KR101822801B1 - 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법 - Google Patents

마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법 Download PDF

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KR101822801B1
KR101822801B1 KR1020177001569A KR20177001569A KR101822801B1 KR 101822801 B1 KR101822801 B1 KR 101822801B1 KR 1020177001569 A KR1020177001569 A KR 1020177001569A KR 20177001569 A KR20177001569 A KR 20177001569A KR 101822801 B1 KR101822801 B1 KR 101822801B1
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light
film
mask
etching
shielding film
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KR20170010900A (ko
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오사무 노자와
히로유끼 이와시따
마사히로 하시모또
아쯔시 고미나또
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020177001569A 2009-06-18 2010-06-17 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법 Active KR101822801B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-145700 2009-06-18
JP2009145700 2009-06-18
PCT/JP2010/060269 WO2010147172A1 (ja) 2009-06-18 2010-06-17 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法

Related Parent Applications (1)

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KR1020127001315A Division KR101699995B1 (ko) 2009-06-18 2010-06-17 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법

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KR20170010900A KR20170010900A (ko) 2017-02-01
KR101822801B1 true KR101822801B1 (ko) 2018-01-29

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KR1020177001569A Active KR101822801B1 (ko) 2009-06-18 2010-06-17 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
KR1020127001315A Active KR101699995B1 (ko) 2009-06-18 2010-06-17 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법

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Country Status (5)

Country Link
US (1) US9017902B2 (cg-RX-API-DMAC7.html)
JP (3) JP4847629B2 (cg-RX-API-DMAC7.html)
KR (2) KR101822801B1 (cg-RX-API-DMAC7.html)
TW (2) TW201527869A (cg-RX-API-DMAC7.html)
WO (1) WO2010147172A1 (cg-RX-API-DMAC7.html)

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KR101822801B1 (ko) * 2009-06-18 2018-01-29 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
JP5772185B2 (ja) * 2011-04-25 2015-09-02 富士通セミコンダクター株式会社 パターン欠陥修正方法及びパターン欠陥修正装置
KR101854796B1 (ko) * 2011-09-15 2018-05-09 삼성디스플레이 주식회사 마스크 제조 방법
JP5541266B2 (ja) 2011-11-18 2014-07-09 信越化学工業株式会社 パターン形成膜のエッチング条件の評価方法
JP5541265B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 エッチングマスク膜の評価方法
DE102013203995B4 (de) * 2013-03-08 2020-03-12 Carl Zeiss Smt Gmbh Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
JP6428400B2 (ja) 2015-03-13 2018-11-28 信越化学工業株式会社 マスクブランクス及びその製造方法
US10079150B2 (en) * 2015-07-23 2018-09-18 Spts Technologies Limited Method and apparatus for dry gas phase chemically etching a structure
TWI684822B (zh) * 2015-09-30 2020-02-11 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
KR102281354B1 (ko) * 2016-08-26 2021-07-26 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 반도체 디바이스의 제조 방법
CN110892324B (zh) * 2017-07-21 2024-04-02 卡尔蔡司Smt有限责任公司 用于处理光刻掩模的多余材料的方法与设备
CN111512226B (zh) * 2017-12-26 2023-09-26 Hoya株式会社 掩模坯料、相移掩模及半导体器件的制造方法
JP2019020749A (ja) * 2018-10-26 2019-02-07 信越化学工業株式会社 マスクブランクス及びその製造方法
DE102020208568A1 (de) * 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
KR102444967B1 (ko) 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP7892481B2 (ja) * 2021-09-30 2026-07-21 Hoya株式会社 フォトマスクブランク、フォトマスク、フォトマスクの製造方法、および表示装置の製造方法
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (3)

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JP2004273933A (ja) 2003-03-11 2004-09-30 Seiko Instruments Inc 金属および金属酸化物の微細加工方法
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP2007241060A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法

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JP2000010260A (ja) 1998-06-19 2000-01-14 Seiko Instruments Inc マスク修正装置の黒欠陥修正方法
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
JP4737426B2 (ja) 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5018787B2 (ja) * 2006-12-27 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5115953B2 (ja) * 2007-03-30 2013-01-09 Ｈｏｙａ株式会社 フォトマスクブランク及びフォトマスク
KR100850519B1 (ko) * 2007-06-28 2008-08-05 주식회사 에스앤에스텍 그레이톤 블랭크 마스크 및 포토마스크의 제조방법
JP5242110B2 (ja) 2007-09-30 2013-07-24 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体装置の製造方法
WO2009054232A1 (ja) * 2007-10-22 2009-04-30 Nanomaterial Laboratory Co., Ltd. 半導体製造装置、半導体製造方法及び電子機器
JP5530075B2 (ja) * 2008-03-31 2014-06-25 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びこれらの製造方法
TWI409580B (zh) 2008-06-27 2013-09-21 S&S Tech Co Ltd 空白光罩、光罩及其製造方法
JP2010109164A (ja) * 2008-10-30 2010-05-13 Toshiba Corp Ｅｕｖマスクの欠陥修正方法
KR101822801B1 (ko) * 2009-06-18 2018-01-29 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP2004273933A (ja) 2003-03-11 2004-09-30 Seiko Instruments Inc 金属および金属酸化物の微細加工方法
JP2007241060A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法

Also Published As

Publication number Publication date
TW201527869A (zh) 2015-07-16
WO2010147172A1 (ja) 2010-12-23
JPWO2010147172A1 (ja) 2012-12-06
TW201109834A (en) 2011-03-16
JP2012008607A (ja) 2012-01-12
JP2014098929A (ja) 2014-05-29
KR20170010900A (ko) 2017-02-01
JP4847629B2 (ja) 2011-12-28
KR20120044342A (ko) 2012-05-07
TWI563338B (cg-RX-API-DMAC7.html) 2016-12-21
TWI484286B (zh) 2015-05-11
US9017902B2 (en) 2015-04-28
JP5704773B2 (ja) 2015-04-22
JP5483122B2 (ja) 2014-05-07
KR101699995B1 (ko) 2017-01-26
US20120100470A1 (en) 2012-04-26

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