Corresponding protuberance/disk on 102 forms interface.These bumps 114 are conducive to laser 102 being bonded to sliding part 110, are
Laser 102 provides electrical connection, and can provide other functions.For example, bump 114 can help to radiate to laser 102, really
The output facet 116 protected at the emission edge 117 of laser 102 and being correctly aligned for waveguide 110 etc..
In other configurations, top surface of the laser diode arrangement in sliding part of laser diode 102 can will be similar to that
On, such as on the surface opposite with air loading surface.Laser diode 102 can be directly connectcted to the disk at the top of sliding part,
Or it is attached via the intermediate structure for being referred to as base station.In any configuration, when the disk of laser diode 102 is engaged to sliding
When the cooperation disk of part or base station, the output facet of laser diode 102 is aligned with the waveguide coupler of sliding part.
In another configuration, laser light source is formed or is assembled on the outer surface of sliding part.It is this configuration herein by
Laser (LoS) referred to as on sliding part.Laser optical group on sliding part can be built in wafer scale or in the sliding part grade fabrication stage
Part.Referring now to Figure 1B, solid shows an example of laser apparatus 120 on sliding part accoding to exemplary embodiment
Son.Laser 120 includes upper and near the rear of sliding part ontology 121 124 laser diode on the top of sliding part ontology 121
122.Laser diode 122 provides electromagnetic energy with close to the point heat medium surface near HAMR read/write heads 126, read/write head
126 are located towards the surface 128 of medium.Towards the surface 128 of medium move media surface is maintained at during equipment works
Near (not shown).
Such as the LMDS Light Coupled Device of waveguide 130 etc be formed in sliding part ontology 121 with by light from laser
Device 122 is transferred to medium.For example, waveguide 130 and near field transducer (NFT) 132 can be located at read/write head 126 nearby to write behaviour
The local heating of medium is provided during work.In this embodiment, laser diode 122 can be edge-emission equipment, light by mirror or
Similar devices are reflected into waveguide 130.
In fig. 1 c, on the three-dimensional sliding part shown accoding to exemplary embodiment laser apparatus 140 another
Example.Sliding part 140 includes with the sliding part ontology 141 towards the surface 148 of medium and top surface 149.Towards Jie
The surface 148 of matter is maintained at during equipment operation near the (not shown) of move media surface.146, read/write head region
In the surface 148 towards medium close to the position of the rear 144 of sliding part ontology 141.Read/write head region 146 includes corresponding
Optical device (such as the near field that one or more reads energy converters and writes energy converter and be directed to small energy beam on dielectric surface
Energy converter).Energy is provided by the laser (such as laser diode) 142 for being coupled to base station 154, base station 154 and laser 142
It is all coupled to the top surface 149 of sliding part ontology 141.
Light is led to the optical interface of sliding part ontology 141 by laser diode 142, and (such as waveguide input coupler does not show
Go out), it is coupled to waveguide 150 there, and light is directed to read/write head regions 146 for the waveguide 150.Laser diode 142 exists
Edge-emitting laser diodes (edge firing laser diode) in the example, and can via facet, grating, lens or
Other coupled structures known in the art are coupled to waveguide 150.In general, sliding part ontology 141 be with waveguide 150 and/or
The integrated optical device that read/write head region 146 is formed together.
Laser diode 142 and base station 154 can also be used integrated optical device or integrated circuit fabrication process to be formed.So
And in this embodiment, laser diode 142 and base station 154 are not formed together with sliding part ontology 141, such as use identical layer
Depositing operation.Laser 142 and base station 154 are attached together to form cunning with sliding part ontology 141 after being individually formed simultaneously
Follower member 140.Base station 154 provides mechanical connection and electrical connection between laser diode 142 and sliding part ontology 141.It is sliding
Moving part ontology 141, laser diode 142 and base station 154 have electrical connection disk 156-158, these electrical connection disks 156-158 is provided
Electrical connection between HAMR sliding parts 140 and trace cardan universal joint component (not shown).
Fig. 2A, 2B show the more detailed figure of the special feature of the alignment of edge-emitting laser diodes 102.Specifically, Fig. 2A
It is the electricity for showing laser diode 102 for example shown in FIG. 1 and the upward view and stereogram of optical interface feature respectively with Fig. 2 B.
As previously mentioned, laser 102 includes the output facet 116 on transmitting terminal 117, which enters waveguide (example by light projection
Such as the waveguide 110 in Fig. 1) to be transferred to HAMR media.The knot surface 202 of laser 102 includes multiple solder plates 204, these
Solder plate 204 is configured to form interface with the bump (such as protuberance 114 in Fig. 1) in sliding part equipment 100.It is conductive
Surface (such as band) 206 is surrounded in either side by elongate channels 208.Conductive surface 206 can be conducive in engagement/refluxing stage
Anode (or cathode) side of laser 102 is electrically coupled to sliding part.When being bonded to sliding part, conductive surface
206 also act as radiator.
In addition test panel 210,212 is shown in Fig. 2A and Fig. 2 B.These test panels 210,212 are also in 204 and of solder plate
206 side of band is located on lower surface 202, and the anode and cathode layer that can be correspondingly coupled in laser diode 102.Generally
For, test panel 210,212 is conducive to the automatic test of laser 102, without damaging solder plate 204 and/or band 206
It is dangerous.
The semiconductor laser of test such as laser diode 102 may need anode from test circuit to laser and
The electrical connection of cathode terminal.In the design of typical semiconductor laser, knot side is metallized to provide terminal (such as anode
End), and the substrate side of laser is metallized to provide another terminal (such as cathode terminal).These knots are matched in such a manner
It sets：Formation when mounted is electrically coupled with sliding part.In illustrative example, cathode and anode knot are respectively configured to solder plate
204 and center strip 206.
In order to test this configuration, test probe can be made to be contacted with knot 204,206 laser 102 is electrically coupled to test
Circuit.However, for certain semiconductor laser designs, it may be undesirable to carry out test using coupling feature 204,206.
For example, can design drawing 2A-2B and knot shown in Fig. 3 204,206 design (together with the associated interface feature of sliding part) to return
Make laser 102 physically in alignment with sliding part in stream operating process, such as in response to by the way that laser 102 is bonded to sliding
The surface tension that the reflux solder of part applies.As a result, solder plate 204 and band 206 can realize laser 102 be electrically coupled and object
Both reason couplings, and being correctly aligned in the coupling process can further rely on solder plate 204 and band 206 will not be because of
The test and/or disposition of laser 102 and damage (such as rise dent, scrape).
In the semiconductor laser design and its equivalent arrangements of diagram, it is of coupled connections (such as solder plate 204 with sliding part
With band 206) any contact may damage laser 102 and/or cause misalignment in laser-sliding part assembling process
Problem.It is tested without using these knots 204,206, test probe can pass through engaged test disk 210,212 electrical testing lasers
102.This is conducive to electrical testing without the direct physical contact by testing probe and laser stripes band 206 and solder plate.
Test panel 210,212 can only be intended for being used as probe location dduring test, and need not for example be connect via solder physics
It is bonded to sliding part 100.
As shown, test panel 210,212 is together with 204,206 knots for being disposed in semiconductor laser that are of coupled connections
On surface 202.Laser 102 can be made to be easily manufactured with 204, the 206 this co-location of being of coupled connections on surface 202.
Position of the test panel 210,212 on surface 202 also can make test panel 210,212 not after laser is assembled to sliding part
May have access to, for example, lower surface 202 after laser placement towards corresponding surface 113.It is assumed, however, that laser 102 is engaged
Solder reflux to sliding part 100 is successful, and there may be contribute to testing laser device 102 on sliding part 100
Thus other contact points no longer need the access to test panel 210,212.
Referring now to Fig. 3 A, the cross-sectional view of semiconductor laser corresponding with section 3A-3A shown in Fig. 2A 102 is shown
Additional detail accoding to exemplary embodiment.As shown, knot layer/multiple knots layer 302 is covered in the top of substrate 304.Tie layer
302 form the Quantum Well of laser 102.Top and bottom cathode metal layer 306,308 is in electrical contact with substrate 304.Top cathode
Layer 306 can be used to form solder plate 204, and may pass through conductive substrates 304 and/or be electrically coupled to by available access 307
Bottom cathode layer 308.Cathode metal layer 306 keeps being isolated with knot layer 302 by insulating layer 310.314 covered cathode layer of separation layer
306, and may include access (such as access 315), solder plate (such as solder plate shown in Fig. 2A -2B is formed by the access
204).In left-hand side, access 317 couples test panel 212 to cathode layer.
In the right-hand side of Fig. 3 A, separation layer 314 is illustrated as being connected the covering of band 313, and the connection strap band 313 is golden by anode
Belong to one of layer 312 and aforementioned test panel 210 to couple.Anode metal layer 312 extends along the center of laser 102, and and semiconductor
Layer/Quantum Well 302 is in electrical contact.Anode layer 312 can be a part for band 206 shown in Fig. 2A -2B.In the left-hand side of Fig. 3 A
Can there are corresponding test panel (not shown), the test panel for example to be formed by so that layer 306 is exposed through separation layer 314, and/
Or formed by the extra play on 314 top of separation layer, the extra play is for example using vias couple to layer 306.
306 layers of top anode 312 and cathode are roughly arranged near the top surface of Fig. 3 A, which generally may be used
Corresponding to surface 202 shown in Fig. 2A and Fig. 2 B.Since these layers 306,312 are already close to top surface, test panel 210,
212 may be formed on or near same surface 202.For example, access (for example, being similar to access 315) or similar perforation can be used
Layer 314 is to couple test panel on the layer 306 on figure left-hand side.Test panel can be formed so that they compare such as solder plate or item
It is coplanar or recessed with 206 other engagement/alignment characteristics.It can ensure that test panel later not with this relative altitude arrangement test panel
It can interference laser alignment.
For example, referring again to Fig. 2 B, band 206 can apparent surface 202 plane it is higher more prominent than solder plate 204.This
A little differences in height can be considered in an assembling process, such as by forming corresponding feature on sliding part 100 and/or by cunning
Bump/the feature being formed in a suitably dimensioned on moving part 100 is to take into account difference in height.In this case, test panel
210,212 can be arranged to it is substantially coplanar with solder plate 204.In converse configuration (such as solder plate 204 is relative to surface plane
It is higher more raised than band 206), test panel 210,212 can substantially with band 206 it is coplanar arrange.In solder plate 204 and band
In the case of 206 is substantially coplanar, test panel 210,212 also can or apparent surface 202 coplanar with solder plate 204 and band 206
Plane be in than 206 lower height of solder plate 204 or band.
By 202 it is described as " surface " before it will be understood that and not necessarily requires surface 202 being flat.Although surface 202 can have
It is useful for disposing the common plane of certain (or even most) features, however certain features can be non-coplanar simultaneously with other feature
Be still considered as be surface 202 a part.In general, surface 202 is at least intended to indicate the three-dimensional machinery of laser 102 and connects
Mouthful, for being coupled to sliding part 100 or other optical electrical components.For example, such as etching, chemical-mechanical polishing/plane can be used
The techniques such as change, to change the height of certain features with respect to other feature on surface 202.Therefore, the member being disposed on surface 202
The description of part is not intended to require the element and other elements for being equally arranged on surface 202 coplanar.
In figure 3b, section view illustrates the alternative configuration of the test disc layer of laser diode 102A.In this embodiment, test panel
210,212 can apparent surface 202 other feature it is recessed.The cross section of Fig. 3 B, test panel 210,212 is taken to be located therein.Except
Position other than position shown in Fig. 3 B, anode and cathode layer 312,306 can be substantially similar in this configuration shown in Fig. 3 A
Anode and cathode layer (although not having connection strap band 313 and test panel 210 in these positions).In the position, separation layer 314 is on a left side
Hand side can be truncated/be shortened to expose a part for cathode layer 306, and test panel 212 is consequently formed.In right-hand side (in raceway groove
Bottom), both cathode layer 306 and separation layer 314 are truncated/shorten.Connection strap band 313 and test panel 210 are covered in accordingly
The top of separation layer 314 and insulating layer 310.In this way, test panel 210,212 relative to surface 202 than cathode layer 306 or separation layer
Any of 314 is lower, and the cathode layer 306 or separation layer 314 can correspond respectively to band 206 and disk as shown in Figure 2
204 apparent height.
As shown in Figure 3B, cathode layer 306 couples directly to substrate 304 in trench area 306A, and without using access (example
The access 307 being such as similar in Fig. 3 A).Top cathode layer 306 and anode layer 312 allow to make anode and the moon from knot surface 202
Pole is electrically connected.In this case, it may not be necessary to the bottom cathode layer of layer 308 shown in such as Fig. 3 A.In some cases, such as
Fruit requires not only for same laser diode to be used for laser configurations in sliding part shown in figure 1A but also be used for shown in Figure 1B or Fig. 1 C
Sliding part on laser configurations.It may include top and bottom cathode layer 306, one or both of 308 and be used for them
Couple substrate 304 to the cathode electrical connection of device.
Referring now to Fig. 4, flow illustrates the process of assembling integrated optical device sliding part accoding to exemplary embodiment
402.Process 402 is related to forming the knot surface of 404 laser diodes.Knot surface includes：A) cathode and anode electricity knot；And it is b) electric
It is coupled at least one test panel of one of cathode electricity knot and anode electricity knot.Via being applied at least one test panel
Test 406 laser diode of probe test.During testing 406, probe not Contact cathod and anode electricity knot are tested.
Test 406 can relate to known in the art any electrically or optically test.For example, testing laser diode can relate to driving
Testing current laser output power, output beam diverging, Laser emission are composed, for the laser diode both sides of given driving current
Voltage and filter out one or more of the aging characteristics of early stage life failure before assembling.It can be (such as brilliant in component
Piece, crystal bar) in batches execute test and/or test can be executed on each laser diode.If it is determined that 407 test not at
Work(, then laser can be disposed off 409 (for example, if a part for serious testing is then labeled as failure, thus it will not be in group
It is used further during dress).
If be successfully tested, method is further to the phase in cathode, anode electricity knot and integrated optics slide
408 solders are flowed back between should tying so that laser diode is bonded to integrated optical device sliding part.This can be happened at laser two
After pole pipe is arranged in sliding part, such as laser is arranged in the cavity of sliding part, the cavity is conducive between the two
Alignment.This arrangement may make test panel (it can be located on the lower surface of sliding part) to be disposed in knot surface and integrated light
Between the respective surfaces for learning devices slippery part.During reflux 408, test panel is not bonded to integrated optical device by solder
Sliding part.As a result, if test panel is for example damaged due to test, impaired test panel does not influence laser diode and collection
At optics slide alignment.
Referring again to Fig. 3 B, laser diode 102A includes the trench area 306A of top cathode layer 306, trench area 306A
Couple substrate 304 to knot surface 202.Trench area 306A eliminates use and marches to knot table from substrate 304 on the outside of diode
The needs of the wire bonding (such as gold thread) in face 202.If wire bonding is used in laser assembly, wire bonding may increase
Add manufacturing cost, and may need on the surface 202 of coupling line on it or stretch out the additional disk on the surface 202.Due to wanting
Ask laser diode 102A sizes small, therefore no sufficient space is including volume that is on matching surface or being stretched out from laser
External disk.In addition, due to the high inductance of the line used in bonding, wire bonding may also influence laser performance.
Aforementioned top cathode layer 306 can be saved is electrically coupled to sliding part or the lead of other devices by laser diode 102
The demand of bonding.Top cathode layer 306 allows relatively low inductance trace to be fabricated on knot surface 202, and allows smaller knot table
Face 202.Due to anode and cathode connection in laser 102 same surface 202 on, top cathode layer 306 also be conducive to via
Laser 102 is attached to sliding part (or other devices) by relatively inexpensive flip-chip bond.Include selectively that bottom is cloudy
Pole layer (such as bottom cathode layer 308 in Fig. 3 A) with provide substitute tie point, such as on sliding part laser configurations,
Heat dissipation etc..
Referring now to Fig. 5 and Fig. 6, cross-sectional view shows the configuration in cathode groove area according to various embodiments.Fig. 5 and figure
Diagram in 6 generally corresponds to the cross section near the trench area of cathode layer, for example, by the cutting line 5-5 instructions in Fig. 3 B that
Sample.In fig. 5 and fig., arrow 502,602 defines laser outbound course, such as light from the direction that laser projects.In Fig. 5
In, laser diode 500 includes the elongate trench area 504 extended substantially from emitting edge 506 to opposite edges 508.For this
For example, " basic " may include extending to from half to whole distances between emitting edge 506 and opposite edges 508 any
The continuous path part of position.Trench area 504 is disposed in trench bottom (for example, raceway groove 208 in Fig. 2), which surrounds
Laser stripes zone 510, the laser stripes zone 510 are similar to the laser stripes zone 206 of laser 102 shown in Fig. 2.
Alternative path, which configures, to be shown for the laser diode 600 in Fig. 6.The laser diode 600 includes multiple wider
Trench area 604, these wider trench areas 604 are between emitting edge 606 and opposite edges 608 along length arrangement.Trench area 604
It is disposed in the either side of laser stripes zone 610.Trench area 604 has essentially identical size and shape, although each ditch
The size or shape in slot area 604 are changeable.
Referring now to Fig. 7, the cross-sectional view of semiconductor laser diode 702 shows replacing according to additional exemplary embodiment
It is configured for trench area.In the figure, laser diode 702 has the raceway groove for increasing the surface area at trench area 711a, 711b
Two alternative configurations of 726a, 726b.Cathode electricity knot 704a, 704b and anode electricity knot 706 are disposed in laser diode 702
It ties on surface 708.Cathode electricity knot 704a, 704b can be configured as multiple conductive plates (such as round or long and narrow bump),
These conductive plates are coupled to top cathode metal layer 710a, 710b.Trench area 711a, 711b by top cathode metal layer 710a,
710b is electrically coupled to substrate 716.
Knot layer 718 is covered on the top of substrate 716.Tie the Quantum Well that layer 718 forms laser diode 702.Anode electricity
Knot 706 is coupled to the top of knot layer 718 by anode metal layer 720.Although for convenience that these and other layer is (such as cloudy
Pole metal layer) it is described as " metal " layer, however it will be understood by those skilled in the art that can be used nonmetallic materials next cambial
All or part of, so that layer still provides being electrically coupled as described.
(such as in Fig. 2 B) as previously shown, anode electricity knot 706 can be formed the length (example along laser diode 702
Such as along laser outbound course) advance narrow band.In other configurations, anode electricity knot 706 can be similar to cathode electricity knot 704
Including two or more disks.These disks can be coupled to anode metal layer 720 along the length of laser diode 702.Anode electricity knot
706 arrange along anode region 730, and the anode region 730 is overall to define Laser emission band.Cathodic region 732a, 732b are in cathodic metal
Under layer 710a, 710b.In general, area 730,732a, 732b are divided, wherein raceway groove 726a, 726b and wear knot layer 718.
Cathode metal layer 710a, 710b keep being isolated with knot layer 718 by one or more insulating layers 722.Separation layer 724
Covered cathode metal layer 710a, 710b, in addition to cathode disc 704a, 704b protrusion is with the position of Contact cathod metal layer 710a, 710b
It sets.Separation layer 724 extends to anode electricity knot 706 and can also be electrically isolated some parts of anode metal layer 720.Cathode metal layer
710 are combined in the bottom by tying raceway groove 726a, 726b that layer 718 extends to substrate 716 with trench area 711a, 711b.Raceway groove
726a, 726b are along the either side that laser outbound course is disposed in anode electricity knot 706 (such as similar to the raceway groove in Fig. 2 B
208)。
Raceway groove 726a, 726b include exemplary geometric feature, the geometric properties be conducive to expand trench portions 711a, 711b with
Improve the performance of laser diode 702.Raceway groove 726a can be basic with preceding example (for example, see Fig. 3 B) therewith in channel top
Identical width, but there is steeper side wall angle.Due to steep angle, more have challenge may be the side-wall metallic for making raceway groove 726a
Change.However, steep angle expands trench portions 711a, while leaving on tying surface 708 for two rows cathode disc 704a enough
Space.
Raceway groove 726b is including the identical side wall angle of preceding example (such as seeing Fig. 3 B) therewith and has broader channel width.This
Be conducive to being more easily manufactured for cathode layer 710b, but may be that cathode disc 704b reserves less space.In this embodiment, cathode disc
It is extended compared to disk 704a to compensate and ensure disk 707a with such as the thermal transport property of sufficiently low resistance, requirement.It will
Understand, particular laser diode may include symmetrically or asymmetrically be arranged in around anode region 730 two channel arrangements
Any one of 726a, 726b.In other arrangements, laser diode can only include raceway groove 726a, a 726b, be formed
Single cathodic region 732a, the 732b being arranged side by side with anode region 730.
Laser diode 702 may also comprise the bottom cathode being disposed on the surface opposite with surface 708 is tied of substrate 716
Layer (not shown).For example, with reference to the bottom cathode layer 308 in Fig. 3 A.Bottom cathode layer provides the replacement thermocouple with substrate 716
It closes.This is advantageously possible for the installation substituted configuration, such as in sliding part shown in figure 1A shown in laser and Figure 1B and Fig. 1 C
Laser on sliding part.
Referring now to Fig. 8, flow illustrates the method for being used to form laser diode accoding to exemplary embodiment, such as schemes
Shown in 3B and/or Fig. 8.This method is related to forming 800 laser-substrates.It ties layer and is deposited 802 to substrate.It ties layer and forms laser
The Quantum Well of diode, for example, it is downward from the center of laser diode along laser outbound course.One or more raceway grooves are along sharp
Light device outbound course is formed 806 in tying layer.The bottom of one or more raceway grooves extends through knot layer until substrate.
This method further relates to deposit 806 insulating layers on knot layer, and removes 808 1 in the bottom of one or more raceway grooves
A part for insulating layer in a or multiple trench areas.Cathode metal layer is formed 810 on insulating layer.Cathode metal layer is carried on the back
From Quantum Well from one or more trench areas, (cathode metal layer is coupled to substrate there) extends to cathodic region.Anode metal
Layer is formed 812 on insulating layer and is electrically coupled to the anode part of knot layer, for example, if using two or more raceway grooves
Then between two raceway grooves.Separation layer is formed 814 on cathode metal layer.Separation layer includes the one of wherein cathode metal layer
A little regions being partly exposed.816 one or more cathode electricity knots are formed so that these knots are coupled to the dew of cathode metal layer
Go out part.818 one or more anode electricity knots are formed, so that these knots are coupled to anode metal layer.
It will be understood that, method shown in Fig. 8 only for illustrate, and by the inspiration of above-mentioned teaching can there are many variation.Example
Such as, sequence that can be different from diagram executes operation.In addition, according to the final configuration of laser diode, some operations can be
It selects.For example, separation layer can be selected, or there are different configurations.In another variants, it can be used more or fewer
Raceway groove and/or access.
Description of the front to exemplary embodiment is given in order to explain and describe purpose.It is not intended to exhaustive or incite somebody to action this
Invention is limited to disclosed precise forms.According to above-mentioned teaching, many modifications and variations are possible.Disclosed embodiment
Any feature or all features can apply separately or in any combination, it is not intended to be construed as limiting, but pure illustrative
's.It is intended to that the scope of the present disclosure is made not limited by the detailed description, but is determined by the appended claims.
Claims (20)
1. a kind of laser diode, including：
Substrate；
The knot layer of arrangement over the substrate, the knot layer form the Quantum Well of laser diode；
Tie surface, it is described knot surface have extend through it is described knot layer until the substrate at least one raceway groove, it is described at least
One channel definition anode region and cathodic region；
Cathode electricity knot is disposed on the knot surface in the cathodic region；Anode electricity knot is disposed in the knot surface
Go up and be coupled to the knot layer of the anode region；And
Cathode metal layer is disposed in at least trench area of at least one raceway groove, and the trench area is along the laser
The laser outbound course of diode extends, and the cathode metal layer couples the substrate to the cathode electricity knot.
2. laser diode as described in claim 1, which is characterized in that the trench area along emitting edge and opposite edges it
Between extend, extended distance is the half of the distance between the emitting edge and described opposite edges to whole.
3. laser diode as described in claim 1, which is characterized in that the trench area includes being disposed in the substrate
The first and second trench areas on corresponding first and second half portion.
4. laser diode as described in claim 1, which is characterized in that at least one raceway groove is along the laser diode
Laser outbound course extend.
5. laser diode as described in claim 1, which is characterized in that at least one raceway groove includes two raceway grooves,
Described in anode region be disposed between described two raceway grooves.
6. laser diode as claimed in claim 5, which is characterized in that the cathodic region includes two cathodic regions, described
There are one cathodic regions on every side of anode region.
7. laser diode as claimed in claim 6, which is characterized in that the cathode electricity knot is included in described two cathodic regions
On more than first and second a bumps.
8. laser diode as described in claim 1, which is characterized in that the cathode electricity knot includes multiple bumps.
9. laser diode as described in claim 1 further includes being disposed in the substrate table opposite with the knot surface
Bottom cathode layer on face, the bottom cathode layer offer are electrically coupled with the replacement of the substrate.
10. laser diode as described in claim 1 further includes being disposed between the knot layer and the cathode metal layer
Insulating layer, the insulating layer makes the insulation of the cathode metal layer and the knot layer.
11. laser diode as described in claim 1, which is characterized in that the cathode electricity knot and the anode electricity knot by with
It is set to the installation surface for being electrically coupled to magnetic hard drives sliding part.
12. a kind of laser diode, including：
Tie surface comprising：
The two long and narrow raceway grooves extended along the laser outbound course of the laser diode；
The anode electricity knot being disposed in the anode region between described two long and narrow raceway grooves；And
Two or more cathode electricity knots being disposed in one or more cathodic regions except the anode region；
The knot layer being disposed in below the knot surface, the knot layer form Quantum Well in the anode region；
Substrate below the knot layer, wherein the long and narrow raceway groove extends through the knot layer until the lining in trench area
Bottom, the trench area extend along the laser outbound course of the laser diode；And
The cathode metal layer of the trench area is extended into, the cathode metal layer couples the substrate to described two or more
A cathode electricity knot.
13. laser diode as claimed in claim 12, which is characterized in that the trench area is along emitting edge and opposite edges
Between extend, extended distance is the half of the distance between the emitting edge and described opposite edges to whole.
14. laser diode as claimed in claim 12, which is characterized in that the trench area includes being disposed in the substrate
Corresponding first and second half portion on the first and second trench areas.
15. laser diode as claimed in claim 12, which is characterized in that the cathode electricity knot includes multiple bumps.
16. laser diode as claimed in claim 12, further include be disposed in the knot layer and the cathode metal layer it
Between insulating layer, the insulating layer makes the insulation of the cathode metal layer and the knot layer.
17. laser diode as claimed in claim 12, which is characterized in that the cathode electricity knot and the anode electricity knot by with
It is set to the installation surface for being electrically coupled to magnetic hard drives sliding part.
18. a kind of method being used to form laser diode, including：
Form laser-substrate；
Knot layer is deposited in the laser-substrate, the knot layer forms the Quantum Well of laser diode；
One or more raceway grooves are formed by the knot layer along laser outbound course, the bottom of one or more of raceway grooves extends
To the laser-substrate；
By insulating layer deposition on the knot layer；
A part for insulating layer in the one or more trench areas of the bottom of one or more of raceway grooves removal, it is one
Or multiple trench areas extend along the laser outbound course；
Cathode metal layer is formed on the insulating layer, the cathode metal layer is coupled in one or more of trench areas
The laser-substrate；And
The one or more cathode electricity knots for being coupled to the cathode metal layer are formed, one or more of cathode electricity knots are in institute
Expose on the knot surface for stating laser diode.
19. method as claimed in claim 18 further includes forming separation layer on the cathode metal layer, the separation layer
The region that some parts including the wherein described cathode metal layer are exposed, the cathode electricity knot be formed on the region it
On.
20. method as claimed in claim 18, further includes：
The second part of the insulating layer is removed in anode region so that the knot layer exposes；And
At the anode region anode metal layer is formed on the knot layer；And
Form the one or more anode electricity knots for being coupled to the anode metal layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/802,239 | 2013-03-13 | ||
| US13/802,239 US8923357B2 (en) | 2011-09-13 | 2013-03-13 | Semiconductor laser with cathode metal layer disposed in trench region |
| PCT/US2014/024206 WO2014165039A1 (en) | 2013-03-13 | 2014-03-12 | Semiconductor laser with cathode metal layer disposed in trench region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105144511A CN105144511A (en) | 2015-12-09 |
| CN105144511B true CN105144511B (en) | 2018-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480022240.XA Active CN105144511B (en) | 2013-03-13 | 2014-03-12 | Semiconductor laser with the cathode metal layer being arranged in trench area |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016517632A (en) |
| KR (1) | KR101835877B1 (en) |
| CN (1) | CN105144511B (en) |
| WO (1) | WO2014165039A1 (en) |
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| CN114674788A (en) * | 2016-06-01 | 2022-06-28 | 宽腾矽公司 | Integrated device for detecting and analyzing molecules |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3230785B2 (en) * | 1993-11-11 | 2001-11-19 | 日本電信電話株式会社 | Semiconductor laser and method of manufacturing the same |
| US20020028390A1 (en) * | 1997-09-22 | 2002-03-07 | Mohammad A. Mazed | Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures |
| JP4155368B2 (en) * | 1998-03-19 | 2008-09-24 | 日本オプネクスト株式会社 | Semiconductor laser array element |
| JP3348024B2 (en) * | 1998-08-17 | 2002-11-20 | 松下電器産業株式会社 | Semiconductor laser device |
| US6625367B2 (en) * | 2000-08-21 | 2003-09-23 | Triquint Technology Holding Co. | Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor |
| JP2003264334A (en) * | 2002-03-08 | 2003-09-19 | Hitachi Ltd | Semiconductor laser device and semiconductor laser module |
| DE60215303D1 (en) * | 2002-04-25 | 2006-11-23 | Avalon Photonics Ag | High speed vertical cavity resonator surface emitting laser (VCSEL) with low parasitic capacitance |
| JP2004014943A (en) * | 2002-06-10 | 2004-01-15 | Sony Corp | Multibeam semiconductor laser, semiconductor light emitting device, and semiconductor device |
| JP4409484B2 (en) * | 2004-08-20 | 2010-02-03 | パナソニック株式会社 | Semiconductor light emitting device |
| JP2007027181A (en) * | 2005-07-12 | 2007-02-01 | Sharp Corp | Nitride semiconductor laser apparatus |
| JP2011077221A (en) * | 2009-09-30 | 2011-04-14 | Oki Electric Industry Co Ltd | Semiconductor laser and high-frequency characteristic measuring method thereof |
| US9065236B2 (en) * | 2010-04-30 | 2015-06-23 | Seagate Technology | Method and apparatus for aligning a laser diode on a slider |
| US8406091B2 (en) * | 2010-07-08 | 2013-03-26 | Tdk Corporation | Thermal assisted magnetic recording head having integral mounted of photo-detector and laser diode |
| MY161466A (en) * | 2011-04-29 | 2017-04-14 | Seagate Technology Llc | Method and apparatus for aligning a laser diode on a slider |
-
2014
- 2014-03-12 JP JP2016501438A patent/JP2016517632A/en active Pending
- 2014-03-12 WO PCT/US2014/024206 patent/WO2014165039A1/en active Application Filing
- 2014-03-12 CN CN201480022240.XA patent/CN105144511B/en active Active
- 2014-03-12 KR KR1020157029129A patent/KR101835877B1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CN105144511A (en) | 2015-12-09 |
| KR101835877B1 (en) | 2018-03-07 |
| WO2014165039A1 (en) | 2014-10-09 |
| KR20150132386A (en) | 2015-11-25 |
| JP2016517632A (en) | 2016-06-16 |
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