KR101813905B1 - 반도체 패키지의 쓰루홀 구조의 향상된 배열 - Google Patents

반도체 패키지의 쓰루홀 구조의 향상된 배열 Download PDF

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KR101813905B1
KR101813905B1 KR1020167004969A KR20167004969A KR101813905B1 KR 101813905 B1 KR101813905 B1 KR 101813905B1 KR 1020167004969 A KR1020167004969 A KR 1020167004969A KR 20167004969 A KR20167004969 A KR 20167004969A KR 101813905 B1 KR101813905 B1 KR 101813905B1
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South Korea
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edge
rectangular
holes
hole
edges
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KR1020167004969A
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English (en)
Korean (ko)
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KR20160039246A (ko
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웽 홍 테
사라 케이 하니
치 황 림
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인텔 코포레이션
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Publication of KR20160039246A publication Critical patent/KR20160039246A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0757—Topology for facilitating the monolithic integration
    • B81C2203/0771—Stacking the electronic processing unit and the micromechanical structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
KR1020167004969A 2013-09-27 2013-09-27 반도체 패키지의 쓰루홀 구조의 향상된 배열 KR101813905B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2013/062457 WO2015047346A1 (en) 2013-09-27 2013-09-27 An improved arrangement of through-hole structures of a semiconductor package

Publications (2)

Publication Number Publication Date
KR20160039246A KR20160039246A (ko) 2016-04-08
KR101813905B1 true KR101813905B1 (ko) 2018-01-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004969A KR101813905B1 (ko) 2013-09-27 2013-09-27 반도체 패키지의 쓰루홀 구조의 향상된 배열

Country Status (6)

Country Link
US (1) US20150217995A1 (ja)
EP (1) EP3050116B1 (ja)
JP (1) JP6205496B2 (ja)
KR (1) KR101813905B1 (ja)
CN (1) CN104512858A (ja)
WO (1) WO2015047346A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104865002B (zh) * 2015-05-05 2017-04-12 苏州曼普拉斯传感科技有限公司 一种mems压力传感器装置及封装方法
US9997428B2 (en) 2015-07-14 2018-06-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Via structures for thermal dissipation
US10129972B2 (en) 2015-10-30 2018-11-13 Avago Technologies International Sales Pte. Limited Frame elements for package structures comprising printed circuit boards (PCBs)
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
US20190169020A1 (en) * 2017-12-05 2019-06-06 Intel Corporation Package substrate integrated devices

Citations (6)

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JP2005514728A (ja) * 2001-11-07 2005-05-19 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｃｍｏｓ適合性基板上にマイクロ電気機械スイッチを作製する方法
JP2005300403A (ja) * 2004-04-14 2005-10-27 Denso Corp 半導体力学量センサ
JP2007015035A (ja) 2005-07-05 2007-01-25 Advanced Telecommunication Research Institute International 微小構造体の製造方法
US20100020991A1 (en) * 2008-07-25 2010-01-28 United Microelectronics Corp. Diaphragm of mems electroacoustic transducer
JP2010155306A (ja) * 2008-12-26 2010-07-15 Panasonic Corp Ｍｅｍｓデバイス及びその製造方法
US20130056840A1 (en) * 2011-09-02 2013-03-07 Nxp B.V. Acoustic transducers with perforated membranes

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US7541214B2 (en) * 1999-12-15 2009-06-02 Chang-Feng Wan Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
KR100416266B1 (ko) * 2001-12-18 2004-01-24 삼성전자주식회사 막힌 희생층 지지대를 갖는 멤스 구조물 및 그의 제작방법
US20070241655A1 (en) * 2004-03-30 2007-10-18 Kazuto Sakemura Electron Emitting Device and Manufacturing Method Thereof and Image Pick Up Device or Display Device Using Electron Emitting Device
US7178400B2 (en) * 2004-04-14 2007-02-20 Denso Corporation Physical quantity sensor having multiple through holes
JP4215076B2 (ja) * 2006-07-10 2009-01-28 ヤマハ株式会社 コンデンサマイクロホン及びその製造方法
EP1908727A1 (en) * 2006-10-03 2008-04-09 Seiko Epson Corporation Wafer-level MEMS package and manufacturing method thereof
JP4726927B2 (ja) * 2008-06-19 2011-07-20 株式会社日立製作所 集積化マイクロエレクトロメカニカルシステムおよびその製造方法
US8709264B2 (en) * 2010-06-25 2014-04-29 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
JP5813471B2 (ja) * 2011-11-11 2015-11-17 株式会社東芝 Ｍｅｍｓ素子
US9708178B2 (en) * 2011-12-30 2017-07-18 Intel Corporation Integration of laminate MEMS in BBUL coreless package
EP2658288B1 (en) * 2012-04-27 2014-06-11 Nxp B.V. Acoustic transducers with perforated membranes
JP2014155980A (ja) * 2013-02-15 2014-08-28 Toshiba Corp 電気部品およびその製造方法
US8692340B1 (en) * 2013-03-13 2014-04-08 Invensense, Inc. MEMS acoustic sensor with integrated back cavity

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2005514728A (ja) * 2001-11-07 2005-05-19 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｃｍｏｓ適合性基板上にマイクロ電気機械スイッチを作製する方法
JP2005300403A (ja) * 2004-04-14 2005-10-27 Denso Corp 半導体力学量センサ
JP2007015035A (ja) 2005-07-05 2007-01-25 Advanced Telecommunication Research Institute International 微小構造体の製造方法
US20100020991A1 (en) * 2008-07-25 2010-01-28 United Microelectronics Corp. Diaphragm of mems electroacoustic transducer
JP2010155306A (ja) * 2008-12-26 2010-07-15 Panasonic Corp Ｍｅｍｓデバイス及びその製造方法
US20130056840A1 (en) * 2011-09-02 2013-03-07 Nxp B.V. Acoustic transducers with perforated membranes

Also Published As

Publication number Publication date
EP3050116A4 (en) 2017-05-03
EP3050116A1 (en) 2016-08-03
US20150217995A1 (en) 2015-08-06
KR20160039246A (ko) 2016-04-08
JP2016531011A (ja) 2016-10-06
CN104512858A (zh) 2015-04-15
EP3050116B1 (en) 2019-02-27
WO2015047346A1 (en) 2015-04-02
JP6205496B2 (ja) 2017-09-27

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