KR101823004B1 - Manufacturing method for semiconductor test socket - Google Patents

Abstract

The present invention provides a method for manufacturing a semiconductor test socket, which can manufacture the semiconductor test socket to correspond to semiconductor devices with various sizes by a simple manufacturing process and can make gaps between conductive portions fine. To this end, the present invention provides the method for manufacturing the semiconductor test socket including: a main body composed of insulation portions and the conductive portions; and a support plate having a coupling unit for supporting the main body. The method comprises the steps of: (a) manufacturing a silicon sheet by each predetermined thickness with an insulating silicon material to form the insulation portions; (b) forming via holes on the silicon sheet to correspond to terminals of the semiconductor device; (c) filling the insides of the via holes with a conductive mixture resulted by mixing liquefied silicon rubber with powered conductive particles to form the conductive portions; (d) hardening the conductive portions to complete the main body; (e) cutting the completed main body to be matched with a size of the coupling unit of the support plate in accordance with a size required by the semiconductor test socket; and (f) coupling the cut main body to the coupling unit of the support plate.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a semiconductor test socket,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor test socket, and more particularly, to a method of manufacturing a semiconductor test socket that electrically connects a ball lead of a semiconductor device to be tested to a test board .

In general, a semiconductor device is subjected to a fabrication process and then tested for good current conduction. Specifically, after the test socket is connected between the inspection apparatus and the semiconductor element, an electrical signal is sent from the inspection apparatus to the semiconductor element to check whether or not there is a signal response from the semiconductor element to determine whether the semiconductor element is good or not.

The test socket is also used as a burn-in socket for testing the durability of a semiconductor device in a harsh environment at a high temperature during the manufacturing process of the semiconductor device, in addition to checking whether the semiconductor device is turned on.

In addition, since the test socket is electrically connected to the inspection apparatus and performs inspection while making a number of temporary contact with a plurality of semiconductor elements, the conductive portion which is the contact terminal of the test socket has a good contact environment from the innumerable contact of the semiconductor element Durability must be maintained.

That is, it is very important that the test socket should maintain a good contact environment even in a BGA (Ball Grid Array) type IC device or an LGA (Land Grid Array) type IC device having a different contact environment.

It is also important to maintain the durability of the test socket to withstand harsh environments, even in high temperature, harsh environments.

Korean Patent Publication No. 2002-0079350 discloses a method in which an investment pin generating a magnetic force by a magnet is provided in a space between upper and lower metal molds and a material mixed with silicon and a metal powder which reacts with magnetic force is injected into a cavity of a mold, A metal powder which reacts with the magnetism of the magnetic force among the materials is gathered between the investment pins so as to form a mutually spaced conductive part through a curing process.

However, since the manufacturing method of the silicon contactor requires a magnet and an investment pin to generate magnetic force in the mold, the structure of the manufacturing apparatus becomes complicated, and the magnetic force lines formed by the investment pins are not straight lines, There is a limit in miniaturizing the interval between the conductive parts because the magnetic lines of force are formed.

Further, in order to cope with the size of the semiconductor element by forming the conductive portion by the metal mold, the metal portion must be manufactured in accordance with the pitch between the terminals of the semiconductor element to form the conductive portion. As a result, the manufacturing process time becomes longer and the manufacturing cost increases greatly.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a semiconductor test socket capable of manufacturing a semiconductor test socket corresponding to semiconductor devices of various sizes by a simple manufacturing process, And to provide a method of manufacturing a semiconductor test socket.

According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor test socket, the method comprising the steps of: (a) forming an insulating silicon material (B) forming a through hole in the silicon sheet so as to correspond to a terminal of a semiconductor device; (c) forming a through hole in the liquid silicon (D) filling the conductive part with rubber and powder-like conductive particles to form a conductive part; (d) curing the conductive part to complete the body; and (e) (F) cutting the cut body to a size corresponding to a size of a coupling portion of the support plate corresponding to a required size; It provides a method for manufacturing a semiconductor test socket comprising: a coupling to the combination of the rate portion.

After the step (a), the method further comprises the step of attaching a flexible insulating sheet of polyimide material to the upper and lower surfaces of the silicon sheet, or to either the upper surface or the lower surface.

After the step (e), the flexible insulating sheet attached to the silicon sheet is removed to form the first contact portion and the second contact portion, or any one of the first contact portion and the second contact portion in the conductive portion .

And the through hole is formed with a uniform pitch through any one of laser hole processing, punching processing and array processing.

In the step (f), the coupling of the main body to the coupling portion of the support plate is performed using a liquid silicone adhesive or an adhesive tape.

According to the method of manufacturing a semiconductor test socket according to the present invention, since the insulating portion is formed of a silicon sheet and the conductive portion is formed on the silicon sheet by laser drilling or filling, the interval between the conductive portions can be miniaturized as much as possible .

In addition, according to the present invention, since the semiconductor test socket is manufactured by cutting the insulating portion formed of the silicon sheet to fit the size of the semiconductor device, the test socket of various sizes It is possible to reduce the manufacturing process time and production cost of the semiconductor test socket as much as possible.

1 is a perspective view showing a semiconductor test socket manufactured according to a manufacturing method according to an embodiment of the present invention.
2A to 2G are perspective views schematically showing steps of a method of manufacturing a semiconductor test socket according to an embodiment of the present invention.
3A to 3E are views for explaining a method of manufacturing a semiconductor test socket according to an embodiment of the present invention.
4A to 4D are views illustrating a process of forming a first contact portion and a second contact portion in a conductive portion using a flexible insulation sheet according to an embodiment of the present invention.
5 is a cross-sectional view schematically showing a structure of a semiconductor test socket according to an embodiment of the present invention.
6 is a cross-sectional view schematically showing another example of the structure of a semiconductor test socket according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the same components are denoted by the same reference symbols as possible in the accompanying drawings. Further, the detailed description of known functions and configurations that may obscure the gist of the present invention will be omitted.

Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 6 attached hereto.

FIG. 1 is a perspective view showing a semiconductor test socket manufactured according to a manufacturing method according to an embodiment of the present invention. FIGS. 2A to 2G schematically show a method of manufacturing a semiconductor test socket according to an embodiment of the present invention. 3A to 3E are views for explaining a method of manufacturing a semiconductor test socket according to an embodiment of the present invention.

4A to 4D are views illustrating a process of forming a first contact portion and a second contact portion in a conductive portion using a flexible insulation sheet according to an embodiment of the present invention. FIG. 6 is a cross-sectional view schematically showing another example of the structure of a semiconductor test socket according to an embodiment of the present invention.

2 and 3, a method of manufacturing a semiconductor socket 10 (FIG. 5) according to an embodiment of the present invention includes the steps of: (a) forming a silicon sheet 110 with an insulating silicon material to form an insulating part; (b) forming a through hole 111 in the silicon sheet 110 so as to correspond to the terminal 21 of the semiconductor device 20; (c) forming a liquid silicone rubber (D) filling the conductive part 120 with the conductive mixture to form the conductive part 120; and (e) curing the conductive part 120 to complete the step Cutting the insulating part formed by the silicon sheet 110 to fit the size of the coupling part 210 of the support plate 200 and f) Lt; / RTI >

In this case, after step (a), a step of attaching a polyimide flexible insulating sheet 130 to the upper surface and / or the lower surface of the silicon sheet 110 may be further included.

After step (e), a step of removing the flexible insulating sheet 130 attached to the silicon sheet 110 to form a first contact part 122 and / or a second contact part 123 on the conductive part 120 May be further included.

On the other hand, the through hole 111 can form a uniform pitch through any one of laser hole machining, punch machining and array machining.

In step (f), the main body may be coupled to the coupling part 210 of the support plate 200 using a liquid silicone adhesive or an adhesive tape.

2 to 4, a method of manufacturing the semiconductor test socket 10 according to the embodiment of the present invention will be described in detail as follows.

Here, FIG. 2A shows a silicon sheet, FIG. 2B shows a state in which a through hole is formed in a silicon sheet, and FIG. 2C shows a process of filling a through hole with a conductive mixture. FIG. 2 (d) shows a process of curing the conductive mixture, FIG. 2 (e) shows a process of cutting the insulation part having the conductive part, and FIG. 2 (f) shows a process of bonding the cut insulation part to the coupling part of the support plate. FIG. 2G shows a state in which the semiconductor test socket is completed by connecting the insulating portion to the support plate.

FIG. 3B shows a state in which a through hole is formed in the silicon sheet, and FIG. 3C shows a state in which a conductive part is filled and hardened in the through hole to form a conductive part. Fig. 3 (d) shows a state in which the silicon sheet is cut to fit the engagement portion of the support plate, Fig. 3 (e) shows the support plate provided with the coupling portion, and Fig. 3 (f) shows a state in which the semiconductor test socket is completed.

4A shows a state in which a flexible insulation sheet is attached on the upper and lower surfaces of a silicon sheet as an insulation part, and FIG. 4B shows a state in which a first contact part is formed by removing a flexible insulation sheet attached to the upper surface of the insulation part.

4C shows a state in which the second contact portion is formed by removing the flexible insulation sheet attached to the lower surface of the insulation portion. FIG. 4D shows a state in which the flexible insulation sheet attached to the upper / FIG.

First, as shown in FIGS. 2A and 3A, a silicon sheet 110 of a predetermined thickness made of an insulating silicon material, for example, an insulating silicone rubber is manufactured to form an insulating portion.

At this time, as shown in FIG. 4A, a process of attaching a polyimide flexible insulating sheet 130 to the upper surface and / or the lower surface of the silicon sheet 110 may be included. This is a process for forming the first contact portion 122 and / or the second contact portion 123 protruding from the upper and lower surfaces of the insulating portion on the conductive portion 120 by removing the flexible insulating sheet 130 in the following step .

Next, as shown in FIGS. 2B and 3B, a through hole 111 is formed in the silicon sheet 110, which is manufactured by thickness, to correspond to the terminal 21 of the semiconductor element 20. At this time, the through hole 111 forms a uniform pitch through any one of laser hole processing, punching processing and array processing.

In the embodiment of the present invention, it is shown that through-holes 111 penetrating through the insulating portion by using laser hole processing are formed.

Here, a laser hole processing machine (not shown), which is applied to form a fine line width, may be used for the laser hole processing. The laser beam machining apparatus can reduce the line width of the beam to 1 pm (pico meter) or less, so that the distance between the through hole 111 and the through hole 111 can be minimized.

Next, as shown in FIGS. 2C and 3C, a conductive mixture in which liquid silicone rubber and powder-shaped conductive particles are mixed is filled in the through hole 111 of the silicon sheet 110 to form the conductive part 120 .

At this time, conductive particles for forming the conductive parts 120 and liquid silicone rubber are mixed in advance to prepare a conductive mixture. Here, as the conductive particles, one or more kinds of powders having excellent conductivity such as nickel powder coated with Au, silver powder, gold powder, nickel powder, copper powder and the like may be mixed and used.

Further, in forming the conductive mixture, the bonding between the conductive particles and the liquid silicone rubber can be further strengthened by mixing the liquid bonding primers together to form the conductive mixture.

The method of filling the conductive mixture into the through hole 111 formed in the silicon sheet 110 as the insulating part can fill the conductive mixture into the through hole 111 of the silicon sheet 110 as the insulating part through the dispenser 300.

Next, as shown in FIG. 2D, the conductive mixture filled in the through hole 111 of the silicon sheet 110, which is an insulating part, is cured by the curing device 400 to complete the main body 100.

The process of filling the through hole 111 of the silicon sheet 110 with the conductive mixture and the process of curing the conductive mixture filled in the through hole 111 may be performed simultaneously according to the process conditions.

4A to 4D, the flexible insulation sheet 130 attached to the upper / lower surface of the insulation portion 110 of the silicon sheet 110 is removed as required, The contact portion 122 and / or the second contact portion 123 are formed.

4B, when the flexible insulation sheet 130 attached to the upper surface of the silicon sheet 110 is removed, a first contact portion 122 protruding above the insulation portion 110 is formed, The flexible insulating sheet 130 attached to the lower surface of the silicon sheet 110 is removed so as to be in contact with the terminal 21 of the insulating member 20. As shown in FIG. 2 contact portion 123 is formed and brought into contact with the conductive pad 31 of the test board 30. [

At this time, either the first contact portion 122 or the second contact portion 123 may be formed on the conductive portion 120 according to the characteristics of the semiconductor device 20 and the test board 30, It may be formed on both sides of the conductive part 120 as shown in Fig.

Next, as shown in FIG. 2E and FIG. 3D, the insulating portion formed of the silicon sheet 110 is cut to fit the size of the coupling portion 210 of the support plate 200.

At this time, the silicon sheet 110, which is an insulating part, can be cut using a laser or the like, and it is also possible to cut the silicon sheet 110 through other physical or chemical cutting methods.

That is, the silicon sheet 110, which is an insulating part, can be manufactured in various sizes through cutting, and thus it is applicable to semiconductor test sockets 10 of various sizes.

Next, as shown in Figs. 2F and 3E, the cut silicon sheet 110 is bonded to the coupling portion 210 of the support plate 200. Then, as shown in Figs.

At this time, the coupling of the main body 100 to the coupling portion 210 of the support plate 200 can be attached using a liquid silicone adhesive or an adhesive tape.

Through this manufacturing method, the manufacture of the semiconductor test socket 10 according to the embodiment of the present invention is completed, as shown in Figs. 2G and 3F.

Hereinafter, the structure of the semiconductor test socket 10 according to the embodiment of the present invention manufactured by the above-described manufacturing method will be described.

1 and 5, a semiconductor test socket according to an embodiment of the present invention includes a main body 100 including a silicon sheet 110 as an insulating part and a conductive part 120, And may include a support plate 200.

At this time, the silicon sheet 110, which is an insulation part, is supported in a state of being coupled to the coupling part 210 formed on the support plate 200 and can be aligned with the inspection circuit board (not shown).

The insulating part is formed of a silicon sheet 110 made of a silicon material to form the body of the semiconductor test socket 10 and serves to support each conductive part 120 to be described later upon receiving a contact load.

More specifically, the insulating portion formed of the silicon sheet 110 absorbs the contact force when the terminals 21 of the semiconductor element 20 or the conductive pads 31 of the test board 30 are brought into contact with each other, Thereby protecting the unit 120.

The silicone material of the silicone sheet 110 forming the insulating part may be a polyurethane rubber such as polybutadiene, natural rubber, polyisoprene, SBR, NBR and the like, and hydrogen compounds thereof such as a styrene butadiene block, copolymer, styrene isoprene block copolymer , And their hydrogen compounds, and chloroprene, urethane rubber, polyethylene rubber, epichlorohydrin rubber, ethylene-propylene copolymer, and ethylene propylene diene copolymer may be used.

The conductive part 120 is formed by fusing a plurality of conductive particles and a liquid silicone rubber as a conductive mixture, and is formed to penetrate the silicon sheet 110 as an insulating part. At this time, a plurality of through holes 111 are formed in the silicon sheet 110 so that the conductive parts 120 can be formed.

As the conductive particles, there may be used one or more mixed powders of various types having excellent conductivity such as nickel powder coated with gold (Au), silver powder, gold powder, nickel powder, copper powder and the like.

In addition, the conductive particles according to the embodiment of the present invention can improve strength and durability through rhodium (RH) plating. On the other hand, a method of plating the conductive particles with rhodium is not particularly limited, but plating can be carried out by, for example, chemical plating or electrolytic plating.

Although the conductive part 120 according to the embodiment of the present invention has five silicon sheets 110 as the insulating part, at least one or more conductive parts 120 may be formed to suit the size of the semiconductor device.

The conductive part 120 includes a conductive part body 121 having an outer appearance and a first contact part 122 provided on one side of the conductive part body 121 and in contact with the terminal 21 of the semiconductor element 20, And a second contact portion 123 provided on the other side of the conductive body 121 to be in contact with the conductive pad 31 of the test board 30. That is, the first contact portion 122 serves to contact the terminal 21, the second contact portion 123 serves to contact the conductive pad 31, and the conductive portion body 121 contacts the first contact portion 122) and the second contact portion (123).

At this time, the first contact portion 122 and the second contact portion 123 may be formed in the process of removing the flexible insulation sheet 130 attached to the silicon sheet 110.

6, only the first contact portion 122 may be formed on the conductive portion 120 according to the characteristics of the semiconductor device 20 and the test board 30. [

And a guide plate 140 having a guide hole 141 is formed on an upper end of the silicon sheet 110 as an insulating member.

The guide plate 140 has the first contact portion 122 inserted into the guide hole 141 formed in the guide plate 140 and the terminal 21 and the first contact portion 122 of the semiconductor device 20 to be tested, The conductive particles of the first contact portion 122 are prevented from being detached or collapsed outward due to the impact of the terminal 21 when they are in contact with each other.

The operation of the semiconductor test socket 10 according to the embodiment of the present invention will now be described.

First, a test board 30 provided with a semiconductor test socket 10 is prepared. At this time, the second contact portion 123 of the conductive portion 120 contacts the conductive pad 31 of the test board 30 and is electrically connected.

The terminal 21 of the semiconductor element 20 transferred to the upper portion of the semiconductor test socket 10 is elastically contacted by pressing the first contact portion 122 of the conductive portion 120 at a predetermined pressure, do.

In this state, a test signal is transmitted to the semiconductor device 20 through the semiconductor test socket 10 through the test board 30, and a test process is performed.

Although the present invention has been described by way of examples, the present invention is not limited thereto, and modifications and variations are possible within the scope of the technical idea of the present invention.

10: Semiconductor test socket 20: Semiconductor device
21: Terminal 30: Test board
31: conductive pad 100:
110: Silicon sheet 111: Through hole
120: conductive part 121: conductive part body
122: first contact portion 123: second contact portion
130: flexible insulation sheet 140: guide plate
141: Guide hole 200: Support plate
210:

Claims (5)

A method of manufacturing a semiconductor test socket including a main body (100) comprising an insulating part and a conductive part (120) and a support plate (200) provided with a coupling part (210)
(a) fabricating a silicon sheet 110 with a predetermined thickness from an insulating silicon material to form the insulating portion;
(b) forming a through hole (111) in the silicon sheet (110) so as to correspond to a terminal of a semiconductor device;
(c) forming a conductive part 120 by filling a conductive mixture in which the liquid silicone rubber and powder-shaped conductive particles are mixed in the through-hole 111;
(d) curing the conductive part (120) to complete the body (100);
(e) cutting the finished body (100) to fit the size of the coupling portion (210) of the support plate (200) corresponding to the size required by the semiconductor test socket; And
(f) bonding the cut body (100) to the coupling part (210) of the support plate (200). The method according to claim 1,
After the step (a)
Further comprising the step of attaching a flexible insulating sheet (130) made of polyimide to the upper surface and the lower surface of the silicon sheet (110), or to either the upper surface or the lower surface of the silicon sheet (110). 3. The method of claim 2,
After the step (e)
The flexible insulating sheet 130 attached to the silicon sheet 110 is removed and the first contact portion 122 and the second contact portion 123 or the first contact portion 122 or the second contact portion 122, And forming a contact portion (123) on the semiconductor chip. 4. The method according to any one of claims 1 to 3,
Wherein the through hole (111) forms a uniform pitch through any one of laser hole processing, punching processing and array processing. 5. The method of claim 4,
In the step (f)
Wherein the coupling of the main body (100) to the coupling portion (210) of the support plate (200) is performed using a liquid silicone adhesive or an adhesive tape.

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