CN105144511A - Semiconductor laser with cathode metal layer disposed in trench region - Google Patents

Semiconductor laser with cathode metal layer disposed in trench region Download PDF

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Publication number
CN105144511A
CN105144511A CN201480022240.XA CN201480022240A CN105144511A CN 105144511 A CN105144511 A CN 105144511A CN 201480022240 A CN201480022240 A CN 201480022240A CN 105144511 A CN105144511 A CN 105144511A
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China
Prior art keywords
knot
laser
layer
laser diode
substrate
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CN201480022240.XA
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Chinese (zh)
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CN105144511B (en
Inventor
S·E·奥尔森
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Seagate Technology LLC
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Seagate Technology LLC
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Priority claimed from US13/802,239 external-priority patent/US8923357B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • H01S5/0021Degradation or life time measurements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10Structure or manufacture of housings or shields for heads
    • G11B5/105Mounting of head within housing or assembling of head and housing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002Special dispositions or recording techniques
    • G11B2005/0005Arrangements, methods or circuits
    • G11B2005/0021Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/17Semiconductor lasers comprising special layers
    • H01S2301/176Specific passivation layers on surfaces other than the emission facet
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Magnetic Heads (AREA)
  • Optical Head (AREA)

Abstract

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Description

There is the semiconductor laser of the cathode metal layer be arranged in trench area
Summary of the invention
Each embodiment described herein relates generally to the semiconductor laser used in the application of such as HAMR and so on.In one embodiment, laser diode comprises substrate and is arranged in the knot layer on substrate.Knot layer forms the quantum well of laser diode.Laser diode comprises knot surface, and this knot surface has to extend through ties layer at least one raceway groove to substrate.At least one channel definition anode region and cathodic region.On the surface, and anode electricity knot is disposed in this knot on the surface and be coupled to the knot layer of anode region to the knot that cathodic electricity knot is disposed in cathodic region.Cathode metal layer is disposed at least trench area of raceway groove.Substrate coupling is tied to cathodic electricity by cathode metal layer.
In another embodiment, laser diode comprises knot surface, and described knot surface has two long and narrow raceway grooves that the Laser output direction along laser diode extends.Knot surface comprises: be arranged in the anode electricity knot in the anode region between two long and narrow raceway grooves; And two or more cathodic electricities knot in the one or more cathodic regions being arranged in outside anode region.Laser diode comprises being arranged in ties subsurface knot layer.Knot layer forms quantum well in anode region.Laser diode is included in the substrate under knot layer.Long and narrow raceway groove extends through knot layer to substrate in trench area.Cathode metal layer extends into trench area.Substrate coupling is tied to two or more cathodic electricities by cathode metal layer.
These and other characteristic sum aspect of each embodiment can refer to detailed description below and accompanying drawing is understood.
Accompanying drawing is sketched
Discuss with reference to the accompanying drawings, wherein use same reference numerals to represent similar in multiple figure/identical parts.
Figure 1A-1C is the stereogram of the hard disk drive sliding part according to exemplary embodiment;
Fig. 2 A and Fig. 2 B is upward view according to the laser diode of an exemplary embodiment and stereogram respectively;
Fig. 3 A and Fig. 3 B is the cross-sectional view of the laser diode according to exemplary embodiment;
Fig. 4 is the flow chart of the process illustrated according to exemplary embodiment;
Fig. 5-Fig. 7 is the cross-sectional view that the laser diode configured according to the cathode passage of each exemplary embodiment is shown;
Fig. 8 is the flow chart of the process illustrated according to another exemplary embodiment.
Embodiment
The disclosure relates to the optics used in the application of such as HAMR (HAMR) and so on.HAMR equipment use heat overcomes superparamagnetic e ffect, if not like this, superparamagnetic e ffect may limit the data surface density of typical magnetic recording media (such as hard disk driver dish).Record on this medium is related to and heating the sub-fraction of medium when being write by magnetic write head.Heat can produce from the coherent source of such as laser diode and so on.Optics can be integrated into hard drives sliding part so that energy is guided to medium from laser diode.
A kind of method obtaining small limited focus makes with light near field transducer (NFT), such as, plasma optics antenna near the air loading surface being positioned at hard drives sliding part or chamber.Light projects fiber waveguide from light source (such as laser diode), and described fiber waveguide is structured in sliding part from having the sandwich layer of different refractivity and coating.The height that waveguide can be included between sandwich layer and the respective indices of refraction of coating is comparative.The light propagated in the waveguide can be directed to collective optics, such as planar solid submergence mirror (PSIM), and energy can be pooled in optics NFT by this collective optics.In other configuration, light can be passed to NFT and not use concentrating element by waveguide, namely directly transmits.
NFT can be formed in the integrated optical device in sliding part.The field of integrated optical device is associated with the structure of optical device on substrate, sometimes in conjunction with electronic device to produce functional system or subsystem.Such as, light can transmit between device via the integrated light guide using layer deposition techniques to build on substrate.These waveguides can use the first material to be formed as sandwich layer, described sandwich layer by as coating the second material around.Other optics can be formed in the same manner, comprises aforesaid NFT and PSIM.
In HAMR sliding part, light is projected onto in these integrated optical devices, its objective is to transmit luminous energy with heat medium in recording process.A kind of mode light being projected sliding part is from free space via the grating coupler be fabricated in sliding part, and this is called as free space optical transmission.Free space optical transmitting assembly can utilize the laser being positioned at driving head outside.For HAMR record provides the another kind of mode of luminous energy to be form/assemble LASER Light Source (such as laser diode) with sliding part.This being configured in is called as laser on sliding part inner laser device or sliding part here.At wafer scale or laser optical assembly on sliding part inner laser device and sliding part in the sliding part level fabrication stage, can be built.
HAMR equipment may need multiple optical device to be integrated in sliding part, together with such as reading-and the magnetic-optic devices of writing head and so on.In one configuration, sliding part inner laser device equipment is formed by independent laser diode device being assembled to sliding part in sliding part manufacture process.This may need in sliding part manufacture process, perform extra Integration Assembly And Checkout operation.May require that the accuracy that these Integration Assembly And Checkouts operate and reliability are to guarantee the extensive acceptable yield manufactured.
An example according to the sliding part inner laser device equipment 100 of an exemplary embodiment is illustrated in the stereogram of Figure 1A.In this embodiment, edge-emitting laser diodes 102 is integrated into the rear edge surface 104 of sliding part 100.Laser diode 102 is integrated with HAMR read/write head 106.An edge of read/write head 106 is positioned at the air loading surface 108 of sliding part 100.Air loading surface 108 is maintained near the (not shown) of move media surface in equipment operating process.Laser diode 102 provides electromagnetic energy with surperficial close to the some heat medium near read/write head 106 position at medium.By integratedly, (such as via layer deposition) is formed in sliding part equipment 100 so that light is passed to medium from laser 102 Light Coupled Device of such as waveguide 110 and so on.
In this embodiment, laser diode 102 is recessed in the cavity 112 that is formed in the rear surface 104 of sliding part 100.The bottom of cavity 112 comprises mounting surface 113, and this mounting surface 113 forms interface with the lower surface (such as described below surperficial 202) of laser diode 102.Mounting surface 113 comprises bump 114, and this bump 114 forms interface to the corresponding protuberance/dish be formed on laser 102.These bumps 114 are conducive to laser 102 to be engaged to sliding part 110, for laser 102 provides electrical connection, and can provide other function.Such as, bump 114 can help to dispel the heat to laser 102, guarantees to aim at etc. with the correct of waveguide 110 in the output facet 116 at emission edge 117 place of laser 102.
In other configuration, can will be similar to the laser diode arrangement of laser diode 102 on the top surface of sliding part, such as, on relative with air loading surface surface.Laser diode 102 directly can join the dish on sliding part top to, or is attached via the intermediate structure being called as base station.In arbitrary configuration, when the dish of laser diode 102 is engaged to the cooperation dish of sliding part or base station, the output facet of laser diode 102 is aimed at the waveguide coupler of sliding part.
In another configuration, LASER Light Source is formed or is assembled on the outer surface of sliding part.This being configured in is called as laser on sliding part (LoS) here.At wafer scale or laser optical assembly on sliding part in the sliding part level fabrication stage, can be built.Referring now to Figure 1B, stereogram shows an example of laser apparatus 120 on the sliding part according to exemplary embodiment.Laser 120 is included in sliding part body 121 and pushes up upper and near the trailing edge 124 of sliding part body 121 laser diode 122.Laser diode 122 provide electromagnetic energy with close near HAMR read/write head 126 some heat medium surface, read/write head 126 is positioned at the surface 128 towards medium.Surface 128 towards medium is maintained near the (not shown) of move media surface at equipment duration of work.
The such as Light Coupled Device of waveguide 130 and so on is formed in sliding part body 121 so that light is passed to medium from laser 122.Such as, waveguide 130 and near field transducer (NFT) 132 can be positioned near read/write head 126 to provide the localized heating of medium during write operation.In this embodiment, laser diode 122 can be edge-emission equipment, and light is reflected into waveguide 130 by mirror or similar devices.
In fig. 1 c, stereogram show according to exemplary embodiment sliding part on another example of laser apparatus 140.Sliding part 140 comprises the sliding part body 141 of the surface 148 and top surface 149 had towards medium.Surface 148 towards medium is maintained near the (not shown) of move media surface in equipment operating process.Read/write head region 146 is positioned at the position towards the surface 148 of medium near the trailing edge 144 of sliding part body 141.Read/write head region 146 comprises one or more transducer and write transducer and little energy beam is directed to the optics (such as near field transducer) on dielectric surface read accordingly.Energy is provided by the laser (such as laser diode) 142 being coupled to base station 154, and base station 154 and laser 142 are all coupled to the top surface 149 of sliding part body 141.
Light is caused the optical interface (such as waveguide input coupler, not shown) of sliding part body 141 by laser diode 142, and it is coupled to waveguide 150 there, and light is guided to read/write head region 146 by this waveguide 150.Laser diode 142 is edge-emitting laser diodes (edgefiringlaserdiode) in this embodiment, and can be coupled to waveguide 150 via facet, grating, lens or other coupled structure known in the art.In general, sliding part body 141 is the integrated optical devices formed together with waveguide 150 and/or read/write head region 146.
Laser diode 142 and base station 154 also can use integrated optical device or integrated circuit fabrication process to be formed.But in this embodiment, laser diode 142 is not formed with base station 154 together with sliding part body 141, such as, use identical layer depositing operation.Laser 142 and base station 154 are individually formed and attached together to form sliding part 140 with sliding part body 141 afterwards.Base station 154 provides mechanical connection between laser diode 142 and sliding part body 141 and electrical connection.Sliding part body 141, laser diode 142 and base station 154 have electrical connection dish 156-158, and these electrical connection dishes 156-158 provides the electrical connection between HAMR sliding part 140 and trace cardan universal joint component (not shown).
Fig. 2 A, 2B illustrate the more details drawing of the aligning Te Tezheng of edge-emitting laser diodes 102.Specifically, Fig. 2 A and Fig. 2 B is the electricity of the laser diode 102 illustrated such as shown in Fig. 1 and the upward view of optical interface feature and stereogram respectively.As previously mentioned, laser 102 comprises the output facet 116 on transmitting terminal 117, and light is projected waveguide (waveguide 110 in such as Fig. 1) to be passed to HAMR medium by this output facet 116.The knot surface 202 of laser 102 comprises multiple solder plate 204, and these solder plates 204 are configured to form interface with the bump (protuberance 114 in such as Fig. 1) on sliding part equipment 100.Conductive surface (such as band) 206 is surrounded by elongate channels 208 at either side.Conductive surface 206 can be conducive to, at joint/refluxing stage, anode (or negative electrode) side of laser 102 is electrically coupled to sliding part.When being engaged to sliding part, conductive surface 206 also can serve as radiator.
Test panel 210,212 is shown in addition in Fig. 2 A and Fig. 2 B.These test panels 210,212 are also positioned on lower surface 202 at solder plate 204 and band 206 side, and the anode that can correspondingly be coupled in laser diode 102 and cathode layer.In general, test panel 210,212 is conducive to the automatic test of laser 102, and does not damage the danger of solder plate 204 and/or band 206.
The semiconductor laser testing such as laser diode 102 may need the electrical connection of anode from test circuit to laser and cathode terminal.In typical semiconductor laser design, knot side is metallized to provide a terminal (such as anode tap), and the substrate side of laser is metallized to provide another terminal (such as cathode terminal).These knots configure in such a manner: form the electric coupling with sliding part when mounted.In illustrative example, negative electrode and anode knot are configured to solder plate 204 and center strip 206 respectively.
In order to test this configuration, test probe can be made to contact that laser 102 is electrically coupled to test circuit with knot 204,206.But for some semiconductor laser design, it may be undesirable for using coupling feature 204,206 to carry out test.Such as, can the design (the associated interface feature together with sliding part) of the knot 204,206 shown in design drawing 2A-2B and Fig. 3 to make laser 102 physically in alignment with sliding part in reflux operation process, such as, in response to the surface tension that the reflux solder by laser 102 being engaged to sliding part applies.Thus, solder plate 204 and band 206 can realize electric coupling and the physical coupling of laser 102, and correct in depending on solder plate 204 further and band 206 can not damage (such as playing indenture, scraping) because of the test of laser 102 and/or disposal in this coupling process.
In illustrated semiconductor laser design and equivalent arrangements thereof, any contact of be of coupled connections with sliding part (such as solder plate 204 and band 206) may be damaged laser 102 and/or cause misalignment problem in laser-sliding part assembling process.Do not use these knots 204,206 to test, test probe is by engaged test dish 210,212 electrical testing laser 102.This is conducive to electrical testing and does not need to be contacted with the direct physical of solder plate with laser band 206 by test probe.Test panel 210,212 can only expect for test period be used as probe location, and do not need such as via solder physical engagement to sliding part 100.
As shown in the figure, test panel 210,212 204,206 to be disposed on the knot surface 202 of semiconductor laser together with being of coupled connections.Surface 202 on be of coupled connections 204,206 this common location laser 102 can be made to be easier to manufacture.The position of test panel 210,212 on surface 202 also can make test panel 210,212 inaccessible after laser array is filled to sliding part, such as lower surface 202 after laser is placed towards corresponding surface 113.But, suppose that solder reflow laser 102 being engaged to sliding part 100 is successful, sliding part 100 may have other contact point helping testing laser device 102, no longer need the access to test panel 210,212 thus.
Referring now to Fig. 3 A, the cross-sectional view of the semiconductor laser 102 corresponding with the cross section 3A-3A shown in Fig. 2 A illustrates the additional detail according to exemplary embodiment.As shown in the figure, the top that layer/multiple knot layers 302 cover substrate 304 is tied.Knot layer 302 forms the quantum well of laser 102.Top and bottom cathode metal level 306,308 and substrate 304 electrical contact.Top cathode layer 306 can be used for forming solder plate 204, and through conductive substrates 304 and/or can be electrically coupled to bottom cathode layer 308 by available path 307.Cathode metal layer 306 keeps isolating with knot layer 302 by insulating barrier 310.Separator 314 covered cathode layer 306, and path (such as path 315) can be comprised, form solder plate (solder plate 204 such as shown in Fig. 2 A-2B) by this path.Side leftward, test panel 212 is coupled to cathode layer by path 317.
At the right-hand side of Fig. 3 A, separator 314 is illustrated as and is connected band 313 and covers, and anode metal layer 312 is coupled with one of aforementioned test panel 210 by this pads 313.Anode metal layer 312 extends along the central authorities of laser 102, and with semiconductor layer/quantum well 302 electrical contact.Anode layer 312 can be a part for the band 206 shown in Fig. 2 A-2B.Corresponding test panel (not shown) can be had at the left-hand side of Fig. 3 A, this test panel is such as by making layer 306 be formed through separator 314 exposes, and/or formed by the extra play on separator 314 top, this extra play such as uses vias couple to layer 306.
Top anode 312 and 306 layers, negative electrode are arranged near the top surface of Fig. 3 A all roughly, and this top surface generally may correspond in the surface 202 shown in Fig. 2 A and Fig. 2 B.Because these layers 306,312 are close to top surface, therefore test panel 210,212 can be formed on same surperficial 202 or near.Such as, path (such as, being similar to path 315) or similar through layer 314 can be used test panel to be coupled to the layer 306 on figure left-hand side.Test panel can be formed to make their Phase Proportion other joint/alignment characteristics as solder plate or band 206 coplanar or recessed.Arrange that test panel can not interference laser be aimed at after can guaranteeing test panel with this relative altitude.
Such as, referring again to Fig. 2 B, band 206 can the plane of apparent surface 202 be given prominence to than solder plate 204 higher.These differences in height can be considered in an assembling process, such as by sliding part 100, form characteristic of correspondence and/or by bump/feature of forming appropriate size on sliding part 100 so that difference in height is taken into account.In this case, test panel 210,212 can be arranged to basic and solder plate 204 is coplanar.In converse configuration (such as solder plate 204 is more protruding higher than band 206 relative to surface plane), test panel 210,212 can substantially and band 206 arrange coplanarly.Solder plate 204 and band 206 substantially coplanar when, test panel 210,212 also can with solder plate 204 and band 206 coplanar, or the plane of apparent surface 202 is in than solder plate 204 or the lower height of band 206.
To understand, before to be described as " surface " by 202 and not necessarily to require that surface 202 is smooth.Although surface 202 can have the common plane for settling some (or even most) feature, but some feature can be not coplanar and be still considered to the part on surface 202 with further feature.In general, surface 202 is at least intended to the three-dimensional machinery interface representing laser 102, for being coupled to sliding part 100 or other light/electric assembly.Such as, the techniques such as such as etching, chemical-mechanical polishing/complanation can be used, to change the height of the relative further feature of some feature on surface 202.Therefore, the description of the element be disposed on surface 202 is not intended to require that this element is coplanar with same other element be arranged on surface 202.
In figure 3b, cutaway view illustrates the alternative arrangements of the test disc layer of laser diode 102A.In this embodiment, test panel 210,212 can the further feature of apparent surface 202 recessed.Get the cross section of Fig. 3 B, test panel 210,212 is positioned at wherein.In the position except position shown in Fig. 3 B, anode and cathode layer 312,306 can be similar to the anode shown in Fig. 3 A and cathode layer (although not having pads 313 and test panel 210 in these positions) in this configuration substantially.In this position, separator 314 leftward side by brachymemma/shorten the part exposing cathode layer 306, and can form test panel 212 thus.In right-hand side (bottom at raceway groove), both cathode layer 306 and separator 314 are by brachymemma/shortening.Pads 313 and test panel 210 cover the top of corresponding separator 314 and insulating barrier 310.So, test panel 210,212 is lower than any one in cathode layer 306 or separator 314 relative to surface 202, and described cathode layer 306 or separator 314 can correspond respectively to band 206 as shown in Figure 2 and coil the apparent height of 204.
As shown in Figure 3 B, cathode layer 306 couples directly to substrate 304 at trench area 306A, and does not use path (being such as similar to the path 307 in Fig. 3 A).Top cathode layer 306 and anode layer 312 allow to make anode from knot surface 202 and are connected with cathodic electricity.In this case, the end cathode layer of all layers 308 as shown in Figure 3A can not be needed.In some cases, if to require same laser diode not only laser configurations for the sliding part inner laser device configuration shown in Figure 1A but also on the sliding part shown in Figure 1B or Fig. 1 C.The cathodic electricity that top is used for substrate 304 to be coupled to the one or both in bottom cathode layer 306,308 and by them device can be comprised be connected.
Referring now to Fig. 4, flow chart illustrates the process 402 of the assembling integrated optical device sliding part according to exemplary embodiment.Process 402 relates to the knot surface of formation 404 laser diode.Knot surface comprises: a) negative electrode and anode electricity knot; And b) be electrically coupled at least one test panel of the one in cathodic electricity knot and anode electricity knot.406 laser diodes are tested via the test probe being applied at least one test panel.In test 406 process, test probe is Contact cathod and anode electricity knot not.
Test 406 can relate to any electricity known in the art or optical tests.Such as, testing laser diode can relate to by drive current testing laser power output, output beam is dispersed, Laser emission is composed, for the laser diode both sides of given drive current voltage and filter out in the aging characteristics of early stage life failure before assembling one or more.Can on assembly (such as wafer, crystal bar), perform test in batches and/or test can be performed on each laser diode.If determine that 407 tests are unsuccessful, then laser can be processed 409 (if a part for such as serious testing, be labeled as fault, it can not be used further in an assembling process thus).
If test successfully, then method relates at negative electrode further, refluxes 408 solders so that laser diode is engaged to integrated optical device sliding part between anode electricity knot and the corresponding knot of integrated optical device sliding part.This can occur in after laser diode arrangement is in sliding part, and be such as arranged in the cavity of sliding part by laser, described cavity is beneficial to aligning between the two.This layout can make test panel (it can be positioned on the lower surface of sliding part) be disposed between knot surface and the respective surfaces of integrated optics slide.In backflow 408 process, test panel is not engaged to integrated optics slide by solder.Thus, if test panel is such as damaged due to test, impaired test panel does not affect aiming at of laser diode and integrated optics slide.
Refer again to Fig. 3 B, laser diode 102A comprises the trench area 306A of top cathode layer 306, and substrate 304 is coupled to knot surface 202 by this trench area 306A.Trench area 306A eliminates the needs being used in the wire bonding (such as gold thread) marching to knot surface 202 outside diode from substrate 304.If wire bonding is used in laser assembly, wire bonding may increase manufacturing cost, and may need on the surface 202 of coupling line thereon or stretch out the extra dish on this surface 202.Owing to requiring laser diode 102A size little, so there is no sufficient space to be included in extra dish that is on matching surface or that stretch out from laser.In addition, due to the high inductance of line used in bonding, wire bonding also may affect laser performance.
Aforementioned top cathode layer 306 can save the demand of wire bonding laser diode 102 being electrically coupled to sliding part or other device.Top cathode layer 306 allows lower inductance trace to be fabricated on knot surface 202, and allows less knot surface 202.Be on same surperficial 202 of laser 102 because anode is connected with negative electrode, top cathode layer 306 is also beneficial to, via relatively inexpensive flip-chip bond, laser 102 is attached to sliding part (or other device).Selectively comprise bottom cathode layer (the bottom cathode layer 308 in such as Fig. 3 A) to provide alternative tie point, such as laser configurations, heat radiation etc. on sliding part.
Referring now to Fig. 5 and Fig. 6, cross-sectional view illustrates the configuration in the cathode groove district according to each embodiment.Diagram in Fig. 5 and Fig. 6 totally correspond to cathode layer trench area near cross section, such as by Fig. 3 B cutting line 5-5 indicate such.In fig. 5 and fig., arrow 502,602 defines laser outbound course, the direction that such as light penetrates from laser.In Figure 5, laser diode 500 comprises substantially from the elongate trench district 504 that emitting edge 506 to opposite edges 508 extend.For this example, " substantially " can be included in the continuous path part extending to any position between emitting edge 506 and opposite edges 508 from half to whole distance.Trench area 504 is disposed in trench bottom (such as, the raceway groove 208 in Fig. 2), and this raceway groove is around laser stripes zone 510, and described laser stripes zone 510 is similar to the laser stripes zone 206 of the laser 102 shown in Fig. 2.
Laser diode 600 in Fig. 6 is illustrated that alternative path configures.This laser diode 600 comprises multiple wider trench area 604, these wider trench area 604 between emitting edge 606 and opposite edges 608 along length arrangement.Trench area 604 is disposed in the either side of laser stripes zone 610.Trench area 604 has substantially identical size and dimension, although the size of each trench area 604 or shape can change.
Referring now to Fig. 7, the cross-sectional view of semiconductor laser diode 702 illustrates the alternative trench area configuration according to additional exemplary embodiment.In the figure, laser diode 702 has two alternative arrangements of raceway groove 726a, the 726b of the surface area being increased in 711a, 711b place, trench area.Cathodic electricity knot 704a, 704b and anode electricity knot 706 are disposed on the knot surface 708 of laser diode 702.Cathodic electricity knot 704a, 704b can be configured to multiple conductive plate (such as circular or long and narrow bump), and these conductive plates are coupled to top cathode metal level 710a, 710b.Top cathode metal level 710a, 710b are electrically coupled to substrate 716 by trench area 711a, 711b.
Knot layer 718 covers on the top of substrate 716.Knot layer 718 forms the quantum well of laser diode 702.Anode electricity knot 706 is coupled to the top of knot layer 718 by anode metal layer 720.Although for simplicity these and other layer (such as cathode metal layer) is described as " metal " layer, but those skilled in that art will understand, can use nonmetallic materials come cambial all or part of, still provide electric coupling as described to make layer.
As previously shown (such as in Fig. 2 B), anode electricity ties the 706 long and narrow bands that can be formed to advance along the length (such as along laser outbound course) of laser diode 702.In other configuration, anode electricity knot 706 can be similar to cathodic electricity knot 704 and comprise two or more dishes.These dishes can be coupled to anode metal layer 720 along the length of laser diode 702.Anode electricity knot 706 is arranged along anode region 730, and Laser emission band is totally defined in this anode region 730.Cathodic region 732a, 732b are under cathode metal layer 710a, 710b.In general, district 730,732a, 732b are divided, wherein raceway groove 726a, 726b and wear knot layer 718.
Cathode metal layer 710a, 710b keep isolating with knot layer 718 by one or more insulating barrier 722.Separator 724 covered cathode metal level 710a, 710b, except cathode disc 704a, 704b protrude with the position of Contact cathod metal level 710a, 710b.Separator 724 extends to anode electricity knot 706 and also can the some parts of electric isolution anode metal layer 720.Cathode metal layer 710 is extending to raceway groove 726a, 726b of substrate 716 bottom by knot layer 718 is combined with trench area 711a, 711b.Raceway groove 726a, 726b are disposed on the either side of anode electricity knot 706 (being such as similar to the raceway groove 208 in Fig. 2 B) along Laser output direction.
Raceway groove 726a, 726b comprise exemplary geometric feature, and this geometric properties is beneficial to and expands trench portions 711a, 711b to improve the performance of laser diode 702.Raceway groove 726a can have at channel top the width that preceding example (for example, see Fig. 3 B) is substantially identical with it, but has steeper side wall angle.Due to steep angle, what more have challenge may be the sidewall metallization making raceway groove 726a.But steep angle expands trench portions 711a, be that two row's cathode disc 704a leave enough spaces on knot surface 708 simultaneously.
Raceway groove 726b comprises preceding example (such as seeing Fig. 3 B) identical side wall angle have wider channel width with it.This is conducive to more easily manufacturing of cathode layer 710b, but may reserve less space for cathode disc 704b.In this embodiment, cathode disc compare dish 704a extended with compensates and guarantee coil 707a there is such as enough low resistance, the thermal transport property etc. of requirement.To understand, particular laser diode can comprise symmetrically or asymmetricly be arranged in any one in two channel arrangements 726a, 726b around anode region 730.In other is arranged, laser diode only can comprise raceway groove 726a, a 726b, and it forms single cathodic region 732a, 732b of being arranged side by side with anode region 730.
Laser diode 702 also can comprise the bottom cathode layer (not shown) be disposed on substrate 716 surface relative with knot surface 708.Such as, see the bottom cathode layer 308 in Fig. 3 A.Bottom cathode layer provides the alternative electric coupling with substrate 716.This may be conducive to the Install and configure substituted, laser on such as, sliding part inner laser device shown in Figure 1A and the sliding part shown in Figure 1B and Fig. 1 C.
Referring now to Fig. 8, flow chart illustrates according to the method for exemplary embodiment for the formation of laser diode, such as, shown in Fig. 3 B and/or Fig. 8.The method relates to formation 800 laser-substrate.Knot layer is deposited 802 on substrate.Knot layer forms the quantum well of laser diode, such as downward from the center of laser diode along laser outbound course.One or more raceway groove is formed 806 in knot layer along laser outbound course.The bottom of one or more raceway groove extends through knot layer until substrate.
The method also relates to deposit 806 insulating barriers on knot layer, and removes a part for the insulating barrier in 808 one or more trench area in the bottom of one or more raceway groove.Cathode metal layer is formed 810 on insulating barrier.Cathode metal layer extends to cathodic region from one or more trench area (cathode metal layer is coupled to substrate there) with deviating from quantum well.Anode metal layer be formed 812 on insulating barrier and be electrically coupled to knot layer anode part, if such as use two or more raceway grooves, between two raceway grooves.Separator is formed 814 on cathode metal layer.Separator comprises the some parts of wherein cathode metal layer by the region of exposing.Form 816 one or more cathodic electricity knots with the exposed portion making these knots be coupled to cathode metal layer.Form 818 one or more anode electricity knots, be coupled to anode metal layer to make these knots.
To understand, the method shown in Fig. 8 only in order to illustrate, and can have many changes by the inspiration of above-mentioned teaching.Such as, order executable operations that can be different from diagram.In addition, according to the final configuration of laser diode, certain operations can be selected.Such as, separator can be selected, or has different configuration.In another variants, more or less raceway groove and/or path can be used.
In order to solution mediate a settlement describe object give before description to exemplary embodiment.It is not intended to exhaustive or limits the invention to disclosed precise forms.According to above-mentioned teaching, many modifications and variations are possible.Any feature or all features of disclosed embodiment can apply separately or in any combination, are not intended to be construed as limiting, but pure illustrative.Be intended to the scope of the present disclosure is not limited by this detailed description, but determined by appended claims.

Claims (20)

1. a laser diode, comprising:
Substrate;
Arrange knot layer over the substrate, described knot layer forms the quantum well of laser diode;
Knot surface, described knot is surperficial to be had and extends through described knot layer until at least one raceway groove of described substrate, described at least one channel definition anode region and cathodic region;
Cathodic electricity is tied, and it is disposed in the described knot in described cathodic region on the surface; Anode electricity knot, it is disposed in described knot on the surface and be coupled to the described knot layer of described anode region; And
Cathode metal layer, it is disposed at least trench area of at least one raceway groove described, and described trench area extends along the Laser output direction of described laser diode, and described Substrate coupling is tied to described cathodic electricity by described cathode metal layer.
2. laser diode as claimed in claim 1, it is characterized in that, described trench area extends to the opposite edges of described laser diode substantially from the emission edge of described laser diode.
3. laser diode as claimed in claim 1, it is characterized in that, described trench area comprises the first and second trench area on corresponding first and second half portion being disposed in described substrate, and wherein said trench area covers the over half of the surface area of corresponding first and second half portion.
4. laser diode as claimed in claim 1, it is characterized in that, at least one raceway groove described extends along the Laser output direction of described laser diode.
5. laser diode as claimed in claim 1, it is characterized in that, at least one raceway groove described comprises two raceway grooves, and wherein said anode region is disposed between described two raceway grooves.
6. laser diode as claimed in claim 5, it is characterized in that, described cathodic region is included in two cathodic regions on the either side of described anode region.
7. laser diode as claimed in claim 6, it is characterized in that, described cathodic electricity ties more than first and second bump be included on described two cathodic regions.
8. laser diode as claimed in claim 1, is characterized in that, described cathodic electricity knot comprises multiple bump.
9. laser diode as claimed in claim 1, also comprise and be disposed in described substrate and the described bottom cathode layer tied on relative surface, surface, described bottom cathode layer provides the electric coupling substituted with described substrate.
10. laser diode as claimed in claim 1, also comprise the insulating barrier be disposed between described knot layer and described cathode metal layer, described insulating barrier makes described cathode metal layer and described knot layer insulate.
11. laser diodes as claimed in claim 1, is characterized in that, described cathodic electricity knot and described anode electricity knot are configured to the mounting surface being electrically coupled to magnetic hard drives sliding part.
12. 1 kinds of laser diodes, comprising:
Knot surface, it comprises:
Along two long and narrow raceway grooves that the Laser output direction of described laser diode extends;
Be disposed in the anode electricity knot in the anode region between described two long and narrow raceway grooves; And
Be disposed in two or more cathodic electricities knot in the one or more cathodic regions outside described anode region;
Be disposed in the knot layer below described knot surface, described knot layer forms quantum well in described anode region;
Substrate below described knot layer, wherein said long and narrow raceway groove extends through described knot layer in trench area until described substrate, and described trench area extends along the Laser output direction of described laser diode; And
Extend into the cathode metal layer of described trench area, described Substrate coupling is tied to two or more cathodic electricities described by described cathode metal layer.
13. laser diodes as claimed in claim 12, it is characterized in that, described trench area extends to the opposite edges of described laser diode substantially from the emission edge of described laser diode.
14. laser diodes as claimed in claim 12, it is characterized in that, described trench area comprises the first and second trench area on corresponding first and second half portion being disposed in described substrate, and wherein said trench area covers the over half of the surface area of corresponding first and second half portion.
15. laser diodes as claimed in claim 12, is characterized in that, described cathodic electricity knot comprises multiple bump.
16. laser diodes as claimed in claim 12, also comprise the insulating barrier be disposed between described knot layer and described cathode metal layer, and described insulating barrier makes described cathode metal layer and described knot layer insulate.
17. laser diodes as claimed in claim 12, is characterized in that, described cathodic electricity knot and described anode electricity knot are configured to the mounting surface being electrically coupled to magnetic hard drives sliding part.
18. 1 kinds of methods, comprising:
Form laser-substrate;
Be deposited upon by knot in described laser-substrate, described knot layer forms the quantum well of laser diode;
Form one or more raceway groove along Laser output direction by described knot layer, the bottom of described one or more raceway groove extends to described laser-substrate;
By insulating layer deposition on described knot layer;
Remove a part for the insulating barrier in one or more trench area in the bottom of described one or more raceway groove, described one or more trench area extends along described Laser output direction;
On described insulating barrier, form cathode metal layer, described cathode metal layer is coupled to described laser-substrate in described one or more trench area; And
Form the one or more cathodic electricity knots being coupled to described cathode metal layer, described one or more cathodic electricity knot exposes on the knot surface of described laser diode.
19. methods as claimed in claim 18, are also included on described cathode metal layer and form separator, and described separator comprises the some parts of wherein said cathode metal layer by the region of exposing, and described cathodic electricity knot is formed on described region.
20. methods as claimed in claim 18, also comprise:
The Part II removing described insulating barrier in anode region exposes to make described knot layer; And
Be in described anode region on described knot layer and form anode metal layer; And
Form the one or more anode electricity knots being coupled to described anode metal layer.
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