KR101823276B1 - 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR101823276B1
KR101823276B1 KR1020167001584A KR20167001584A KR101823276B1 KR 101823276 B1 KR101823276 B1 KR 101823276B1 KR 1020167001584 A KR1020167001584 A KR 1020167001584A KR 20167001584 A KR20167001584 A KR 20167001584A KR 101823276 B1 KR101823276 B1 KR 101823276B1
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South Korea
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film
etching
pattern
mask
light
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Korean (ko)
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KR20160021875A (ko
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오사무 노자와
료 오꾸보
히로아끼 시시도
야스시 오꾸보
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020167001584A 2013-09-24 2014-09-05 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Active KR101823276B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013196608 2013-09-24
JPJP-P-2013-196608 2013-09-24
PCT/JP2014/073498 WO2015045801A1 (ja) 2013-09-24 2014-09-05 マスクブランク、転写用マスクおよび転写用マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187001896A Division KR102046729B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법

Publications (2)

Publication Number Publication Date
KR20160021875A KR20160021875A (ko) 2016-02-26
KR101823276B1 true KR101823276B1 (ko) 2018-01-29

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KR1020167001584A Active KR101823276B1 (ko) 2013-09-24 2014-09-05 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR1020197033423A Active KR102067372B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR1020187001896A Active KR102046729B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법

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KR1020187001896A Active KR102046729B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법

Country Status (5)

Country Link
US (2) US10101650B2 (https=)
JP (3) JP5837257B2 (https=)
KR (3) KR101823276B1 (https=)
TW (2) TWI644168B (https=)
WO (1) WO2015045801A1 (https=)

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JP5837257B2 (ja) * 2013-09-24 2015-12-24 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR101617727B1 (ko) * 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
KR102429244B1 (ko) 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
JP6642493B2 (ja) 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
JP6808566B2 (ja) 2017-04-08 2021-01-06 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US11048160B2 (en) 2017-06-14 2021-06-29 Hoya Corporation Mask blank, phase shift mask and method for manufacturing semiconductor device
JP6821865B2 (ja) * 2018-09-27 2021-01-27 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7033638B2 (ja) * 2020-12-09 2022-03-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118915377B (zh) * 2024-10-11 2025-03-21 合肥晶合集成电路股份有限公司 掩膜版及其形成方法

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JP2007241137A (ja) 2006-03-10 2007-09-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその製造方法
JP5231956B2 (ja) 2008-11-25 2013-07-10 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法
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Publication number Publication date
JP6293841B2 (ja) 2018-03-14
US20160187769A1 (en) 2016-06-30
JP5837257B2 (ja) 2015-12-24
KR20180011348A (ko) 2018-01-31
KR20160021875A (ko) 2016-02-26
US10101650B2 (en) 2018-10-16
US20190004419A1 (en) 2019-01-03
JP2017033016A (ja) 2017-02-09
JPWO2015045801A1 (ja) 2017-03-09
TW201738653A (zh) 2017-11-01
TWI644168B (zh) 2018-12-11
US10527931B2 (en) 2020-01-07
TW201516560A (zh) 2015-05-01
TWI597563B (zh) 2017-09-01
KR102046729B1 (ko) 2019-11-19
JP6030203B2 (ja) 2016-11-24
JP2015222448A (ja) 2015-12-10
KR102067372B1 (ko) 2020-01-16
WO2015045801A1 (ja) 2015-04-02
KR20190130058A (ko) 2019-11-20

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